All-chemically deposited Bi2S3/PbS solar cells

We report on solar cells with a cross-sectional layout: TCO/window/Bi₂S₃/PbS, in which a commercial SnO₂ transparent conductive oxide (TCO-PPG Sungate 500); chemically deposited window layers of CdS, ZnS or their oxides; n-type Bi₂S₃ (100 nm) and p-type PbS (360-550 nm) absorber films constitute the cell structures. The crystalline structure, optical, and electrical properties of the constituent films are presented. The open circuit voltage (V_oc) and short-circuit current density (J_sc), for 1000 W/m² solar radiation, of these solar cells depend on the window layers, and vary in the range, 130-310 mV and 0.5-5 mA/cm², respectively. The typical fill factors (FF) of these cells are 0.25-0.42, and conversion efficiency, 0.1-0.4%.     

Multiferroic properties of BiFeO3/Bi4Ti3O12 double-layered thin films fabricated by chemical solution deposition

Multiferroic BiFeO₃/Bi₄Ti₃O₁₂ (BFO/BTO) double-layered film was fabricated on a Pt(111)/Ti/SiO₂/Si(100) substrate by a chemical solution deposition method. The effect of an interfacial BTO layer on electrical and magnetic properties of BFO was investigated by comparing those of pure BFO and BTO films prepared by the same condition. The X-ray diffraction result showed that no additional phase was formed in the double-layered film, except BFO and BTO phases. The remnant polarization (2P_r) of the double-layered film capacitor was 100 μC/cm² at 250 kV/cm, which is much larger than that of the pure BFO film capacitor. The magnetization-magnetic field hysteresis loop revealed weak ferromagnetic response with remnant magnetization (2M_r) of 0.4 kA/m. The values of dielectric constant and dielectric loss of the double-layered film capacitor were 240 and 0.03 at 100 kHz, respectively. Leakage current density measured from the double-layered film capacitor was 6.1 × 10^− 7 A/cm² at 50 kV/cm, which is lower than the pure BFO and BTO film capacitors.     

Photoelectrochemical properties of thin Bi2WO6 films

Thin Bi₂WO₆ film prepared from an amorphous heteronuclear complex via dip-coating method is investigated as a visible light-driven photoelectrode material. Photoelectrochemical properties of the resultant film are investigated on the basis of linear sweep voltammetry and current-time curves, and conduction and valence band edges of the film electrode are determined from the photocurrent voltage response. Anodic photocurrent associated with the oxidation of water is obtained under visible light irradiation. Furthermore, the film as a photoanode can degrade rhodamine B (RhB) and methylene blue (MB) in aqueous solution under visible light irradiation slowly. The application of bias potential further improves the photodegradation efficiency of RhB and MB. Based on the analytic result of current-time curve, the stability of the film electrode is confirmed.     

A very simple and low cost route to Bi2S3 nanorods bundles and dandelion-like nanostructures

Bi₂S₃ nanorods bundles as well as three-dimensional dandelion-like nanostructures were synthesized in high yield at lower temperature (room temperature or ambient temperature of 15 °C) in a very simple system composed only of Bi(NO₃)₃, thioacetamide (TAA), hydrochloride acid and distilled water. It is the first report to obtain such nanostructures at such a low temperature and by such a simple method, and the reaction does not demand any additional energy such as heating or agitation. A splitting crystal growth and self-assemble mechanism should be responsible for the formation of these structures. This kind of novel Bi₂S₃ nanostructures may find potential applications in hydrogen storage, high-energy batteries, as well as luminescence and catalysis fields.     

Pyrite (FeS2) thin films deposited by sol-gel method

Nanocrystalline pyrite (FeS₂) films were achieved by the sol-gel dip-coating process and sulfurization treatment. The microstructural, optical and electrical characteristics were investigated and the effect of sulfurization time on film properties was discussed. The XRD spectra show that FeS₂ film can be obtained for 1 h sulfurization and no other phase appears. The morphology of the precursor Fe₂O₃ films shows a porous and loose structure. However, with the sulfurization time increasing, the precursor films completely transformed into the pyrite films which have a compact and smooth structure. The pyrite films with a different sulfurization time have the optical absorption edges changed in the range of 0.90-0.99 eV. With the increase of sulfurization time, the carrier concentration increases and the carrier mobility decreases. It is speculated that crystallographic defects in the films could play an important role in film properties.     

In situ fabrication of Bi2S3 nanocrystal film for photovoltaic devices

A facile wet-chemical method to prepare Bi₂S₃ thin films with flake nanostructures directly on ITO glass substrate is presented in this paper for the first time. The product was characterized by X-ray powder diffractometer (XRD), Raman spectrometer, scanning electron microscope (SEM), and atomic force microscope (AFM). The one-step solvothermal elements treatment on the ITO substrate spare time to form film by spin-coating process and the film could be tightly attached to the ITO electrode. A conjugated polymer, poly 3-hexylthiophene (P3HT), was then spin-coated on the as-prepared Bi₂S₃ film to form an inorganic-organic hybrid thin film. The photovoltaic performance of the resulting solar cell device was also investigated.     

Spectroscopic properties of red Bi4Ge3O12 by vertical Bridgman method

Red Bi₄Ge₃O₁₂ (BGO) single crystals had been grown by vertical Bridgman (VB) method. The structure of this crystal was determined by XRD. The absorption and emission spectra of the red BGO in visible and near infrared region (NIR) were measured at room temperature. The emission intensity of the red BGO is weaker than that of ordinary BGO at about 500 nm. Interestingly, the red BGO shows a significant emission band centered at about 1495 nm. The red BGO faded and its properties recovered after ultraviolet (UV) irradiation or annealing.     

Rare-earth substituted HfO2 thin films grown by metalorganic chemical vapor deposition

Thin films of HfGdO_x and HfDyO_x were deposited by metalorganic chemical vapor deposition (MOCVD) utilizing guanidinate precursors for Hf, Gd and Dy. The close match in the thermal properties of the precursors enabled the MOCVD of rare-earth (RE) substituted HfO₂ over a wide temperature window. Film deposition was carried out in the temperature range 300-700 °C in the presence of oxygen on Si(100) substrates. HfGdO_x films were analyzed in detail for their structure, composition and morphology using X-ray diffraction, Rutherford backscattering spectrometry, proton induced X-ray emission, X-ray photoelectron spectroscopy and scanning electron microscopy. The electrical properties of HfGdO_x in terms of capacitance-voltage and current-voltage characteristics of metal-insulator-semiconductor device structures were evaluated.     

The reaction mechanism of the spray Ion Layer Gas Reaction process to deposit In2S3 thin films

The spray Ion Layer Gas Reaction (ILGAR) is a well-established, patented and commercial process used primarily to deposit In₂S₃ as buffer layers in thin film solar cells. In this paper we investigate the growth mechanism of the spray In₂S₃ ILGAR process by characterising the intermediate growth stages of films, following the growth mechanism with a quartz crystal microbalance and tracking the gaseous side-and-intermediate products during film growth, using a mass spectrometer. A basic growth mechanism model is then proposed based on an aerosol assisted chemical vapour deposition of an In(O_x,Cl_y,(OH)_z) film, as the first stage process, followed by the conversion of the intermediate film using H₂S gas to In₂S₃.     

Variations of microstructures and electrical properties of Bi4Ti3O12/SrTiO3/(La0.5, Sr0.5)CoO3/MgO epitaxial thin films by annealing

Epitaxial thin films of a heterostructure with Bi₄Ti₃O₁₂(BIT)/SrTiO₃(ST) were successfully grown with a bottom electrode consisting of La_0.5Sr_0.5CoO₃(LSCO) on MgO(001) substrates using pulsed laser deposition. The grown BIT and ST (001) planes were parallel to the growth surface with the orientation relationship of BIT <110>//ST <010>. In the as-deposited film, the BIT (001) plane appeared to expand to relieve a lattice mismatch with the ST (001) plane. However, annealing for 20-40 min induced the BIT (001) plane to contract horizontally with its c-axis expanding, which was associated with a local perturbation in the layer stacking of the BIT structure. This structural distortion was reduced in the film annealed for 1 h, with restoration of the periodicity of the layer stacking. Correspondingly, the dielectric constant of the as-deposited film was increased from 292 to 411 by annealing for 1 h. In parallel, the film was paraelectric but became more ferroelectric, with the remanent polarization and the coercive field changing from 0.1 μC/cm² and 14 kV/cm to 1.7 μC/cm² and 69 kV/cm, respectively.     

Lead-free piezoelectric thin films of Mn-doped NaNbO3-BaTiO3 fabricated by chemical solution deposition

Lead-free piezoelectric thin films of NaNbO₃-BaTiO₃ were fabricated on Pt/TiO_x/SiO₂/Si substrates by chemical solution deposition. Perovskite NaNbO₃-BaTiO₃ single-phase thin films with improved leakage-current and ferroelectric properties were prepared at 650 °C by doping with a small amount of Mn. The 1.0 and 3.0 mol% Mn-doped 0.95NaNbO₃-0.05BaTiO₃ thin films showed slim ferroelectric P-E hysteresis and field-induced strain loops at room temperature. The 1.0 and 3.0 mol% Mn-doped 0.95NaNbO₃-0.05BaTiO₃ films showed remanent polarization values of 6.3 and 6.2 μC/cm², and coercive field of 41 and 55 kV/cm, respectively. From the slope of the field-induced strain loop, the effective piezoelectric coefficient (d₃₃) was found to be 40-60 pm/V.     

Growth of crystalline HgCr2S4 thin films at mild reaction conditions

Thin films of crystalline HgCr₂S₄ have been deposited on glass substrates at low temperature as low as 65 °C using a chemical bath deposition method. Typical thickness of the deposited HgCr₂S₄ thin films was 264 nm.The films were composed of closely packed irregular grains of 165-175 nm in diameter. The X-ray diffraction analysis and the selected area electron diffraction analysis revealed the deposited thin films were polycrystalline with highly (2 2 0) preferential orientation. The films exhibit a pure faint black. Their direct band gap energy was 2.39 eV with room temperature electrical resistivity of the order of 10⁻³ Ω cm.     

Spray pyrolyzed β-In2S3 thin films: Effect of postdeposition annealing

Indium sulfide thin films prepared using spray pyrolysis, with In/S ratio 2/3 in the solution, were annealed in vacuum at 300 and 400 °C. The effect of this treatment on properties of the films was studied using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, optical absorption, transmission and electrical measurements. Optical constants of the films were calculated using the envelope method. Annealing did not affect the optical properties of the film much, but the resistivity of the films showed a drastic decrease and the grain size increased. In₂S₃ thin films have potential use as buffer layer in photovoltaic heterojunction devices.     

Optical and structural properties of CuSbS2 thin films grown by thermal evaporation method

Structural, optical and electrical properties of CuSbS₂ thin films grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The CuSbS₂ thin films were carried out at substrate temperatures in the temperature range 100-200 °C. The structure and composition were characterized by XRD, SEM and EDX. X-ray diffraction revealed that the films are (111) oriented upon substrate temperature 170 °C and amorphous for the substrate temperatures below 170 °C. No secondary phases are observed for all the films. The optical absorption coefficients and band gaps of the films were estimated by optical transmission and reflection measurements at room temperature. Strong absorption coefficients in the range 10⁵-10⁶ cm^− 1 at 500 nm were found. The direct gaps Eg lie between 0.91-1.89 eV range. It is observed that there is a decrease in optical band gap Eg with increasing the substrate temperature. Resistivity of 0.03-0.96 Ω cm, in dependence on substrate temperature was characterized. The all unheated films exhibit p-type conductivity. The characteristics reported here also offer perspective for CuSbS₂ as an absorber material in solar cells applications.     

AC conductivity and dielectric properties of Sb2Te3 thin films

Sb₂Te₃ films of different thicknesses, in the thickness range 300-620 nm, were prepared by thermal evaporation. X-ray analysis showed that the as-deposited Sb₂Te₃ films are amorphous while the source powder and annealed films showed a polycrystalline nature. The AC conductivity and dielectric properties of Sb₂Te₃ films have been investigated in the frequency range 0.4-100 kHz and temperature range 303-373 K. The AC conductivity σ_AC(ω) was found to obey the power law ω^s where s?1 independent of film thickness. The temperature dependence of both AC conductivity and the exponent s can be reasonably well interpreted by the correlated barrier hopping (CBH) model. The experimental results of the dielectric constant ε₁ and the dielectric loss ε₂ are frequency and temperature dependent and thickness independent. The maximum barrier height W_M calculated from dielectric measurements according to the Guintini equation agrees with that proposed by the theory of hopping of charge carriers over a potential barrier as suggested by Elliott for chalcogenide glasses. The effect of annealing at different temperatures on the AC conductivity and dielectric properties was also investigated. Values of σ_AC, ε₁ and ε₂ were found to increase with annealing treatment due to the increase of the degree of ordering of the investigated films. The Cole-Cole plots for the as-deposited and annealed Sb₂Te₃ films have been used to determined the molecular relaxation time τ. The temperature dependence of τ indicates a thermally activated process.     

Structure and optical properties of nanocrystalline BiFeO3 films prepared by chemical solution deposition

Bismuth ferric oxide (BiFeO₃) films grown on quartz substrate were prepared by a simple chemical solution deposition. Phase constitution characterization of the films were obtained by X-ray diffraction, surface morphology and transmittance of the films were studied by atomic force microscopy and ultraviolet-visible-infrared light spectrophotometer. The optical constants (refractive index n, extinction coefficient k) were calculated by straightforward method proposed by Swanepoel [Swanepoel R, J. Phys., E J. Sci. Instrum. 1983; 16: 1214-1222. [1]]. The influence of the processing parameters on microstructure and optical properties, especially band gap, were studied.     

Dependence of Zr content on electrical properties of Bi3.15Nd0.85Ti3-xZrxO12 thin films synthesized by chemical solution deposition (CSD)

The Bi_3.15Nd_0.85Ti_3-xZr_xO₁₂ (BNTZ) thin films with Zr content (x = 0, 0.05, 0. 1, 0.15, and 0.2) were prepared on Pt/Ti/SiO₂/Si (100) substrates by chemical solution deposition (CSD) technique. The crystal structures of BNTZ films were analyzed by X-ray diffraction (XRD). The effects of Zr contents on the ferroelectric, dielectric properties, and leakage current of BNTZ films were thoroughly investigated. The XRD results demonstrated that all the films possessed a single phase bismuth-layered structure and exhibited the highly preferred (117) orientation. Among these films, the film with Zr content x = 0.1 held the maximum remanent polarization (2P_r) of 50.21 μC/cm² and a low coercive field (2E_c) of 210 kV/cm.     

Effect of post-annealing treatment in oxygen on dielectric properties of K0.5Na0.5NbO3 thin films prepared by chemical solution deposition

K_0.5Na_0.5NbO₃ thin films were prepared on Pt/Ti/SiO₂/Si substrates by chemical solution deposition method with different annealing temperatures of 550 °C, 600 °C, 700 °C. The post-annealing treatment was introduced at 550 °C for 3 min in oxygen ambient. It is found that the films were composed of pure provskite phase, and the post-annealing treatment promoted the crystallization and improved the quality of the films, which resulted in the enhancement of the dielectric property of the films. The effect of the post-annealing on the dielectric properties of the films was also discussed.     

Growth and structure characterization of epitaxial Bi2Sr2Co2Oy thermoelectric thin films on LaAlO3 (001)

Epitaxial Bi₂Sr₂Co₂O_y thin films with excellent c-axis and ab-plane alignments have been grown on (001) LaAlO₃ substrates by chemical solution deposition using metal acetates as starting materials. Microstructure studies show that the resulting Bi₂Sr₂Co₂O_y films have a well-ordered layer structure with a flat and clear interface with the substrate. Scanning electron microscopy of the films reveals a step-terrace surface structure without any microcracks and pores. At room temperature, the epitaxial Bi₂Sr₂Co₂O_y films exhibit a resistivity of about 2 mΩ cm and a seebeck coefficient of about 115 μV/K comparable to those of single crystals.     

Ferroelectric Bi3.25La0.75Ti3O12 thin films on a conductive Sr4Ru2O9 electrode obtained by pulsed laser deposition

Strontium ruthenate and Bi_3.25La_0.75Ti₃O₁₂ (BLT) layers were grown on Si(100) substrate using pulsed laser deposition technique. Starting from a Sr₂RuO₄ target, we obtained single phase films composed of Sr₄Ru₂O₉; on these strontium ruthenate electrodes, textured and non-textured BLT were grown at 700 °C. Structural characterizations of these double layers were done by X-ray diffraction, scanning electron microscopy, normal and high-resolution transmission electron microscopy. The Van der Pauw's resistivity measurements indicate that Sr₄Ru₂O₉ can be used as a back electrode. The temperature dependence of the resistivity at low temperatures is , which corresponds to a variable-range hopping mechanism.