A novel gate driver circuit for depletion‐mode a‐IGZO TFTs

In this paper, a novel gate driver circuit, which can achieve high reliability for depletion mode in a‐InGaZnO thin‐film transistors (TFTs), was proposed. To prevent the leakage current paths for Q node effectively, the new driving method was proposed by adopting the negative gate‐to‐source voltage (V_GS) value for pull‐down units. The results showed all the V_OUT voltage waveforms were maintained at VGH voltage despite depletion‐mode operation. The proposed circuit could also obtain stable V_OUT voltage when the threshold voltage for all TFTs was changed from ?6.5 to +11.5 V. Therefore, the circuit can achieve high reliability regardless of threshold voltage value for a‐IGZO TFTs. In addition, the output characteristics and total power consumption were shown for the alternating current (AC)–driven and direct current (DC)–driven methods based on 120‐Hz full‐HD graphics (1920 × 1080) display panel. The results showed that the AC‐driven method could achieve improved V_OUT characteristics compared with DC‐driven method since the leakage current path for Q node can be completely eliminated. Although power consumption of the AC‐driven method can be slightly increased compared with the DC‐driven method for enhancement mode, consumption can be lower when the operation has depletion‐mode characteristics by preventing a leakage current path for pull‐down units. Consequently, the proposed gate driver circuit can overcome the problems caused by the characteristics of a‐IGZO TFTs.     

A 5291‐ppi organic light‐emitting diode display using field‐effect transistors including a c‐axis aligned crystalline oxide semiconductor

C‐axis‐aligned crystalline‐oxide semiconductor field‐effect transistor (CAAC‐OS FET) can be scaled down to a width and a length of 60 nm. We fabricated an organic light‐emitting diode (OLED) display with more than 5000 ppi, which is required in virtual reality (VR) display applications, using CAAC‐OS FETs as the backplane.     

Design of a low‐power‐consumption a‐IGZO TFT‐based Vcom driver circuit with long‐term reliability

Abstract— An amorphous‐InGaZnO (a‐IGZO) thin‐film transistor (TFT)‐based Vcom driver circuit that has long‐term reliability and can be integrated with the pixel array on a panel has been designed. Owing to the Vcom inversion, the power consumed by the proposed driving scheme is 40% less than that consumed by the conventional line‐inversion method. The high mobility (>10 cm²/V‐sec) of the a‐IGZO TFTs allows the integration of devices with small channel widths (<750 μm) and thus keeps the overall device size small, which is important for displays with narrow bezels. The lifetime of the Vcom driver is improved by AC driving (by clocking the n‐th and (n + 1)‐th frame with 20 and 0 V, respectively) of the buffer TFTs.     

Current programming pixel circuit and data‐driver design for active‐matrix organic light‐emitting diodes

Abstract— We propose a new pixel design for active‐matrix organic light‐emitting diodes (AMOLEDs) employing five polycrystalline thin‐film transistors (poly‐Si TFTs) and one capacitor, which decreases the data current considerably in order to reduce the charging time compared with that of conventional current‐mirror structures. Also, the new pixel design compensates the threshold‐voltage degradation of OLEDs caused by continuous operation and the non‐uniformity of poly‐Si TFTs due to excimer‐laser annealing. The proposed pixel circuit was verified by SPICE simulation, based on measured TFT and OLED characteristics. We also propose current‐data‐driver circuitry that reduces the number of shift‐register signals for addressing the current data driver by one‐half.     

Design of dual‐outputs‐single‐stage a‐Si:H TFT gate driver for high resolution TFT‐LCD application

A new gate driver has been designed and fabricated by amorphous silicon technology. With utilizing the concept of sharing the noise free block in a single stage for gate driver, dual‐outputs signals could be generated in sequence. By increasing the number of output circuit block in proposed gate driver, number of outputs per stage could also be adding that improves the efficiency for area reduction. Besides, using single driving thin‐film‐transistor (TFT) for charging and discharging, the area of circuit is also decreased by diminishing the size of pulling down TFT. Moreover, the proposed gate driver has been successfully demonstrated in a 5.5‐inch Full HD (1080xRGBx1920) TFT‐liquid‐crystal display panel and passed reliability tests of the supporting foundry.     

Fabrication of flexible organic light‐emitting‐diode display with a flexible color filter driven by In—Ga—Zn—Oxide TFTs

Abstract— A novel flexible active‐matrix organic light‐emitting‐diode (OLED) display fabricated on planarized stainless—used‐steel substrates with a resolution of 85 dpi in a 4.7‐in. active area has been demonstrated. Amorphous indium—gallium—zinc—oxide thin‐film transistors were used as the backplane for the OLED display with high device performance, high electrical stability, and long lifetime. A full‐color moving image at a frame frequency of 60 Hz was also realized by using a flexible color filter directly patterned on a plastic substrate with a white OLED as the light source.     

A high image quality organic light‐emitting diode display with motion blur reduction for ultrahigh resolution and premium TVs

In this paper, we present a high image quality organic light‐emitting diode (OLED) display with motion blur reduction technology. Our latest work includes driving method that reduces motion blur using an adaptive black data insertion, brightness compensation technology, the simple structure pixel with low capacitance coupling for horizontal noise, and the multifunction integrated gate driver. The moving picture response time (MPRT) value of the OLED display panel with a fast response time was significantly affected by the frame frequency and the compensation driving method. The MPRT value of the large‐size OLED display panels was significantly decreased by using the integrated gate driver circuit with an MPRT reduction method. The decrease in the MPRT value originated from the turning of the emitting pixels off in advance resulting from providing black data. The integrated gate drivers were designed to achieve the normal display, the black data insertion, and the compensation mode. The MPRT value of the 65‐in. ultrahigh‐definition (UHD) OLED panels was decreased to 3.4 ms by using an integrated gate driver circuit. The motion blur of large‐size OLED display panels was significantly reduced due to a decrease in the MPRT value.