RF磁控溅射制备AZO透明导电薄膜及其性能

室温下采用RF磁控溅射技术在石英衬底E制备了多晶ZnO:Al(AZO)透明导电薄膜,通过XRD,AFM,AES,Hall效应及透射光谱等测试研究了RF溅射功率、氩气压强对薄膜的结构、电学和光学性能的影响.分析表明:在最优条件下(溅射功率为250W,氩气压强为1.2Pa时),180nm AZO薄膜的电阻率为2.68×10-3 Ω·cm,可见光区平均透射率为90%,适合作为发光二极管和太阳能电池的透明电极.所制备的AZO薄膜具有c轴择优取向,晶粒问界中的O原子吸附是限制薄膜电学性能的主要因素.     

RF磁控溅射功率对ZnO:Al薄膜结构和性能的影响

采用RF磁控溅射技术以ZnO:Al2O3(2 wt%Al2O3)为靶材在石英玻璃衬底上制备多晶ZnO:Al(AZO)薄膜,通过XRD、AFM、AES以及Hall效应、透射光谱、折射率等手段研究了RF溅射功率(50～300 W)对薄膜的组织结构和电学,光学性能的影响.分析表明:所制备的AZO薄膜具有c轴择优取向,并且通过对不同功率下薄膜载流子浓度与迁移率的研究发现对于室温下沉积的AZO薄膜,晶粒间界中的O原子吸附是影响薄膜电学性能的主要因素.同时发现当功率为250 W时薄膜的电阻率降至最低(3.995×10-3 Ω·cm),可见光区平均透射率为91%.     

RF磁控溅射功率对ZnO：AI薄膜结构和性能的影响

采用RF磁控溅射技术以ZnO2Al2O3（2wt％Al2O3）为靶材在石英玻璃衬底上制备多晶ZnO：Al（AZO）薄膜,通过XRD、AFM、AES以及Hall效应、透射光谱、折射率等手段研究了RF溅射功率（50-300w）对薄膜的组织结构和电学,光学性能的影响。分析表明：所制备的AZO薄膜具有c轴择优取向,并且通过对不同功率下薄膜载流子浓度与迁移率的研究发现对于室温下沉积的AZO薄膜,晶粒间界中的O原子吸附是影响薄膜电学性能的主要因素。同时发现当功率为250W时薄膜的电阻率降至最低（3．995×10^-33Ω·cm）,可见光区平均透射率为91％。     

沉积条件对室温下磁控溅射AZO薄膜微结构与光电性能的影响

通过控制室温下射频磁控溅射过程中不同的氩气工作气压、溅射功率和沉积时间,在石英玻璃上沉积Al掺杂ZnO（AZO）薄膜,探究了三种工艺条件对制备的AZO薄膜的微结构及光电性能的影响。所制备的AZO薄膜经500℃退火后均为六方纤锌矿结构,具有优异的透明度,在可见光范围内的平均透过率均在86%以上。在气压0.25 Pa、功率200 W下,溅射时间为10 min时,薄膜的电阻率低至5.04×10^-3Ω·cm,而溅射时间为15 min时,Haacke性能指数最优,为0.314×10^-3Ω^-1。结果表明,磁控溅射制备的AZO薄膜的晶体结构、方阻和透过率等特性与制备过程中的气压、功率和时间密切相关,通过评价性能指数可指导优化AZO薄膜的制备工艺。     

射频磁控溅射法制备掺锆氧化锌透明导电薄膜

利用射频磁控溅射法在室温下制备出了掺锆氧化锌(ZnO∶Zr)透明导电薄膜。研究了溅射压强对ZnO∶Zr薄膜表面形貌、结构、光学和电学性能的影响。结果表明:ZnO∶Zr薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向,溅射压强对薄膜电阻率有显著影响,压强为1.5Pa时,电阻率具有最小值1.77×10–3Ω·cm。所制备的ZnO∶Zr薄膜具有良好的附着性能,在可见光区平均透过率超过93%。     

溅射功率对PET衬底上ZnO:Zr薄膜性能的影响

采用直流磁控溅射法在室温下柔性PET衬底上制备出了高质量的掺锆氧化锌(ZnO:Zr)透明导电薄膜。研究了溅射功率对ZnO:Zr薄膜表面形貌、结构、电学和光学性能的影响。溅射功率对ZnO:Zr薄膜的电阻率影响显著:当溅射功率从60W增加到90W时,薄膜的电阻率先减小后增大,在最佳功率80W时,电阻率具有最小值3.67×10-3Ω·cm。所制备的ZnO:Zr薄膜具有良好的附着性能,在可见光区平均透射率高达90%。     

射频溅射法生长ZnO薄膜的参数研究

以ZnO陶瓷为溅射靶材,通入纯氩气,使用射频溅射法在玻璃基片上制备ZnO薄膜,研究了气体压强、基片温度、溅射功率等对薄膜性质的影响。通过XRD及原子力显微镜(AFM)等检测得出制备C轴(002)ZAO薄膜的最佳工艺条件为:溅射压强0.4Pa;溅射功率200W;基片温度300℃。     

溅射压强对柔性PET衬底ZnO薄膜性能的影响

利用直流磁控溅射法,在室温水冷柔性PET衬底上成功制备出了掺钛氧化锌(ZnO:Ti,TZO)透明导电薄膜。通过X射线衍射(XRD)研究了薄膜的结构,用扫描电镜(SEM)研究了薄膜的表面形貌,用四探针和紫外-可见分光光度计等仪器对薄膜的特性进行测试分析,研究了溅射压强对ZnO:Ti薄膜表面结构、形貌、力学、电学和光学性能的影响。结果表明,溅射压强对PET衬底上的TZO薄膜的性能有显著的影响,实验制备的ZnO:Ti薄膜为具有C轴择优取向的六角纤锌矿结构的多晶薄膜;当溅射压强从2Pa增加到4Pa时,薄膜的电阻率由10.87×10-4Ω.cm快速减小到4.72×10-4Ω.cm,随着溅射压强由4Pa继续增大到6Pa,薄膜的电阻率变化平缓,溅射压强为5Pa时薄膜的电阻率最小,为4.21×10-4Ω.cm;经计算得到6Pa时样品薄膜应力最小,为0.785 839GPa;所有样品都具有高于91%的可见光区平均透过率。     

AZO透明导电薄膜的制备

采用射频磁控溅射法在玻璃衬底上制备了ZnO:Al(AZO)透明导电薄膜,并借助XRD、SEM等表征方法,研究了溅射功率和衬底温度对薄膜结构、表面形貌及光电特性的影响。结果表明,制备薄膜的最佳溅射功率和衬底温度分别为180 W、200℃,在此条件下制备的AZO薄膜具有明显的c轴(002)择优取向,其最低方块电阻为18/□,在可见光范围内的平均透光率超过91%,且透明导电性能优于目前平板显示器的要求,有望取代现在市场上的主流氧化铟锡(ITO)薄膜。     

透明导电薄膜ZnO∶Zr的制备及特性研究

利用直流磁控溅射法在玻璃衬底上制备出了可见光透过率高、电阻率低的ZnO∶Zr(ZZO)透明导电薄膜.讨论了溅射功率对ZZO薄膜结构、形貌及光电性能的影响.研究结果表明,溅射功率对ZZO薄膜的结构和电学性能有很大影响.实验制备的ZZO薄膜为六角纤锌矿结构的多晶薄膜,且具有垂直于衬底方向的c轴择优取向.在溅射功率为115 W时,ZZO薄膜的电阻率具有最小值1.9×10-3 Ω*cm,其霍尔迁移率和载流子浓度分别为18.7 cm2*V-1*s-1和2.07×1020 cm-3.所制备ZZO薄膜样品具有良好的附着性能,其可见光区平均透过率均超过92%.     

Ti,W,Mo,TiW膜的阻挡性能比较

介绍了Ｔｉ－Ａｕ，Ｔｉ－Ｗ－Ｐｔ－Ａｕ，Ｍｏ－Ａｕ，ＴｉＷ－Ａｕ，ＴｉＷ－Ｐｔ－Ａｕ等多种金属膜分别在４００，４２５，４５０，４７５和５００℃，３０分钟等时退火后的显微镜观察结果和典型样品的俄歇能谱分析结果。结果表明，Ｔｉ由于在Ａｕ中扩散太快，阻挡性能较差，而Ｗ，Ｍｏ，ＴｉＷ都有较好的阻挡性能。结合实际应用，ＴｉＷ－Ｐｔ－Ａｕ应是硅微波功率管的金属化的较佳选择。     

Ti-Al共掺ZnO薄膜的应力、结构和光电性能研究

利用直流磁控溅射工艺,在水冷玻璃衬底上成功沉积出了高透光、低电阻率的Ti-Al共掺ZnO(TAZO)透明导电薄膜.X射线衍射(XRD)研究结果表明,TAZO薄膜为具有c轴择优取向的六角纤锌矿结构多品薄膜.研究了TAZO薄膜的应力、结构以及光电性能与薄膜厚度的关系,结果表明.当薄膜厚为531 nm时,薄膜晶格畸变最小,具...     

Growth, structure, and morphology of TiO2 films deposited by molecular beam epitaxy in pure ozone ambients

TiO₂ films were grown using a reactive molecular beam epitaxy system equipped with high-temperature effusion cells as sources for Ti and an ozone distillation system as a source for O. The growth mode, characterized in-situ by reflection high-energy electron diffraction (RHEED), as well as the phase assemblage, structural quality, and surface morphology, characterized ex-situ by X-ray diffraction and atomic force microscopy (AFM), depended on the choice of substrate, growth temperature, and ozone flux. Films deposited on (1 0 0) surfaces of SrTiO₃, (La_0.27Sr_0.73)(Al_0.65Ta_0.35)O₃, and LaAlO₃ grew as (0 0 1)-oriented anatase. Both RHEED and AFM indicated that smoother surfaces were observed for those grown at higher ozone fluxes. Moreover, while RHEED patterns indicated that anatase films grown at higher temperatures were smoother, AFM images showed presence of large inclusions in these films.     

NPB和5，6，11，12-四苯基四苯并在薄膜中的发光和能量传递

能量传递是发光材料中的重要现象。本文使用时间分辨光谱和发射光谱对ＮＰＢ（二胺衍生物）掺Ｒｕｂｒｅｎｅ（５，６，１１，１２－四苯基四苯并）有机薄膜的能量传递过程进行了研究，建立了动力学方程，得到了与实验值相拟合的结论。找到了产生白光的最佳掺杂比。然后制成带锁定层结构为ＩＴＯ／ＣｕＰｃ／ＮＰＢｌ：Ｒｕｂｒｅｎｅ／ＴＰＢｉ／Ａｌｑ／Ｍｇ：Ａｇ薄膜电致发光器件，结果却得不到白光发射，说明能量传递过程在电场     

电视、激光、中波红外多波段增透膜研究

针对多光谱成像中存在的多光谱共光路问题,在ZnSe基底上设计了三波段增透膜。通过选取合适的薄膜材料,利用TFCalc膜系设计软件对膜系进行设计与优化,使用热蒸发和离子源轰击结合的方式沉积膜层,采用分光光度计和傅里叶红外光谱仪测量光谱特性。通过设计粘结层与保护层,有效提高了膜层与基底之间的结合力以及膜层的强度。该膜层可以实现多光谱ZnSe基底在电视（500~800 nm）、1064 nm激光和中波红外（3.7~4.8 μm）三个波段高效增透,且具有良好的环境适应性。     

迅速发展的LCVD技术

超低阈值电流的InGaAs激光二极管记录的低阈值电流—在原解理面InGaAs/AlGaAs激光器中为1mA,在镀高反射膜InGaAs/AlGaAs激光器中脉冲电流为0.25mA—在单量子阱结构中已经获得。     

Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping,Microstructure, and Charge Transport

Polymer doping of solution‐processed In₂O₃ with small amounts of the electron‐rich polymer, polyethylenimine (PEI), affords superior transistor performance, including higher electron mobility than that of the pristine In₂O₃ matrix. PEI doping of In₂O₃ films not only frustrates crystallization and controls the carrier concentration but, more importantly, acts as electron dopant and/or scattering center depending on the polymer doping concentration. The electron donating capacity of PEI combined with charge trapping and variation in the matrix film microstructure yields, for optimum PEI doping concentrations of 1.0%–1.5%, electron mobilities as high as ≈9 cm² V^?1 s^?1 on a 300 nm SiO₂ gate dielectric, an excellent on/off ratio of ≈10⁷, and an application optimal V _T. Importantly, these metrics exceed those of the pure In₂O₃ matrix with a maximum mobility ≈4 cm² V^?1 s^?1. Furthermore, we show that this approach is extendible to other oxide compositions such as IZO and the technologically relevant IGZO. This work opens a new means to fabricate amorphous semiconductors via solution processing at low temperatures, while preserving or enhancing the mobility of the pristine polycrystalline semiconductor.     

The microstructure,mechanical stress,texture, and electromigration behavior of Al-Pd alloys

As the minimum feature size of interconnect lines decreases below 0.5 urn, the need to control the line microstructure becomes increasingly important. The alloy content, deposition process, fabrication method, and thermal history all determine the microstructure of an interconnect, which, in turn, affects its performance and reliability. The motivation for this work was to characterize the microstructure of various sputtered Al-Pd alloys (Al-0.3wt.%Pd, Al-2Cu-0.3Pd, and Al-0.3Nb-0.3Pd) vs sputtered Al-Cu control samples (Al-0.5Cu and Al-2Cu) and to assess the role of grain size, mechanical stress, and crystallographic texture on the electromigration behavior of submicrometer wide lines. The grain size, mechanical stress, and texture of blanket films were measured as a function of annealing. The as-deposited film stress was tensile and followed a similar stress history on heating for all of the films; on cooling, however, significant differences were observed between the Al-Pd and Al-Cu films in the shape of their stress-temperature-curves. A strong (111) crystallographic texture was typically found for Al-Cu films deposited on SiO₂. A stronger (111) texture resulted when Al-Cu was deposited on 25 nm titanium. Al-0.3Pd films, however, exhibited either a weak (111) or (220) texture when deposited on SiO₂, which reverted to a strong (111) texture when deposited on 25 nm titanium. The electromigration lifetimes of passivated, ≈0.7 μm wide lines at 250°C and 2.5 × 10⁶ A/cm² for both single and multi-level samples (separated with W studs) are reported. The electromigration behavior of Al-0.3Pd was found to be less dependent on film microstructure than on the annealing atmosphere used, i.e. forming gas (90% N₂-10%H₂) annealed Al-0.3Pd films were superior to all of the alloys investigated, while annealing in only N₂ resulted in poor lifetimes.     

Impact of thermal cycling on the evolution of grain, precipitate and dislocation structure in Al, 0.5% Cu, 1% Si thin films

Thermal cycles have been performed both outside and inside a transmission electron microscope (TEM) in order to analyze the evolution of the microstructure of Al, 0.5% Cu, 1% Si thin films deposited onto oxidized Si substrates. It is shown that grain growth and dislocation activity start almost simultaneously and cooperate throughout the plastic regime of the stress–temperature curve to generate bamboo-type grains with low dislocation density. Si precipitates serve as anchoring points for dislocations and grain boundaries. Thermal cycling and diffusion cause the growth of these precipitates and a diminution of their number. Diffusion also proves to play an important role regarding plastic relaxation at the Al/SiO_x interface and at the grain boundaries where an intense hillock and whisker formation has been observed in scanning electron microscope (SEM). The stress–temperature evolution is discussed in light of these observations.