Sb3+掺杂Li0.02(Na0.53K0.48)0.98Nb0.8Ta0.2O3无铅压电陶瓷的电学性能

用传统的固相反应烧结法制备了Li0.02(Na0.53K0.48)0.98 Nb0.8Ta0.2O3-xSb2O3(LNKNT-xSb2O3)无铅压电陶瓷,研究了Sb3+掺杂对陶瓷晶体结构、显微结构及压电性能的影响.研究结果表明,Sb3+掺杂LNKNT陶瓷属于明显的“软性”掺杂,少量掺杂Sb3+能显著提高陶瓷的烧结及压电性能.当烧结温度为1100℃,掺杂量为2wt％时,LNKNT-0.02Sb陶瓷达到最好的压电性能:d33=193 pC/N,KP=49.5％,εr=779,Pr=16μC/cm2,应变达到2.3％,但机械品质因数QM从110.97降低到了85,介电损耗tanδ从1.66％增加到了2.01％.     

Na0.5K0.44Li0.06Nb0.94Sb0.06O3无铅压电陶瓷的制备与性能研究

采用传统固相烧结法制备Na0.5 K0.44 Li0.06 Nb0.94 Sb0.06 O3无铅压电陶瓷,研究了烧结温度对陶瓷样品微观结构及电学性能的影响.研究结果表明:烧结温度在1020～1100℃范围内,样品均形成了单一的正交相钙钛矿结构,烧结温度对微观形貌和电学性能有较大影响;与纯KNN陶瓷相比,陶瓷的To-t和Tc均向低温方向移动;当烧结温度为1080℃时晶粒发育比较完全,To-t和Tc分别为45℃和345℃,同时表现出优异的电学性能:d33=200 pC/N,kp=0.365,tanδ=4.67％.     

(K0.52Na0.44Li0.04)(Nb0.86Ta0.10Sb0.04)O3-BiFeO3无铅压电陶瓷的电性能

采用固相法制备(1-x)(K0.52Na0.44Li0.04)(Nb0.86Ta0.10Sb0.04)O3-xBiFeO3[(1-x)LF4-xBF]无铅压电陶瓷,研究BF含量(0≤x≤0.010 00)对LF4陶瓷微观结构和电性能的影响.结果表明:所有样品均具有纯的四方钙钛矿结构,引入BF能明显改善LF4陶瓷的致密性...     

微波水热法制备(1-x) K0.55Na0.45NbO3-xLiSbO3系无铅压电陶瓷

以分析纯NaOH,KOH,Li2CO3,Nb2O5,Sb2O3等为原料,采用微波水热法合成(1-x)K0.55Na0.45NbO3-xLiSbO3(KNNLS,x =0.03～0.07mol)粉体,分析了粉体的晶体结构与形貌.以该粉体制备压电陶瓷,系统研究了LiSbO3含量对压电陶瓷结构与性能的影响.研究结果表明:微波水热法在220℃下保温30min可以合成具有纯正交钙钛矿结构的KNNLS(x=0.03～0.07)粉体,粉体呈立方状,尺寸约0.5～1μm.利用该粉体制备的压电陶瓷结构致密,晶粒大小分布均匀.当x=0.05时,该组成陶瓷具有最佳的综合压电性能:压电常数d33=110 pC/N,平面机电耦合系数kp=0.29,介电常数εT33/ε0=466,介质损耗tanδ =1.4％以及机械品质因素Qm=107.     

Ag2O掺杂对Li0.02(Na0.52K0.48)0.98Nb0.8Ta0.2O3无铅压电陶瓷电性能影响的研究

用传统的固相无压烧结法制备了Li0.02(Na0.52K0.48)0.98Nb0.8T0.2O3-xAg2O(0≤x≤0.1)无铅压电陶瓷,研究了Ag2O掺杂对陶瓷电性能的影响.研究发现,适当掺杂Ag2O能显著提高陶瓷的电性能,在1090℃的烧结温度下,当掺杂量为0.06时,陶瓷的压电性能最佳,d33、Kp、εr、Pr均达到最大(d33=229 pC/N,Kp=55.2％,εr=802,Pr=23 μC/cm2),矫顽场降到最低(Ec=12 kV/cm),应变达到2.0％.但Ag2O的添加使陶瓷的机械品质因数Qm由139.7降到了58.8,使介电损耗tanδ由1.38％增加到了2.7％.     

制备工艺对0.95(K_(0.5)Na_(0.5))NbO_3-0.05CaZrO_3基无铅陶瓷压电性能的影响

采用传统陶瓷工艺制备了0.95(K0.5Na0.5)NbO3-0.05CaZrO3无铅压电陶瓷。研究了烧结温度和极化工艺对陶瓷压电性能的影响。结果表明:随着烧结温度的提高,0.95(K0.5Na0.5)NbO3-0.05CaZrO3陶瓷的体积密度增大,在1170℃时达到最大值,同时d33和kp,在此温度也分别达到他们的最大值210pC/N和0.40。极化工艺对0.95(K0.5Na0.5)NbO3-0.05CaZrO3陶瓷的压电性能有明显的影响,0.95(K0.5Na0.5)NbO3-0.05CaZrO3陶瓷的最佳极化温度是70℃,最佳极化电场是4kV/mm。     

K0.5Na0.5NbO3-BaCu0.5W0.5O3无铅压电陶瓷的结构与性能

以传统固相法工艺制备(1-x)K0.5Na0.5NbO3-xBaCu0.5W0.5O3[(1-x)KNN-xBCW]无铅压电陶瓷,研究不同BCW掺量(x=0％,0.1％,0.25％,0.5％,1.0％,摩尔分数,下同)对KNN陶瓷的晶体结构和电性能的影响,结果表明:x＜0.5％时,KNN陶瓷的相结构没有改变,仍为正交相...     

K0.5Na0.5NbO3-LiSbO3-BiFeO3无铅压电陶瓷的烧结特性

采用传统无压固相烧结法制备0.996(0.95K0.5NbO3-0.05LiSbO3)-0.004BiFeO3[0.996(0.95KNN-0.05LS)-0.004BF]无铅压电陶瓷,着重研究烧结保温时间对陶瓷结构、压电性能与介电性能和Curie温度Tc的影响.结果表明:随着烧结保温时间的延长,陶瓷趋于形成更稳定的四...     

(1-x)K0.49Na0.51NbO3-xLiNbO3无铅压电陶瓷的性能

用传统固相烧结法制备(1-x)K0.49Na0.51NbO3-xNbO3(KNNLN,x=0.00～0.08,摩尔分数)体系无铅压电陶瓷.用x射线衍射仪及精密阻抗分析仪等研究不同掺量LiNbO3掺杂后对KNNLN体系陶瓷的晶体结构和电性能的影响.结果表明:在研究组成范围内,LiNbO3加入后能够形成单一钙钛矿结构的固溶...     

(K_(0.5)Na_(0.5))NbO_3-CaZrO_3基无铅压电陶瓷的相结构和压电性能研究

采用传统陶瓷工艺制备了(1-x)(K0.5Na0.5)NbO3-xCaZrO3(简称KNN-CZ)无铅压电陶瓷。分析了陶瓷样品的相结构组成。测试结果表明:所有陶瓷样品均为钙钛矿相,未发现其它晶相。随着CaZrO3含量的增加,(1-x)KNNxCZ陶瓷的相结构由正交相转变为四方相,最后变为立方相。研究了不同CaZrO3含量对压电性能的影响,实验表明:当CaZrO3含量为0.05mol时,压电常数d33和径向机电耦合系数kp分别达到了最大值196pC/N和0.35。(1-x)KNNxCZ(x=0.05)陶瓷的压电性能展现了良好的温度稳定性和经时稳定性,这些结果表明(1-x)KNN-xCZ(x=0.05)陶瓷是一种优良的无铅压电备选材料。     

High piezoelectric performance and domain configurations of (K0.45Na0.55)0.98Li0.02Nb0.76Ta0.18Sb0.06O3 lead-free ceramics prepared by two-step sintering

Research for high-performance lead-free piezoelectric materials has become an urgent issue from the environmental concern. Very limited attempts on two-step sintering had been made so far. In this study, (K_0.45Na_0.55)_0.98Li_0.02Nb_0.76Ta_0.18Sb_0.06O₃ ceramics were prepared by both conventional sintering and two-step sintering. Piezoelectric properties, microstructure and domain structure were found to change significantly with sintering methods and sintering conditions. Two-step sintering was performed in the way that temperature is first quickly raised to 1180 °C, kept for 1 min, then immediately cooled down to 1120 °C and maintained for a desired time length. The effects of dwelling time on piezoelectric performance and microstructure as well as domain structure were investigated. High piezoelectric properties of d₃₃ = 455 pC/N, k_p = 0.54 and k₃₃ = 0.67 were obtained in a ceramic prepared under the dwelling time of 20 h. This ceramic also possesses a very good piezoelectric thermal-ageing stability over −50 °C–150 °C. Further investigation reveals that this ceramic has a quite uniform grain-size distribution with the average grain size of about 12 μm in microstructure and shows domain patterns of simple parallel stripes with a hierarchical nanodomain structure appearing inside some of broad stripes. The observed excellent piezoelectric performance is considered to associate closely with the unique domain structure.     

Sb掺杂对(K0.49Na0.51)0.94Li0.06(Nb0.94Ta0.06)O3无铅压电陶瓷结构与性能的影响

采用固相反应法制备(K0.49Na0.51)0.94Li0.06Nb0.94SbxTa0.06-xO3(KNNLSxT0.06-x,x=0.00～0.06)无铅压电陶瓷,研究了Sb的掺杂量对陶瓷晶体结构与压电性能的影响。X射线衍射结果表明:随着Sb掺杂量x的增加,陶瓷的晶体结构由正交相向四方相转变,并在x=0.04～0.05时出现正交相逐渐转变为四方相的多型相转变(PPT),在x=0.04时具有较佳的性能:压电常数d33=258 pC/N,平面机电耦合系数kp=54%,机械品质因素Qm=61以及较高的居里温度Tc=405℃。     

Li2O excess (Na0.51K0.47Li0.02)(Nb0.8Ta0.2)O3 lead free piezoelectric ceramics

1 mol% Li₂O excess (Na_0.51K_0.47Li_0.02)(Nb_0.8Ta_0.2)O₃ ceramics were prepared by the conventional mixed oxide method and sintered from 950 to 1200 °C. Also, Li₂O was employed as a sintering aid for high densification and low temperature sintering process. X-ray diffraction results of 1 mol% Li₂O excess (Na_0.51K_0.47Li_0.02)(Nb_0.8Ta_0.2)O₃ lead free piezoelectric ceramics indicated that the specimens were well crystallized and have tetragonal structure. The specimens which sintered at 1050 °C showed the highest piezoelectric properties compared with others. The measured piezoelectric constant and electromechanical coupling coefficient were 231 pC/N and 38.9%, respectively. Curie temperature of (Na_0.51K_0.47Li_0.02)(Nb_0.8Ta_0.2)O₃ ceramics was 344.32, 344.4 and 344.5 °C at 1, 10 and 100 kHz, respectively.     

Effects of the Domain Size on Local d33 in Tetragonal (Na0.53 K0.45Li0.02)(Nb0.8Ta0.2)O3 Ceramics

Lead‐free (Na_0.53K_0.45Li_0.02)(Nb_0.8Ta_0.2)O₃ (NKLNT) was prepared using a conventional cold‐pressing method. A commercial piezoresponse force microscope (PFM) was applied to observe the domain structures of NKLNT ceramics. The typical configuration of the ferroelectric domain was analyzed in abnormal grains with grain sizes that exceeded 40 μm, where tetragonal 90° domains are predominant. The local piezoresponse hysteresis loops were characterized and studied as a function of the domain width (dw) in the range 300–1000 nm. It was found that the amplitude signals increased and the coercive field reduced significantly with a decrease in the domain size. Finally, the local longitudinal piezoelectric coefficient (d₃₃) increased as the domain size decreased.     

(K,Na) (Nb,Ta,Sb)O3粉体制备及陶瓷介电性能研究

Ta/Sb掺杂的K0.5Na0.5Nb0.7TaxSb0.3-xO3(KNNSTx,x＝0.06,0.09,0.12,0.15,0.18,0.21, 0.24)粉体经水热合成,Ta、Sb对粉体物相、微观结构的影响被系统研究,烧结后陶瓷的微观结构、介电性能表明:陶瓷物相均具有纯钙钛矿结构;随着Ta含量的增加陶瓷晶粒尺寸逐渐增大,x＝0.09、0.12时较小粒径颗粒均匀分布在大颗粒的空隙之间,陶瓷密度增加;样品的介电常数随着Ta含量的增加x＝0.06～0.12逐渐降低,x＝0.15～0.24逐渐增加,居里温度均在350 ℃左右,且x＝0.09、0.12时陶瓷介电损耗较小.     

High‐Energy Storage Performance in (Pb0.98La0.02)(Zr0.45Sn0.55)0.995O3 AFE Thick Films Fabricated via a Rolling Process

(Pb_0.98La_0.02)(Zr_0.45Sn_0.55)_0.995O₃ antiferroelectric (AFE) thick films with a thickness of about 85 μm were successfully fabricated via a rolling process using an improved sintering method, and all specimens showed high‐energy‐storage performance. The X‐ray diffraction, SEM pictures, and hysteresis loops confirmed that the sintering temperature had an important influence on the microstructures, dielectric properties and energy storage performance of AFE thick films. The grain size and the storage efficiency increased with the increasing sintering temperature, the energy storage performance was enlarged by the rolling process. As a result, a maximum recoverable energy density of 7.09 J/cm³ with an efficiency of 88% was achieved at room temperature, together with stable energy‐storage behavior, which was almost three times higher than that (2.43 J/cm³) of the bulk ceramics counterparts. The results demonstrated that the improved method was an effective way to improve the breakdown strength and energy storage performance of AFE thick films, and (Pb_0.98La_0.02)(Zr_0.45Sn_0.55)_0.995O₃ AFE thick films were a promising material for high‐power energy storage.