CVD金刚石技术和应用

通过大量文献资料和有关网页,叙述了近年来国内外化学气相沉积金刚石的制备、加工和应用技术研究的进展、商业化现状等.文章列举了大量图片和数据,试图展示近几年CVD金刚石有关方面的信息.文章显示,CVD金刚石技术研究和商业开发虽然都取得了长足的进步,但仍然有巨大的发展空间,特别是在传统的金刚石无法涉足的一些高技术应用领域.     

CVD金刚石应用前景探讨

阐述CVD金刚石发展及其在工业金刚石中的重要地位.聚晶质和单晶质CVD金刚石在切削工具、散热元件、耐磨零件、高强度复合线材以及检测器等方面已取得成功的应用,但有些问题仍待解决.对单晶质CVD金刚石的突出性能及其在高科技应用的可能性与发展远景作了评述.     

论CVD金刚石合成技术及其发展趋势

阐述HPHT金刚石发展的局限性与CVD金刚石的进展历程。论述以CVD技术合成金刚石的方法及其发展趋势,包括提高CVD速度和改进CVD金刚石性质。     

高速生长CVD金刚石单晶及应用

文章简要地介绍了近年来国内外CVD金刚石单晶的高速生长和应用进展.实验中采用微波等离子体化学气相沉积(CVD)方法,同质外延高速生长金刚石单晶,通过改变反应腔压强、反应气氛(在CH4／H2中引入氮气N2、二氧化碳CO2、氧气O2、)等,调制单晶生长速率、质量、颜色、表面粗糙度、光谱等特性.利用高温氢等离子体进行退火,可使金刚石单晶的颜色有很大的改善.研制了CVD金刚石单晶刀具,用于金属材料的曲面镜面加工.     

CVD金刚石技术和应用(下)

通过大量文献资料和有关网页,叙述了近年来国内外化学气相沉积金刚石的制备、加工和应用技术研究的进展、商业化现状等.文章列举了大量图片和数据,试图展示近几年CVD金刚石有关方面的信息.文章显示,CVD金刚石技术研究和商业开发虽然都取得了长足的进步,但仍然有巨大的发展空间,特别是在传统的金刚石无法涉足的一些高技术应用领域.     

CVD金刚石薄膜的制备方法及应用

对现在的化学气相沉积金刚石薄膜的方法和金刚石薄膜在器件中的应用进行介绍和评论。     

CVD金刚石切削工具

阐述金刚石切削工具在机加工中的重要作用和CVD金刚石的优异性能以及CVD金刚石切削工具的形式.对CVD金刚石薄膜切削工具和CVD金刚石厚膜切削工具的特点和应用范围进行了分析对比,并指出存在问题和发展前景.     

提高CVD金刚石涂层刀具附着力的应用研究

文章介绍了影响CVD金刚石涂层刀具附着力的因素，并重点对提高其附着力的工艺措施进行了较深入的研究，对解决刀具基体与金刚石薄膜之间的附着力过小的问题有一定的指导意义。     

CVD金刚石膜投资财务分析

文章从经济的角度,通过专业的财务分析,对CVD金刚石膜这一新型材料的投资价值进行研究。研究认为,CVD金刚石膜将成为金刚石材料未来发展的主流,其材料和制品具有广阔的市场前景。因此,投资CVD金刚石膜将获得丰厚的经济回报。     

在MQ1350A磨床上磨削高精度抛光辊

通过选用合理的砂轮、磨削工艺参数、磨削液等并进行适当的修整砂轮、调整与平衡磨床,即可在MQ1350A普通外圆磨床上磨削修复进口1450冷轧机抛光辊。经分析磨削结果可知,在MQ1350A普通外圆磨床上磨削高精度要求的进口1450冷轧机抛光辊是完全可行的。     

砷化镓上生长金刚石薄膜的研究

以CH4和H2为气源,用微波辅助等离子体装置,在10.0 mm×7.0 mm的砷化镓基底上沉积了CVD金刚石薄膜,用扫描电子显微镜观察沉积效果,拉曼光谱表征沉积质量,分析薄膜附着力与砷化镓材料性能的关系。结果表明,当基体温度为600℃,气压为5 kPa,甲烷浓度为2.0%时,在砷化镓片表面上沉积出了CVD金刚石薄膜,晶粒尺寸均匀,晶形完整、规则,晶界非常清晰。     

CVD金刚石薄膜技术发展现状及展望(下)

简要描述了CVD金刚石薄膜技术的发展历程。介绍了纳米特别是超纳米金刚石膜、CVD金刚石大单晶的技术特点及其应用。超纳米金刚石膜在MEMS(微机电系统)、电化学和生物医学上的应用和CVD金刚石大单晶是当前的研究热点。简言之,金刚石的发展向着更大或者更小的方向深入进行,即"非大即小"。     

Recent IBIC measurements on epitaxial CVD diamond

Frontal IBIC (Ion Beam Induced Current) mesurements have been carried out on new single crystal epitaxial CVD diamond. The sample consists of about 100 μm synthetic diamond grown by microwave CVD on a 300 μm thick, low cost, HPHT diamond substrate (see Balducci et al. – this conference). Both proton and alpha microbeams of energies 3 and 4.5 MeV have been used, with a beam diameter spot of about 1.5–3 μm. Scanned areas varied from 450 μm × 450 μm down to 150 μm × 150 μm and the homogeneity of charge collection efficiency (cce) was suitably monitored. At voltage bias of 80–100 V, the average cce was in the range 42–50%. Depending on the scanned surface area and on the beam type, energy resolutions FWHM from 1.3% to 4.1% FWHM have been obtained, even at counting rates as high as 700 cps.     

CVD diamond for spintronics

The ability to minimise, control and manipulate defects in CVD diamond has grown rapidly over the last ten years. The application which best illustrates this is probably that of quantum information processing (QIP) or ‘diamond spintronics’. QIP is a rapidly growing area of research, covering diverse activities from computing and code breaking to encrypted communication. All these applications need ‘quantum bits’ or qubits where the quantum information can be maintained and controlled. Controlled defects in an otherwise high perfection diamond lattice are rapidly becoming a leading contender for qubits, and offer many advantages over alternative solutions. The most promising defect is the NV⁻ defect whose unique properties allow the state of its electron spin to be optically written to and read from. Substantial developments in the synthesis of CVD diamond have produced diamond lattices with a high degree of perfection, such that the electron spin of this centre exhibits very long room temperature decoherence times (T₂) in excess of 1 ms. This paper gives a brief review of the advantages and challenges of using CVD diamond as a qubit host. Lastly the various qubit applications being considered for diamond are discussed, highlighting the current state of development including the recent development of high sensitivity magnetometers.     

UV Schottky photodiode on boron-doped CVD diamond films

We report on experimental study of photosensitivity and Q-DLTS spectra of polycrystalline CVD diamond UV photodetectors. The measured characteristics of Schottky photodiode on boron-doped diamond films are compared with those obtained for planar photoconductive structures (photoresistor type) based on undoped CVD diamond. The Schottky photodiode exhibited a sharp cut-off in photoresponse with spectral discrimination ratio (between wavelengths of 190 nm and 700 nm) as high as 5 · 10⁵ at zero bias voltage (at zero dark current). The photodiode showed the maximum of photoresponse at wavelength < 190 nm, and a low density of trapping and recombination centers as evaluated with the Q-DLTS technique. The devices demonstrated the photoresponsivity at 190 nm from 0.03 to 0.1 A/W with quantum yield of 0.20 to 0.67 in closed circuit, while the photovoltage ≥ 1.6 V was measured in open circuit regime. Another type of UV detector, the planar photoconductive structures with interdigitizing ohmic electrodes fabricated on undoped diamond film and operated under a bias voltage, revealed a higher density of (surface) defect centers and the maximum photoresponse at  210 nm wavelength. A strong influence of UV light illumination on the Q-DLTS spectra of the planar photoconductive structures was observed. This effect can be used for development of new UV detectors and dosimeters based on the Q-DLTS signal measurements.     

论化学气相沉积(CVD)金刚石技术最新发展

描述了国内外化学气相沉积(CVD)金刚石技术研究及产业最新进展,介绍了CVD金刚石的基本生产方法、加工手段、产品类型及应用领域。通过对国内外CVD金刚石技术及产品研究最新进展情况的介绍,指出了我国与世界先进的(CVD)金刚石技术存在的差距,阐述了CVD金刚石市场发展存在的问题并提出改进的建议。     

Secondary electron emission from CVD diamond films

Secondary electron emission from boron doped diamond polycrystalline membranes (hole concentration 5×10¹⁸ cm⁻³), prepared by microwave plasma assisted CVD, was investigated in both the reflection and transmission configurations. The model of secondary electrons behavior taking into account the distribution and diffusion mechanism of secondary electrons is proposed to explain the yield dependencies on primary electron energy in both configurations. The model predicts the SEE yield K=19 at the primary electron energy E₀ close to 1 keV for reflection configuration and K=3–7 at E₀=15–30 keV for transmission configuration for polycrystalline films used in the study. Experimental measurements of the SEE yield vs. primary electron energy (18 at E₀=950 eV for the reflection scheme and 3.5–4 at E₀=25 keV for the transmission one) are found to accord well with the theoretical results. Estimations, which were made using the model, show that SEE yield in transmission configuration can be increased up to 60 for the primary electron energy of about 10 keV. Since such high yields in transmission scheme may be obtained in monocrystalline membrane, another approach using porous polycrystalline diamond membranes is considered. Porous diamond membranes having SEE yield in transmission scheme of more than 10 at the primary electron energy E₀=1 keV were fabricated.     

Ex-situ spectroscopic ellipsometry studies of micron thick CVD diamond films

Micron thick diamond films have been studied by spectroscopic ellipsometry (SE). The films were grown, on previously prepared Si(100) substrates, by the plasma enhanced chemical vapor deposition (PECVD) technique. Ex situ SE measurements were carried out on samples grown under different conditions, such as substrate temperature and methane fraction in the gas mixture. An optical model consisting of five layers was constructed in order to explain the SE spectra and to provide the optical and structural parameters of the films. This model was deduced from results of various measurements performed by other characterization techniques (Raman spectroscopy, scanning electron microscopy, atomic force microscopy and positron annihilation spectroscopy) which have revealed the optical and structural parameters of the samples. Its sensitivity to the surface and interface roughness as well as to the absorption of the nondiamond phase of the film is demonstrated. Several values of the percentage of the nondiamond phase can be obtained, with the same fit quality, however, depending on the amorphous carbon reference used in the model. These references were obtained by performing SE measurements on various amorphous carbon films. Finally, our SE analysis has allowed us to monitor the lateral homogeneity of the thickness, surface and interface roughness and nondiamond phase concentration over the diamond film.