基于噪声抵消技术的超宽带低噪声放大器

实现了一款超宽带低噪声放大器( UWB LNA)。该UWB LNA由输入级、中间级和输出级组成。在输入级,采用两个共栅配置构成了噪声抵消技术,减少了噪声,在此结构基础上进一步采用了跨导增强技术,提高了增益。同时插入的电感Lin提高了LNA在宽带范围内的增益平坦度。中间级放大器,在漏极并联电感产生零点,提高了LNA的带宽。输出级为源极跟随器,较好实现了LNA的阻抗匹配。基于0.18μm TSMC CMOS工艺仿真验证表明,在4 GHz~10 GHz频带范围内,电压增益( S21)为(19.2±0.3)dB,噪声系数(NF)介于2.1 dB~2.4 dB之间,输入、输出反射系数(S11、S22)均小于-10 dB。在9 GHz时,输入三阶交调点(IIP3)达到-7 dBm。在1.8 V的电源电压下,功耗为28.6 mW。     

基于噪声抵消技术的低功耗C频段差分低噪声放大器

设计了一款"基于噪声抵消技术的低功耗C频段的差分低噪声放大器。该放大器由输入级、放大级以及输出缓冲级3个模块构成,其中输入级采用电容交叉耦合的差分对与直接交叉耦合结构差分对级联,实现输入匹配及噪声抵消;放大级采用具有电阻-电感并联反馈的电流复用结构来获得高的增益、良好的增益平坦性及低的功耗;输出缓冲级采用源跟随器结构,实现良好的输出匹配。基于TSMC 0.18μm CMOS工艺库,验证表明在C频段,放大器的增益为20.4设计了一款??基于噪声抵消技术的低功耗C频段的差分低噪声放大器。该放大器由输入级、放大级以及输出缓冲级3个模块构成,其中输入级采用电容交叉耦合的差分对与直接交叉耦合结构差分对级联,实现输入匹配及噪声抵消;放大级采用具有电阻-电感并联反馈的电流复用结构来获得高的增益、良好的增益平坦性及低的功耗;输出缓冲级采用源跟随器结构,实现良好的输出匹配。基于TSMC 0.18 μm CMOS工艺库,验证表明在C频段,放大器的增益为20.4??0.5 dB,噪声系数介于2.3~2.4 dB之间,输入和输出的回波损耗均优于-11 dB,稳定因子恒大于1,在6.5 GHz下,1 dB压缩点为-16.6 dBm,IIP3为-7 dBm,在2.5 V电压下,电路功耗仅为6.75 mW。     

一款采用有源电感的增益可调且平坦的超宽带低噪声放大器

采用有源电感,设计了一款增益可调且平坦的超宽带低噪声放大器(FTG UWB-LNA)。在输入级,采用具有新型偏置电路和RLC反馈的共基-共射放大器来实现良好的宽带输入阻抗匹配;在放大级,采用由新型有源电感与达林顿结构构成的组合电路,来实现增益的可调性、平坦化和幅度提升。在输出级,采用电阻并联和电流镜偏置的共集放大器,来实现良好的输出阻抗匹配。基于WIN 0.2μm GaAs HBT工艺库,对FTG UWB-LNA进行验证,结果表明：在1-6GHz频带内,增益(S21)可以在21.16dB-23.9dB之间调谐,最佳增益平坦度达到±0.65dB;输入回波损耗(S11)小于-10dB;输出回波损耗(S22)小于-12dB;噪声系数(NF)小于4.08dB;在4V的工作电压下,静态功耗小于33mW。     

一种恒跨导轨对轨输入/输出CMOS运算放大器

设计了一种CMOS恒跨导轨对轨输入/输出运算放大器,输入级采用负反馈技术控制尾电流,能自调整gm并使之保持恒定;输出级采用前向偏置AB类输出结构,实现轨对轨输出的同时减小了静态功耗。整个电路在5 V电源电压下,电压增益达到136 dB(1 MΩ电阻和1 pF电容并联负载),单位增益带宽为9.7 MHz,相位裕度62.4°。     

一种采用噪声抵消及多重功耗优化技术的UWB-LNA

采用噪声抵消及多重功耗优化技术,提出了一种超宽带低噪声低功耗放大器。它主要包括采用RL网络的共栅输入级、电流复用型噪声抵消级、放大输出级以及偏置电路四个部分。验证结果表明,该放大器,在2-6GHz频带内,增益(S21)可以在14dB以上;输入回波损耗(S11)小于-10dB;输出回波损耗(S22)小于-25dB;噪声系数(NF)小于3.2dB;在3.8V的工作电压下,功耗仅为14mW。     

X波段GaN MMIC低噪声放大器设计

采用SiC衬底0.25 μm AlGaN/GaN高电子迁移率晶体管(HEMT)工艺,研制了一款X波段GaN单片微波集成电路(MMIC)低噪声放大器(LNA).放大器采用三级级联拓扑,第一级采用源极电感匹配,在确保良好的输入回波损耗的同时优化放大器噪声系数;第三级采用电阻电容串联负反馈匹配,在尽量降低噪声系数的前提下,保证良好的增益平坦度、输出端口回波损耗以及输出功率.在片测试表明,在10 V漏级电压、-2 V栅极电压偏置下,放大器静态电流为60 mA,8～12 GHz内增益为22.5 dB,增益平坦度为±1.2 dB,输入输出回波损耗均优于-11 dB,噪声系数小于1.55 dB,1 dB增益压缩点输出功率大于11.9 dBm,其芯片尺寸为2.2 mm×1.1 mm.装配测试表明,噪声系数典型值小于1.6 dB,可承受33 dBm连续波输入功率.该X波段GaN低噪声放大器与高功率放大器工艺兼容,可以实现多功能集成,具有广阔的工程应用前景.     

一种高增益且可调谐的1~3 GHz宽带LNA

提出了一种增益高且增益可调谐的1~3 GHz宽带低噪声放大器(HTG-LNA)。在输入级,采用带有RC串联负反馈的共基-共射电流镜结构,实现了良好的输入匹配,并提高了电路的稳定性;在中间级,采用以有源电感作为负载的共基-共射达林顿电路结构,在保证宽带的同时实现了较高的增益与增益的可调谐;在输出级,采用带有电流镜的射极跟随器结构,获得了较大的输出功率和良好的输出匹配。基于稳懋0.2 μm GaAs HBT工艺进行验证,结果表明,该HTG-LNA的电压增益大于37 dB,最高可达50.7 dB;功率增益大于37.4 dB,最高可达51 dB;最大增益可调谐幅度为2.2 dB;输入回波损耗小于-7.11 dB;输出回波损耗小于-11.97 dB;噪声系数小于3.23 dB;稳定因子大于5.61;在5 V工作电压下,静态功耗小于65 mW。     

SiGe HBT双频段可变增益放大器设计

提出了一款新型的双频段可变增益放大器(DBVGA),分别工作在3G-WCDMA的2.2GHz和WLAN的5.2GHz两个频段。放大器分为增益控制级、输入输出级和放大级。其中,增益控制级采用电流驱动技术和发射极串联电感来减小噪声和输入阻抗的影响,进而实现大动态的增益变化。输入级通过电容电感串并联方法实现双频段的输入匹配。放大级使用Cascode结构和电流复用技术来提高增益和减小功耗。采用Jazz 0.35μm SiGe BiCMOS工艺设计芯片版图,版图面积为0.5mm2。仿真结果表明,当控制电压从0V到1.4V变化时,DBVGA在2.2GHz和5.2GHz下的增益可变范围分别达到30dB和16dB,最大增益处的噪声分别为2.3dB和3.2dB,输入和输出驻波比约1.5。     

一种5.0~9.3 GHz低功耗宽带低噪声放大器设计

针对Wi-Fi 6、Wi-Fi 6E(5 GHz、6 GHz)的低功耗、宽带宽等无线局域网(WLAN)设备需求,基于65 nm CMOS工艺设计了一款两级低功耗宽带低噪声放大器(LNA)。电路第一级采用结合互补共源电路的共源共栅结构,通过电感峰化技术和负反馈技术的运用,提高输入跨导,降低噪声,并拓展带宽和提高增益平坦度。第二级在共漏极缓冲器基础上引入辅助放大结构、电感峰化技术,实现抵消第一级共源管的噪声并拓展带宽。电路采用提出的前向衬底自偏置技术,以降低电路对电源电压的依赖,整体电路实现两路电流复用,从而有效降低了功耗。仿真结果表明,在5~9.3 GHz频带内LNA的S21为17.8±0.1 dB,S11小于-9 dB、S22小于-11.9 dB,噪声系数小于1.34 dB。在0.8 V电压下整体电路功耗为5.3 mW。     

低电压低功耗宽带CMOS低噪声放大器的设计

设计了一种应用于宽带(0.8～3.0GHz)接收机的低电压低功耗低噪声放大器。该放大器以折叠的共源共栅结构为基础,采用噪声抵消结构,通过两条并联的等增益支路来抵消匹配器件在输出端所产生的噪声,实现输入阻抗匹配和噪声优化。电路采用0.18μm CMOS工艺,利用Cadence软件进行设计和仿真。结果表明,该低噪声放大器在0.8～3.0GHz带宽范围内噪声系数(NF)小于3.2dB,电压增益(S21)在17.6～18.5dB之间,S11小于-12dB,S22小于-20dB,在0.8V电源电压下,功耗为9.7mW,版图面积为0.18mm2。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks