Polarization sensing with resonant cavity enhanced photodetectors

We describe a new method of sensing the linear polarization of light using resonant cavity enhanced (RCE) photodetectors. The RCE detectors are constructed by integrating a thin absorption region into an asymmetric Fabry-Perot cavity. The top reflector is formed by the semiconductor air interface while the bottom mirror is a distributed Bragg reflector (DBR). Quantum efficiency of these RCE devices can be controlled by tuning the cavity length by recessing the top surface of the detector for off-normal incidence of light the reflectivity of the semiconductor-air interface can be significantly different for TE(s) and TM(p) polarizations. A pair of monolithically integrated RCE photodetectors with cavity lengths tuned for resonance and antiresonance provide a large contrast in response to TE and TM polarizations. An alternative polarization sensor can be formed by vertically integrating a conventional and a RCE photodetector. We show that a large contrast in the TE/TM responsivities of the vertical cavity polarization detectors (VCPD) can be achieved, thus combining detection and polarization sensing in a single mesa semiconductor device. These devices alleviate the problems associated with the bulkiness and critical alignment constraints of the conventional sensors based on polarizing filters or splitters and have potential for fabrication of monolithic smart pixels and imaging arrays     

GaAsSb: a novel material for near infrared photodetectors on GaAs substrates

We have studied the molecular beam epitaxy (MBE) growth of GaAsSb on GaAs substrates. The optical properties and composition of GaAsSb layer strongly depend on the growth temperature, the Ga growth rate, and the As and Sb fluxes and their ratios. We also report on two GaAsSb-GaAs photodiode structures operating at 1.3 /spl mu/m. The peak quantum efficiency was 54% for the GaAsSb resonant-cavity-enhanced (RCE) p-i-n photodiode and 36% for the RCE GaAsSb avalanche photodiode (APD) with separate absorption, charge, and multiplication regions (SACM). At 90% of the breakdown, the dark current of the SACM APD was 5 nA. The GaAsSb SACM APD also exhibited very low multiplication noise and k/sub eff/ was approximately 0.1, which is the lowest ever reported for APDs operating at 1.3 /spl mu/m.     

Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si

In this paper, we present observations of quantum confinement and quantum-confined Stark effect electroabsorption in Ge quantum wells with SiGe barriers grown on Si substrates. Though Ge is an indirect gap semiconductor, the resulting effects are at least as clear and strong as seen in typical III–V quantum well structures at similar wavelengths. We also designed and fabricated a coplanar high-speed modulator, and demonstrated modulation at 10 GHz and a 3.125-GHz eye diagram for 30-$mu$m-sized modulators.      

硅基射频螺旋电感的在片测试和剥离方法

使用无锡上华0.5μm（DPTM）标准CMOS工艺制备了螺旋电感芯片,利用矢量网络分析仪和探针台搭建了硅基螺旋电感测试装置,对该硅基螺旋电感进行了测试。采用两种去除电路寄生参数的剥离方法,分析了高频条件下各种测试寄生参量的影响。建立了基于0.5μm（DPTM）标准CMOS工艺在片螺旋电感的寄生参量单π等效电路模型,详细列出了在片螺旋电感测试和寄生参数的剥离步骤,测试结果在0.1~8.5 GHz范围内与三维电磁场（HFSS）仿真结果有很好的一致性,验证了此方法在片上螺旋电感测试中的有效可行性。     

Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors

Here, an engineered tunneling layer enhanced photocurrent multiplication through the impact ionization effect was proposed and experimentally demonstrated on th...     

High-speed InSb photodetectors on GaAs for mid-IR applications

We report p-i-n type InSb-based high-speed photodetectors grown on GaAs substrate. Electrical and optical properties of photodetectors with active areas ranging from 7.06/spl times/10/sup -6/ cm/sup 2/ to 2.25/spl times/10/sup -4/ cm/sup 2/ measured at 77 K and room temperature. Detectors had high zero-bias differential resistances, and the differential resistance area product was 4.5 /spl Omega/ cm/sup 2/. At 77 K, spectral measurements yielded high responsivity between 3 and 5 /spl mu/m with the cutoff wavelength of 5.33 /spl mu/m. The maximum responsivity for 80-/spl mu/m diameter detectors was 1.00/spl times/10/sup 5/ V/W at 4.35 /spl mu/m while the detectivity was 3.41/spl times/10/sup 9/ cm Hz/sup 1/2//W. High-speed measurements were done at room temperature. An optical parametric oscillator was used to generate picosecond full-width at half-maximum pulses at 2.5 /spl mu/m with the pump at 780 nm. 30-/spl mu/m diameter photodetectors yielded 3-dB bandwidth of 8.5 GHz at 2.5 V bias.     

1.3-μm InP-InGaAsP lasers fabricated on Si substrates by waferbonding

1.3-μm InP-InGaAsP lasers have been successfully fabricated on Si substrates by wafer bonding. InP-InGaAsP thin epitaxial films are prepared by selective etching of InP substrates and then bonded to Si wafers, after which the laser structures are fabricated on the bonded thin films. The bonding temperature has been optimized to be 400°C by considering bonding strength, quality of the bonded crystal, and compatibility with device processes. Room-temperature continuous-wave (RT CW) operation has been achieved for 6-μm-wide mesa lasers with a threshold current of 39 mA, which is identical to that of conventional lasers on InP substrates. Additionally, the lasers fabricated on Si have exhibited higher output powers than the lasers on InP, which is due to higher thermal conductivity of Si substrates. From these results, the wafer bonding is thought to be a promising technique to integrate optical devices on Si and implement optical interconnections between Si LSI chips     

Continuous-wave operation of InGaN multiple-quantum-well laserdiodes on copper substrates obtained by laser liftoff

The performance characteristics of continuous-wave (CW) InGaN multiple-quantum-well (MQW) laser diodes on copper substrates are reported. InGaN MQW laser diodes (LDs) grown on sapphire substrates by metal-organic chemical vapor deposition were successfully separated from the sapphire and transferred onto copper substrates by using a two-step laser liftoff (LLO) process. Continuous-wave threshold currents as low as 65 mA have been achieved with threshold voltages of 6.5 V with a backside n-contact through the Cu substrate, improved heat dissipation due to the Cu substrate allowed CW laser operation up to a heatsink temperature of 80°C. Significant improvements in light output powers were observed for devices on Cu substrates with maximum CW output power of more than 100 mW     

Structure analysis of self‐assembled ErSi2 nanowires formed on Si (110) substrates

The ErSi₂ nanowires were formed on Si(110) substrates by a self‐assembled growth process without a high vacuum system. All of the nanowires were highly parallel and along the Si [1‐10] direction. It was shown by structural analysis that the nanowires consisted of two types, which displayed a similar surface morphology. The first type is ErSi₂ nanowires buried into the Si substrate at a depth of 30 mm, and the other is ErSi₂ thin layers covering a wire‐like Si surface. The latter is suggested to be the remaining structure after evaporation of the first type wires during high‐temperature annealing. © 2009 Wiley Periodicals, Inc. Electr Eng Jpn, 167(3): 58–62, 2009; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20790     

串联负载谐振式DBD型臭氧发生器电源

为解决DBD型臭氧发生器工频升压供电方案的效率低、设备体积庞大和对电网注入大量谐波的问题,采用串联负载谐振式供电电源的方案,通过结合电源开关器件的通断和DBD负载放电与不放电状态,详细分析了工作在完全谐振状态下的串联负载谐振式DBD电路,得出了整个电路在完全谐振状态下的各个工作模态;基于模态分析推导了一系列等式。由推导和分析得出了电路谐振时臭氧发生器承受的最高电压、每个周期的放电功率、与串接的补偿电感无关的特性、DBD负载放电功率、DBD负载参数的调节特性;最后给出了较为实用的工程设计公式。这些研究可供合理设计串联负载谐振式DBD型臭氧发生器的供电电源及分析不同控制方式下DBD电路的工作模态参考。     

固态电解质Li_(10)Ge_(0.75)Si_(0.25)P_2S_(12)的制备与电化学性能研究

采用固相反应法制备了固体电解质Li_(10)Ge_(0.75)Si_(0.25)P_2S_(12)(LSiGPS),用X射线衍射光谱法(XRD)、扫描电子显微镜法(SEM)、交流阻抗技术(EIS)、用恒电流间歇滴定技术(GITT)和恒电流恒电压测试分析了LSiGPS的物相、形貌、离子导电性和锂离子的扩散系数及相对应电池的充放电特性等进行了表征,结果表明,LSiGPS具有四方结构;在-40、25、50℃等较宽广的温度范围内,固态电解质的离子导电性(7.13×10~(-4)、6.57×10-3、2.21×10~(-2) S·cm~(-1))和液态电解液的离子导电性(8.03×10~(-4)、6.72×10-3、2.55×10-2S·cm~(-1))很接近;在3.60、3.95、4.18 V时,固态电解质锂离子扩散系数(4.65×10~(-10)、0.38×10~(-10)、0.53×10~(-10) cm~2·s~(-1))和液态电解液组成的锂离子电池的离子扩散系数(5.80×10~(-10)、0.57×10~(-10)、0.70×10~(-10)cm~2·s~(-1))基本处于一个数量级;LSiGPS固态电解质有很优异的耐高温安全性,在150℃收缩率接近于零。     

提高串联型逆变器频率跟踪速度的研究

分析了串联型逆变器频率跟踪电路的电路参数对逆变器运行的稳定性和动态性能的影响,提出了一种简单实用的变带宽电荷泵锁相环逆变控制方法,对其稳定性和动态响应能力进行了理论分析和仿真验证.仿真结果显示,该方法可以大大提高逆变器频率跟踪速度,并且不会影响环路正常工作时的稳态误差和噪声抑制性能.     

脉冲回波法通信电缆断点测试系统

研究ＡＴ８９Ｃ５２单片机控制的通信电缆断点测试方法,给出了硬、软件的实现方法。     

LLC谐振式磁控管供电电源的研究

研制了一台零电压软开关电源,其目的是代替微波炉中工频变压器和半波倍压整流电路,为磁控管供电。用LLC谐振变换器作为电源主电路,以dsPIC单片机为核心设计了电源的控制系统,并通过改变主电路开关变频率控制法实现了电源输出电压和输出功率的调节。实验结果表明开关频率变动范围内,该电源可安全可靠地实现软开关控制,输出电压完全满足磁控管运行需求,磁控管输出功率可实现连续可调。     

蓄电池充电电流控制的LLC谐振变换器研究

LLC谐振变换器电压控制模式通常采用误差放大器输出电压来直接控制开关频率,该控制方法使LLC谐振变换器的增益与频率之间的关系较为复杂,导致补偿网络设计相对较难,动态响应速度较慢,且大多数控制方案都未考虑集成变压器次级漏感带来的虚拟增益对谐振变换器参数设计的影响。针对以上问题,研究了基于充电电流控制的LLC谐振变换器,分析了变压器次级漏感,推导出电压增益表达式。与传统电压模式控制LLC谐振变换器相比,充电电流控制LLC谐振变换器保持了软开关特性,输入瞬态响应速度和负载动态响应速度均有较大提升,无需压控振荡器,在简化反馈回路设计的同时实现了固有前路反馈。文中详细分析了充电电流控制LLC谐振变换器的工作原理和集成变压器次级漏感的考虑事项,最后通过仿真和实验验证了理论的正确性。     

空气湿度微波谐振腔测量方法

提出一种通过微波谐振腔测量气体介电常数实现空气湿度连续测量的方法,并给出计算不同温度和湿度下空气等效介电常数的模型,设计出作为流动空气湿度传感器的两端采用开放同心圆环结构的特殊结构的谐振腔,对制作的谐振腔进行了气动特性仿真及S参数测量。仿真和测量结果表明：该结构的谐振腔适合于流动气体湿度的在线测量。研制了适用于空气湿度在线测量的微波测量系统。利用此系统对该文设计产生的饱和湿空气环境进行了测量,分析了测量结果和理论结果间的误差。该测量系统在29~38℃范围内能够实现±1.5%空气相对湿度的测量精度。     

Mocvd growth and characterization of PbTiO3 thin films on Pt/Ti/SiO2/Si substrates

Abstract

PbTiO₃ thin films were grown by Metalorganic Chemical Vapor Deposition (MOCVD) on 6′′ platinized Si wafers. In a first stage of investigation, the quality of the platinum surface was correlated with the substrate temperature and the composition of the atmosphere of the warming-up procedure in the reactor. The Pt reflectivity and the surface roughness were clearly modified by higher temperatures and by oxygen environments, though no clear diffusion mechanisms could be observed with Auger. In a second stage of investigation, the growth of PbTiO₃ was studied. Using a standard PbTiO₃ growth procedure, we studied the influence of substrate temperature and gas phase composition. Below 650°C, PbO appears as the main phase; at 650°C, PbTiO₃ and PbO coexist; and at 700°C, only PbTiO₃ is detected. The morphologies were examined by SEM / AFM and the roughness at the interface was studied by ellipsometry.     

Growth and electrical properties of (211) BaTiO3 thin films on Pt-coated Si(100) substrates

Abstract

Barium titanate (BaTiO₃) thin films with high (211) orientation have been prepared on Pt(111)/Si(100) substrates by R. F. magnetron sputtering at a substrate temperature between 550°C and 580°C in an Ar/O₂ atmosphere. The I-V curve of a thin film capacitor (Ag-BaTiO_3-Pt) has been measured and the C-V curves are obtained for frequencies between 100Hz and 1MHz. Neither the I-V curve nor the C-V curves are symmetrical and a very large change in the slope of all curves is found to occur at ～+0.5v.     

电子镇流器中LCC谐振逆变器控制策略研究

针对传统单片机控制LCC谐振逆变器控制过程中出现的问题进行了理论分析:并基于ATgOPWM2B微处理器,提出了改进型半桥LCC逆变器的控制策略.改善后的LCC逆变器不但提高了频率分辨率,改善了启动和功率调节特性,而且解决了频率修改时的波形异常问题.基于理论计算给出了电路各参数的计算方法,然后通过详细的仿真分析优化了设计方案,最后通过试验验证了上述理论和仿真分析的正确性.     

Selective orientation of SrBi4Ti4O15 thin films grown on buffered Si(100) substrates

Many efforts have been paid to uncouple the spontaneous polarizations of layer-structured bismuth-based ferroelectrics along different crystal orientations, obtaining these layered-structure films with non-c-axis orientations. In the paper, SrBi₄Ti₄O₁₅ (m?=?4) thin films have been deposited on Pt/MgO bilayer-buffered Si(100) substrates by pulsed-laser deposition. Selective orientation of SrBi₄Ti₄O₁₅ thin films mediated by different epitaxy relationships between electrode layers and MgO/Si substrates has been demonstrated. Furthermore, different hysteresis loops and remnant polarization of SrBi₄Ti₄O₁₅ thin films with varied orientations have been obtained.