Determination of Electron Swarm Parameters in Pure CHF3 and CF4 by a Time-Resolved Method

The density-normalized effective ionization coefficient (α-η)/N (α and η are the ionization and attachment coefficients respectively), the electron drift velocity V e and density-normalized longitudinal diffusion coefficient ND L in trifluoromethane (CHF3 ) and carbon tetrafluoride (CF4 ) were measured using a pulsed Townsend technique over a wide E/N range. From the plots of (α-η)/N, we have derived the limiting field strength, (E/N) lim , which is valid for the analysis of insulation characteristics and applications to power equipment. Comparisons of the electron swarms parameters between CHF3 and CF4 have been performed, and the global warming potential (GWP) is also taken into account.     

Simulation of UAl4 growth in an UAl3/Al diffusion couple

In this work the growth of the UAl₄ phase in an UAl₃/Al diffusion couple is treated as a planar moving boundary problem due to diffusion of Al and U atoms in the direction perpendicular to the interface surface. The diffusion problem was carried out by the DICTRA simulation package which combines data evaluated by Thermo-Calc with a mobility database. A thermodynamic database of the U-Al system, suitable for the Thermo-Calc code, was composed using data from literature. The mobility database was assessed from reported experimental growth of the UAl₄ phase at different temperatures. The Al tracer diffusion coefficient in the UAl₄ phase, is obtained under the assumption that uranium mobility is negligible.     

Interface strain study of thin Lu2O3/Si using HRBS

The interface of thin Lu₂O₃ on silicon has been studied using high-resolution RBS (HRBS) for samples annealed at different temperatures. Thin rare earth metal oxides are of interest as candidates for next generation transistor gate dielectrics, due to their high-k values allowing for equivalent oxide thickness (EOT) of less than 1 nm. Among them, Lu₂O₃ has been found to have the highest lattice energy and largest band gap, making it a good candidate for an alternative high-k gate dielectric. HRBS depth profiling results have shown the existence of a thin (∼2 nm) transitional silicate layer beneath the Lu₂O₃ films. The thicknesses of the Lu₂O₃ films were found to be ∼8 nm and the films were determined to be non-crystalline. Angular scans were performed across the [1 1 0] and [1 1 1] axis along planar channels, and clear shifts in the channeling minimum indicate the presence of Si lattice strain at the silicate/Si interface.     

Heats of formation of (U,Mo)Al3 and U(Al,Si)3

The heats of formation of (U,Mo)Al₃ intermetallic compounds were obtained by measuring the reaction heats of U-Mo/Al dispersion samples by differential scanning calorimetry. Based on literature data for the reaction heats of U₃Si/Al and U₃Si₂/Al dispersion samples, the heats of formation of U(Al,Si)₃ as a function of the Si content were calculated. The heat of formation of (U,Mo)Al₃ becomes less negative as the Mo content increases. Conversely, the heat of formation of U(Al,Si)₃ becomes more negative with increasing Si content.     

Molecular dynamics simulations to explore the effect of chemical bonding in the keV bombardment of Si with C60, Ne60 and Ne60 projectiles

Depth profiling experiments using secondary ion spectrometry (SIMS) have shown effects that are characteristic to the pairing of the projectile with a Si target. Previous molecular dynamics simulations demonstrate that this unusual behavior is due to the fact that strong covalent bonds are formed between the C atoms in the projectile and the Si atoms in the target, which result in the implantation of carbon into the solid. The focus of this paper is to understand how the formation of chemical bonds affects the net sputtered yield. The results of molecular dynamics simulations of the keV bombardment of Si with C₆₀, Ne₆₀ and ¹²Ne₆₀ at normal incidence are compared over a range of incident kinetic energies from 5 to 20 keV. The net yields with Ne₆₀ and ¹²Ne₆₀ are significantly greater than with C₆₀ at all incident kinetic energies, with ¹²Ne₆₀ having the largest values. Application of the mesoscale energy deposition footprint (MEDF) model shows that the initial deposition of energy into the substrate is similar with all three projectiles. Snapshots of the initial pathway of the projectile atoms through the substrate show a similar lateral and vertical distribution that is centered in the region of the energy footprint. Therefore, the reason for the reduced yield with C₆₀ is that the C atoms form bonds with the Si atoms, which causes them to remain in the substrate instead of being sputtered.     

Pulsed X-ray induced transient absorption in LiNbO3, TiO2:LiNbO2, and MgO:LiNbO3 at 1061nm

Characteristics of pulsed X-ray induced transient absorption at 1061 mm have been determined for LiNbO₃, TiO₂:LiNbO₃, and MgO:LiNbO₃. The addition of the dopants TiO₂ and MgO reduces the induced absorption significantly. The two materials, LiNbO₃ and TiO ₂:LiNbO₃, decay with an approximate 1/t^1/4 time dependence for the time interval 0.01 to 8 ms. After 8 ms, the decay rate for LiNbO₃ is faster than 1/t^1/4, and the decay rate for TiO₂:LiNbO₃ is slower than that initial rate. A low-intensity absorption which lasts for about 20 μs is observed for the MgO:LiNbO₃. Peak radiation induced absorption coefficients for LiNbO₃, TiO₂:LiNbO₃, and MgO:LiNbO₃ have been determined     

Thermodynamic modelling of LiF-LnF3 and LiF-AnF3 phase diagrams

The phase diagrams of the LiF-LnF₃ series, where Ln = La-Sm, and of LiF-AnF₃, where An = U, Pu, have been optimized using Redlich-Kister functions. The phase diagrams of LiF-AmF₃ and LiF-PuF₃-AmF₃ have been calculated. The necessary Gibbs energy functions for americium trifluoride were defined by use of a semi-empirical method. The excess Gibbs energy terms, which are expressed as Redlich-Kister polynomials and describe the effect of interaction between the two fluoride components in the liquid phase, were obtained by translating the trends observed in the lanthanide trifluoride series into the actinide series. A single eutectic has been found in the LiF-AmF₃ system with the eutectic point at ?33 mole% AmF₃ and at ?951 K.     

含TBP-HNO3超临界CO2流体静态络合萃取U3O8

建立了一种快速降低萃取系统压力的静态络合萃取实验装置。在此装置上研究了含TBP-HNO₃超临界CO₂静态络合U₃O₈的快速气化测量方法,探索了含TBP-HNO₃超临界CO₂静态络合萃取U₃O₈的行为规律。     

Strain enhancement in Si induced by direct bonding of a LaAlO3 film to a Si substrate

The depth profiles of lattice strain near the interface regions of LaAlO₃/Si and the SiO₂ interfacial layer/Si were investigated by the ion channeling technique using high-resolution Rutherford backscattering spectroscopy (HRBS). In the case of the LaAlO₃/Si stack, horizontal tensile strain in the Si near the interface was clearly observed. However, this strain was relaxed by formation of the interfacial layer through annealing in an oxygen ambient. These results suggest that the strain in Si induced by a dielectric strongly depends on the material in contact with Si.     

Bulk-compositional changes of Ni2Al3 and NiAl3 during ion etching

Bulk-compositional changes of Ni₂Al₃ and NiAl₃ in a Ni-50 wt% Al alloy during ion etching have been investigated by transmission electron microscopy and energy dispersive X-ray spectroscopic analyses. After etching with 7, 5 and 3 keV Ar⁺ ions for 15, 24 and 100 h nickel contents in both Ni₂Al₃ and NiAl₃ exceeded greatly those in the initial compounds and increased with the decrement of the sputtering energy. After 100 h etching with 3 keV Ar⁺ ions the compositions of these two compounds reached a similar value, about Ni_80-83Al_12-15Fe_3-4Cr_1-2 (at%). A synergistic action of preferential sputtering, radiation-induced segregation and radiation-enhanced diffusion enables the altered-layers at the top and bottom of the film extend through the whole film. The bulk-compositional changes are proposed to occur in the unsteady-state sputtering regime of ion etching and caused by an insufficient supply of matter in a thin film.     

Ion beam induced desorption from thin films: SiO2 single layers and SiO2/Si multilayers

The occurrence of O₂ molecular loss from the bulk of SiO₂ single layers and SiO₂/Si multilayers as a result of 50 MeV Cu⁹⁺ irradiation has been investigated. This process did not take place with a significant rate, if it occurs at all. Instead both Si and O are removed from the SiO₂ surface region, releasing molecular O₂. If an elemental Si layer is on top in a multilayer, removal of Si and O with an appreciable rate is not observed. The irradiation creates bubbles in the SiO₂/Si multilayers, which contain O₂. The distinct SiO₂ sublayers remain chemically intact. The bubbles deteriorate the depth resolution in elastic recoil detection.     

Carbon deposition from a γ-irradiated CO2/CO/CH4/C2H6 gas mixture on the manganese oxides MnO, Mn3O4 and Mn2O3

The composition of oxides formed on steel surfaces within power reactors may influence heat transfer efficiency. Previous studies have indicated that carbon is deposited on spinal-type oxides containing manganese, iron, cobalt, nickel and chromium. In this investigation, characterised manganese oxides have been subjected to γ-irradiation under conditions similar to those experienced in reactors in an effort to understand the catalytic processes involved in deposit initiation and growth. Mn₃O₄ and Mn₂O₃, under the conditions present in the γ-cell, were reduced to MnO during the time of exposure. Relative carbon deposition rates were observed to follow the trend MnO>Mn₃O₄≈Mn₂O₃.     

The crystal structure of Th3B2C3

The crystal structure of Th₃B₂C₃ has been determined by single crystal X-ray analysis. The lattice parameters of the monoclinic cell (first setting) are: $\text{a = 3.703 (2)}\text{A}\text{?}\text{, b = 9.146 (4)}\text{A}\text{?}\text{, c = 3.773 (1)}\text{A}\text{?}\text{and γ = 100.06 (7)°}$; space group: P2/m (C$\text{1}\text{2}{}_{\mathrm{h}}$), Z = 1. Intensity measurements were obtained from a fourcircle diffractometer. The structure was solved by Patterson methods and refined by full matrix least squares calculation. For an asymmetric set of 401 independent reflexions the final R-value is 0.079. The structure contains octahedra, tetrahedra and trigonal prisms of Th-atoms. The trigonal prisms are centered by boron atoms, Th-octahedra by carbon atoms Cl; Carbon atoms C2 actually have octahedral coordination 5 Th + 1 B. The structural chemistry of Th₃B₂C₃ with respect to the crystal structures of ThC and ThBC is discussed.     

The treatment of TRISO coated particles with CF4 in a low temperature plasma

An alternative recovery method to the mechanical crushing of off-specification tri-structural-isotropic (TRISO) coated fuel microspheres is demonstrated. It is shown that the inert SiC layer can be completely removed by etching with the active fluorine species from an inductively coupled radio-frequency CF₄ glow-discharge impinging a static bed from the top, at a working pressure of 1 kPa. At this pressure mass transport does not have a rate limiting role and the chemical reaction itself is rate determining. A treatment time of roughly 4 h is required for the conditions reported here.     

Formation of U2C3 in the reaction of UC2 with UO2

The formation of U₂C₃ by the reaction of UC₂ with UO₂ has been studied by chemical and X-ray analyses at temperatures between 1400 and 1700 °C in vacuo. The reaction is represented by 7 UC₂ + UO₂ → 4 U₂C₃ + 2 CO.     

基于铌酸银的耐高温放射性碘吸附剂的制备及性能

通过机械混合法制备了一种基于铌酸银(AgNbO_3)的耐高温放射性碘吸附剂(AgNbO_3/Al_2O_3)。和常规载银吸附剂(Ag/Al_2O_3)相比,AgNbO_3/Al_2O_3吸附剂的吸附性能更为稳定;特别是在650℃以上时,其对放射性碘的去污因子远高于常规载银吸附剂。表征测试结果表明,该吸附剂结构稳定性良好,可耐受较长时间的高温。热重测试和高温脱附试验等结果表明,碘化银在AgNbO_3/Al_2O_3吸附剂表面稳定性的提高是该吸附剂在高温时吸附性能更佳的主要原因,其将来有望用于核事故中的应急处置。     

The pre-dose effect in natural white mica (H2KAl3(SiO4)3)

A comprehensive study of the pre-dose effect was carried out for natural white mica. A pre-dose of 1 kGy of γ-radiation followed by thermal activation to 550 °C of fired mica (heated at 800 °C for 10 h) leads to a large increase in the TL sensitivity. The TL response to γ-rays of sensitized aliquots was found to be linear-sublinear while that of unsensitized aliquots was linear-superlinear referring specifically to graphs drawn on a linear-linear scale. The change in the TL sensitivity of mica was explained by using the recombination during heating model. This study is of importance in dating and retrospective dosimetry.     

Thickness and MeV Si ions bombardment effects on the thermoelectric properties of Ce3Sb10 thin films

The three single layer Ce₃Sb₁₀ thin films were grown on silicon dioxide and quartz (suprasil) substrates with thicknesses of 297, 269 and 70 nm using ion beam assisted deposition (IBAD) technique. The high-energy cross plane Si ion bombardments with constant energy of 5 MeV have been performed with varying fluence from 1 × 10¹², 1 × 10¹³, 1 × 10¹⁴, 1 × 10¹⁵ ions/cm². The Si ions bombardment modified the thermoelectric properties of films as expected. The fluence and temperature dependence of cross plane thermoelectric parameters that are Seebeck coefficient, electrical and thermal conductivities were determined to evaluate the dimensionless figure of merit, ZT. Rutherford backscattering spectrometry (RBS) enabled us to determine the elemental composition of the deposited materials and layer thickness of each film.     

Elastic and electronic properties and stability of SrThO3, SrZrO3 and ThO2 from first principles

First-principle calculations in the framework of the full-potential linearized-augmented-plane-wave method (FLAPW, as implemented into the WIEN-2k code) have been performed to understand the structural, elastic, cohesive and electronic properties of the meta-stable cubic strontium thorate SrThO₃. The optimized lattice parameters, elastic parameters, formation energies, densities of states, band structures and charge density distributions are obtained and discussed in comparison with those of cubic SrZrO₃ and ThO₂.     

High-temperature specific heat of UO2 ThO2, and A12O3

The high-temperature specific heat of solid UO₂, ThO₂, and Al₂O₃ can be represented by an equation of the form $\text{C}{}_{\mathrm{p(s)}}\text{= 3}{}_{\mathrm{n}}\text{RF(?}{}_{\mathrm{D}}\text{/T) + dT}{}^3$, (1) where ?_D is the Debye temperature, F(?_D/T) is the Debye function, $\text{d}$ represents contributions of the anharmonic vibrations within the lattice, and $\text{n}$ denotes the number of atoms per molecule. In the liquid the corresponding equation is $\text{C}{}_{\mathrm{p(1)}}\text{= 3}{}_{\mathrm{n}}\text{RF(?}{}_{\mathrm{D}}\text{/T) +}\text{h}\text{T}{}^2$, (2) where h is the anharmonic term. It is shown that for Al₂O₃ and UO₂, where experimental data for the liquid phase are also available, $\text{d}\text{h}$ has the same value, Indicating that both materials behave identically. If we compare the thermodynamic relationship $\text{C}{}_{\mathrm{p}}\text{? C}{}_{\mathrm{v}}\text{= Vα}{}^2\text{KT}$, (3) where V is the volume, $\text{α}$ the volume expansion coefficient, and $\text{K}$ the bulk modulus, with equation (1), It follows that d must be equal to $\text{Vα}{}^2\text{K}\text{T}{}^2$; the value of $\text{Vα}{}^2\text{K}\text{T}{}^2$ is calculated in the temperature region where d was obtained; within experimental error they are equal.