好氧—厌氧—好氧工艺在焦化废水处理中的应用

介绍用好氧—厌氧—好氧工艺去除焦化废水中氨氮的效果及影响因素。     

Fenton—微电解—复式A/O工艺对合成制药废水的处理

针对合成制药废水的特性,采用Fenton—微电解—复式A/O工艺处理该废水。经该工艺处理后出水达到《污水综合排放标准》(GB 8978—1996)三级排放标准及《工业企业废水氮、磷污染物间接排放限值》(DB 33/887—2013)。工程实践表明,该工艺在应对复杂多变且有毒性的合成制药废水处理过程中,处理效果好、运行稳定、投资较少。     

NA—5、NA—6聚氨酯粘合剂鉴定

山西省化工研究所研制的NA—5和NA—6聚氨酯粘合剂于1992年6月12日在太原通过了专家鉴定。NA—5聚氨酯粘合剂为双组分胶,粘接强度高。贮存稳定性好,适用于聚氨酯与金属之间的粘接。NA—6聚氨酯粘合剂为单组分胶,合成工艺简单,产品质量稳定,粘接强度高,适用于聚氨酯与非金属材料之间的粘接,上述两种粘合剂均可在室温固化。     

FeSO_4对A—O工艺处理印染废水效果的影响

采用在水解酸化池投加FeSO4的方法来对"水解酸化—好氧氧化"(A—O)工艺进行改进。对比了水解酸化池有无投加FeSO4时,A—O工艺系统的运行结果,同时研究了FeSO4投加量对A—O工艺处理效果的影响。结果表明,投加了FeSO4的COD和色度的去除效果均好于未投加FeSO4的,当进水水质为COD 653mg/L、色度480倍、pH=9.2、水解酸化池的反应时间为7h、FeSO4投加量为30mg/L时,去除效果最佳,再经好氧反应器处理7h后,出水水质为COD 88mg/L、色度52倍。     

中—低—低变换流程应用总结

中—低—低变换工艺具有操作简便、蒸汽耗量低、触媒使用寿命长的特点。将中变串低变工艺改为中—低—低工艺后,满足了合成氨扩产的需要     

气浮—反相破乳—IC塔处理高浓度油脂废水

酸化和水洗过程中产生的油脂废水有机物浓度高、含油量高、硫酸根含量高、成分复杂、pH不稳定、色度高,必须经过处理才可以排放.采用气浮—反相破乳—IC塔工艺处理高浓度油脂废水,处理效果好、成本低、工艺运行安全性高.处理后出水能够达到《污水综合排放标准》(GB 8978-1996)的三级标准,可直接排入城市污水管网.     

气浮—水解酸化—好氧工艺处理化妆品废水工程应用

化妆品企业排放的生产废水成分复杂、表面活性剂浓度较高且有一定毒性,针对该类高浓度有机废水,采用气浮—水解酸化—好氧组合工艺进行处理,工程实践表明:当进水COD为9 000 mg/L左右、系统维持相对稳定的情况下,出水水质达到《污水综合排放标准》(GB 8978—1996)的一级标准要求。     

生物流化床—高级催化氧化工艺处理制药废水

采用生物流化床—高级催化氧化工艺处理制药废水,介绍了制药废水处理工程的工艺流程、工艺设计、调试方法、处理效果和工程效益。运行结果表明,该系统处理效果好且运行稳定,出水水质满足《混装制剂类制药工业水污染物排放标准》(GB 21908—2008)表2标准。     

防止液态2—乙基—4—甲基咪唑结晶的方法

<正>2—乙基—4—甲基咪唑(2E4MI)除具备一般咪唑类固化剂的优点外,还能在常温下以过冷液体的状态出现,实际上它的溶点是45℃.由于呈液态,它与环氧树脂和酸酐类固化剂的混溶性好,工艺操作甚为方便.这也正是它作为环氧树脂固化剂或促进剂而受到高度评价的一个重要原因.但从热力学角度看,液体的过冷态不能算真正相平衡态,是不稳     

防护—装饰性镍铁合金电镀

苏联莫斯科化学工艺研究所提出一种可以得到含铁20-35％的防护装饰性镍铁合金镀层的电解液。一系列的研究表明,这种硫酸盐—氯化物槽具有整平性能好,镀层光亮的特征。所得防护—装饰性镀层具有较低的内应力,足够高的微观硬度和令人满意的腐蚀特性。     

ABS接枝聚合过程杂质产生原因分析

研究了吉林石化公司丙烯腈-丁二烯-苯乙烯(ABS)接枝聚合物中杂质的组成,对生产过程进行跟踪分析,研究杂质产生的原因。进而推断出凝聚干燥环节是杂质产生的主要部位,杂质为ABS接枝聚合物在空气中长期高温氧化而产生。加强日常清洗是控制杂质产生的有效方法。     

Si-Fe合金精炼-高温淬火-酸洗提纯硅

在Si-Fe合金体系中,采用高温淬火与酸洗复合精炼提纯硅,研究了淬火后硅料的微观形貌及复合提纯效果. 结果表明,硅料中杂质元素总去除率淬火前为76.82%,淬火后为96.05%. 随淬火温度升高,硅料中杂质元素的去除效果逐渐增强,1007, 1207, 1220℃下淬火的硅料杂质元素总去除率分别为91.87%, 95.19%和96.05%. 冷却速率为3℃/min时淬火后硅料中杂质元素的总去除率为96.05%,而9.5℃/min冷却速率下总去除率为94.21%.     

Removal of organic impurities with activated carbons for ultra-pure hydrogen peroxide preparation

The aim of this research was to select suitable activated carbon (AC) for effective removal of organic impurities from industrial aqueous hydrogen peroxide solution to produce ultra-pure hydrogen peroxide. The textural parameters and surface chemistry of four kinds of AC samples were measured and analyzed. Static and dynamic equilibrium adsorption experiments were carried out to compare the effect of AC on organic impurities adsorption and hydrogen peroxide decomposition. The effects of AC pore structure and surface chemistry on the adsorption of organic impurities were investigated. The fitting operation conditions, i.e., operating temperature and AC dosage, were also examined. The results showed that AC adsorption capacity on organic impurities from industrial aqueous hydrogen peroxide solution was mainly influenced by micropore structure of AC, as well as decomposition of hydrogen peroxide. The pore size of 1–3 nm is most effective for adsorption of organic impurities. It was found that the organic impurities in industrial hydrogen peroxide solution could be reduced effectively to meet the standard of ultra-pure hydrogen peroxide of SEMI-C8 level with the proposed AC and adsorption techniques.     

锌酸盐镀锌液中的金属杂质及其对策

分析了锌酸盐镀锌液对金属杂质的敏感性.介绍了几种消除阳离子杂质的方法,如配位掩蔽法和沉淀去除法.讨论了乙二胺四乙酸、酒石酸钾钠、三乙醇胺等掩蔽剂的利弊,以及硫化钠沉淀法的可行性.指出了使用高纯度阳极的必要性.     

通信光纤原料SiCl4提纯方法

四氯化硅是生产石英通信光纤的主要原料,但粗四氯化硅中含有多种杂质,直接影响光纤的损耗特性。为保证光纤具有低损耗,必须对粗四氯化硅进行提纯,最大限度地脱除这些引起光纤吸收损耗的杂质。介绍了精馏法、吸附法、部分水解法及络合法等多种四氯化硅提纯方法,指出了各种方法的优缺点。     

Sublattice imbalance of substitutionally doped nitrogen in graphene

Motivated by the recently observed sublattice asymmetry of substitutional nitrogen impurities in CVD grown graphene, we show, in a mathematically transparent manner, that oscillations in the local density of states driven by the presence of substitutional impurities are responsible for breaking the sublattice symmetry. While these oscillations are normally averaged out in the case of randomly dispersed impurities, in graphene they have either the same, or very nearly the same, periodicity as the lattice. As a result, the total interaction energy of randomly distributed impurities embedded in the conduction-electron-filled medium does not vanish and is lowered when their configuration is sublattice-asymmetric. We also identify the presence of a critical concentration of nitrogen above which one should expect the sublattice asymmetry to disappear. This feature is not particular to nitrogen dopants, but should be present in other impurities.     

Effects of metallic and D2EHPA impurities on nickel electrowinning from aqueous sulphate baths

The presence of metallic and organic solvent impurities in pregnant electrolyte during hydrometallurgical processing causes problems in nickel electrowinning. To overcome these problems, a study on the combined effects of metallic and D2EHPA impurities, on nickel electrodeposition has been carried out. The effects of such impurities on deposit physical appearance, current efficiency, deposit contamination, crystallographic orientation and deposit morphology are discussed. Based on the experimental data and observations, it is possible to achieve smooth and perfect nickel sheet with reasonable current efficiency and purity from the contaminated leach liquors of nickel bearing raw materials being processed in the Regional Research Laboratory, Bhubaneswar. Moreover, the economy of the nickel electrowinning process can be improved by careful selection of experimental conditions.     

盐水质量对离子膜的影响及处理

介绍四平昊华化工有限公司对盐水中杂质的处理方法。     

EFFECT OF MAGNESIUM AND SULFATE IONS ON KCl CRYSTALLIZATION IN A CONTINUOUS COOLING MSMPR CRYSTALLI2:ER

Crystallizations of KCl from water and reagent grade potassium chloride solution with and without magnesium sulfate and magnesium chloride as impurities were conducted in a one liter continuous MSMPR cooling crystallizer. A series of experiments at a constant operating temperature, various feed temperatures and magnesium and sulfate ions concentrations were carried out to investigate the effect of the type and concentration of impurities on the width of the meta-stable zone, crystal size distribution, crystal habit, crystal purity, growth rate, nucleation rate, and aggregation index. The width of the meta-stable zone increased with impurity concentrations of both magnesium and sulfate ions alike. Sulfate ion increased the mean crystal size at all concentrations, whereas the initial increase in mean crystal size at low magnesium concentrations was moderated at higher concentrations. Polycrystals formation was significant with and without impurities. The crystal surface became irregular at higher sulfate ion concentrations. The impurity incorporation within KCl crystals decreased with crystal size and was much higher in the case of magnesium sulfate. Secondary nucleation rate was unaffected and growth rate was altered in the presence of both impurities, and the influence was apparently independent of the effect upon the meta-stable zone width. The effect of impurities was suppressed with increase in suspension density.     

氢还原后三氯氢硅的杂质控制

为控制还原后三氯氢硅中杂质含量,采用Aspen Plus模拟软件对还原后三氯氢硅提纯塔进行模拟计算,考察了提纯塔的进料量、回流量和采出量对还原后三氯氢硅中硼、磷杂质的影响,并结合实际生产探索还原后三氯氢硅中碳和金属杂质的控制措施。结果表明:降低提纯塔进料量,提高提纯塔回流量和采出量能有效降低还原后三氯氢硅中硼、磷杂质含量。对还原炉钟罩、基盘和备品备件进行合理的维护和选用,能有效控制氢还原后三氯氢硅中碳和金属杂质含量。