Low-Dielectric Loss Characteristics of Nd(Co1/2Ti1/2)O3 Ceramics at Microwave Frequencies

The microwave dielectric properties and the microstructures of Nd(Co_1/2Ti_1/2)O₃ (NCT) ceramics using starting powders of Nd₂O₃, CoO, and TiO₂ prepared by the conventional solid-state route have been researched. The dielectric constant values (ɛ_r) saturated at 24.8–27. Quality factor ( Q × f ) values of 37 900–140 000 (at 9 GHz) and the measured τ_f values ranging from −45 to −48 ppm/°C can be obtained when the sintering temperatures are in the range of 1410°–1500°C. The ɛ_r value of 27, the Q × f value of 140 000 (at 9 GHz) and the τ_f value of −46 ppm/°C were obtained for NCT ceramics sintered at 1440°C for 4 h. For applications of high selective microwave ceramic resonator, filter, and antenna, NCT is proposed as a suitable material candidate.     

Dielectric Properties of (1−x)CaTiO3–xCa(Zn1/3Nb2/3)O3 Ceramic System at Microwave Frequency

The microwave dielectric properties of the (1− x )CaTiO₃– x Ca(Zn_1/3Nb_2/3)O₃ ceramic system have been investigated. The ceramic samples sintered at 1300°–1450°C for 4 h in air exhibit orthorhombic pervoskite and form a complete solid solution for different x value. When the x value increased from 0.2 to 0.8, the permittivity ɛ_r decreased from 115 to 42, the unloaded quality factor Q × f increased from 5030 to 13 030 GHz, and the temperature coefficient τ_f decreased from 336 to −28 ppm/°C. When x =0.7, the best combination of dielectric properties, a near zero temperature coefficient of resonant frequency of τ_f∼−6 ppm/°C, Q × f ∼10 860 GHz and ɛ_r∼51 is obtained.     

Synthesis and Microwave Dielectric Properties of Re3Ga5O12 (Re: Nd, Sm, Eu, Dy, Yb, and Y) Ceramics

Re₃Ga₅O₁₂ (Re: Nd, Sm, Eu, Dy, Yb, and Y) garnet ceramics were synthesized and their microwave dielectric properties were investigated for advanced substrate materials in microwave integrated circuits. The Re₃Ga₅O₁₂ ceramics sintered at 1350°–1500°C had a high-quality factor ( Q × f ) ranging from 40 000 to 192 173 GHz and a low-dielectric constant (ɛ_r) of between 11.5 and 12.5. They also exhibited a relatively stable temperature coefficient of resonant frequency (τ_f) in the range of −33.7 to −12.4 ppm/°C. In particular, the Sm₃Ga₅O₁₂ ceramics sintered at 1450°C exhibited good microwave dielectric properties of ɛ_r=12.4, Q × f =192 173 GHz, and τ_f=−19.2 ppm/°C.     

Microwave Dielectric Properties of Low-Fired ZnNb2O6 Ceramics with BiVO4 Addition

The BiVO₄ additive was found effective for low-temperature firing of ZnNb₂O₆ polycrystalline ceramics below 950°C in air without a serious degradation in their microwave dielectric properties. Dense BiVO₄-doped ZnNb₂O₆ samples of a relative sintered density over 95% could be prepared even at 925°C. An optimally processed specimen exhibited excellent microwave dielectric properties of Q · f = 55000 GHz, ɛ_r= 26, and τ_f=−57 ppm/°C. With increasing BiVO₄ addition up to 20 mol% relative to ZnNb₂O₆, while the quality factor Q · f was gradually decreased, the relative dielectric constant, ɛ_r, was linearly increased and the temperature coefficient of resonant frequency, τ_f, was slightly increased. The variations in Q · f and ɛ_r are surely attributable to the residual BiVO₄ in the ZnNb₂O₆ matrix. An unexpected slight increase in τ_f is probably due to the formation of the Bi(V,Nb)O₄-type solid solution.     

Synthesis of BaCu(B2O5) Ceramics and their Effect on the Sintering Temperature and Microwave Dielectric Properties of Ba(Zn1/3Nb2/3)O3 Ceramics

BaCu(B₂O₅) ceramics were synthesized and their microwave dielectric properties were investigated. BaCu(B₂O₅) phase was formed at 700°C and melted above 850°C. The BaCu(B₂O₅) ceramic sintered at 810°C had a dielectric constant (ɛ_r) of 7.4, a quality factor ( Q × f ) of 50 000 GHz and a temperature coefficient of resonance frequency (τ_f) of −32 ppm/°C. As the BaCu(B₂O₅) ceramic had a low melting temperature and good microwave dielectric properties, it can be used as a low-temperature sintering aid for microwave dielectric materials for low temperature co-fired ceramic application. When BaCu(B₂O₅) was added to the Ba(Zn_1/3Nb_2/3)O₃ (BZN) ceramic, BZN ceramics were well sintered even at 850°C. BaCu(B₂O₅) existed as a liquid phase during the sintering and assisted the densification of the BZN ceramic. Good microwave dielectric properties of Q × f =16 000 GHz, ɛ_r=35, and τ_f=22.1 ppm/°C were obtained for the BZN+6.0 mol% BaCu(B₂O₅) ceramic sintered at 875°C for 2 h.     

Microwave Dielectric Properties of CaTiO3-CaAl1/2Nb1/2O3 Ceramics Doped with Li3NbO4

The microwave dielectric properties of CaTi_{1− x} (Al_1/2Nb_1/2) _x O₃ solid solutions (0.3 ≤ x ≤ 0.7) have been investigated. The sintered samples had perovskite structures similar to CaTiO₃. The substitution of Ti⁴⁺ by Al³⁺/Nb⁵⁺ improved the quality factor Q of the sintered specimens. A small addition of Li₃NbO₄ (about 1 wt%) was found to be very effective for lowering sintering temperature of ceramics from 1450–1500° to 1300°C. The composition with x = 0.5 sintered at 1300°C for 5 h revealed excellent dielectric properties, namely, a dielectric constant (ɛ_r) of 48, a Q × f value of 32 100 GHz, and a temperature coefficient of the resonant frequency (τ_f) of −2 ppm/K. Li₃NbO₄ as a sintering additive had no harmful influence on τ_f of ceramics.     

Microstructures and Microwave Dielectric Characteristics of CaRAlO4 (R = Nd, Sm, Y) Ceramics with Tetragonal K2NiF4 Structure

CaRAlO₄ (R = Nd, Sm, Y) ceramics with a K₂NiF₄ structure were prepared by a solid-state reaction approach, and their microwave dielectric characteristics were evaluated, along with their microstructures. Dense CaNdAlO₄, CaSmAlO₄, and CaYAlO₄ ceramics were obtained by sintering at 1425°–1500°C in air for 3 h, and good microwave dielectric characteristics were achieved: (1) ɛ= 18.2, Qf = 17 980 GHz, τ_f=−52 ppm/°C for CaNdAlO₄; (2) ɛ= 18.2, Qf = 51 060 GHz, τ_f=−3 ppm/°C for CaSmAlO₄; and (3) ɛ= 18.9, Qf = 39 960 GHz, τ_f= 6 ppm/°C for CaYAlO₄.     

Low-Loss Microwave Dielectrics Using Mg2(Ti1−xSnx)O4 (x=0.01–0.09) Solid Solution

Low-loss ceramics having the chemical formula Mg₂(Ti_{1− x} Sn _x )O₄ for x ranging from 0.01 to 0.09 have been prepared by the conventional mixed oxide route and their microwave dielectric properties have been investigated. X-ray powder diffraction patterns indicate the corundum-structured solid solutions for the prepared compounds. In addition, lattice parameters, which linearly increase from 8.4414 to 8.4441 Å with the rise of x from 0.01 to 0.09, also confirm the forming of solid solutions. By increasing x from 0.01 to 0.05, the Q × f of the specimen can be tremendously boosted from 173 000 GHz to a maximum 318 000 GHz. A fine combination of microwave dielectric properties (ɛ_r∼15.57, Q × f ∼318 000 GHz at 10.8 GHz, τ_f∼−45.1 ppm/°C) was achieved for Mg₂(Ti_0.95Sn_0.05)O₄ ceramics sintered at 1390°C for 4 h. Ilmenite-structured Mg(Ti_0.95Sn_0.05)O₃ (ɛ_r∼16.67, Q × f ∼275 000 GHz at 10.3 GHz, τ_f∼−53.2 ppm/°C) was detected as a second phase. The presence of the second phase, however, would cause no significant variation in the dielectric properties of the specimen, because the second phase properties are very similar to the primary phase. These unique properties, in particular, low ɛ_r and high Q × f , can be utilized as a very promising dielectric material for ultra-high-frequency applications.     

Effect of Bi2O3 Addition on the Sintering Temperature and Microwave Dielectric Properties of Zn2SiO4 Ceramics

Bi₂O₃ was added to a nominal composition of Zn_1.8SiO_3.8 (ZS) ceramics to decrease their sintering temperature. When the Bi₂O₃ content was <8.0 mol%, a porous microstructure with Bi₄(SiO₄)₃ and SiO₂ second phases was developed in the specimen sintered at 885°C. However, when the Bi₂O₃ content exceeded 8.0 mol%, a liquid phase, which formed during sintering at temperatures below 900°C, assisted the densification of the ZS ceramics. Good microwave dielectric properties of Q × f =12,600 GHz, ɛ_r=7.6, and τ_f=−22 ppm/°C were obtained from the specimen with 8.0 mol% Bi₂O₃ sintered at 885°C for 2 h.     

Microstructures and Microwave Dielectric Characteristics of Ca(Zn1/3Nb2/3)O3 Complex Perovskite Ceramics

Ca(Zn_1/3Nb_2/3)O₃ microwave dielectric ceramics were prepared using a solid-state reaction process, and their microwave dielectric properties were evaluated as functions of sintering and postdensification annealing conditions. The relationship between microwave dielectric properties and processing was interpreted through the variation of microstructures. The dielectric constant showed slight variation with sintering and annealing conditions, but the Q × f value increased at first and then decreased with increased sintering temperature, and annealing in oxygen indicated significant improvement in Q × f , especially for the specimens sintered at higher temperatures. The good microwave dielectric properties were obtained in the ceramics sintered at 1225°C in air for 3 h and annealed at 1100°C in oxygen for 8 h: ɛ= 34.1, Q × f = 15 890 GHz, τ_f=−48 ppm/°C.     

Dielectric Characteristics of Nd(Zn1/2Ti1/2)O3 Ceramics at Microwave Frequencies

The microwave dielectric properties and the microstructures of Nd(Zn_1/2Ti_1/2)O₃ (NZT) ceramics prepared by the conventional solid-state route have been studied. The prepared NZT exhibited a mixture of Zn and Ti showing 1:1 order in the B-site. The dielectric constant values (ɛ_r) saturated at 29.1–31.6. The quality factor ( Q × f ) values of 56 700–170 000 (at 8.5 GHz) can be obtained when the sintering temperatures are in the range of 1300°–1420°C. The temperature coefficient of resonant frequency τ_f was not sensitive to the sintering temperature. The ɛ _r value of 31.6, the Q × f value of 170 000 (at 8.5 GHz), and the τ_f value of −42 ppm/°C were obtained for NZT ceramics sintering at 1330°C for 4 h. For applications of high selective microwave ceramic resonators, filters, and antennas, NZT is proposed as a suitable material candidate.     

A Novel Temperature-Compensated Microwave Dielectric (1−x)(Mg0.95Ni0.05)TiO3−xCa0.6La0.8/3TiO3 Ceramics System

The microstructure and microwave dielectric properties of a (1− x )(Mg_0.95Ni_0.05)TiO₃− x Ca_0.6La_0.8/3TiO₃ ceramics system have been investigated. The system was prepared using a conventional solid-state ceramic route. In order to produce a temperature-stable material, Ca_0.6La_0.8/3TiO₃ was added for a near-zero temperature coefficient (τ_f). With partial replacement of Mg²⁺ by Ni²⁺, the dielectric properties of the (1− x )(Mg_0.95Ni_0.05)TiO₃− x Ca_0.6La_0.8/3TiO₃ ceramics can be promoted. The microwave dielectric properties are strongly correlated with the sintering temperature and the composition. An excellent Q × f value of 118,000 GHz can be obtained for the system with x =0.9 at 1325°C. For practical application, a dielectric constant (ɛ_r) of 24.61, a Q × f value of 102,000 GHz, and a temperature coefficient of resonant frequency (τ_f) of −3.6 ppm/°C for 0.85(Mg_0.95Ni_0.05)TiO₃−0.15Ca_0.6La_0.8/3TiO₃ at 1325°C are proposed. A parallel-coupled line band-pass filter is designed and simulated using the proposed dielectric to study its performance.     

Microwave Dielectric Properties of La6Mg4A2W2O24 [A=Ta and Nb] Ceramics

The microwave dielectric properties of two A-site-deficient perovskite-type ceramics in the La₆Mg₄A₂W₂O₂₄ [A=Ta and Nb] system were investigated. The compounds were synthesized by the solid-state ceramic route. The structure and microstructure were analyzed using X-ray diffraction and scanning electron microscopy techniques. The dielectric properties were measured in the microwave frequency range [4–6 GHz] by the resonance method. La₆Mg₄Ta₂W₂O₂₄ had Q _u× f =13 600 GHz, ɛ_r=25.2, and τ_f=−45 ppm/°C and La₆Mg₄Nb₂W₂O₂₄ had Q _u× f =16 400 GHz, ɛ_r=25.8, and τ_f=−56 ppm/°C.     

A/B Site Modified CaTiO3 Dielectric Ceramics for Microwave Application

(Li_1/2Nd_1/2)²⁺ substitution into the A site and (Mg_1/3Ta_2/3)⁴⁺ substitution into the B site of CaTiO₃ ceramic were investigated, respectively. The modified CaTiO₃ dielectric ceramics prepared by conventional solid-state method exhibit single perovskite structure and improved dielectric properties. Optimal microwave dielectric properties of ɛ_r=112.6, Q × f =4480 GHz, τ_f=8.2 ppm/°C in [Ca_0.4(Li_1/2Nd_1/2)_0.6] TiO₃ and ɛ_r=60.2, Q × f =36900 GHz, τ_f=−10.1 ppm/°C in Ca[Ti_0.4(Mg_1/3Ta_2/3)_0.6] O₃ are obtained, which indicates their potential for microwave application. The effects of change of crystal structure on dielectric properties are also discussed.     

Sintering Behavior and Dielectric Properties of Bi3NbO7 Ceramics Prepared by Mixed Oxides and High-Energy Ball-Milling Methods

The sintering behavior and dielectric properties of Bi₃NbO₇ ceramics prepared by the high-energy ball milling (HEM) method and conventional mixed oxides method with V₂O₅ addition were investigated. All the samples were sintered between 840° and 960°C. For the ceramics prepared by the mixed oxides method, the pure tetragonal Bi₃NbO₇ phase formed without any cubic phase. With changing sintering temperature, the dielectric constant ɛ_r lies between 79 and 92, while the Q × f values are between 300 and 640 GHz. The samples sintered at 870°C have the best microwave dielectric properties with ɛ_r=79, Q × f =640 GHz, and the temperature coefficients of resonant frequency τ_f between 0 and −20 ppm/°C. For the ceramics prepared by the HEM, a pure cubic phase was obtained. The ɛ_r changes between 78 and 80 and Q × f were between 200 and 290 GHz.     

Effect of Zn/Si Ratio on the Microstructural and Microwave Dielectric Properties of Zn2SiO4 Ceramics

Zn₂SiO₄ ceramics synthesized by the conventional solid-state method exhibited a low Q × f value, possibly due to the formation of a ZnO second phase. However, with a small ZnO reduction from the Zn₂SiO₄ ceramics, the ZnO second phase disappeared and grain growth occurred due to the formation of a Si-rich liquid phase. Specimens with a large grain size exhibited an improved Q × f value. In particular, the ceramics with nominal composition Zn_1.8SiO_3.8 sintered at 1300°C exhibited improved microwave dielectric properties of ɛ_r=6.6, Q × f =147 000 GHz, and τ_f=−22 ppm/°C.     

Formation and Microwave Dielectric Properties of the Mg2V2O7 Ceramics

The formation process and microwave dielectric properties of the Mg₂V₂O₇ ceramics were investigated. The MgV₂O₆ phase that was formed at around 450°C interacted with remnant MgO above 590°C to form a homogeneous monoclinic Mg₂V₂O₇ phase. Finally, this monoclinic Mg₂V₂O₇ phase was changed to a triclinic Mg₂V₂O₇ phase for the specimen fired at 800°C. Sintering at 950°C for more than 5 h produced high-density triclinic Mg₂V₂O₇ ceramics. In particular, the Mg₂V₂O₇ ceramics sintered at 950°C for 10 h exhibited the good microwave dielectric properties of ɛ_r=10.5, Q × f =58 275 GHz, and τ_f=−26.9 ppm/°C.     

High Q Microwave Dielectric Ceramics in (Ni1−x Znx)Nb2O6 System

(Ni_{1− x} Zn _x )Nb₂O₆, 0≤ x ≤1.0, ceramics with >97% density were prepared by a conventional solid-state reaction, followed by sintering at 1200°–1300°C (depending on the value of x ). The XRD patterns of the sintered samples (0≤ x ≤1.0) revealed single-phase formation with a columbite ( Pbcn ) structure. The unit cell volume slightly increased with increasing Zn content ( x ). All the compositions showed high electrical resistivity (ρ_dc=1.6±0.3 × 10¹¹Ω·cm). The microwave (4–5 GHz) dielectric properties of (Ni_{1− x} Zn _x )Nb₂O₆ ceramics exhibited a significant dependence on the Zn content and to some extent on the morphology of the grains. As x was increased from 0 to 1, the average grain size monotonically increased from 7.6 to 21.2 μm and the microwave dielectric constant (ɛ'_r) increased from 23.6 to 26.1, while the quality factors ( Q _u× f ) increased from 18 900 to 103 730 GHz and the temperature coefficient of resonant frequency (τ_f) increased from −62 to −73 ppm/°C. In the present work, we report the highest observed values of Q _u× f =103 730 GHz, and ɛ'_r=26.1 for the ZnNb₂O₆-sintered ceramics.     

Structure and Microwave Dielectric Characteristics of Ca1+xNd1−xAl1−xTixO4 Ceramics

CaNdAlO₄ microwave dielectric ceramics were modified by Ca/Ti co-substitution, and their dielectric characteristics were evaluated along with their structure and microstructures. Ca_{1+ x} Nd_{1− x} Al_{1− x} Ti _x O₄ ( x =0, 0.025, 0.05, 0.10, 0.15, 0.20) ceramics with the relative density of over 95% theoretical density were obtained by sintering at 1400°–1450°C in air for 3 h, where the K₂NiF₄-type solid solution single phase was determined from the compositions of x <0.20, while a small amount of CaTiO₃ secondary phase was detected for x =0.20. With Ca/Ti co-substitution in CaNdAlO₄ ceramics, the dielectric constant (ɛ_r) increased with increasing x , and the temperature coefficient of resonant frequency (τ_f) was adjusted from negative to positive, while the Q × f ₀ value increased significantly at first and reached an extreme value at x =0.025 and the maximum at x =0.15. The best combination of microwave dielectric characteristics were achieved at x =0.15 (ɛ_r=19.5, Q × f ₀=93 400 GHz, τ_f=−2 ppm/°C). The improvement of the Q × f ₀ value primarily originated from the reduced interlayer polarization with Ca/Ti co-substitution, while the decreased tolerance factor, the subsequent increased interlayer stress, and the appearance of CaTiO₃ secondary phase brought negative effects upon the Q × f ₀ value.     

Effect of Li2CO3 Addition on the Sintering Temperature and Microwave Dielectric Properties of Mg2V2O7 Ceramics

Li₂CO₃ was added to Mg₂V₂O₇ ceramics in order to reduce the sintering temperature to below 900°C. At temperatures below 900°C, a liquid phase was formed during sintering, which assisted the densification of the specimens. The addition of Li₂CO₃ changed the crystal structure of Mg₂V₂O₇ ceramics from triclinic to monoclinic. The 6.0 mol% Li₂CO₃-added Mg₂V₂O₇ ceramic was well sintered at 800°C with a high density and good microwave dielectric properties of ɛ _r=8.2, Q × f =70 621 GHz, and τ_f=−35.2 ppm/°C. Silver did not react with the 6.0 mol% Li₂CO₃-added Mg₂V₂O₇ ceramic at 800°C. Therefore, this ceramic is a good candidate material in low-temperature co-fired ceramic multilayer devices.