Eight-micron period bubble devices

Magnetic bubble shift register devices of 68 121- and 266 473-bit capacity have been fabricated and tested. The epitaxial garnet bubble films were nominally 1.7 μm thick, supported nominally 1.7-μm diameter bubbles, and had collapse fields of about 260 Oe. The storage area per bit was 64 μm², which was realized with a minimum coded feature dimension of 1 μm and contact photolithography using EBES chrome masters. Initial yields obtained in two experimental batches each of the two chip capacities are discussed. Parametric test results are presented for generator current, transfer current and phase, and rotating field intensity. Nominal values have been established to be 130-mA generate current, 21-mA transfer current, and 60-Oe drive. The detector signals were about half as large as normally obtained from 3.3-μm bubble devices with comparable resistance and conventional design.     

Enhanced Peltier Effect in Wrinkled Graphene Constriction by Nano‐Bubble Engineering

Inspired by the promising applications in thermopower generation from waste heat and active on‐chip cooling, the thermoelectric and electrothermal properties of graphene have been extensively pursued by seeking ingeniously designed structures with thermoelectric conversion capability. The graphene wrinkle is a ubiquitous structure formed inevitably during the synthesis of large‐scale graphene films but the corresponding properties for thermoelectric and electrothermal applications are rarely investigated. Here, the electrothermal Peltier effect from the graphene wrinkle fabricated on a germanium substrate is reported. Peltier cooling and heating across the wrinkle are visualized unambiguously with polarities consistent with p‐type doping and in accordance with the wrinkle spatial distribution. By direct patterning of the nano‐bubble structure, the current density across the wrinkle can be boosted by current crowding to enhance the Peltier effect. The observed Peltier effect can be attributed to the nonequilibrium charge transport by interlayer tunneling across the van der Waals barrier of the graphene wrinkle. The graphene wrinkle in combination with nano‐bubble engineering constitutes an innovative and agile platform to design graphene and other more general two‐dimensional (2D) thermoelectrics and opens the possibility for realizing active on‐chip cooling for 2D nanoelectronics with van der Waals junctions.     

Microbubble based fiber-optic Fabry-Perot interferometer formed by fusion splicing single-mode fibers for strain measurement

We demonstrate an all-fiber optical Fabry-Perot interferometer (FPI) strain sensor whose cavity is a microscopic air bubble. The bubble is formed by fusion splicing together two sections of single-mode fibers (SMFs) with cleaved flat tip and arc fusion induced hemispherical tip, respectively. The fabricated interferometers are with bubble diameters of typically ~100 μm. Strain and temperature sensitivities of fabricated interferometers are studied experimentally; a strain sensitivity of over 4 Pm/με and a thermal sensitivity of less than 0.9 Pm/°C is obtained.     

Dynamic optically reconfigurable gate array very large-scale integration with partial reconfiguration capability

We present a proposal of a partial reconfiguration architecture for optically reconfigurable gate arrays and present an 11,424 gate dynamic optically reconfigurable gate array VLSI chip that was fabricated on a 96.04 mm(2) chip using an 0.35 μm three-metal complementary metal oxide semiconductor process technology. The fabricated VLSI chip achieved a 2.21 μs partial reconfiguration.     

Temperature-programmed GC using silicon microfabricated columns with integrated heaters and temperature sensors

Columns were fabricated in silicon substrates by deep reactive-ion etching. The channels were sealed with a glass wafer anodically bonded to the silicon surface. Heaters and temperature sensors were fabricated on the back side of each column chip. A microcontroller-based temperature controller was used with a PC for temperature programming. Temperature programming, with channel lengths of 3.0 and 0.25 m, is described. The 3.0-m-long channel was fabricated on a 3.2 cmx3.2 cm chip. Four columns were fabricated on a standard 4-in. silicon wafer. The 0.25-m-long channel was fabricated on a 1.1 cmx1.1 cm chip, and approximately 40 columns could be fabricated on a 4-in. wafer. All columns were coated with a nonpolar poly(dimethylsiloxanes) stationary phase. A static coating procedure was employed. The 3.0-m-long column generated about 12000 theoretical plates, and the 0.25-m-long channel generated about 1000 plates at optimal carrier gas velocity. Linear temperature ramps as high as 1000 degrees C/min when temperature programmed from 30 to 200 degrees C were obtained with the shorter column. With the 0.25-m-long column, normal alkanes from n-C5 through n-C15 were eluted in less than 12 s using a temperature ramp rate of 1000 degrees C/min. Temperature uniformity over the column chip surface was measured with infrared imaging. A variation of about 2 degrees C was obtained for the 3.0-m-long channel. Retention time reproducibility with temperature programming typically ranged from +/-0.15% to +/-1.5%. Design of the columns and the temperature controller are discussed. Performance data are presented for the different columns lengths.     

Magnetic bubble logic component library

A comprehensive library of magnetic bubble logic components has been established, with emphasis on standardization in terms of dimensions and I/O to facilitate VLSI chip composition. These components were designed in a current-access perforated-sheet configuration and fabricated on magnetic garnet wafers supporting 2-µm bubbles. The operating margin for each component was studied individually on 8-µm period devices at 1 MHZ by using a high-speed magneto-optical sampling-camera system. The bubble-to-bubble interaction force was found to be very reliable in producing successful logic operation with a 12-percent bias-field margin for the XOR/AND gate equal to 80 percent of the bubble-propagation margin and about 60 percent of the free-bubble bias-field margin. The experimental results show 10.8, 10.7, 10.2, 10, 10.6, 8.5, 12, 8.5, 15, and 9.5-percent bias-field margins for the SWITCH, AND/OR, COMPARATOR, SEARCH, LATCH, BIT-PAIR SEPARATOR, MERGER, CROSSOVER, ANNIHILATOR, and SPLITTER gates, respectively. An 8.5-percent overlapped bias margin has been obtained for all of the logic components. Transient pictures taken with a small incremented delay revealed that the bubble motion in perforated-sheet logic devices is uniform both in the velocity excursion and shape distortion. The behavior of various components at different values of the bias field and drive current is all qualitatively interpretable on the basis of experimental observations. The feasibility of these logic components is successfully demonstrated.     

Complementary permalloy bubble propagation structure

Field-access bubble propagation has been achieved in a novel Permalloy structure made up of a pattern and its complement. The pattern is defined by a step in a nonmagnetic spacer on top of which the Permalloy is deposited leaving the Permalloy in two levels. The two layers act in concert to provide coherently travelling potential wells for bubble propagation. The stepped structure is fabricated using a lift-off technique (4000-6000 Å) of Schott glass. Permalloy (1500-2500 Å) is then deposited by radio frequency sputtering over the entire device area. Devices of 10-μm period and 2- to 3-μm minimum feature were fabricated on 2-μm bubble garnets. A propagation margin >10 percent was obtained for 35-to 50-Oe drive fields.     

Bubble dynamics in T-bar-type circuits

A theoretical model for bubble propagation under T-bar type overlays due to an in-plane rotating field is developed. By making certain assumptions about the nature of the overlay magnetisation, it is shown that bubble driving forces can be readily calculated for a circular bubble of varying diameter moving freely in 2-dimensions. Expressions for the frictional forces acting on a bubble are derived and the resulting equations are solved to yield the bubble centre trajectory, the radius, velocity and phase variations. This analysis is applied to examine bubble propagation along a straight portion and around a corner of a T-bar circuit. Cases of successful propagation of an isolated bubble, as well as of failure to propagate, are given. Bias margins for a straight T-bar track at 100 kHz are obtained theoretically and compared with experimental results for a chip having the same parameters.     

凝固速率对藕状多孔金属结构的影响

使用自制的Gasar装置制备出Cu、Mg和Ni三种藕状多孔金属, 将理论计算与实验结果相结合研究了材料的凝固速率对多孔结构的影响。结果表明, 对于三种多孔金属, 随着气泡半径的增大气泡的上浮速率逐渐增大。仅当金属凝固速率最大值在气泡上浮速率的范围内, 才能制备出有大量规则气孔的藕状多孔结构。     

离体电生理检测微电极阵列传感器的设计与制备(英文)

针对动物离体组织电生理检测的实际需求,设计并制备了一种以载玻片为基底,以微电极阵列为敏感元件,并将灌流装置集成一体的传感器芯片.采用微电子机械系统(MEMS)技术中的薄膜工艺完成了微电极阵列的制备,其导电层和绝缘层分别是铂和氮化硅.采用聚二甲基硅烷(PDMS)浇铸制成埋有管道的方形灌流槽.该传感器可保持离体组织的生理活性,同时实现电生理信号的64通道同步记录.整个芯片结构紧凑,接口简单,使用方便.对芯片的电学性能进行了研究,结果表明,通过在微电极表面电镀修饰铂黑,可有效降低其交流阻抗,提高信噪比.     

溶胶-凝胶法制作塑料基DNA提取芯片以及应用于从人血中提取DNA

本文用溶胶-凝胶法在塑料表面制作二氧化硅涂层，并利用制作的二氧化硅层来提取DNA。利用这种方法制作了塑料基的DNA提取芯片，并将该芯片应用于从人血中提取DNA。结果表明：经过溶胶涂渍、在内表面制作二氧化硅层的芯片能够实现从血液中提取DNA，而没有经过溶胶涂渍的芯片无法提取DNA。涂渍的芯片所提取出的DNA能够满足聚合酶链反应的需要。     

Morphology and mechanical property relationship in linear low-density polyethylene blown films

Linear low-density polyethylene (LLDPE) blown films fabricated under two different processing conditions, namely a non-stalk bubble configuration and a stalk bubble configuration, were investigated. Morphological characterization was performed using small-angle X-ray scattering, transmission electron microscopy, infrared dichroism, and differential scanning calorimetry. The findings on crystal orientation characteristics of the films suggest that modification on the widely accepted row orientation model of Keller and Machin may be needed. In comparison to the conventional non-stalk bubble geometry for LLDPE film blowing, the stalk bubble configuration can produce a more randomly orientated lamellar texture, resulting in less anisotropy in mechanical properties and a higher dart impact resistance. A good correlation between mechanical properties and morphological features was found.     

PMMA微流控检测芯片的设计与制作

设计并制作了一种PMMA（polymethyl methacrylate）材料的微流控检测芯片,将外界气体驱动液体用于实际水样的分析和检测．利用精密加工的方法加工出芯片的整体尺寸为86mm×60mm×4．5mm．采用溶胶-凝胶的改性方法对微通道管路进行亲水处理,正硅酸乙酯的水解缩合生成了一层溶胶．凝胶覆盖在PMMA表面,从而大大提高了亲水性．在室温下对芯片进行键合,溶剂为二氯乙烷和无水乙醇按1：1混合的混合液．该方法避免了微通道的坍塌,有效防止了堵塞．实验证明,芯片接触紧密,且冲击强度能够满足要求．同时,芯片上集成了多个阀．阀膜选用0．5mm厚的硅胶膜,采用硅橡胶做黏合剂     

Fabrication of stem cell chip with peptide nanopatterned layer to detect cytotoxicity of environmental toxicants

A stem cell chip with peptide nanopatterned layer was fabricated to detect the effects of environmental toxins on human neural stem cells (HB1 x F3) electrochemically. The cell chip was recently developed as in vitro monitoring tool for determining the cell viability simply and rapidly compared to the conventional methods. However, cell chip composed of neural stem cells have not been reported due to the difficulties for maintaining its stemness and cell attachment on the artificial electrode surface, which is critical for sensitive detection of cell viability electrochemically. In this study, we fabricated peptide nanopatterned layer on gold electrode for increasing the affinity between the stem cell and an artificial electrode surface by self-assembly technique. After the confirmation of fabricated nanopatterned surface, neural stem cells were immobilized on chip surface and the viability was measured by electrochemical method. Thereafter, neural stem cells were treated with two kinds of common environmental toxins, and the intensities of reduction peak obtained by cyclic voltammetry (CV) were decreased with the increase of concentrations of environmental toxins. These electrochemical results were validated by 3-(4,5-Dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide (MTT) assay. Our newly developed stem cell chip can be used as useful label-free analysis tool for detecting drug effects or for assessing the toxicity electrochemically.     

Cell chip with nano-scale peptide layer to detect dopamine secretion from neuronal cells

A cell chip with a nano-scaled thin film of cysteine modified synthetic oligopeptide C(RGD)4 was fabricated to detect dopamine secretion from neuronal cells. Thin C(RGD)4 peptide layer was fabricated on chip surface for increasing the binding affinity of cells to gold electrode surface, which is essential for the electrochemical detection of dopamine released from PC12 cells. The structural formation of the peptide thin film was confirmed by both atomic force microscopy (AFM) and scanning electron microscopy (SEM). Redox characteristics of chemical dopamine were firstly characterized by voltammetric tool to compare the dopamine released from PC12 cells. Cells grown on the chip were then subjected to cyclic voltammetric (CV) analysis after 48 hours of incubation. The intensities of reduction peaks were found to be increased with increasing the concentrations of PC12 cells. In addition, the electrochemical redox signal increased more in the cells treated with glucose and potassium compared to the control group. Hence, the developed cell chip can be used to determine the effects of drugs on living cells electrochemically.     

PDMS微/毫流控芯片的简易快速制备及其疏水性研究

将玻璃片/管、锡箔等材料进行组装、通道搭建制备出带有管路图案的容器,再将聚二甲基硅氧烷(PDMS)预聚体浇注到该容器中固化成型,之后通过模具拆卸、切割制备出整体式PDMS微/毫流控芯片.该法可获取各种微通道尺寸保真性好的整体式芯片,其通道截面圆形度与由热压法制备的微流控芯片相比有明显提高.另将获得的PDMS芯片经过30 min紫外改性后,其疏水性得到明显改善,与H2O的接触角由钝角变为了锐角,并在室温下静置能维持1 h左右的改性,完全能够满足液滴成型实验的时间要求.另外将该法制备的PDMS整体式芯片用于单分散液滴、双重液滴制备时,可在较宽的流速范围(4 mL/h~36 mL/h)内得到粒径可控的液滴,并且液滴在芯片通道中不易破乳,表现出良好的稳定性.这对于靶球制备、功能材料合成、活性成分保持等应用有重要意义.     

Microfluidic actuation using electrochemically generated bubbles

Bubble-based actuation in microfluidic applications is attractive owing to elementary microfabrication requirements. In the present study, the mechanical and chemical characteristics of electrochemically generated bubble valves were studied. By generating electrochemical bubbles as valves directly inside the channel, valves could be closed and opened in milliseconds. Whereas bubble inflation (or valve closing) rate increases with applied voltage, small microfluidic dimensions accelerate bubble deflation rates. It is found that bubbles need not collapse fully to restore full flow, and the channel opens when its hydraulic resistance equals that between the bubble and the wall--a process requiring only milliseconds. Since only picomoles of salt are needed to generate bubbles, pH gradients that are invariably associated with electrochemical reactions were readily suppressed by using a small amount of buffer, as visualized by a pH-sensitive fluorescent dye. A range of common laboratory reagents and electrolytes in varying concentrations, including weak to strong acids and bases, as well as nonaqueous/aqueous mixtures were successfully tested. Using such bubble valves, an eight-way multiplexer was fabricated and tested.     

相变材料及相变材料微胶囊/聚乙烯共混物的结构与性能

以正二十烷、聚乙烯和乙丙橡胶等为原料经熔融挤出,制成正二十烷含量10％～65％的共混切粒。以正十八烷微胶囊和聚乙烯为原料经熔融挤出,制成微胶囊含量10％～60％的共混切粒．采用差示扫描量热仪和熔融指数仪测试了多种组成切粒的相变性能和流动性能。切粒的热焓随相变材料含量的增高而增大,含65％正二十烷的切粒的热焓为160J／g左右,含有60wt％微胶囊的切粒的热焓为70J／g左右。切粒的熔融指数随相变材料或相变材料微胶囊添加量的增高呈现指数增大或反S曲线的形式。     

基于库尔特计数器原理的纳通道热气泡检测系统

本文提出并实现了一种基于库尔特计数器原理的纳通道热气泡检测技术.利用微纳加工技术,设计、制作了可以有效检测纳米级通道中的热气泡特性的实验器件,搭建了检测平台,实际考察了截面尺寸为100 nm×100nm的纳通道中的热气泡成核行为.实验结果表明,随着纳通道中溶液温度的逐渐增加,流经纳通道的电流逐渐增大,而后呈下降趋势,再经过一段时增时减的复杂变化后,电流信号最终消失.实验结果间接表明,纳通道中产生了阻碍电流的热气泡,热气泡体积的增大与减小对应通道电流的减小与增加,经过一段复杂的体积变化后,热气泡最终完全阻塞了纳通道.可见,基于库尔特计数器原理的纳通道热气泡检测器件可以有效用于纳通道中热气泡复杂行为的研究.     

Ion-sensitive field-effect transistors in standard CMOS fabricated by post processing

Highly integrated ion-sensitive field-effect transistor (ISFET) microsystems require the monolithic implementation of ISFETs, CMOS electronics, and additional sensors on the same chip. This paper presents new ISFETs in standard CMOS, fabricated by post-processing of a standard CMOS VLSI chip. Unlike CMOS compatible ISFETs fabricated in a dedicated process, the new sensors are directly combined with state-of-the-art CMOS electronics and are subject to continuous technology upgrading. The ISFETs presented include an intermediate gate formed by one or more conducting layers placed between the gate oxide and the sensing layer. The combination of the highly isolating gate oxide of the MOS with a leaky or conducting sensing layer allows the use of low temperature materials that do not damage the CMOS chip. The operation of ISFETs with an intermediate gate and sensing layers fabricated at low temperature is modeled. ISFETs with a linear pH response and drift as low as 0.3 mV/h are reported.