LN和Mg:LN晶体电光调制器

Mg:LN晶体具有很高抗光折变能力。Mg:LN电光调制器可用于要求功率密度高的调制系统中。 LN和Mg:LN晶体电光调制器的几何尺寸和半波电压的关系的计算公式为     

1064nm低电压薄膜铌酸锂电光调制器

低半波电压电光调制器是实现大规模光电集成的关键。文章提出了一种半波电压低于1.5 V的薄膜铌酸锂马赫-曾德尔(Mach-Zehnder, MZ)电光调制器，选用绝缘体上单晶薄膜铌酸锂材料作为设计基础，分析了直波导、多模干涉耦合器、弯曲波导和调制臂等结构对电光调制器的影响。结果表明，当调制臂长为3 mm时，该薄膜铌酸锂电光调制器具有1.05 V的低半波电压、0.319 dB的低损耗和27 dB的高消光比。同时，该调制器半波电压长度积为0.315 V·cm,调制效率高，具有与CMOS技术兼容的半波电压，有利于大规模光电集成。     

基于铌酸锂薄膜的Y波导集成调制器设计

近年来,基于薄膜铌酸锂（TFLN）平台的高性能电光调制器以其小体积、低能量损耗等特点受到广泛关注。本文提出了一种新的具有垂直电极结构的Y波导铌酸锂薄膜电光调制器。研究了调制器的半波电压与缓冲层厚度之间的关系,优化了Y波导的设计参数,最后设计得到插入损耗<5 dB, 半波电压<1.5 V的高性能调制器。本文不仅为基于TFLN平台的小型化波导的设计和实现提供了思路,而且为制造高性能和多功能的电光调制器提供了实验依据。     

基于激光相控阵原理的相位调制器半波电压测量方法

半波电压是电光相位调制器的一个重要指标, 针对现有半波电压测量方法存在的测量误差大、测量装置复杂等问题, 提出了基于激光相控阵光束扫描原理的半波电压测量方法.通过理论分析, 得到了远场主光束的偏移量和相位调制器半波电压的关系表达式.搭建了12 全光纤激光相控阵光路, 对铌酸锂波导相位调制器的半波电压进行了实验测量, 改变相位调制器的加载电压, 记录多幅远场光强分布图, 通过求平均值减小测量误差, 而且根据远场光强分布的变化得到了相位调制特性曲线.结果表明, 该方法测量装置简单, 不仅可以精确地测量半波电压, 还可以对相位调制线性度进行分析, 具有重要的工程应用价值.     

高效微带线聚合物电光调制器的研制

设计、制作并测试了1.55 m 光波长的微带线行波电极电光调制器。如果聚合物材料的电光系数33=30 pm/V,中心电极L 为20 mm,设计的调制器性能参数半波电压为6.70 V。用自主合成的发色团分子组成二阶非线性光学聚合物材料做为芯层制作的聚合物调制器,对调制器的各项性能参数进行了直流、低频和微波性能的测试,采用不同极化方法,在1.55 m 波长上测得低频半波电压分别为10.5 V(电晕极化)和4.9 V(接触极化),折算得芯层材料的电光系数分别为21 pm/V 和45 pm/V。测得消光比为24 dB。用矢量网络分析仪测试电极系统的微波性能,S 参数反映了此电极系统具有低的微波传输损耗和反射损耗。     

基于小信号的电光调制器半波电压测量方法北大核心CSCD

针对马赫-曾德尔(Mach-Zehnder,M-Z)型电光调制器高频半波电压测量方法复杂、测量仪器昂贵、测量成本高等问题,提出了一种基于小信号的高频半波电压测量方法。该方法利用光功率计的积分特性,仅使用光源、信号发生器、直流电源及光功率计,通过测量待测器件在有射频信号输入和无射频信号输入下输出功率极值的变化,即可实现对M-Z型电光调制器高频半波电压的高精度测量。采用OptiSystem开展了测量方法的仿真验证,采用Matlab完成了测量误差分析,并在1 kHz频率下对测量方法进行了实验验证。仿真及实验结果表明:该测量方法可以仅利用小信号完成M-Z型电光调制器半波电压的准确测量,1 kHz下绝对误差小于0.5%,换算所得的1 dB压缩点在10 GHz~40 GHz频率范围内与频响曲线的相对误差小于±0.3 dB。     

新型行波电极超宽带LiNbO_3电光调制器的优化设计

采用有限元法和增量电感公式对一种新型电极结构的电光调制器进行了理论分析和设计.计算中对损耗系数进行了修正.计算结果表明这种结构可以灵活地实现相速匹配和有效降低电极损耗.是一种具有超宽带潜力的调制器.用带宽和驱动功率的比值作为衡量调制器特性优劣的标准.得到了这种电极结构的一些优化尺寸.并从中发现适当增大电极间隙有利于提高器件性能.利用优化结果.给出了一带宽为100GHz.半波电压为6V的调制器设计例子.     

宽带多频段微波光子链路性能研究

覆盖C、Ku、Ka三个频段的多频段微波光子系统链路性能受自频段三阶交调失真、不同频段间二次谐波和二阶交调失真以及电光调制器半波电压变化的影响.分析了不同频段内干扰信号,得到了链路性能优化时调制器直流偏置电压,讨论了不同输入射频功率时各频段主要干扰信号.     

一种基于UV-ESA自校准和高精度的PM电学测量方法

电光相位调制器（Phase Modulator,PM）因无需偏置,线性调制和插损小等优点,被广泛应用于相干光通信、微波信号产生、处理和测量等领域.调制指数和半波电压是评估PM性能的关键参数.传统基于（Optical Spectrum Analyzer,OSA）的方法面临测量分辨率低和存在测量盲区问题.为此,本文提出了一种基于电谱分析（Unequal Voltage based on Electrical Spectrum Analyzer,UV-ESA）的自校准、高精度的PM特性参数测量方法.该方法利用同频、不同驱动电压比的情况下,通过分析失谐光学载波和调制边带分别与载波拍音电谱,实现PM调制指数和半波电压的高频特性参数测量.该方法不需改变测量链路结构,无需辅助宽带微波源或电光调制器,验证了所提方法的有效性,并对比OSA方法对结果的准确性进行了验证.     

聚焦光调制器

日本东京电气通信实验室研究了一种聚焦光调制器(见图),这种器件的特点是激光束在一根长而薄的电光晶体棒而传输,并进行周期性再聚焦,可降低半波电压。建议用球形端面的棒做聚焦元件,但制     

Thin Layer Design of X-Cut Lithium Niobate Electrooptic Modulator With Slotted SiO2 Substrate

In this letter, we present a novel lithium niobate (LN) electrooptic modulator. The proposed modulator incorporates a thin layer of LN and a slotted substrate structure that together facilitate velocity and impedance matching. A full-wave analysis of the proposed modulator is undertaken in order to establish the frequency dispersion effects with respect to the devices microwave effective index N_m, characteristic impedance Z_c, and half-wave voltage length product V_piL.     

High-performance optical modulator with a wide center electrode and thin x-cut LiNbO/sub 3/ substrate

We propose an excellent large-bandwidth back-slot lithium niobate (LN) modulator with a wide center electrode of typically 50 /spl mu/m or wider and relatively thin electrodes. From the calculation, a modulator with a 3-dBe bandwidth of 34 GHz and a half-wave voltage of 2.0 V for a 50-/spl Omega/ characteristic impedance system was realized theoretically. This means when their half-wave voltages are identical, by applying a wider electrode, the modulator bandwidth becomes 2.6 times larger than that of a conventional one. We also confirmed experimentally that the wide center electrode structure is effective for back-slot LN modulators.     

Numerical simulation of ultra-compact electro-optic modulator based on nanoscale plasmon metal gap waveguides

An ultra-compact Mach-Zehnder (MZ) electro-optic (EO) modulator composed of nanoscale metal gap waveguides is numerically demonstrated. Propagation of surface plasmon polaritons in nano-size channels and their EO modulations is investigated by the finite-difference time-domain method considering the Lorentz-Drude model. The half-wave voltage (V _pi) of the resulting MZ modulator for push-pull operation is 1.73 V using the interference arm with a sub-micron length (500-nm).     

Design and analysis of coplanar waveguide optical modulator using finite element method

An analysis is given on the finite element method (FEM) for calculating the various parameters of optical modulators and a computer program is written to solve the finite element equation. Based on this method, a Mach-Zehnder type electro-optic modulator with coplanar waveguide (CPW) electrode is designed and fabricated. When compared with the Fourier series method, small differences on the 3-dB bandwidth, characteristic impedance and half-wave voltage, etc. are obtained.     

硅酸镓镧晶体电光调制器

用新型非线性材料硅酸镓镧(LGS)晶体制作了电光调制器,研究了单晶硅酸镓镧晶体的电光效应。利用极值法和倍频法测定了硅酸镓镧晶体的半波电压值,计算出电光系数γ11分别为1.85pm/V和1.90pm/V,对比发现倍频法比极值法实用、快速、方便。测定了在0.3～0.6328μm波长内硅酸镓镧单晶的旋光率为21.1°～2.6°/mm。利用自制的高压调制电源进行了调制实验,实验结果表明:有旋光性非线性材料硅酸镓镧晶体是一种新型电光晶体,可用作电光调制器,调制信号稳定。     

Electro-optic polymer-based modulator design and performance for 40 Gb/s system applications

We investigate the potential performance of polymer-based electro-optic (EO) modulators for high-speed systems at 40 Gb/s and beyond. General strategies and specific designs are presented to reduce the modulator half-wave drive voltage while maintaining a broadband response. In addition, we consider practical system requirements that may allow the relaxation of certain modulator design parameters to further improve performance. Designs are presented that may enable a 3-dB electrical bandwidth of 30 GHz with a single-ended half-wave drive voltage of /spl sim/1.6 V for 1.3-/spl mu/m light assuming an effective EO coefficient of 30 pm/V in the waveguide core.     

全封装的薄膜铌酸锂电光调制器（特邀）

高速电光调制器是宽带光通信网络和微波光子系统中的关键元器件之一。相对于体材料铌酸锂而言,薄膜铌酸锂材料由于其较强的光场限制能力,在构建小尺寸、宽带、低半波电压的高性能电光调制芯片上有独特的优势。文章基于薄膜铌酸锂材料研制了一种3 dB带宽不低于50 GHz的电光调制芯片,并采用光纤与波导水平端面耦合的光学封装方案和基于1.85 mm同轴接头的射频封装方案,实现了全封装的薄膜铌酸锂电光调制器。测量结果表明,封装后器件的光学插入损耗小于等于5 dB,3 dB带宽大于等于40 GHz,射频半波电压小于等于3 V@1 GHz。     

Low Half-Wave Voltage X-Cut Thin LiNbO $_{3}$ Sheet Optical Phase Modulator With Asymmetric Coplanar Waveguide Electrode

We present a novel X-cut lithium niobate optical phase modulator. Low driving voltage was realized by adopting both an X-cut thin LN sheet structure and an asymmetric coplanar waveguide electrode. A low half-wave voltage of 2.9 V in 20-GHz operation was obtained.