共查询到18条相似文献,搜索用时 140 毫秒
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本刊讯中国计量科学研究院研制的“10伏约瑟夫森结阵电压基准”装置,荣获2003年度国家科技进步奖二等奖。10伏约瑟夫森结阵电压基准是量子基准,该基准利用低温超导结电子跃迁效应复现电压量值,可在很宽范围内复现高精度的电压量值。该装置的创新在于,硬件方面较好地解决了微波源,同时满足了结阵特性、输出功率、锁相环路三方面对微波频率的要求,在软件方面采用了数据处理技术,消除了10伏结阵电压阶数不稳定而对测量数据造成的影响,对提高测量效率及改善不确定度有着重要意义。计量院建立的10伏约瑟夫森电压基准,按照国际计量委员会的推荐用… 相似文献
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1995年11月3-10日,中国计量科学研究院的1V约瑟夫森结阵电压基准与国际计量局的1V约瑟夫森结阵电压基准之间进行了直接比对,比对在中国计量科学院研究进行,比对结果的综合不确定度为:实际测量标准电池的比对结果。 相似文献
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通过溅射Nb膜张力与氩(Ar)压强的关系,超导转变温度Tc,室温阻扰与液氮温度阻抗比RRT/RLN2,沉积中Ar浓度CAr与负偏压关系的测量和扫描电子显微镜的观察分析,对约瑟夫森结Nb电极作了研究。发现Ar压强在1.1Pa时,Nb膜呈现无应力状态;低负偏压下沉积的Nb膜晶粒结构是由致密膜到圆柱状。在偏压Ub=-50V时,获得表面致密均匀、晶粒结构合适的Nb膜。对Nb膜用阳极氧化电压谱图(AVS)分析,证实沉积的Nb膜内不存在氧化物、寄生结和分层界面。 相似文献
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为建立国家法定电压基准,中国计量科学研究院(NIM)对1-V和10-V约瑟夫森串联结阵电压标准进行了研究。其中结阵分别是由德国的PTB,日本的ETL,美国的NIST和韩国的KRISS提供的。采用的微波源是一个锁定到10MH_z频率标准上的高稳定高功率的85GH_z的G_aA_s耿氏管振荡器。所获得的1_v和10-V电压的总不确定度分别是9E-9和6E-9。 相似文献
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Yoshida H. Murayama Y. Endo T. 《IEEE transactions on instrumentation and measurement》1997,46(1):72-78
A novel approach is described for the design of improved coupling of millimeter-waves in a 10-V array of Josephson junctions. In this approach, microwave structures were fabricated and tested in the range 2.8 GHz to 3.6 GHz, and a scaling calculation was then used to transform them to 94 GHz. By optimizing the trade-off between antenna size and efficiency, it was possible to make more space available on the device chip to increase the number of Josephson junctions. Simulation results showed that the optimal antenna is a short double-fin-line type. This antenna type allowed us to fabricate a Josephson junction array that had 25944 Nb/Al-AlOx/Nb junctions. For this new array, zero-crossing steps were observed up to 18.5 V. The new array was then successfully used to calibrate a Zener voltage standard that had a 10-V output 相似文献
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The authors fabricated Y-Ba-Cu-O/Au/AlOx/Nb and Y-Ba-Cu-O/AlOx/Nb Josephson tunnel junctions using electron-beam evaporation of Al and Nb films and natural oxidation. Sintered Y-Ba-Cu-O was used as the base electrode. Superconducting Josephson current and hysteresis of the current-voltage characteristics, which are typical features of Josephson tunnel junctions, have been observed at 4.2 K. RF-induced voltage steps at a voltage greater than 0.4 mV have been clearly observed, and RF-induced subharmonic steps have also appeared. The superconducting Josephson current was modulated by the magnetic field 相似文献
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Popel R. Niemeyer J. Grimm L. Dunschede F. Meier W. 《IEEE transactions on instrumentation and measurement》1991,40(5):805-810
Two Josephson voltage standards have been compared using a room-temperature electronic nanovoltmeter with a peak-to-peak noise of about 2 nV at the 1-V level corresponding to a RMS uncertainty of 4×10-10. The excellent stability in maintaining the desired voltage steps makes it possible to obtain recorder traces comparing Nb/Al2O3/Nb Josephson standards with Weston cells and Zener reference standards at 1 V and 10 V. At 10 V the best result shows a peak-to-peak noise of 250 nV corresponding to a RMS uncertainty of 5×10-9 for a Zener reference and 50 nV corresponding to 1×10-9 for a series connection of nine Weston cells. As an example for the application of the Josephson standard as a potentiometer the deviation in the linearity of a digital voltmeter is confirmed to be on the order of 0.1 p.p.m. in the range from -10 V to +10 V 相似文献
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Kohlmann J. Gutmann P. Niemeyer J. 《IEEE transactions on instrumentation and measurement》1992,41(4):548-551
A ratio standard for DC resistance measurements in the range above about 10 kΩ using a three-terminal Josephson junction series array is described. Resistance ratios of two-terminal resistors from 1:1 to at least 1:10 are examined with a single device utilizing the voltage steps of the Josephson array as voltage sources of a potentiometer bridge configuration. Some features of the circuit are discussed. The system promises systematic ratio errors below 10-8 and uncertainties which depend only on the quality of the resistors. Preliminary measurements with a prototype instrument show a relative reproducibility of 1×10-7, limited by the noise of a commercial digital multimeter used as a detector 相似文献
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We studied the escape rate of Nb/AlOx/Nb Josephson junctions in zero and finite magnetic fields. The escape rate was determined from the distribution of the critical currents and the experimental data were fit to the theoretical model to determine effective temperatures, which govern the thermal activation over the energy barrier. The effective temperatures were found to depend strongly on the magnetic-field modulated critical current. We discuss a possible cause for the magnetic field dependence of the escape rate in terms of non-uniform current distribution in the junctions. 相似文献
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《IEEE transactions on instrumentation and measurement》2009,58(4):816-820
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Christian L.A. Millar K.J.H. 《IEEE transactions on instrumentation and measurement》1998,47(2):469-475
This paper proposes a new method for using a Josephson array to create a voltage waveform with a root-mean-square value calculable to better than 2 in 106 at frequencies below 50 Hz. A novel method of reliably switching the dc voltage from one known voltage step to another at precisely defined time intervals is investigated. In this method, transients in the microwave voltage driving the array are used to induce switching between steps. We consider two possible implementations of this concept. The first is for an array similar to that used in conventional dc voltage standards. The second uses the binary sequence of individually biased arrays introduced by Hamilton et al [1995]. Computer simulation and theoretical analysis are used to demonstrate that the uncertainties in switching times are potentially limited only by the speed of the available microwave attenuators, which is currently of the order of a nanosecond 相似文献
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This paper describes an output interface circuit which allows Josephson circuits to communicate with semiconductor circuits. The circuit combines Josephson and GaAs drivers to drive a 50 μ load at a signal level of semiconductor circuits. The output voltage of 2.8 mV (usual for Josephson gates using Nb/AlOx/Nb junctions) was increased to 1.7 V. The interface circuit has been operated up to 800 MHz. 相似文献