Synthesis and pyrolysis of single-source precursor for HfCxN1-x-SiC ceramic with different SiC contents

A novel single-source precursor was synthesized to prepare HfC_xN_1-x/SiC multiphase ceramics by using hafnium chloride (HfCl₄), diallylamine (DAA) and polycarbosilane (PCS). We conducted an investigation of the synthesis process, polymer-to-ceramic conversion, as well as the microstructure and phase evolution of HfC_xN_1-x/SiC multiphase ceramics with different levels of SiC content. The results showed that the core-shell particles of HfC_xN_1-x-carbon were embedded homogeneously in the β-SiC matrix which is beneficial for preventing grain growth and improving oxidation resistance. Based on data from oxidation tests, the ceramics improved the oxidation temperature and remained stable at a high temperature (1500 °C) with oxidation layer formation on the surface. Due to the highly cross-linked structure without oxygen, high ceramic yield, homogeneous composition and excellent oxidation resistance of the pyrolysis product, the as-prepared precursor is a promising material for making high-performance composite ceramics.     

Microwave Absorption of SiC/HfCxN1−x/C Ceramic Nanocomposites with HfCxN1−x‐Carbon Core–Shell Particles

The dielectric properties of high‐temperature stable single‐source precursor‐derived SiC/HfC_xN_1?x/C ceramic nanocomposites are determined by microwave absorption in the X‐band (8.2–12.4 GHz) at room temperature. The samples synthesized at 1700°C, denoted as SiC/5HfC_xN_1?x/C‐1700°C and SiC/15HfC_xN_1?x/C‐1700°C ceramics, comprising ≈ 1.3 and ≈ 4.2 vol% HfC_xN_1?x, respectively, show enhanced microwave absorption capability superior to hafnium‐free SiC/C‐1700°C. The minimum reflection loss of SiC/5HfC_xN_1?x/C‐1700°C and SiC/15HfC_xN_1?x/C‐1700°C are ?47 and ?32 dB, and the effective absorption bandwidth amount to 3.1 and 3.6 GHz, respectively. Segregated carbon, including graphitic carbon homogeneously dispersed in the SiC matrix and less ordered carbon deposited as a thin film on HfC_xN_1?x nanoparticles, accounts for the unique dielectric behavior of the SiC/HfC_xN_1?x/C ceramics. Due to their large reflection loss and their high chemical and temperature stability, SiC/5HfC_xN_1?x/C‐1700°C and SiC/15HfC_xN_1?x/C‐1700°C ceramics are promising candidate materials for electromagnetic interference applications in harsh environment.     

Mechanical,Thermal, and Oxidation Properties of Refractory Hafnium and zirconium Compounds

The thermal conductivity, thermal expansion, Youngs Modulus, flexural strength, and brittle–plastic deformation transition temperature were determined for HfB₂, HfC_0·98, HfC_0·67, and HfN_0·92 ceramics. The oxidation resistance of ceramics in the ZrB₂–ZrC–SiC system was characterized as a function of composition and processing technique. The thermal conductivity of HfB₂ exceeded that of the other materials by a factor of 5 at room temperature and by a factor of 2·5 at 820°C. The transition temperature of HfC exhibited a strong stoichiometry dependence, decreasing from 2200°C for HfC_0·98 to 1100°C for HfC_0·67 ceramics. The transition temperature of HfB₂ was 1100°C. The ZrB₂/ZrC/SiC ceramics were prepared from mixtures of Zr (or ZrC), SiB₄, and C using displacement reactions. The ceramics with ZrB₂ as a predominant phase had high oxidation resistance up to 1500°C compared to pure ZrB₂ and ZrC ceramics. The ceramics with ZrB₂/SiC molar ratio of 2 (25 vol% SiC), containing little or no ZrC, were the most oxidation resistant.     

High-temperature microstructural evolution of SiCN fibers derived from polycarbosilane with different C/N ratios

Research into the high-temperature microstructural evolution of SiCN ceramic fibers is important for the aerospace application of advanced ceramic matrix composites in harsh environments. In this work, we studied the microstructural evolution of SiCN fibers with different C/N ratios that derived from polycarbosilane fibers at the annealing temperature range of 1400∼1600 °C. These results showed that the phase separation of SiC_xN_y phase and the two-dimension grain growth process of free carbon nanoclusters could be processed at the researched temperature range. As the annealing temperature increased to 1600 °C, the crystallization of amorphous SiC and Si₃N₄ could be detected. SEM and Raman analysis showed that the decomposition and carbothermal reduction of the Si₃N₄ phase at high temperatures played primary roles in contributing to the fiber strength degradation. Thus, a higher C/N ratio, which is beneficial for inhibiting the decomposition of amorphous Si₃N₄, helps SiCN fibers retain high tensile strength at high temperatures.     

Oxidation of HfB2–SiC ceramics under static and dynamic conditions

The kinetics and the mechanism of oxidation of ceramics based on HfB₂ and SiC, manufactured by elemental self-propagating high-temperature synthesis followed by hot pressing were investigated. The synthesis product contained HfC_(x) and HfO₂ as impurity phases. Depending on the ratio between the main components, the samples were characterized by high structural and chemical homogeneity, porosity of 3–6 vol%, hardness up to 29 GPa, bending strength of 500–600 MPa, fracture toughness of 5.6–8.9 MPa × m^1/2, and thermal conductivity of 86.0–89.7 W/(m × K). The oxidation was performed under static conditions at 1650 °C and upon exposure to a high-enthalpy gas flow. A dense layer consisting of HfO₂/HfSiO₄ grains formed on the surface of the ceramics during both oxidation conditions; the space between the grains was filled with amorphous SiO₂–B₂O₃. The best heat resistance was observed for the ceramics with 16 wt% SiC for static conditions and 8 wt% SiC for gas-dynamic conditions.     

Mechanical Properties and Microstructural Characterization of Amorphous SiCxNy Thin Films After Annealing Beyond 1100°C

The effect of thermal annealing on structure and mechanical properties of amorphous SiC_xN_y (y ≥ 0) thin films was investigated up to 1500°C in air and Ar. The SiC_xN_y films (2.2–3.4 μm) were deposited by reactive DC magnetron sputtering on Si, Al₂O₃ and α‐SiC substrates without intentional heating and at 600°C. The SiC target with small excess of carbon was sputtered at various N₂/Ar gas flow ratios (0–0.48). The nitrogen content in the films changes in the range 0–43 at.%. Hardness and elastic modulus (nanoindentation), change in film thickness, film composition, and structure (Raman spectroscopy, XRD) were investigated in dependence on annealing temperature and nitrogen content. All SiC_xN_y films preserve their amorphous structure up to 1500°C. The hardness of all as‐deposited and both air‐ and Ar‐annealed SiC_xN_y films decreases with growth of nitrogen content. The annealing in Ar at temperatures of 1100°C–1300°C results in noticeable hardness growth despite the ordering of graphite‐like structure in carbon clusters in nitrogen free films. Unlike the SiC, this graphitization leads to hardness saturation of SiCN films starting above 900°C, especially for films with higher nitrogen content (deposited at higher N₂/Ar). This indicates the practical hardness limit achievable by thermal treatment for SiC_xN_y films deposited on unheated substrates. The ordering in carbon phase is facilitated by the presence of nitrogen in the films and its extent is controlled by the N/C atomic ratio. The suppression of graphitization was observed for N/C ranging between 0.5–0.7. Films deposited at 600°C show higher hardness and oxidation resistance after annealing in comparison with those deposited on unheated substrates. Hardness reaches 40 GPa for SiC and ~28 GPa for SiC_xN_y (35 at.% of nitrogen). Such a high hardness of SiC film stems from its partial crystallization. Annealing of SiC_xN_y film (35 at.% of N) in Ar at 1400°C is accompanied by formation of numerous hillocks (indicating heterogeneous structure of amorphous films) and redistribution of film material.     

Enhanced high-temperature strength of HfB2–SiC composite up to 1600°C

Using B₄C and C additives, a HfB₂–SiC composite with an enhanced strength up to 1600?°C was prepared using high-energy ball milling followed by hot pressing. The composite microstructure comprised equiaxed large HfB₂ and fine SiC grains and an intergranular amorphous phase. The mechanical behaviour of the composite was evaluated up to 1600?°C via a four-point bending test. At or below 1500?°C, only a linear stress–strain response was observed. At 1600?°C, however, the initial linear response was followed by nonlinear deformation behaviour. The flexural strength was constant between room temperature and 1400?°C; subsequently, the flexural strength significantly increased with increasing temperature up to 1600?°C, with strengths in the range of 650–750?MPa.     

Microstructure and dielectric properties of compositionally graded Ba1-xSrxTiO3 multilayer tunable capacitors

Li₂O/B₂O₃-added Ba_1-xSr_xTiO₃ (B_1-xS_xT) ceramics, where 0.2 ≤ x ≤ 0.35, were well densified at 920 °C with pure perovskite structure. The dielectric constant, tunability, and figure of merit (FOM) of B_1-xS_xT ceramics increased with x because of the decreasing Curie temperature (T_C). The specimen with x = 0.35, whose T_C was close to room temperature, exhibited a large tunability of 27.4 % and FOM of 110 at 10 kV/cm. A compositionally graded multilayer (CGML), which was sintered at 920 °C, was fabricated using B_1-xS_xT thick films to produce a temperature-stable tunable capacitor, and it evinced a dense microstructure and a continuous interface between the B_1-xS_xT thick film and the Ag electrode. This CGML capacitor showed a large tunability (51 %) and FOM (150) at 20 kV/cm. It also exhibited stable tunability (17–28 % at 10 kV/cm) at temperatures between 30–90 °C. Therefore, the B_1-xS_xT CGML capacitor is a suitable candidate for temperature-stable tunable capacitors.     

Synthesis,Characterization, and Microstructure of Hafnium Boride‐Based Composite Ceramics Via Preceramic Method

The ceramic precursor for HfB₂/HfC/SiC/C was prepared via solution‐based processing of polyhafnoxanesal, linear phenolic resin, boric acid and poly[(methylsilylene)acetylene)]. The obtained precursor could be cured at 250°C and subsequently heat treated at relative lower temperature (1500°C) to form HfB₂/HfC/SiC/C ceramic powders. The ceramic powders were characterized by element analysis, thermal gravimetric analysis, X‐ray diffraction, Raman spectroscopy, and Scanning electron microscopy. The results indicated that the ceramic powders with particle size of 200~500 nm were consisted of pure phase HfB₂, HfC, and SiC along with free carbon as fourth phase with low crystallinity.     

Microstructure and ablation behaviour of a strong,dense, and thick interfacial ZrxHf1-xC/SiC multiphase bilayer coating prepared by a new simple one-step method

In order to solve the shortcomings of chemical vapour deposition (CVD), such as CVD-prepared coatings that are weakly bound to the carbon base, Zr_xHf_1-xC/SiC multiphase bilayer ceramic coatings were prepared on substrate surfaces by slurry brushing and the one-step in-situ thermal evaporation reaction method. The coating exhibits multiphase bilayer characteristics due to the self-diffusion of the matrix carbon source and the self-assembly of gaseous Zr and Si with the matrix. The 200-μm-thick Zr_xHf_1-xC solid-solution phase is distributed on the outer coating layer, while the 100-μm-thick SiC phase is distributed in the inner layer such that it contacts the substrate. The coating prepared by brushing with Hf and vapour-deposited with a masterbatch containing 7:3 (w/w) Zr:Si (H-ST) exhibits excellent ablation resistance, attributable to the presence of dense and spallation-free oxide scale and the low oxygen diffusion coefficient of (Zr, Hf)C_yO_z.     

Investigations on the thermal behaviours of SiC-ZrC continuous ceramic fibres

In this study, nanoscale composite SiC-ZrC ceramic fibres, derived from polyzirconocenecarbosilane (PZCS) via melt spinning, electron beam crosslinking, pyrolysis and sintering were investigated in detail. Compared with several commercial products of second-generation SiC fibres, the produced composite fibres exhibit improved thermal stability, mechanical properties and oxidation resistance. SiC grains in the fibre grew from 9.8 nm to 33.9 nm after annealing in an inert atmosphere at 1800 °C for 1 h, as well as decomposition of the SiC_xO_y phase and the growth of SiC grains affected the mechanical properties of the fibres, and the mechanical properties of the fibres were maintained at 1.1 GPa, accompanied by an increase in the modulus. After the fibres were oxidized at 1100～1400 °C for 1 h, a dense oxide layer of SiO₂-ZrO₂ was formed on the surface of the fibres, which slowed down the rate of further fibre oxidation, thus, the fibres exhibited excellent oxidation resistance.     

Role of boron addition on phase composition,microstructural evolution and mechanical properties of nanocrystalline SiBCN monoliths

Nanocrystalline SiBCN monoliths with the same Si/C/N mole ratio and various boron additions ranged from 0 to 3.0 mol were prepared by mechanical alloying plus reactive hot pressing methods. Correction of boron content and microstructural/morphological evolution was investigated in detail by XRD, SEM, TEM and STEM-EDX structure characterization. Except for SiC and BN(C), boron addition contributes to B_xC formation. Besides, boron addition promotes the crystallization of SiC, leading to the formation of poor crystallinity of spherical structures in inner SiC. Furthermore, boron addition significantly promotes the grain growth of SiC and B_xC and therefore increases the relative volume ratios of B_xC/BN(C) and B_xC/SiC. Amorphous-like BN(C) changes to belt-like structures as boron addition increases. The new formed B_xC effectively contributes to the improvement of Vicker’s hardness while pull-out of BN(C) belt-like structures benefits the fracture toughness.     

Enhanced piezoelectric properties and electrical resistivity in W/Cr co-doped CaBi2Nb2O9 high-temperature piezoelectric ceramics

W/Cr co-doped Aurivillius-type CaBi₂Nb_2-x(W_2/3Cr_1/3)_xO₉ (CBN) (x?=?0.025, 0.050, 0.075, 0.100, and 0.150) piezoelectric ceramics were prepared by the conventional solid-state reaction method. The crystal structure, microstructure, dielectric properties, piezoelectric properties, and electrical conductivity of these ceramics were systematically investigated. After optimum W/Cr modification, the CBN ceramics showed both high d₃₃ and T_C. The ceramic with x?=?0.1 showed a remarkably high d₃₃ value of ~15 pC/N along with a high T_C of ~931?°C. Moreover, the ceramic also showed excellent thermal stability evident from the increase in its planar electromechanical coupling factor k_p from 8.14% at room temperature to 11.04% at 600?°C. After annealing at 900?°C for 2?h, the ceramic showed a d₃₃ value of 14?pC/N. Furthermore, at 600?°C, the ceramic also showed a relatively high resistivity of 4.9?×?10⁵ Ω?cm and a low tanδ of 9%. The results demonstrated the potential of the W/Cr co-doped CBN ceramics for high-temperature applications. We also elucidated the mechanism for the enhanced electrical properties of the ceramics.     

Controlled nitrogen content synthesis of hafnium carbonitride powders by carbonizing hafnium nitride for enhanced ablation properties

In this study, a new method of carbonizing hafnium nitride was proposed to synthesize ultrahigh-temperature hafnium carbonitride (HfC_xN_y) powders. The new method helps to maintain both the purity of phases and control the content of nitrogen in the HfC_xN_y. The results show that the as-prepared HfC_xN_y powders have a single phase, with an average particle size of approximately 2 $\mu m$, and Hf, C and N are evenly distributed. Moreover, the microstructures, phase compositions, ablation properties and mechanism of the HfC_0.62N_0.38 composites under a plasma ablation environment were studied in detail. The results show that the HfC_0.62N_0.38 composites exhibited excellent ablation resistance at 3073 K for 60 s and the ablation mechanism of HfC_0.62N_0.38 can be identified as HfC_0.62N_0.38→HfC_xO_y→HfO₂. The mass ablation rate of the HfC_0.62N_0.38 composite is evaluated to be 1.36 mg/cm²∙s, which is lower than that of HfC ceramics. Our work is intended to provide new insight regarding the development of ultrahigh-temperature ceramics and widen their applications.     

Preparation of self-healing Cf/SiBCN(O) composite using a novel polyborosilazane

In this study, novel polyborosilazane-derived SiBCN(O) ceramic was used as self-healing component in self-healing C_f/SiBCN(O) composite, which was prepared by polymer infiltration and pyrolysis (PIP) process. Molecular-level structure design of boron-containing ceramic precursors was utilized to achieve uniform dispersion of boron-containing self-healing components in prepared composites. No elemental diffusion was observed at the interface of ceramic matrix and carbon fibers, which resulted in stable SiBCN(O) structure. In addition, boron was uniformly distributed in C_f/SiBCN(O) composite ceramic matrix, which was beneficial for self-healing of cracks. Cracks and indentations were able to heal at high temperatures in air. The best crack-healing behavior occurred in air atmosphere at 1000 °C, with nearly complete crack healing. This excellent self-healing behavior was achieved because silicon and boron atoms in SiBCN(O) ceramic reacted with available oxygen at high temperatures to form SiO₂(l), B₂O₃(l), and B₂O₃·xSiO₂ liquid phases, which effectively filled cracks. In general, as-prepared C_f/SiBCN(O) composite exhibited excellent self-healing properties and shows great application potential in high-temperature environment applications such as aviation, aerospace, and nuclear power.     

Making lightweight SiC(rGO,xMoSi2) bulk ceramics via polymeric precursor route

Unique properties of MoSi₂ open new opportunities for preparing bulk polymer-derived ceramics (PDCs) displaying favorable structural-functional capabilities. Herein, an ingenious production route via re-pyrolysis process of ball-milling-induced rigid SiC(rGO, xMoSi₂)_p fillers/flexible polycarbosilane-vinyltriethoxysilane-graphene oxide (PCS-VTES-GO, PVG) precursors blends is proposed to obtain in situ formed SiC(rGO, xMoSi₂) bulk PDCs. Interestingly, the possible dense β-SiC/SiOxCy/C_free(rGO, xMoSi₂) framework suffers load and tiny microsized pores relaxes stress, which is beneficial to providing optimized hardness and fracture toughness, ceramic yield, and linear shrinkage. Attractively, MoSi₂ prominently enhances thermal and electrical conductivities of the products owing to increased continuity and compactness. To the best of our knowledge, lightweight SiC(rGO, 20%MoSi₂) bulk PDCs own brilliant ceramic yield (92.13%), liner shrinkage (6.69%), hardness (10.34 GPa), fracture toughness (4.35 Mpa·m^1/2), and thermal conductivity (8.57 W·m^–1·K^–1), opening potential emerging uses in aerospace fields.     

Ablation resistant ZrC coating modified by polymer-derived SiC/TiC nanocomposites for ultra-high temperature application

To improve the ablation resistance of ZrC coating on SiC-coated carbon/carbon composites above 2000 °C, SiC/TiC nanocomposites (SiC/TiC-NCs) powders derived from single-source precursor were incorporated into ZrC coating, denoted as ZrC-SiC/TiC-NCs, via supersonic atmospheric plasma spraying (SAPS). After SAPS, the incorporated SiC/TiC-NCs evolved into TiC/(SiC and Zr_xTi_yC) embedded in amorphous SiC. The ablation resistance of the ZrC-SiC/TiC-NCs coating was evaluated by oxyacetylene flames with a heat flux of 4.18 MW/m². For comparison, the ZrC-SiC-NCs coating without Ti modification was seriously damaged due to rapid gas denudation. The good ablation resistance of ZrC-SiC/TiC-NCs coating is mainly attributed to the distinctive “capsule-like” multi-crystalline microstructure of SiC/TiC-NCs. During ablation, TiO₂ and Zr_xTi_yO₂, due to the oxidation of TiC and Zr_xTi_yC, contributed to the formation of Zr-Ti-Si-O glass with high viscosity and low evaporation pressure, improving the ablation resistance.     

Densification,microstructure, and mechanical properties of V-substituted HfB2-based ceramics

This study firstly developed Hf_1-xV_xB₂ (x = 0, 0.01, 0.02, 0.05) powders, which were derived from borothermal reduction of HfO₂ and V₂O₅ with boron. The results revealed that significantly refined Hf_1-xV_xB₂ powders (0.51 μm) could be obtained by solid solution of VB₂, and x ≥ 0.05 was a premise. However, as the content of V-substitution for Hf increased, Hf_1-xV_xB₂ ceramics sintered by spark plasma sintering at 2000 °C only displayed a slight densification improvement, which was attributed to the grain coarsening effect induced by the solid solution of VB₂. By incorporating 20 vol% SiC, fully dense Hf_1-xV_xB₂-SiC ceramics were successfully fabricated using the same sintering parameters. Compared with HfB₂-SiC ceramics, Hf_0.95V_0.05B₂-20 vol% SiC ceramics exhibited an elevated and comparable value of Vickers hardness (23.64 GPa), but lower fracture toughness (4.09 MPa m^1/2).     

Comprehensive oxidation mechanisms of heterogeneous laminated HfB2–SiC/Ti ceramics under oxyacetylene conditions

A laminated HfB₂–SiC/Ti ceramic prepared via tape casting and spark plasma sintering was characterized upon an oxyacetylene torch test at 2040 ℃. The volatility diagram for the binary HfB₂–SiC system was established along with the detailed ablation microstructure of the upper surface to investigate the ablation behavior of the samples. In addition, the mass (8.93 mg/s) and linear ablation rate (1.22 µm/s) of the laminate are ascribed to the strong oxidation protection of the Ti interlayer by the dense SiO₂ coating on the side surface, retarding the occurrence of oxidation weight loss and exfoliation at the interface. The corresponding oxidation behavior is proposed.     

B4C/SiC ceramic hollow microspheres prepared by slurry-coating and precursor conversion method

In this work, a new approach to fabricate B₄C/SiC ceramic hollow microsphere was established through combination of slurry-coating and precursor conversion method. Firstly, different slurries were prepared using modified B₄C powder with addition of PCS and LPCS. Subsequently, slurry was coated on a POM microsphere, followed by crosslinking, POM decomposition and heat-treatment at 1100 °C. Finally, the B₄C/SiC hollow microspheres with average diameter of 1.6–1.9 mm and thickness of 10–60 μm were obtained. The roughness (Ra) of outer surface was as low as 40.3 nm with high sphericity of 99.6%. Deoxidation was also explored by heat treatment at 1700 °C. The oxygen content was decreased from 11.06 wt.% to 0.37 wt.%, and crush load was promoted from 1.73 N to 4.50 N. The preparative method of B₄C/SiC ceramic hollow microspheres in this work can be easily extended for large-scale production.