共查询到20条相似文献,搜索用时 31 毫秒
1.
Since 1995, a multidisciplinary team of researchers has deployed case study methodology to follow the progress of 12 discontinuous innovation projects in ten large R&D-intensive firms. The study has illuminated the challenges of managing the surprisingly difficult transition from R&D project to an operating unit in the eight of the 12 projects that reached transition. A substantial "readiness gap" existed between the project teams and the receiving business units. The challenges have been captured in the form of ten critical questions that must be addressed before a project can be successfully transitioned. Based on an analysis of transition practices, the authors identify seven propositions for improving the effectiveness of transition management suggesting the potential usefulness of the following managerial approaches: (1) conducting a transition readiness assessment; (2) assembling a transition team; (3) establishing an oversight board; (4) developing a transition plan; (5) providing transition funding from corporate sources; (6) laying the groundwork for a big market; and (7) engaging senior management champions. 相似文献
2.
In this paper we present a technique to statistically estimate transition delay and path delay fault coverage. The basic method is an extension of STAFAN to include delay faults. By partitioning a combinational circuit into non-overlapping fanout free logic cones, we accurately calculate the transition sensitization controllabilities of 0 1 and 1 0 transitions of the lines within a fanout free logic cone to the output of the fanout free logic cone for each fanout free logic cone. A strategy to calculate the transition observabilities of fanout stems is proposed. The detectability of a path delay fault is evaluated as the product of the observabilities of the input line to its head gate within each fanout free logic cone on the path multiplied by the transition controllability of the path. When compared with the fault simulations, the estimations of transition delay fault coverage are within 2.3%. Also, the technique gives reasonably good path delay fault coverage estimation for large fault set of the ISCAS85 benchmark circuits. 相似文献
3.
《IEEE transactions on circuits and systems. I, Regular papers》2009,56(5):997-1004
4.
《Electron Device Letters, IEEE》2009,30(4):343-345
5.
Data on the σ(T), R(T), and U(T) dependences in Ag2Te, Ag2Se, and Ag2S in the region of the phase transition are analyzed. It is found that the phase transition in Ag2Te is accompanied by a decrease in the electron concentration and this transition in Ag2Se is accompanied by an increase in this concentration. The concentration of intrinsic charge carriers in Ag2Te decreases by a factor of 4 as a result of the phase transition and increases by a factor of 2 in Ag2Se. The effect of variation in the energy-band parameters in the region of phase transition on the electron mobility is considered. It is established that, in Ag2Te and Ag2S, electrons are scattered by optical phonons in the region of the phase transition, while electrons are scattered by acoustic phonons in the α and β phases. It is assumed that the anomalously large increase in σ and U in Ag2S as a result of the phase transition is caused by an increase in the concentration n and a simultaneous decrease in σ g and m n * by a factor of about 2. 相似文献
6.
The paper deals with the problem of finite-time \(L_1\) control for positive Markovian jump systems with partly known transition rates. Firstly, by constructing a linear co-positive Lyapunov function, sufficient conditions for finite-time boundedness and \(L_1\) finite-time boundedness of the open-loop system are developed. Then, an effective method is proposed for the construction of the state feedback controller. These sufficient criteria are derived in the form of linear programming. A key point of this paper is to extend the special requirement of completely known transition rates to more general form that covers completely known and completely unknown transition rates as two special cases. Finally, two examples are given, which include a mathematical model of virus mutation treatment to illustrate the validity of the obtained results. 相似文献
7.
Differential thermal analysis (DTA) has been applied to the examination of a variety of glasses and glass-glass reactions.
The method is described and results that were obtained which illustrate the usefulness of the technique are shown.
Reversible and nonreversible latent heat anomalies have been observed in glass which are believed coincident with the glass
transition, phase separation, devitrification processes, and dissolution of crystalline phases. The heat effect believed to
be associated with the glass transition is reproducible, reversible and different for different glasses, and is observed as
an endotherm on heating and an exotherm upon cooling. The change in the thermal glass transition temperature (Tt) as a function of composition was found to be sensitive to within approximately a 1% variation of one of the constituents
of the glass enabling the determination of a "glass transition phase diagram" for two interacting glasses. The technique has
shown itself to be a useful tool in quality control of raw glasses and in monitoring glass forming processes. 相似文献
8.
A model for the transformation of SiC polytypes occurring during the growth of an epitaxial layer is suggested that is based on the variation over time of the concentration of carbon vacancies in a transition layer. Experimental data are analyzed in terms of this model. It is shown that the parameter η=Gτ/L T (L T is the thickness of the transition layer, G is the film growth rate, and τ is the lifetime of a vacancy in the transition layer) is invariant with respect to the method and temperature of the growth of the epitaxial layer. This parameter is determined only by the concentration of carbon vacancies in the substrate and in the film. 相似文献
9.
Fukuda Y. Casey P. Pecht M. 《Electronics Packaging Manufacturing, IEEE Transactions on》2003,26(4):305-312
This paper discusses the transition to lead-free electronics, with emphasis on Japanese companies. The results of reverse engineering two Japanese minidisk players with "green" labels are presented. The minidisk players analyzed were Sony's MZ-E909 and Matsushita's SJ-MJ-90-A. Both of the minidisk players had three circuit cards, which were analyzed using a variety of methods including EDS, WDS, and ICP-AES. Data resulting from these tests was included along with a discussion on its significance. Moreover, the two "green" minidisk players were compared in terms of solder compositions and lead-free implementation strategies. This study revealed that products bearing the "green" label were not necessarily lead-free, but rather conformed to one of many definitions of lead-free devices. It was also found that the Japanese approach for achieving lead-free products appears to be based on an incremental transition by application, even at the board level. 相似文献
10.
《Electron Devices, IEEE Transactions on》1977,24(5):547-551
Auger electron spectroscopy has been used in conjunction with argon-ion sputtering to study the morphology and chemical nature of MNOS structures. We find that a typical thin "oxide" in a memory device is a silicon oxynitride with about equal parts nitrogen and oxygen. The transition from nitride to "oxide" to silicon is a smooth one, with an oxide width of about 2.5-nm FWHM. 相似文献
11.
《Electron Devices, IEEE Transactions on》1969,16(5):455-457
An analysis of base widening and the current dependence of the cutoff frequency fT has been given previously [1]. The analysis is approximate and is based on the location of the edges of transition regions. Definition of transition regions becomes problematic in transistors having nonuniform base doping and for high-current densities. Such difficulties are avoided in this paper by use of the charge control approach. Numerical solutions of delay time (= 1/2pi f_{T} ) as a function of current density are given for low reverse collector bias. Whereas transition regions can be defined only approximately, the electric field is a well-defined quantity, and changes in the electric field that accompany base widening are shown in detail. At low injection levels, a high-field region exists near the transition between base and epitaxial layer. This high-field region is relocated to the interface between epitaxial layer and substrate under high injection conditions. When this "high-field relocation" has occurred, the epitaxial layer acts as an extension of the base with an attendant increase in the delay time [1]. 相似文献
12.
《Advanced Packaging, IEEE Transactions on》2008,31(3):527-535
13.
Certain compositions within the quaternary lead-lanthanum-titanate-zirconate (PLZT) system exhibit neither a "true" ferroelectric nor a "true" paraelectric behavior and are therefore best characterized as quasi-ferroelectric. The dielectric, hysteresis, and optical properties of quasi-ferroelectric PLZT ceramics have been investigated for the representative 9/65/35 composition which was prepared as a transparent ceramic by means of a two-stage sintering-densification process. The results of these studies suggest that the quasi-ferroelectric behavior of PLZT compositions between their Curie temperature and a transition temperature Tp is brought about by the existence of polar distorted microregions (polar short-range order). By applying an electric field a transition to a macroscopic ferroelectric (FE) state (polar long-range order) is enforced which is, however, not stable at zero field at T > Tp . This concept, which explains the experimental observations, is compared with the possibility of a FE to anti-FE phase transition at Tp . Attention is drawn to the quasi-static memory behavior of this type of material that can be realized by disconnecting the sample in its ON state from the voltage source and which might enlarge the scope of applications of quasi-ferroelectric PLZT ceramics. 相似文献
14.
《Microwave and Wireless Components Letters, IEEE》2009,19(6):413-415
15.
《Components and Packaging Technologies, IEEE Transactions on》2008,31(3):527-535
16.
《Very Large Scale Integration (VLSI) Systems, IEEE Transactions on》2010,18(2):246-255
17.
Jean -Michel Fourneau Leïla Kloul Nihal Pekergin Franck Quessette Véronique Veque 《电信纪事》1994,49(5-6):337-349
The stochastic automata networks formalism is an attractive technique to model complex systems with interacting components. Each component of the system is modelled by a single automaton; interactions between components are modelled by labels on the arcs which may represent synchronization and state-dependent transitions. Every automaton is associated with some matrices which allow to build the transition matrix of the underlying Markov chain, using tensor algebra. To illustrate this methodology, we introduce two buffer policies which could be used inAtm switching node. Every policy manages two priority levels which have distinct cell loss requirements. The first buffer policy is based on the push-out mechanism : a high priority cell replaces a low priority cell when the buffer is full. The second policy causes the discarding of all the low priority cells when the user transmits a request to send a burst of cells. In both studies, we compute the loss probabilities of each type of cells under various assumptions. 相似文献
18.
Special features of electron spin resonance in the vicinity of the insulator-metal phase transition in n-type 4H-SiC:N were investigated. It was shown that, in the insulating state, an antiferromagnetic phase of the spin-glass type is formed in this region. As a result, with increasing doping level, the content of the paramagnetic phase decreases, and, at an impurity concentration close to critical (corresponding to the transition), the resonance line of nitrogen atoms disappears. Instead of it, a line of deep-level impurity centers is observed at the same position in the metallic state. In addition, two new lines are observed in the metallic state in strong fields; these lines are attributed to free charge carriers. 相似文献
19.
The exchange coupling of Fe centers in GaAs crystals is studied by electron spin resonance (ESR). Transitions to a superparamagnetic state and to an impurity ferromagnetism domain are analyzed. A study of a system of single-domain magnetically ordered regions in GaAs:Fe with the transition to a ferromagnetic state occurring at the temperature TC1 = 460 K is described. It is shown that impurity ferromagnetism with a transition temperature TC2 of 60 K in a disordered system of Fe centers randomly distributed among superparamagnetic regions exists in GaAs:Fe. 相似文献
20.
《Electron Devices, IEEE Transactions on》2009,56(8):1712-1720