Raman Studies of ${rm Ti}_{bm{ 1-x}} {rm Fe}_{bm x} {rm O}_{bm 2}$ Nanoparticles

Ti_1-xFe_xO₂ (x = 0.00-0.13) nanoparticle samples were prepared by hydrolysis method. We investigated the effects of Fe doping on the structural and magnetic properties of the Ti_1-xFe_xO₂ nanoparticle system. Scanning electron microscopy and X-ray diffraction measurements confirm that the particle size of the powder is in nanoscale, and that the magnetic Fe impurities substitute for the Ti sites in the anatase TiO₂ phase. All the samples with x > 0 were found to be super-paramagnetic at room temperature by magnetization measurements. Raman spectra also strongly support that the Fe atoms go into the Ti-site in theTiO₂ structure. For comparison, ceramic Ti_1-xFe_xO₂ samples were also prepared by usual ceramic method. Ferromagnetism was observed only in the ceramic Ti_1-xFe_xO₂ system. Additional Raman peak at around 610 cm^-1 is observed only in the ceramic samples. This may be related to the clusters created by mixture of various valence state of Fe, which probably would be the cause for ferromagnetism observed in the ceramic Ti_1-xFe_xO₂ system.     

A $hbox{TiSi}_{2}/hbox{Si}$ Heteronanocrystal Memory Operated With Hot Carrier Injections

The programming and erasing of a TiSi₂ /Si heteronanocrystal memory were carried out by channel hot electron injection and drain side hot hole injection, respectively. Compared to an Si nanocrystal memory, a TiSi₂ /Si heteronanocrystal memory exhibits much better writing/erasing efficiency and higher writing/erasing saturation level. The retention transient process indicates that the TiSi₂ /Si heteronanocrystal memory has a very slow charge loss mechanism. The result of the localization of charge shows that a reverse read leads to a higher threshold voltage shift, which is almost not dependent on the amplitude of the read voltages.     

Improvement of Electrical Properties of $hbox{Ba}_{{bf 0.7}}hbox{Sr}_{bf 0.3}hbox{TiO}_{bf 3}$ Capacitors With an Inserted Nano-Cr Interlayer

The metal–insulator–metal (MIM) capacitors were prepared with $hbox{Ba}_{0.7}hbox{Sr}_{0.3}hbox{TiO}_{3}hbox{/Cr/Ba}_{0.7}hbox{Sr}_{0.3}hbox{TiO}_{3}$ (BST/Cr/BST) dielectric and Pt electrode. The multilayer BST/Cr/BST was sputtered onto $hbox{Pt/Ti/SiO}_{2}hbox{/Si}$ substrate. The presence of nano-Cr interlayer affects the electrical properties of the capacitors. The temperature coefficient of capacitance (TCC) of capacitors with 2 nm Cr is about 69% of that of capacitors without Cr. In a previous work, the formation of the $hbox{TiO}_{2}$ secondary phase was found after the BST/Cr/BST dielectrics were annealed at 1023 K in $hbox{O}_{2}$ atmosphere for 1 h. It is suggested that the nano-Cr interlayer as a catalyst leads to the $hbox{TiO}_{2}$ formation during the annealing in $hbox{O}_{2}$ atmosphere. The negative value of TCC of BST can be compensated by the positive TCC of $hbox{TiO}_{2}$, and the temperature stability in the dielectric constant can be realized for capacitors with nano-Cr interlayer. The voltage stability of BST is also improved with the insertion of nano-Cr interlayer, and the quadratic coefficient in voltage coefficient of capacitance (VCC) of Pt/BST/Cr(2 nm)/BST/Pt is about 30% of that of the BST capacitor without Cr. The effects of Cr thickness on TCC, VCC, dissipation factor, and leakage current density of Pt/BST/Cr/BST/Pt parallel plate capacitors are investigated.      

AlGaN/GaN Schottky Barrier Photodetector With Multi-${rm Mg}_{rm x} {rm N} _{rm y} $/GaN Buffer

AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-Mg_xN_y/GaN buffer was proposed and fabricated. Compared with AlGaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the multi-Mg_xN_y/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.     

Structure and Magnetic Properties of Sn$_{1 - {rm x}}$ Co$_{rm x}$ O$_{2}$ Powder and Film

We have studied room-temperature ferromagnetism (RTFM) in Sn$_{1 - {rm x}}$Co$_{rm x}$O$_{2}$ powders and films fabricated by the sol-gel method. Our X-ray diffraction, high-resolution transmission microscopy, and X-ray photoelectron spectroscopy results show that all the samples have a pure rutile structure, and Co ions have a chemical valence of 2+. In addition, the magnetic moment per Co ion drops rapidly with the increase of Co content. Interestingly, Sn $_{1 - {rm x}}$Co $_{rm x}$O $_{2}$ films spin-coated on a Si (111) substrate have much larger magnetic moment than powder samples, because film samples have larger domain volumes, which may induce stronger long-range magnetic exchange coupling.      

Circuit-Coupled ${bf t}_{0}hbox {-}phi$ Formulation With Surface Impedance Condition

A finite-element formulation based on the use of magnetic scalar potential is proposed. It allows to describe circuit-coupled electromagnetic formulation using magnetic scalar potential in presence of multiply connected solid conductors (with holes), treated by surface impedance condition. This formulation offers powerful solutions at a low cost. An example of application is given.     

Electric Field Sensing Scheme Based on Matched $ hbox{LiNbO}_{3}$ Electro-Optic Retarders

In this paper, a wideband-electric-field-sensing scheme that uses optically matched integrated optics electrooptic devices and coherence modulation of light is described. In a coherence modulation scheme, the integrated optics sensor detects the electric field and imprints it around an optical delay. The optical delay is generated by a birefringent optical waveguide in a lithium niobate (LiNbO₃) integrated optics two-wave interferometer. The modulated optical delay, acting as an information carrier, is transmitted through an optical fiber channel. At the receiver, light is demodulated by a second integrated optics two-wave interferometer, which also introduces a second optical delay. The optical delays on the sensor and demodulator are matched at the same value. The integrated optics demodulator measures the autocorrelation of light around the optical delay value, and the imprinted electric field is recuperated as a linear variation of the received optical power. The matching of the sensor and demodulator allows a direct detection of the electric field, giving a unique feature to this fiber-integrated optics scheme. The experimental setup described here uses two pigtailed LiNbO₃ electrooptic crystals: one acting as the electric field sensor and the other acting as the optical demodulator. The wideband sensing range on the experimental setup corresponds to frequencies between 0 and 20 kHz.     

Error Tolerant DNA Self-Assembly Using ( $hbox{2}k-hbox{1}$)$times$( $hbox{2}k-hbox{1}$) Snake Tile Sets

DNA self-assembly has been advocated as a possible technique for bottom-up manufacturing of scaffolds for computing systems in the nanoscale region. However, self-assembly is affected by different types of errors (such as growth and facet roughening) that severely limit its applicability. Different methods for reducing the error rate of self-assembly using tiles as basic elements have been proposed. A particularly effective method relies on snake tile sets that utilize a square block of even size (i.e., 2k times 2k tiles, k = 2, 3,.. .). In this paper, an odd-sized square block [i.e., (2k -1) times (2k - 1)] is proposed as basis for the snake tile set. Compared with other tile sets, the proposed snake tile sets achieve a considerable reduction in error rate at a very modest reduction in growth rate. Growth and facet roughening errors are considered and analytical results are presented to prove the reduction in error rate compared with an even-sized snake tile set. Simulation results are provided.     

High Bulk Spin Scattering Asymmetry in CPP Spin Valves With Alternated Monatomic $[hbox{Fe/Co}]_{rm n}$ Superlattice

We confirmed the structural properties of trilayered epitaxial films with AML [Fe/Co]_n and Au spacer on Au electrode by RHEED and TEM. A considerably large DeltaRA (2.61 mOmegamum²) resistance area product was observed in all metallic current perpendicular-to-plane giant magneto-resistance (CPP-GMR) spin-valve elements by using alternate monatomic epitaxial [Fe/Co]_n ferromagnetic layer with IrMn layer on the top. The estimated spin scattering asymmetry coefficient beta and interface asymmetry coefficient gamma was 0.81 and 0.43 plusmn 0.05, respectively. This value of beta is higher than that of Fe₅₀Co₅₀/Cu laminated with Cu spacer or Heusler alloy which is largest value ever reported at room temperature.     

Surface Roughness in Plasma-Etched $hbox{As}_{bf 2}hbox{S}_{bf 3}$ Films: Its Origin and Improvement

We describe the microstructure of As₂S₃ films and its effect on the morphology of plasma-etched surfaces. The Raman spectroscopy and X-ray photoelectron spectroscopy demonstrated that the observed grainy morphology of etched As₂S₃ surfaces comes from differential chemical attack between different phases within the film. Two approaches were found to be effective for improving the smoothness of etched surfaces: a change in the plasma chemistry from CF₄-O₂ to CHF₃-O₂ and the application of a thin-conformal coating onto structures already patterned using CF₄-O₂ plasma.     

Microsystem With Fluidic and Optical Interface for Inline Measurement of ${rm CO}_{2}$ in Oil Fields

Motivated by the need for inline measurements in natural gas and oil exploitation, we developed a microfluidic system which is suitable for chemical measurements by optical methods. It consists of a microfluidic system allowing the separation of gas and liquid phases so that gas can be optically analyzed. This system takes advantage of surface tension effects in tiny microchannels. The application is the measurement of carbon dioxide (CO₂) concentration by evaluating absorption of infrared light at a wavelength of 4.24 mum. Measurements have been successfully performed in the 0-70 bars pressure range.     

Dynamic Formation of Diffraction Grating in a Photorefractive Liquid Crystal Cell With Mesoporous $hbox{TiO}_{2}$ Layers

We report the photorefractive effect of a layer-structured liquid crystal cell using N3-chemisorbed mesoporous TiO₂ layers as photoconductive layers. Well-organized mesoporous thin films were prepared using surfactant templates. N3 was chemisorbed on the mesoporous TiO₂ layer to effectively generate excited electrons, which could be injected in the TiO₂ layer and participate in the generation of a space-charge field in the LC cell. The prepared liqud crystal cell shows unique characteristics of an inorganic photoconductive layer, a temporal diffraction grating formation.     

Novel Built-In Current-Sensor-Based $I_{rm DDQ}$ Testing Scheme for CMOS Integrated Circuits

This paper presents a new built-in current sensor (BICS)-based $I_{rm DDQ}$ testing scheme for complementary metal-oxide semiconductor (CMOS) integrated circuits (ICs). The proposed BICS will employ short detection times and low power dissipation to effectively ensure the reliability of the BICS and reduce the impact of the circuit under test (CUT) during testing. In addition, an $I_{rm DDQ}$ testing scheme based on the proposed BICS for detecting the abnormal quiescent current is presented. A 16-kB CMOS static random access memory (SRAM) is used as the CUT in this paper to discuss the testing considerations, including fault models and the $I_{rm DDQ}$ testing strategy. The simulation results show that the proposed BICS has a much improved performance compared with that in previous works. In addition, the physical chip design of the proposed BICS-based $I_{rm DDQ}$ testing scheme for SRAM testing applications is also implemented using the Taiwan Semiconductor Manufacturing Company (TSMC) 0.18-$mu hbox{m}$ CMOS technology. The test results show that 100% fault coverage can be achieved with only a 1.23% area overhead penalty.      

Structural Stability and Magnetic Properties of the TbCu$_{7}$ -Type SmCo$_{x - 0.4}$Ti$_{0.4} (x = 5.0hbox{–}8.5)$ Alloys

We have studied the composition dependence, thermal stability, long-term stability at 500°C, and magnetic properties of the nanostructural TbCu₇-type (1:7) Sm-Co-Ti alloys. We prepared the SmCox-0.4Ti_0.4 alloys with a wide composition range from x = 5.0 to x = 8.5 by high-energy ball-milling, followed by annealing at 700-1100°C for 2 h. After annealing at 700°C, the powders with x = 7.0-8.5 showed a single 1:7 structure, while the powders with x = 5.0-6.5 presented the 1:7 plus CaCu₅-type (1:5) structure. At an annealing temperature higher than 800°C, a minor Th₂Zn₁₇-type (2:17) phase precipitated in the matrix of the 1:7 phase. Intrinsic coercivity iHc exhibits a maximum of 2.3 T at room temperature and 0.4 T at 500°C in the x = 7.0 samples annealed at 700°C. The temperature coefficient of iHc seems stable as the Sm/Co ratio changes from 1/6.5 to 1/7.5. The coercivity decreased with increasing annealing temperature Ta, from 2.3 T at Ta = 700°C to 1.3 T at Ta = 1100°C, which is mainly attributed to the grain growth from 35 nm for Ta = 700°C to 1 ?m for Ta = 1100°C. After holding at 500°C for up to 360 h, the microstructure and magnetic properties of the 1:7-type nanograin alloys remained almost unchanged, indicating a structurally and magnetically long-term stabilization at the potential high-temperature application environment.