基于有限元方法的波导管结构电磁屏蔽屏蔽效能分析

提出一种在屏蔽箱体孔缝结构的外部增加截止波导管结构的方法,利用截止波导管对高频电磁波的衰减作用来提高屏蔽箱体屏蔽效能。基于有限元法分别对截止波导管的长度、厚度及其形状进行仿真,仿真结果表明:在0.1 GHz~1 GHz频率范围内,随着截止波导管长度及厚度的增加屏蔽箱体屏蔽效能提高15d B以上,圆形和矩形截止波导管对屏蔽效能影响不大。根据实际情况合理选择截止波导管的长度及厚度可以提高微弱信号处理电路的电磁抗干扰能力。     

带孔缝矩形金属腔体屏蔽效能研究

针对带孔缝矩形金属腔体在电磁辐射下的屏蔽效能问题,利用基于时域有限积分法的电磁仿真软件CST,建立了平面波辐照条件下含孔缝金属腔体的耦合模型,重点研究了电场极化方向,腔体材料,矩形孔缝的长度、宽度和深度,孔缝填充介质介电常数及其厚度等参数对屏蔽效能的影响规律.研究结果表明:典型金属材料对屏蔽效能的影响差别不大,垂直于电场极化方向的孔缝边长更能影响腔体的屏蔽效能,孔缝尺寸会影响矩形金属腔体的谐振点,孔缝深度能够通过衰减入射波在一定程度上影响屏蔽效能,孔缝填充介质会降低屏蔽效能,介质厚度及其介电常数会影响屏蔽效能峰值点.研究结果对金属腔体的电磁兼容设计有一定的指导意义.     

弹体内置矩形腔屏蔽效能分析

为提高导弹强电磁脉冲防护能力,采用有限积分法对弹体内置矩形腔体的屏蔽效能 进行了数值模拟。重点分析了双层嵌套腔体屏蔽效能与单层腔体屏蔽效能之间的关系, 以及末制导雷达天线转动对壳体屏蔽效能的影响。结果表明：双层嵌套在L频段可提高屏蔽 效能3 0 dB左右,但在S频段嵌套腔体与内层腔体的屏蔽效能相当;当外层腔体与内层腔体上孔缝 共 振频率相近时,嵌套腔体屏蔽效能会急剧恶化;天线转动对屏蔽效能的影响与入射波频段相 关。该研究对提高导弹电磁防护能力具有指导意义。     

基于HFSS的有孔屏蔽体的屏蔽效能分析

为了解腔体结构和孔缝对屏蔽效能的影响,寻找提高屏蔽效能的方法,在建立单层腔体的物理模型的基础上对单腔做了改进,建立孔阵和带有分仓的矩形腔体模型,使用有限元仿真软件HFSS对屏蔽效能进行仿真和分析。结果表明:分仓可以使腔体内仓的屏蔽效能提高,但对外仓的屏蔽效能影响不大,而且分仓会使主谐频率发生偏移;在保持孔缝面积不变的情况下,孔阵的屏蔽效能比单腔要好,而且缝隙长宽比越小,屏蔽效能越好。     

双层加载电路板屏蔽腔屏蔽效能研究

为了提高设备中电子元件抵御来自外界和内部其他元件的电磁干扰,根据传输线理论,将双层加载电路板屏蔽腔体模型转换为电路图,利用电路图推导出腔体中心屏蔽效能的等效公式。利用Matlab生成传输线法屏蔽效能曲线,并通过仿真软件CST建模仿真,仿真结果与Matlab输出曲线良好吻合,验证了公式的正确性。运用CST研究了一些因素如电路板大小、数量、放置方式以及距孔缝的距离对屏蔽效能的影响。为了更加贴合实际,采用加载集成运算放大电路的印制电路板来研究腔体屏蔽效能以及腔体对电路板功能的影响,最后提出了一些提高屏蔽效能的方法。     

复杂矩形腔屏蔽效能分析

提高武器系统和设备对电磁脉冲的防护能力意义重大,而屏蔽技术则是防护电磁干扰的主要手段。介绍了屏蔽原理,建立了双层和带有分仓的孔缝矩形屏蔽腔的物理模型,使用有限元软件仿真计算了其屏蔽效能和腔体的谐振频率。结果表明:与单层屏蔽腔相比,双层屏蔽腔有着更高的屏蔽效能;分仓可以提高其内部空间的屏蔽效能。这对屏蔽体的设计和提高设备对电磁脉冲的防护能力具有一定的理论价值和实际意义。     

适用于5G电磁屏蔽的介质开孔型频率选择表面设计

5G通信技术的迅速发展和产业化进程给电子设备的电磁屏蔽设计带来了严峻挑战。5G通信中24 GHz以上的电磁波极易通过电子设备屏蔽外壳上的各种孔缝耦合进入电子设备内部,影响设备的正常工作。针对常规散热孔设计难于适应5G通信发展需求,提出了一种介质开孔型频率选择表面(FSS)结构。该结构在不影响设备通风散热的条件下,实现对28 GHz频段信号的电磁屏蔽。经过全波分析方法仿真,所设计的FSS结构在28 GHz频段电磁屏蔽效能(SE)达30 dB以上,带宽大于2 GHz。无论是TE还是TM极化电磁波,在0°~60°入射范围内具有良好的电磁屏蔽稳定性。     

装有PCB有孔矩形腔屏蔽效能的传输线法分析

为了提高对有孔屏蔽腔内电路的有效保护性能.介绍了用传输线法分析有孔矩形腔屏蔽效能的基本原理.将基本公式作进一步修正,使其能计算矩形腔内装有印刷电路板的情形.并对修正的传输线模型计算公式进行了扩展,使之能计算任意极化方向时的情况.计算结果表明:当频率低于主谐振频率时,测量点离孔缝越近,耦合进腔体的电磁能量越多;屏蔽效能随极化角度的递增而增加;低频段的屏蔽效能比高频段的要好;装有电路板腔体的屏蔽效能比空腔的要好,这在谐振区域内尤为突出;电路板尺寸越大屏蔽效能越好.根据计算结果,提出了设计屏蔽腔及其腔内电子设备的建议.     

双面含孔金属腔体屏蔽效能的快速计算

为研究双面含孔矩形金属腔体的屏蔽效能问题,运用矢量分解和等效传输线相结合的原理,给出了双面含单孔的矩形金属腔体内部中心点屏蔽效能计算方法,通过与电磁数值软件CST 的计算结果对比,验证了该计算方法的有效性,且耗时少、收敛快,运用该方法进一步研究了双面含孔阵矩形金属腔体屏蔽效能,得到了腔体内部多模谐振规律。在共振频率附近,腔体内中心点的耦合电场较强,当频率低于主频谐振时,屏蔽效能随着频率的降低而增大;在2GHz 频率范围内,腔体内部各个方向的屏蔽效能都存在多模谐振的现象,且谐振模式不相同;开有相同面积的孔阵屏蔽效能比单孔差,谐振模式变化不大。     

多孔矩形腔电磁耦合拓扑分解与计算

为了发挥电子系统在复杂电磁环境下的工作效能,通常要求对电子系统进行屏蔽处理.但是由于通风和散热需求,在屏蔽腔表面会开一些小孔,因此就出现多孔屏蔽问题.采用电磁拓扑的方法,建立了外部激励源通过多孔缝与内部电子系统之间的电磁交互作用拓扑图,结合电磁耦合的多步迭代算法,并应用CRIPTE软件进行外部场耦合到内部腔体,以及腔体内双导线的终端负载计算.数值计算表明:在多孔情况下需要考虑孔缝间的电磁交互、在同等屏蔽条件及散热要求下开多孔比开单孔更有利于电磁屏蔽、在同一系统中,电路离孔缝越远屏蔽效能越好,电路置于腔体侧面比正对孔缝屏蔽效能好.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.