学术前沿

正壳聚糖/淀粉/ZnO复合膜的制备与性能作者:郑科旺,付梅芳,黄超凡,颜永斌,李伟,覃彩芹来源:包装工程,2017(7)摘要:目的是以壳聚糖和玉米淀粉为主要成膜基质,以纳米ZnO为添加剂,研究复合膜的相关结构和性能。方法采用溶液共混法将壳聚糖溶液、淀粉糊化液和纳米Zn O质均混合,然后流延成膜,分析壳聚糖/淀粉的质量比和纳米ZnO的含量对复合膜力学性能、水蒸气透过率(WVP)的影响,而且通过红外光谱、扫描电镜、X射     

可食性淀粉/壳聚糖复合膜的制备与性能研究

目的 利用壳聚糖对淀粉改性制备可食性复合膜,研究复合膜的结构与性能。方法 通过溶液共混法将壳聚糖的乙酸溶液与淀粉糊化液均匀混合,然后流延成膜,分析壳聚糖、甘油、Na Cl含量对复合膜的力学性能、水蒸气透过率的影响,通过X-射线衍射、扫描电镜和热重分析对复合膜的结构和性能进行表征分析。结果 复合膜中淀粉与壳聚糖两组分具有良好的相容性;甘油和Na Cl的添加有利于促进淀粉的塑化,改善复合膜的柔性,同时影响其力学强度和水蒸气透过率。结论 当淀粉与壳聚糖质量比为5∶3、甘油质量分数为25%、Na Cl质量分数为5%时,所制备的膜具有优异的综合性能。     

不同淀粉原料对淀粉-壳聚糖复合膜性能的影响

目的 研究不同淀粉原料对复合膜性能的影响,为淀粉基膜的原料选择提供参考.方法 选取土豆淀粉、红薯淀粉、绿豆淀粉、豌豆淀粉、木薯淀粉、小麦淀粉等6种常见的市售淀粉为原料,将30 g/L的淀粉溶液和20 g/L的壳聚糖溶液以1:1的体积比混合,再添加一定量甘油为增塑剂,浇铸成膜,测定膜的力学性能和渗透性能.通过X-射线衍射、红外光谱、扫描电镜和接触角等仪器对复合膜的性能和结构进行表征分析.结果 不同淀粉基复合膜间的性能存在较大差异.当土豆淀粉直链质量分数为14％时,复合膜的断裂伸长率和透气性相对最好,断裂伸长率可达55.65％,氧气透过系数为75.52 cm3/(m2·24 h·0.1 MPa);当小麦淀粉支链质量分数为27％时,复合膜的抗拉强度和阻隔性能相对最好,抗拉强度可达14.04 MPa,氧气透过系数为3.31 cm3/(m2·24 h·0.1 MPa),水蒸气透过系数为24.51 g/(m2·24 h).复合膜均为亲水性材料,且各成膜物质之间具有良好的相容性.结论 当淀粉直链质量分数较高时,复合膜的抗拉强度和阻隔性能较好;当淀粉支链质量分数较高时,复合膜的断裂伸长率较好,阻隔性能较差.淀粉原料不同,复合膜材料的特性也不同,可满足产品对包装材料性能的不同需求.     

茶多酚对壳聚糖/聚乙烯醇复合膜性能的影响

目的以茶多酚为改性剂对壳聚糖/聚乙烯醇复合膜进行共混改性,制备一种综合性能良好的绿色包装材料。方法采用溶液共混法制备不同茶多酚质量分数的壳聚糖/聚乙烯醇复合膜,并对其进行红外光谱分析,以及力学性能、水溶性、气体阻隔性、抗氧化性能的测试。结果茶多酚与壳聚糖/聚乙烯醇基质间发生了分子间相互作用,当茶多酚的质量分数为2%时复合膜的综合性能最好,拉伸强度提高了4.99%,且可保持较高的断裂伸长率,水溶性、水蒸气透过率和氧气透过率分别降低了82.43%,51.40%和72.77%,抗氧化能力增强了58.54%。结论添加适量的茶多酚能够提高壳聚糖/聚乙烯醇复合膜的力学性能和耐水性,并改善其气体阻隔性和抗氧化性能。     

壳聚糖/羧甲基淀粉复合膜的制备及性能研究

以溶液共混的方法制备一系列壳聚糖单一膜及壳聚糖/羧甲基淀粉(CS/CMS)复合膜。通过测定力学性能、水蒸汽透过率来研究CS/CMS复合膜的最佳制备工艺。结果表明:当CS添加量为2g/100mL,CS∶CMS=4∶1(质量比),干燥温度为55℃,冰醋酸浓度为2%时,所制复合膜性能最佳。     

PVA-壳聚糖/有机累托石复合膜的结构与性能

目的将聚乙烯醇(PVA)引入壳聚糖(CS)/有机累托石(OREC)复合体系制备插层效果、力学性能、抗紫外老化及阻隔性能良好的插层纳米复合膜。方法利用溶液流延法制备PVA-CS/OREC系列复合膜,以XRD及SEM研究复合膜的插层结构及OREC在基体中的分散性,研究复合膜的力学性能、抗紫外辐射性及水蒸气透过性。结果 OREC及PVA添加量较少时可与CS形成良好的插层结构。当OREC质量分数为2%,PVA质量分数为10%时的复合膜(标记为PVA10-CS/OREC2)插层结构最好,OREC在CS及PVA基体中分散性最好,与OREC质量分数为2%且不含PVA的复合膜(标记为CS/OREC2)相比,拉伸强度提高42.2%,断裂伸长率提高30%,水蒸气透过量降低10.2%,复合膜经紫外辐射后拉伸强度保持率、断裂伸长保持率仍达82.5%及68.2%。结论 PVA10-CS/OREC2膜可作为医用膜和药品、食品等的包装材料。     

POSS对壳聚糖膜的阻湿与拉伸性能的影响

目的研究以四甲基铵基笼形聚倍半硅氧烷(Octa TMA POSS)为填料,制备壳聚糖基复合膜,对壳聚糖薄膜的水蒸气阻隔性能和力学性能进行改善。方法采用溶液共混流延法制备复合膜,测定其水蒸气透过系数、表面接触角、溶胀度、溶解度、吸附等温曲线、拉伸性能、成膜液流变性能、微观形貌和X射线衍射等。结果笼形聚倍半硅氧烷的加入可提高复合膜对水分子的阻隔性,尤其是质量分数为3%时,其水蒸气透过系数下降了15.9%。同时,壳聚糖薄膜的力学性能也得到改善,在质量分数低于5%时,壳聚糖薄膜的抗拉强度、弹性模量可同时得到提高。结论四甲基铵基笼形聚倍半硅氧烷的加入可改善壳聚糖薄膜的阻湿性能和力学性能,可大大提升其在食品包装领域的应用潜力。     

柔性壳聚糖抗菌膜的制备及性能研究

目的获得具有优异柔性与抗菌活性的壳聚糖复合膜。方法以明胶为增强聚合物,甘油为增塑剂,采用流延成型法构筑柔性壳聚糖薄膜,并通过浸泡硝酸铜/氢氧化钠溶液原位负载纳米氧化铜,以提高薄膜的抗菌性。研究壳聚糖同明胶的质量比及甘油添加量对复合膜力学性能的影响,考察硝酸铜浓度对复合膜水蒸气透过率、透光率、抗菌性的影响。通过红外光谱(FT-IR)和X-射线衍射(XRD)对薄膜结构进行表征。结果当壳聚糖与明胶的质量比为5∶5,甘油质量分数为20%时,复合膜拉伸强度为(3.23±0.31)MPa,断裂伸长率为(159.88±4.14)%。增加硝酸铜浓度,壳聚糖/明胶/氧化铜复合膜的水蒸气透过率先降低后增加,透光率逐渐降低,对金黄色葡萄球菌与大肠杆菌的抗菌活性逐渐增强。当硝酸铜浓度为0.05 mol/L时,复合膜的最佳水蒸气透过率为(30.60±4.02)g·mm/(m2·s·kPa),最佳透光率为(72.61±8.13)%;当硝酸铜浓度为0.25 mol/L时,复合膜对大肠杆菌的最大抑菌圈直径为(27.0±3.0)mm;当硝酸铜浓度为0.30mol/L时,复合膜对金黄色葡萄球菌的最大抑菌圈直径为(26.1±3.1)mm。结论制备得到的壳聚糖/明胶复合膜具有优异的柔性和抗菌活性,在食品包装保鲜领域具有潜在的应用前景。     

墨汁碳纳米粒增强壳聚糖复合膜的制备及性能研究

利用墨汁中碳纳米粒为增强体,以流延法制备墨汁/壳聚糖复合膜。采用扫描电子显微镜(SEM)对复合膜的结构进行了表征,研究不同的墨汁加入量对墨汁/壳聚糖复合膜力学、耐水以及光透过率等性能的影响。结果表明低含量墨汁中碳纳米粒可均匀分散在壳聚糖基体中。与纯壳聚糖膜相比,加入墨汁后的复合膜的力学性能和耐水性能得到了明显的提高。复合膜的光透过率随着复合膜中墨汁含量的增加急剧下降,具有非常优异的光阻隔性能。     

纳米ZnO-T树脂改性聚乙烯薄膜的制备和性能

以低密度聚乙烯为基材,将改性T树脂和改性纳米ZnO加入其中,利用双螺杆造粒机以及流延机通过熔融共混制得改性聚乙烯薄膜,并研究改性T树脂和改性纳米ZnO的含量对聚乙烯薄膜的抑菌效果、水蒸气透过量、氧气透过量、力学性能、微观结构、红外光谱及紫外透过率的影响。结果表明,当加入1.5%的改性纳米ZnO时,薄膜的抑菌性能随改性T树脂含量的不断增大而更加显著,紫外线透过率的变化趋势为先降低后上升。当改性纳米ZnO的质量分数为1.5%、改性T树脂的质量分数为1%时,水蒸气透过量和氧气透过量最小,抗拉强度和断裂伸长率最大。薄膜的阻隔性效果和抑菌性能较好,可应用于食品包装,延长食品的保质期。     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.     

Tc trend in high-Tc superconductors

In our previous works, we have shown that most existing ceramic superconductors can be considered to be built of superconductor-semiconductor composite and we have estimated the change in phonon spectrum of the intrinsic superconductor unit if a semiconductor unit is attached to it. Moreover, the proximity effect under the size quantization condition has been examined in the superconductor-semiconductor composite. Each of the stated effects by itself could causeT _c enhancement in general as more semiconductor blocks are added to the system. We extend our study in this paper to analyze the combined actions of phonon spectral change and proximity effect without size quantization condition onT _c variation in members of the Tl₁ series of high-T _c superconductors. Our results indicate that an optimumT _c is obtained if the stated effects are included in the idealized unit cells of the superconductors made up of a superconductor-semiconductor array.     

Anomalous Hall Effect in Sn1?x?yMnxEuyTe and Sn1?x?yMnxEryTe Mixed Crystals

The Anomalous Hall Effect (AHE) was investigated in IV–VI ferromagnetic semimagnetic semiconductors of Sn_1–x Mn _x Te codoped with either Eu or Er. The analysis of experimental data is as follows. Hall resistivity and magnetization showed that AHE coefficient R _s depends on temperature and its value decreases with thetemperature increase. We observe that above ferromagnet–paramagnet transition temperature R _s changes sign. We discuss the possible physical mechanisms responsible for observed temperature dependence of R _s , particularly change of the sign.     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.     

Electrostriction in Pb (Zn13Nb23)O3

The electrostriction in $\text{Pb (Zn}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Nb}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{)}\text{O}{}_3$ crystals has been investigated using a strain gauge method. In the ferroelectric phase below 140 C, the strain vs the electric field shows a hysteresis, which is ascribed to the effect of ferroelectric domains. A quadratic relation holds between the strain x and the electric polarization P as x = QP² above about 170 C in the paraelectric phase. Values of the electrostrictive Q coefficients are determined from the measurements near 190 C, as Q₁₁ = 1.6·10^?2m⁴/C², Q₁₂ = ?0.86·10^?2m⁴/C², and Q₄₄ = 0.85·10^?2m⁴/C².     

Effect of pressure onTc in La2-xBaxCuO4 withx=0.125

The superconducting transition temperature,T _c , of La_2–x Ba _x CuO₄ has been measured under high pressure up to 8 GPa.T _c is found to change drastically at the pressure where the structural phase transition takes place. This finding clearly indicates that there exists an intimate relation between the crystal structure and superconductivity.