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1.
In this work, we report a freeform shaped active‐matrix organic light‐emitting diode (AMOLED) display based on low‐temperature polycrystalline silicon technology. It was found that our AMOLED, developed with a unique pixel structure, can withstand in various desired shapes featuring its stretchable property with no degradation of image quality and device characteristics. We demonstrated unprecedented convex/concave shape of the 9.1‐inch AMOLED display by low‐temperature thermoforming process. The AMOLED display with freeform design is promising for future display applications such as automotive, Internet of things devices, and wearable electronics.  相似文献   

2.
A prototype 13.3‐inch 8k4k 664‐ppi high‐resolution foldable organic light emitting diode display is constructed. C‐axis aligned a‐b‐plane‐anchored crystal In–Ga–Zn oxide field effect transistors designed using a 1.5‐µm rule process are used in the backplane. Each pixel circuit has three transistors and one capacitor, and an external circuit is used to correct pixel current.  相似文献   

3.
A foldable organic light‐emitting diode display integrating a touch sensor is fabricated. The touch sensor has an in‐cell structure where metal‐mesh sensor electrodes are formed in a counter substrate. It is demonstrated that touch on the entire panel surface, including a bent portion, is detected and that the touch panel operates correctly after 100,000 folding operations with a radius of curvature of 5 mm.  相似文献   

4.
Abstract— By using current technology, it is possible to design and fabricate performance‐competitive TV‐sized AMOLED displays. In this paper, the system design considerations are described that lead to the selection of the device architecture (including a stacked white OLED‐emitting unit), the backplane technology [an amorphous Si (a‐Si) backplane with compensation for TFT degradation], and module design (for long life and low cost). The resulting AMOLED displays will meet performance and lifetime requirements, and will be manufacturing cost‐competitive for TV applications. A high‐performance 14‐in. AMOLED display was fabricated by using an in‐line OLED deposition machine to demonstrate some of these approaches. The chosen OLED technologies are scalable to larger glass substrate sizes compatible with existing a‐Si backplane fabs.  相似文献   

5.
We present a thin‐film dual‐layer bottom barrier on polyimide that is compatible with 350°C backplane processing for organic light‐emitting diode displays and that can facilitate foldable active‐matrix organic light‐emitting diode devices with a bending radius of <2 mm. We demonstrate organic light‐emitting diodes that survive bending over 0.5 mm radius for 10.000× based on the high‐temperature bottom barrier. Furthermore, we show compatibility of the bottom barrier with the backplane process by fabricating active‐matrix organic light‐emitting diode displays on GEN1‐sized substrates.  相似文献   

6.
Abstract— Organic thin‐film‐transistor (OTFT) technologies have been developed to achieve a flexible backplane for driving full‐color organic light‐emitting diodes (OLEDs) with a resolution of 80 ppi. The full‐color pixel structure can be attained by using a combination of top‐emission OLEDs and fine‐patterned OTFTs. The fine‐patterned OTFTs are integrated by utilizing an organic semiconductor (OSC) separator, which is an insulating wall structure made of an organic insulator. Organic insulators are actively used for the OTFT integration, as well as for the separator, in order to enhance the mechanical flexibility of the OTFT backplane. By using these technologies, active‐matrix OLED (AMOLED) displays can be driven by the developed OTFT backplane even when they are mechanically flexed.  相似文献   

7.
Abstract— The image quality of an OTFT‐driven flexible AMOLED display has been improved by enhancing the performance of OTFTs and OLEDs. To reduce the operating voltage of OTFTs on a plastic film, Ta2O5 with a high dielectric constant was used as a gate insulator. The organic semiconductor layer of the OTFT was successfully patterned by a polymer separator, which is an isolating wall structure using an organic material. The OTFT performance, such as its current on/off ratio, carrier mobility, and spatial uniformity on the backplane, was enhanced. A highly efficient phosphorescent OLED was used as a light‐emission device. A very thin molybdenum oxide film was introduced as a carrier‐injection layer on a pixel electrode to reduce the operating voltage of the OLED. After an OTFT‐driven flexible AMOLED display was fabricated, the luminance and uniformity on the display was improved. The fabricated display also showed clear moving images, even when it was bent at a low operating voltage.  相似文献   

8.
As the market share of automotive display increased, special used displays are required; BOE developed 12.3‐inch automotive free‐form curved cluster. For this product, free‐form and curved design can be matched in vehicle preferably. Meanwhile, it is designed in automotive class, which means that this product will perform excellently in severe environment.  相似文献   

9.
Abstract— A high‐resolution autostereoscopic 3‐D projection display with a polarization‐control space dividing the iris‐plane liquid‐crystal shutter is proposed. The polarization‐control iris‐plane shutter can control the direction of stereo images without reducing the image quality of the microdis‐play. This autostereoscopic 3‐D projection display is 2‐D/3‐D switchable and has a high resolution and high luminance. In addition, it has no cross‐talk between the left and right viewing zones, a simple structure, and the capability to show multi‐view images.  相似文献   

10.
A transflective blue‐phase liquid crystal display (TRBP‐LCD) based on fringe in‐plane switching (FIS) electrodes is proposed. The proposed structure generates combined fringe and in‐plane electric fields that cause more liquid crystal (LC) molecules to reorient almost in plane above and between the pixel electrodes. The fringe field is mainly generated in the transmissive (T) region, and the horizontal electric field is mainly generated in the reflective (R) region. By optimizing the width of the pixel electrodes and the gap between two adjacent pixel electrodes, the different electric field intensity in the T and R regions contribute to balance the optical phase retardation between the T and R regions. As a result, the proposed TRBP‐LCD exhibits a low operating voltage and high optical efficiency, while it preserves a relatively simple fabrication process.  相似文献   

11.
An 8‐in. flexible active‐matrix organic light‐emitting diode (AMOLED) display driven by oxide thin‐film transistors (TFTs) has been developed. In‐Ga‐Zn‐O (IGZO)‐TFTs used as driving devices were fabricated directly on a plastic film at a low temperature below 200 °C. To form a SiOx layer for use as the gate insulator of the TFTs, direct current pulse sputtering was used for the deposition at a low temperature. The fabricated TFT shows a good transfer characteristic and enough carrier mobility to drive OLED displays with Video Graphic Array pixels. A solution‐processable photo‐sensitive polymer was also used as a passivation layer of the TFTs. Furthermore, a high‐performance phosphorescent OLED was developed as a red‐light‐emitting device. Both lower power consumption and longer lifetime were achieved in the OLED, which used an efficient energy transfer from the host material to the guest material in the emission layer. By assembling these technologies, a flexible AMOLED display was fabricated on the plastic film. We obtained a clear and uniform moving color image on the display.  相似文献   

12.
Augmented reality (AR) display technology greatly enhances users' perception of and interaction with the real world by superimposing a computer‐generated virtual scene on the real physical world. The main problem of the state‐of‐the‐art 3D AR head‐mounted displays (HMDs) is the accommodation‐vergence conflict because the 2D images displayed by flat panel devices are at a fixed distance from the eyes. In this paper, we present a design for an optical see‐through HMD utilizing multi‐plane display technology for AR applications. This approach manages to provide correct depth information and solves the accommodation‐vergence conflict problem. In our system, a projector projects slices of a 3D scene onto a stack of polymer‐stabilized liquid crystal scattering shutters in time sequence to reconstruct the 3D scene. The polymer‐stabilized liquid crystal shutters have sub‐millisecond switching time that enables sufficient number of shutters to achieve high depth resolution. A proof‐of‐concept two‐plane optical see‐through HMD prototype is demonstrated. Our design can be made lightweight, compact, with high resolution, and large depth range from near the eye to infinity and thus holds great potential for fatigue‐free AR HMDs.  相似文献   

13.
Large flexible organic light‐emitting diode (OLED) display provides various electronic applications such as curved, bendable, rollable, and commercial display, because of its thinness, light weight, and design freedom. In this work, the process flow and key technologies to fabricate the world's first large size 77‐inch transparent flexible OLED display are introduced. “White OLED on TFT + color filter” method is used to fabricate the aforementioned display. On both thin‐film transistor and color filter substrates, transparent polyimide (PI) was used as plastic substrate with multi‐barrier. In case of a transparent flexible display, the multi‐barrier is required for the additional consideration to overcome the decrease of transmittance due to the difference in refractive index of the conventional multi‐barrier. We developed the special multi‐barrier to increase transparency with superior water vapor transition rate characteristic. The optimized amorphous indium gallium zinc oxide thin‐film transistors were employed on the multi‐barrier, and it shows the highly uniform electrical performance and reliability on plastic substrate. Also, the typical panel failure mechanism during laser lift‐off process caused by a particle in PI is studied, and a sacrificial layer was suggested between PI and a carrier glass to reduce the panel failure. Finally, we successfully realized the world's first 77‐inch transparent flexible OLED display with ultra‐high‐definition resolution, which can be rolled up to a radius of 80 mm with a transmittance of 40%.  相似文献   

14.
Abstract— A flexible phosphorescent color active‐matrix organic light‐emitting‐diode (AMOLED) display on a plastic substrate has been fabricated. Phosphorescent polymer materials are used for the emitting layer, which is patterned using ink‐jet printing. A mixed solvent system with a high‐viscosity solvent is used for ink formulation to obtain jetting reliability. The effects of evaporation and the baking condition on the film profile and OLED performances were investigated. An organic thin‐film‐transistor (OTFT) backplane, fabricated using pentacene, is used to drive the OLEDs. The OTFT exhibited a current on/off ratio of 106 and a mobility of 0.1 cm2/V‐sec. Color moving images were successfully shown on the fabricated display.  相似文献   

15.
By applying the curve‐type thin film transistor (TFT) with longitudinal strain, TFT parameters do change little down to the 2R bending. The mobility variation range reduces down to 4% compared with 28% of the line‐type channel with transverse strain. The smaller variation is preferred for a high quality display. We clarified that majority carrier's effective mass and scattering rate are dominant factors influencing the bended TFT's performance, which can be controlled by the strain orientation and channel shape. This understanding and improvement was embedded in the 5.8″ flexible QHD active matrix organic light emitting diode panel with multi edge curvature of Galaxy S8. Through this achievement, we made our flexible premium active matrix organic light emitting diode panels more performable, reliable, and highly productive in small R bending circumstance.  相似文献   

16.
Abstract— The direct voltage programming of active‐matrix organic light‐emitting‐diode (AMOLED) pixels with n‐channel amorphous‐Si (a‐Si) TFTs requires a contact between the driving TFT and the OLED cathode. Current processing constraints only permit connecting the driving TFT to the OLED anode. Here, a new “inverted” integration technique which makes the direct programming possible by connecting the driver n‐channel a‐Si TFT to the OLED cathode is demonstrated. As a result, the pixel drive current increases by an order of magnitude for the same data voltages and the pixel data voltage for turn‐on drops by several volts. In addition, the pixel drive current becomes independent of the OLED characteristics so that OLED aging does not affect the pixel current. Furthermore, the new integration technique is modified to allow substrate rotation during OLED evaporation to improve the pixel yield and uniformity. The new integration technique is important for realizing active‐matrix OLED displays with a‐Si technology and conventional bottom‐anode OLEDs.  相似文献   

17.
Two different approaches to realize high‐resolution active‐matrix organic light‐emitting device (AMOLED) display were delivered. By adopting specific organic light emitting diode (OLED) structure with pre‐pattern electrode and the utilization of color filter, we successfully simplify the fabrication process with fine metal mask (FMM)‐free or one‐FMM solutions. Each approach was demonstrated with a 4.4″ panel with 413 ppi pixel density based on real stripe RGB. Both panels possessed low power consumption, low reflectivity, and superior NTSC performance. Because the utilization of FMM was avoided or reduced, higher production yield, higher throughput, and lower cost could be achieved. Therefore, these two approaches are very promising for mass production of high‐resolution AMOLED display.  相似文献   

18.
In this study, the device structure of a white tandem organic light‐emitting diode (OLED) was changed to control the emission area and thereby achieve less luminance decay. A long‐life 13.5‐inch 4 K flexible c‐axis‐aligned crystal oxide semiconductor (CAAC‐OS) active‐matrix OLED with less color shift and high resolution was fabricated using this long‐life white OLED, transfer technology, and a CAAC‐OS field‐effect transistor.  相似文献   

19.
We fabricated new 2.78‐in 1058‐ppi organic light‐emitting diode (OLED) displays. The displays used OLED devices with a tandem structure and a single structure and a field effect transistor (FET) using c‐axis aligned crystalline In–Ga–Zn–O (CAAC‐IGZO) for an active layer and employing the 1.5‐µm rule over a glass substrate. Even in the displays with such high resolution exceeding 1000 ppi, crosstalk that was observed in the lower luminance region was suppressed. The displays achieved high color reproducibility and reduced viewing angle dependence.  相似文献   

20.
We have developed an inkjet process for laying down an organic semiconductor layer in organic thin‐film transistors (OTFTs). The organic semiconductor crystallinity was improved by adjusting the contact angles of the bank, the gate insulator, and the source/drain electrodes. The threshold voltage of the OTFT was controlled by means of several surface treatments of the silicon dioxide gate insulator. The OTFTs showed a high mobility of 2.5 cm2/Vs and uniform threshold voltages of ?0.4 ± 0.7 V. We also fabricated a 4‐in., 80‐ppi active‐matrix organic light‐emitting diode on a glass substrate that showed good luminance uniformity and high moving picture quality.  相似文献   

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