ReS2薄膜的超快载流子动力学和太赫兹发射研究

基于超快时间分辨光谱实验手段,研究了化学气相沉积（chemical vapor deposition,CVD）生长的ReS_2薄膜的超快载流子动力学和太赫兹发射。分别利用光泵浦探测和光泵浦太赫兹发射两套系统对ReS_2薄膜进行了测试,结果表明：ReS_2薄膜具有超快的载流子热化过程和亚纳秒量级的复合过程;在飞秒激光泵浦下能够产生频谱宽度为2.5 THz的太赫兹辐射。通过分析太赫兹辐射随泵浦光入射角改变而出现极性相反的现象,得出ReS_2薄膜产生太赫兹辐射的主要机制为表面场效应。研究结果不仅有助于理解ReS_2薄膜对超快激光脉冲的瞬态响应,而且为太赫兹光子器件（如太赫兹发射器等）的研究设计提供了重要参考。     

钨镍共掺杂V2O5薄膜的光电特性研究

利用溶胶–凝胶旋涂法和后退火工艺在FTO导电玻璃上制备了钨镍共掺杂V₂O₅薄膜,研究了薄膜在不同温度和不同偏压下的光电特性和相变特性。利用X射线衍射仪（XRD）、扫描电子显微镜（SEM） 和X射线光电子能谱仪（XPS） 测试了钨镍共掺杂V₂O₅薄膜的晶体结构、表面形貌和组分,分析了不同钨镍共掺杂浓度对V₂O₅薄膜相变光电特性的影响。结果表明,当钨和镍的掺杂质量分数分别为3 %和1.5 %时,钨镍共掺杂的V₂O₅薄膜的相变温度为218.5 ℃,在可见光范围内有较高的透过率,在近红外1310 nm波长处的光学透过率达48.83%,与未掺杂V₂O₅薄膜的光学透过率相比提高了10.29%,薄膜电阻降低了30.53%,热致回线宽度收窄为15 ℃,说明钨镍共掺杂的V₂O₅薄膜具有良好的可逆相变光电特性,有望在新型光电器件领域得到较好的应用。     

基于渡越-切伦科夫辐射原理太赫兹横向场频率特性的实验研究

基于渡越-切伦科夫辐射原理,单色飞秒激光脉冲聚焦到空气中形成等离子体进而辐射出径向偏振太赫兹波,径向偏振太赫兹波经过紧聚焦后在焦点处产生太赫兹波横向偏振分量。为了有效调控太赫兹横向分量的频率分布和振幅特性,首先,通过理论分析太赫兹横向场分量在外加电压下的分布规律,给出不同角度的外加电压对太赫兹横向场频率强度的影响。然后,采用对等离子体施加外部电场的方法,得到一个最佳的纵向电场角度产生高强度太赫兹横向偏振分量。对发展太赫兹波特性的基础研究以及太赫兹技术的应用具有重要的参考意义。     

快速轴流型与密封型CO2激光器超脉冲特性研究

快速轴流型CO₂激光器和密封型CO₂激光器超脉冲运转时,能够获得前沿迅速上升、脉宽窄、峰值功率高的激光脉冲输出,在激光加工和激光医疗等领域有重要应用价值。本文从理论和实验两个方面对快速轴流型与密封型CO₂激光器超脉冲特性进行了研究,设计并研制了适合CO₂激光器超脉冲运转的控制电源,在国内首次实现了快速轴流型与密封型CO₂激光器的超脉冲运转。     

单价银离子在 CaO-P2O5 系统玻璃中的发光特性

在弱还原气氛下制备了单价银离子(Ag⁺)掺杂的CaO-P₂O₅系统玻璃,测试了其在室温下的吸收光谱、激发光谱和发射光谱。Ag⁺-CaO-P₂O₅玻璃的吸收光谱表明两个吸收峰。高能峰位于220nm波长,由4d¹⁰→4d⁹5P¹跃迁引起,低能峰中心位于240nm波长,归因于4d¹⁰→4d⁹5s¹跃迁,该吸收与其发射特性有关。紫外波段的宽带吸收产生了可见波段强烈的荧光发射,发光峰位于440nm波长,半宽度为130nm.研究了掺质浓度与发光特性的关系,随着掺质浓度的增加(0.05～0.25mol%),发光峰向较长波段移动。在Ag₂O含量为0.5mol%时,出现了浓度猝灭现象。为了比较起见,同时还研制了Cu⁺-CaO-P₂O₅及Cu⁺-Ag⁺-CaO-P₂O₅玻璃。     

太赫兹波的古依相移研究

为了测量太赫兹波聚焦点附近不同位置的太赫兹时域信号图对飞秒脉冲强激光在空气中进行聚焦,在形成空气等离子体细丝通道的同时辐射出锥型太赫兹波,并用离轴抛物面金镜收集和聚焦太赫兹波。利用电光采样系统来探测太赫兹波,得到其频谱宽度约为4THz。通过对比分析得出,会聚的太赫兹波同样具有古依相移效应。     

CsPbBr3纳米片–萘之间的高效三线态能量传递

铯铅卤化物钙钛矿纳米晶是光伏和发光应用领域中理想化的三线态敏化材料,具有较高的荧光量子产率和量子限域效应。以三层厚度的CsPbBr₃纳米片（NPLs）为三线态给体,实现了从NPLs到1-萘甲酸（NCA）分子的高效三线态能量传递（TET）。CsPbBr₃ NPLs采用配体辅助再沉淀方法制备,其与NCA分子结合后,稳态荧光被大幅淬灭,荧光寿命从复合前的6.743 ns缩短到0.995 ns,TET效率达到85.3%。通过与大尺寸纳米立方体对比发现,对于CsPbBr₃-多环芳烃复合体系,量子限域效应是获得高效TET的关键。研究结果表明,CsPbBr₃ NPLs作为三线态敏化剂,可应用在基于TET的光子上转换、光催化氧化-还原反应和室温磷光等领域。     

量子阱二极管泵浦的Nd:YVO4/Cr:YAG高重复率被动调Q激光器

量子阱二极管端面泵浦的Nd:YVO₄激光器中,采用Cr:YAG作为可饱和吸收体,获得了1.06μm的高重复率被动调Q脉冲激光输出.在吸收泵浦功率528.3mW时,输出脉冲能量0.19μJ,宽度32ns,脉冲重复率达158.7kHz.     

基于Ge2Sb2Se4Te1的可重构光开关的仿真

光开关是集成光路上一个重要的元器件。提出了一种用在L和C波段基于硫系相变材料（Ge₂Sb₂Se₄Te₁）的片上2×2定向耦合器式的可重构光开关,可通过改变相态切换开关。利用仿真软件Lumerical中的Mode Solutions和FDTD Solutions模块设计器件,得到在1500~1625 nm内耦合长度为24.9 μm的Ge₂Sb₂Se₄Te₁非晶态下插入损耗（IL）>-0.36 dB,串口对比度（CT）<-24 dB;Ge₂Sb₂Se₄Te₁晶态下IL>-0.44 dB,CT<-30.46 dB。利用仿真软件COMSOL模拟532 nm波长激光加热Ge₂Sb₂Se₄Te₁,结果显示：一个25 ns、峰值功率45 mW的高斯短脉冲可以使材料由晶态转化为非晶态;施加多个峰值功率20 mW、周期1 μs且占空比0.03%的高斯脉冲阵列可重回晶态。仿真结果表明,设计的光开关在通信波段通过激光加热可以快速实现切换光路的作用。     

双色激光产生太赫兹辐射的调控机理研究

采用双色激光在气体介质中诱导产生太赫兹波的数值模拟方法,深入分析了各种激光参数对双色激光场产生太赫兹波的影响,目的是优化参数以实现太赫兹波辐射能量的最大化。模拟计算表明,双色激光的波长、相对相位、激光脉冲宽度等对瞬态电流和太赫兹能量都有调控作用,并且具有不同的规律性。此外,还通过分析激光电场、电子密度、光电流等相关因素,对双色激光场产生太赫兹波的物理机理进行了解释。该研究为在不同激光激发条件下提高太赫兹波辐射强度,提供了详尽的参数优化分析和理论支持,对后续大幅增强太赫兹辐射效率具有重要意义。     

Generation, transport, and detection of linear accelerator based femtosecond-terahertz pulses

The generation and detection of intense terahertz (THz) radiation has drawn a great attention recently. The dramatically enhanced energy and peak electric field of the coherent THz radiation can be generated by coherent superposition of radiated fields emitted by ultrafast electron bunches. The femtosecond (fs)-THz beamline construction at the Pohang Accelerator Laboratory (PAL) was completed in the end of 2009. The fs-THz beamline at PAL can supply ultrafast and intense fs-THz radiation from a 75 MeV linear accelerator. The radiation is expected to have frequency up to 3 THz (～100 cm(-1)) and the pulse width of <200 fs with pulse energy up to 10 μJ. This intense THz source has great potential for applications in nonlinear optical phenomena and fields such as material science, biomedical science, chemistry, and physics, etc.     

Small-size terahertz spectrometer using the second harmonic of a femtosecond fiber laser

Possible implementations of a small-size terahertz spectrometer with a subpicosecond resolution on the basis of a femtosecond fiber laser are considered. An experimental sample of a spectrometer is fabricated. This spectrometer employs the method of optical rectification in a ZnTe nonlinear crystal and the Dember (photodiffusion) effect on the InAs semiconductor surface to generate terahertz radiation and the polarization-optical method to detect radiation. System operation is demonstrated by an example of measuring the terahertz absorption spectrum of water and determining the refractive index of the β-BBO crystal. The basic spectrometer parameters are found: spectral range, spectral resolution, and dynamic range of the terahertz spectrum amplitude.     

Efficiency of generation of terahertz radiation in GaAs,InAs, and InSb crystals

Pulsed generation of terahertz radiation in GaAs, InAs, and InSb semiconductors under the action of femtosecond laser radiation at the wavelength of 775 nm is studied. The generation efficiency is shown to increase by a factor of 2.7 if InAs is placed into a magnetic field of 0.8 T. An increase in the generation efficiency by the mechanism of optical rectification in InAs samples with the 〈111〉 orientation is demonstrated.     

Terahertz microlens array emitter based on the transverse Dember cross effect

A new method for generating terahertz radiation by exposure to femtosecond laser pulses on the semiconductor surface is proposed. The essence of this method is that the exciting radiation intensity is subjected to spatial modulation by using a microlens array and by shading a part of the semiconductor surface by metal stripes. This gives rise to a concentration gradient of photo carriers along the surface at the sharp boundary of the metallic coating in the semiconductor (transverse Dember photoelectric effect), and its relaxation for times of ～1 ps results in the emission of electromagnetic pulses of the terahertz range. A terahertz emitter model based on the proposed method was developed and designed, its efficiency was demonstrated, and methods for increasing its efficiency were considered.     

Two-photon excited lifetime imaging of autofluorescence in cells during UV A and NIR photostress

By monitoring coenzyme autofluorescence modifications. as an indicator of cell damage. the cellular response to femtosecond near-infrared (NIR) radiation (two-photon absorption) was compared with exposure to low-power UV A radiation (one-photon absorption). Excitation radiation from a tunable Ti-sapphire laser. focused through highnumerical- aperture microscope optics. provided diffractionlimited mlcrobeams of an adjustable peak power. Laser scanning NIR microscopy was used to detect spatially the intracellular distribution of fluorescent coenzymes by fluorescence intensity imaging as well as fluorescence lifetime imaging (_T-mapping). Upon the onset of UV or NIR exposure. Chinese hamster ovary cells exhibited blue/green autofluorescence witq a mean lifetime of 2·2 ns. which was attributed to NAD(P)H in mitochondria. Exposure to 365 nm radiation from a high-pressure mercury lamp (1 m W. 300 J cm^-2 ) resulted in oxidative stress correlated with increased autofluorescence intensity. onset of nuclear fluorescence. and a fluorescence lifetime decrease. The cellular response to femtosecond NIR micro beams depended significantly on peak power. Peak powers above a threshold value of about 0·5kW (average power: 6mW). 0·55kW (7mW) and 0·8kW (lOmW) at 730nm. 760nm and 800nm. respectively. resulted in the onset of short-lived luminescence with higher intensity (100x) than the intracellular NAD(P)H fluorescence. This luminescence. accompanied by destruction of cellular morphology. was localized and occurred in the mitochondrial region. In contrast. beams at a power of less than 0·5 kW allowed nondestructive fluorophore detection with high spatial and temporal resolution without modification of cellular redox state or cell morphology.     

Femtosecond time-resolved photoelectron spectroscopy with a vacuum-ultraviolet photon source based on laser high-order harmonic generation

A laser-based tabletop approach to femtosecond time-resolved photoelectron spectroscopy with photons in the vacuum-ultraviolet (VUV) energy range is described. The femtosecond VUV pulses are produced by high-order harmonic generation (HHG) of an amplified femtosecond Ti:sapphire laser system. Two generations of the same setup and results from photoelectron spectroscopy in the gas phase are discussed. In both generations, a toroidal grating monochromator was used to select one harmonic in the photon energy range of 20-30 eV. The first generation of the setup was used to perform photoelectron spectroscopy in the gas phase to determine the bandwidth of the source. We find that our HHG source has a bandwidth of 140 ± 40 meV. The second and current generation is optimized for femtosecond pump-probe photoelectron spectroscopy with high flux and a small spot size at the sample of the femtosecond probe pulses. The VUV radiation is focused into the interaction region with a toroidal mirror to a spot smaller than 100 × 100 μm(2) and the flux amounts to 10(10) photons/s at the sample at a repetition rate of 1 kHz. The duration of the monochromatized VUV pulses is determined to be 120 fs resulting in an overall pump-probe time resolution of 135 ± 5 fs. We show how this setup can be used to map the transient valence electronic structure in molecular dissociation.     

Femtosecond kinetics of reflection of mirrors with saturable absorption

The kinetics of mirrors with saturable absorption is investigated by a pump-probe singlefrequency technique in reflection of femtosecond pulse radiation with the central wavelength of 1040 nm. The double modulation method with probe radiation detection at the summary frequency allows suppressing the scattered pump radiation contribution and reaching the reflection change sensitivity at a level of 10^?5. The kinetics of recovery of the linear reflectivity of the mirror including resonant quantum wells with nanostructured barriers is studied for the surface density of photons in pump pulses of (0.3–5.8) · 10¹⁴ cm^?2. The time of electron-hole recombination (7.8 ps) is found to be appreciably shorter than in samples with quantum wells separated by thick barriers; the time of ionization of excitons localized in quantum wells (0.2–0.4 ps) increases with the pump intensity.     

单层MoS2和WS2的太赫兹近场显微成像研究

采用太赫兹散射式扫描近场光学显微镜(THz s-SNOM)研究了化学气相沉积法制备的单层MoS₂和WS₂晶粒的太赫兹近场响应。在没有可见光激发时,未探测到可分辨的太赫兹近场响应,说明晶粒具有较低的掺杂载流子浓度。有可见光激发时,由于光生载流子的太赫兹近场响应,能够测得与晶粒轮廓完全吻合的太赫兹近场显微图。在相同的光激发条件下,MoS₂的太赫兹近场响应强于WS₂,反映了两者之间载流子浓度或迁移率的差异。研究结果表明,THz s-SNOM兼具超高的空间分辨率和对光生载流子的灵敏探测能力,对二维半导体材料和器件光电特性的微观机理研究具有独特的优势。     

Rising the signal-to-noise ratio in X-ray spectra of femtosecond laser-produced plasmas using the “mean-median” algorithm

As femtosecond laser pulses increase in intensity and decrease in duration, interaction between the focused laser radiation and a substance is followed by a sharp increase in the intensity of fast-electron, ion, and electromagnetic noise generation. In turn, the noise signals of X-ray detectors grow in amplitude and the signal-to-noise ratio in recording X-ray spectra of multiply charged ions approaches unity. A significant excess of the noise level over the useful signal is observed in plasmas generated by laser pulses with a power density of ≥10¹⁷ W/cm². The most powerful effect of the above factors is exerted on X-ray spectra recorded by such electromagnetic equipment as CCD-based detectors, photoelectron amplifiers, etc. A new “mean-median” algorithm is described, with which it is possible to considerably increase the signal-to-noise ratio of CCD detectors used to measure X-ray spectra of femtosecond laser-produced plasma.