典型Sn基焊料凸点互连结构电迁移异同性

研究了Sn37Pb,Sn3.0Ag0.5Cu和Sn0.7Cu三种焊料BGA焊点在电迁移作用下界面的微观组织结构.在60℃,1×103 A/cm2电流密度条件下通电187h后,Sn37 Pb焊点阴极界面已经出现了空洞,同时在阳极有Pb的富集带;Sn3.0Ag0.5Cu焊点的阴极界面Cu基体大量溶解,阳极金属间化合物层明显比阴极厚;对于Sn0.7Cu焊料,仅发现阳极金属间化合物层厚度比阴极厚,阴极Cu基体的溶解不如SnAgCu明显,电迁移破坏明显滞后.     

典型Sn基焊料凸点互连结构电迁移异同性

研究了Sn37Pb,Sn3.0Ag0.5Cu和Sn0.7Cu三种焊料BGA焊点在电迁移作用下界面的微观组织结构.在60℃,1×103 A/cm2电流密度条件下通电187h后,Sn37 Pb焊点阴极界面已经出现了空洞,同时在阳极有Pb的富集带;Sn3.0Ag0.5Cu焊点的阴极界面Cu基体大量溶解,阳极金属间化合物层明显比阴极厚;对于Sn0.7Cu焊料,仅发现阳极金属间化合物层厚度比阴极厚,阴极Cu基体的溶解不如SnAgCu明显,电迁移破坏明显滞后.     

Sb掺杂对SnAgCu无铅焊点电迁移可靠性的影响

向Sn3.8Ag0.7Cu无铅焊膏中添加质量分数为1%的Sb金属粉末,研究了其焊点在电流密度为0.34×104A/cm2、环境温度150℃下的电迁移行为。通电245h后,阴极处钎料基体与Cu6Sn5IMC之间出现一条平均宽度为16.9μm的裂纹,阳极界面出现凸起带,钎料基体内部也产生了裂纹。结果表明:1%Sb的添加使焊点形成了SnSb脆性相,在高电流密度和高温环境下产生裂纹,缩短了焊点寿命,降低了电迁移可靠性。     

无铅焊点在热疲劳和电迁移作用下的组织演变

研究了Cu/Sn-58Bi/Cu焊点接头在室温和55℃下通电过程中阴极和阳极界面处微观组织的演变,电流密度均采用104A/cm2。结果表明,室温条件下通电达到25 d,Bi原子由阴极向阳极发生了扩散迁移,在阳极界面处形成了厚度约22.4μm的均匀Bi层,而阴极出现了Sn的聚集。加载55℃通电2 d后,焊点发生了熔融,阴极界面处形成了厚度为34.3μm的扇贝状IMC,而阳极界面IMC的厚度仅为9.7μm。在IMC层和钎料基体之间形成了厚度约7.5μm的Bi层,它的形成阻碍了Sn原子向阳极界面的扩散迁移,进而阻碍了阳极界面IMC的生长,导致了异常极化效应的出现。     

SnAgCu焊点电迁移诱发IMC阴极异常堆积

为了研究电迁移过程中焊点与焊盘界面金属问化合物(IMC)的变化,在28℃下,对无铅Sn3.0Ag0.5Cu焊点进行了6.5A直流电下的电迁移实验.结果发现,通电144h后,阳极侧IMC层变厚,平均达到10.12 μm;阴极侧IMC层大部分区域变薄至0.86μm,局部出现Cu焊盘的溶解消失,但在界面边缘处出现Cu3Sn5...     

Sn3.8Ag0.7Cu和Sn37Pb焊点界面显微结构研究

利用扫描电子显微镜（SEM）和透射电子显微镜（TEM）研究了Sn3.8Ag0.7Cu（Sn37Pb）/Cu焊点在时效过程中的界面金属间化合物（IMC）形貌和成份。结果表明：150℃高温时效50、100、200、500h后,Sn3.8Ag0.7Cu（Sn37Pb）/Cu焊点界面IMC尺寸和厚度增加明显,IMC颗粒间的沟槽越来越小。50h时效后界面出现双层IMC结构,靠近焊料的上层为Cu6Sn5,邻近基板的下层为Cu3Sn。之后利用透射电镜观察了Sn37Pb/Ni和Sn3.8Ag0.7Cu/Ni样品焊点界面,结果显示,焊点界面清晰,IMC晶粒明显。     

SnAgCu无铅焊点原位电迁移IMC演变

在28℃.3.25A直流电下,对Cu/Sn3.0Ag0.5Cu/Cu对接无铅焊点进行原位电迁移实验,观察了通电120,168,384和504 h后焊点横截面的微观组织形貌.结果表明,电迁移初期,Cu<,6>Sn<,5>化合物遍布整个焊点截面,随时间延长,不断从阴极向阳极迁移聚集;当通电504 h后,焊点内已看不到金属间...     

电流密度对电-热耦合下微焊点界面形貌的影响北大核心CSCD

针对电子封装器件中Cu/焊料/Ni焊点结构的电-热耦合效应问题,通过回流焊工艺制备Cu/Sn3.0Ag0.5Cu-0.01BP/Ni微焊点,在焊点电-热耦合实验平台上进行了四种电流密度下的热电应力实验。采用SEM和EDS研究了电流密度对电-热耦合下微焊点界面形貌的影响,探讨了阴极和阳极两侧电迁移行为以及IMC层生长机制。结果表明,当电子从阴极Cu端流向阳极Ni端时,在电子流的作用下Cu原子的移动速度加快,并阻碍阳极界面Ni原子流向Cu端。单纯热时效状态下,阳极和阴极界面厚度增长缓慢,而高电流密度下则快速增厚。无电流时,阳极端生成(Cu_(x),Ni_(y))_(6)Sn_(5)的驱动力来源于Cu、Ni两端之间的温度梯度和浓度梯度;当电-热耦合产生效应时,相对于温度梯度和浓度梯度,电流应力逐步起主导作用,改变了阴极和阳极界面IMC层的主生长机制。     

热循环条件下Sn基钎料接头电迁移行为研究

通过电迁移和热疲劳循环实验,研究了热循环和高电流密度耦合作用下Sn58Bi和Sn3.0Ag0.5Cu钎料焊接接头的失效形式。实验结果表明,在通电和高低温冲击的耦合作用下,两种钎料接头的失效都发生在升温阶段。热循环导致接头内部裂纹的萌生和扩展,导致局部电流密度持续增大,加速了电迁移的发生,最终导致焊点失效。在热电耦合作用下,Sn58Bi钎料接头的使用寿命要长于Sn3.0Ag0.5Cu钎料接头的使用寿命。     

电迁移对Sn3.0Ag0.5Cu无铅焊点剪切强度的影响

通过热风回流焊制备了Cu/Sn3.0Ag0.5Cu/Cu对接互连焊点,测试了未通电及6.5 A直流电下通电36 h和48 h后焊点的剪切强度.结果表明,电迁移显著地降低了焊点的剪切强度,电迁移36 h使剪切抗力降低约30%,电迁移48 h降低约50%.SEM观察断口和界面形貌表明,界面金属间化合物增厚使断裂由韧性向脆性...     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks