Maximum likelihood least squares‐based iterative methods for output‐error bilinear‐parameter models with colored noises

This article is concerned with the parameter identification of output‐error bilinear‐parameter models with colored noises from measurement data. An auxiliary model least squares‐based iterative method is developed through the overparameterization model. It examines the difficulty of estimating the overparameterized vector, which usually presents a heavy computational burden in the identification process. To overcome this drawback, a parameter separation technique is introduced and the nonlinear model is reformulated as a refined identification model through eliminating the crossmultiplying terms. In this regard, a parameter separation least squares‐based iterative (PS‐LSI) algorithm is derived by avoiding estimating the redundant parameters. On the basis of the PS‐LSI algorithm, we derive a maximum likelihood least squares‐based iterative method to further improve the numerical accuracy. The identification is dependent on the formulation of a pseudolinear regression relationship, which contains two linear prefilters constructed from the system and noise models. The performance of this proposed method is confirmed by the numerical simulations as well as direct comparisons with other existing algorithms.     

A natural redundancy‐resolution for 3‐D multi‐joint reaching under the gravity effect

A simple control method for 3‐dimensional multi‐joint reaching movements under redundancy of degrees of freedom (DOF) is proposed, which need neither introduce any performance index to solve inverse kinematics uniquely nor calculate pseudo‐inverse of the Jacobian matrix of task coordinates with respect to joint coordinates. The proposed control signal is composed of linear superposition of three terms: (1) angular‐velocity feedback for damping shaping, (2) task‐space position error feedback with a single stiffness parameter, and (3) compensation for gravity force on the basis of estimates for uncertain parameters of the potential energy without calculation any inverse joint position to the target in task space. Through a theoretical analysis of the closed‐loop dynamics and a variety of computer simulations by using a whole arm model with five DOFs, the importance of synergistic adjustments of damping factors as well as its relation to selection of the stiffness parameter is pointed out. It is shown that if damping factors are chosen synergistically corresponding to the inertia matrix at the initial time and the stiffness parameter then the endpoint converges asymptotically to the target position and reaches it smoothly without incurring any self‐motion. © 2005 Wiley Periodicals, Inc.     

Sensitivity analysis of critical parameters affecting the efficacy of microwave ablation using Taguchi method

Microwave ablation (MWA) is a minimally invasive thermal treatment modality that has already evolved as a promising alternative to radiofrequency ablation for treating different types of malignant and benign tumors, especially ≥3 cm in diameter. The efficacy of thermal ablative therapies is mainly judged by the ablation volume attained post‐ablation. In this regards, the present study aims at analyzing the influence of six critical parameters, as follows, relative permittivity, electrical conductivity, volumetric heat capacity, thermal conductivity, blood perfusion rate, and applied power on the ablation volume attained during MWA. Taguchi's L27 orthogonal array has been adopted for the current problem with six input variables having three levels each. The electric and thermophysical properties considered in the study have been derived from liver, lung, breast, and kidney. Finite element method (FEM) based numerical simulations of MWA have been conducted on three‐dimensional homogeneous model of biological tissue using coaxial single slot microwave antenna. Further, the ranking and the contribution of each parameter on the ablation volume attained during MWA have been quantified using analysis of variance. The corollaries drawn from the study would be useful to the clinical practitioners during the treatment planning stage of the MWA.     

Performance Analysis of The Auxiliary‐Model‐Based Multi‐Innovation Stochastic Newton Recursive Algorithm for Dual‐Rate Systems

The stochastic Newton recursive algorithm is studied for dual‐rate system identification. Owing to a lack of intersample measurements, the single‐rate model cannot be identified directly. The auxiliary model technique is adopted to provide the intersample estimations to guarantee the recursion process continues. Intersample estimations have a great influence on the convergence of parameter estimations, and one‐step innovation may lead to a large fluctuation or even divergence during the recursion. In the meantime, the sample covariance matrix may appear singular. The recursive process would cease for these reasons. In order to guarantee the recursion process and to also improve estimation accuracy, multi‐innovation is utilized for correcting the parameter estimations. Combining the auxiliary model and multi‐innovation theory, the auxiliary‐model‐based multi‐innovation stochastic Newton recursive algorithm is proposed for time‐invariant dual‐rate systems. The consistency of this algorithm is analyzed in detail. The final simulations confirm the effectiveness of the proposed algorithm.     

ULTRA‐FINE TRACKING CONTROL ON PIEZOELECTRIC ACTUATED MOTION STAGE USING PIEZOELECTRIC HYSTERETIC MODEL

The tracking control accuracy of the piezoelectric actuator (PEA) is limited due to its inherent hysteresis nonlinearity. A new piezoelectric‐actuator model is synthesized based on two first‐order transfer systems in parallel with two tuned parameters determined from one experiment. Two open‐loop tracking controllers are implemented with the proposed model to compensate the hysteresis of linear positioning. Numerical simulations and experimental tests on the tracking of sinusoidal and triangular waveforms with signal frequencies ranging from 1Hz to 30 Hz are revisited and compared with the conventional Bouc‐Wen and Duhem models. Experimental results reveal that the RMS tracking error can be reduced to less than 2% of the maximum traveling distance without any feedback sensor. When a piezoelectric actuated on a two Degree‐Of‐Freedom (DOF) monolithic motion stage was employed, the RMS tracking error was 50 nm within the measured sensor accuracy.     

A de‐embedding method with matrix rectification and influences of residual errors on model parameters extraction of InP HEMTs

As the cutoff frequency of InP HEMTs enters the terahertz band, high frequency measurement and modeling techniques in hundreds of gigahertz become urgent needs for further millimeter monolithic integrated circuits design. We proposed a new de‐embedding method linking device measurements and modeling based on full EM simulation data acquired from HFSS and advanced design system (ADS). The simulation results for passive dummy structures are well consistent with experiments, and the de‐embedding method is proved very effective for a resistive passive device with high distributed embedding surroundings in frequency range below 40 GHz. Based on these experimental facts, the EM simulations were extended up to 300 GHz and corresponding de‐embedding deviation was further investigated. Results show that the proposed de‐embedding method has very high accuracy in the whole frequency region with a maximum S‐parameters deviation of only 2.58%. However, further analysis proves that the small residual errors still significantly affect extracted small signal model parameters of InP HEMTs especially for transit time τ. Thus, further improvements on de‐embedding accuracy or careful considerations of more error functions in modeling process are necessary for obtaining physically meaningful model parameters.     

A parameter extraction method of the PIN diode for physics‐based circuit simulation over a wide frequency range

The accurate physical parameters of the semiconductor devices are critical to the physics‐based circuit simulation, which solves the carrier transport equations to model the semiconductor devices. However, the conventional method extracts physical parameters from low‐frequency measurements such as the DC I‐V curve, which cannot work at high frequencies. To overcome this problem, we propose a physical parameter extraction method of the PIN diode working well from DC to microwave frequencies. Specifically, because the transit‐time effects are dependent on the working frequencies and input power levels, the operation modes of the PIN diode can be divided into three cases from DC to microwave frequencies; therefore, the proposed method extracts the parameters from three measured curves, including the DC I‐V curve, a small‐signal, and a large‐signal voltage waveform both at a microwave frequency. Experiments of a PIN diode SMP1330 circuit show that the error of the conventional method is about 45% at frequencies above 300 MHz, but the maximum error of the proposed method is only 9.5% from DC to 2 GHz. Moreover, the conventional method is unable to characterize the conductance modulation phenomenon, which leads to unexpected signal reflections in PIN limiter circuits and the missing of information in radio transceivers.     

A New Calibration Method for a Directly Driven 3<Emphasis Type="Underline">P</Emphasis>RR Positioning System

Calibration is one of the most important works for the parallel manipulator. The manufacturing and assembling errors will modify the designed parameters of the parallel mechanism, leading to the positioning errors. Calibration is an effective method for improving the accuracy of the parallel mechanism. It is vital to identify the parameters and calibrate the system aiming at improving the positioning accuracy. In order to build an object stage of the micro/nano operation system, a 3 degree-of-freedoms (DOFS) parallel mechanism has been designed and constructed, with combination of legs of the PRR type (the underline of the P represent the actuated joint), P and R representing prismatic and revolute pairs respectively (3PRR). Due to the space constraint, this 3PRR mechanism is built without the end-effector feedback, and must be calibrated for high accuracy positioning. The error model of the 3PRR mechanism has been derived and analyzed, and the error distribution mappings of the 3PRR mechanism are obtained. The calibration method based on the error model is investigated. Since some parameters are difficult to be identified by using the decoupling error model, the assistant measurements are proposed and utilized to compensate for this calibration method. Numerical simulations and experiments are carried out. The simulation results show that it is not enough to calibrate this system by using the calibration method based on error model only, and the experimental results demonstrate that the combined assistant measurements will achieve a better effect for calibration.     

Characterization of 2450‐MHz microwave thermal coagulation zone based on characteristic length growth model and shape variation factor

It is critical for microwave ablation (MWA) treatment planning to evaluate the changes of thermal coagulation zones. In MWA procedures, the shapes and sizes of thermal coagulation zones are gradually evolving over time. To this end, a novel characterization and mapping method of thermal coagulation zones is presented in this article. Firstly, finite element method (FEM) models of temperature distributions for 40, 45, 50, 55, and 60 W microwave ablations were built to derive thermal ablation data of ex vivo porcine livers and were compared with experimental results. Secondly, growth models of characteristic lengths were fitted. Finally, characterization functions of thermal coagulation zones were developed using these growth models. In addition, shape variation factors were incorporated to handle the minor shape variations of thermal coagulation zones. Experimental results showed that these characterization functions could accurately represent the changes of thermal coagulation zones. The standard deviations between prediction results and simulated values were less than 1 mm. The comparative results were statistically analyzed by paired t test (P > 0.05), indicating no significant differences. The proposed method can simply and effectively predict the changes of MWA coagulation zones with time, thus providing reliable coagulation dimensions for the thermal ablation therapies.     

Hybrid modeling of microwave devices using multi‐kernel support vector regression with prior knowledge

This article proposes a support‐vector hybrid modeling method of microwave devices when only a small number of measurements are available. In this method, a hybrid model of microwave device has been obtained by combining a coarse model and a support‐vector model, where the coarse model is complemented by a support‐vector model capable of correcting the difference between the measurements and the coarse model. The support‐vector model was developed using a novel algorithm. In the algorithm, multi‐kernel and prior knowledge from a calibrated simulator were incorporated into the framework of the linear programming support vector regression by utilizing multiple feature spaces and modifying the optimization formulation. The experimental results from two microwave devices show that the hybrid modeling can enhance the physical meaning of the support‐vector model and improve the modeling accuracy for a small dataset, and that the proposed algorithm shows great potential in some applications where sufficient experimental data is difficult and costly to obtain, but the prior knowledge from a simulation model is available. The hybrid modeling is suited to a microwave computer‐aided design tool or an automatic tuning robot. © 2014 Wiley Periodicals, Inc. Int J RF and Microwave CAE 25:219–228, 2015.     

Microwave frequency small‐signal equivalent circuit parameter extraction for AlInN/GaN MOSHEMT

This article presents an accurate and efficient extraction procedure for microwave frequency small‐signal equivalent circuit parameters of AlInN/GaN metal‐oxide‐semiconductor high electron mobility transistor (MOSHEMT). The parameter extraction technique is based on the combination of conventional and optimization methods using the computer‐aided modeling approach. The S‐, Y‐, and Z‐ parameters of the model are extracted from extensive dynamic AC simulation of the proposed device. From the extracted Y‐ and Z‐ parameters the pad capacitances, parasitic inductances and resistances are extracted by operating the device at low and high frequency pinch‐off condition depending upon requirement. Then, the intrinsic elements are extracted quasi analytically by de‐embedding the extrinsic parameters. S‐parameter simulation of the developed small‐signal equivalent circuit model is carried out and is compared with TCAD device simulation results to validate the model. The gradient based optimization approach is used to optimize the small‐signal parameters to minimize the error between developed SSEC model and device simulation based s‐parameters. The microwave characteristics of optimized SSEC model is carried out (f_T = 169 GHz and f_max = 182 GHz) and compared with experimental data available from literature to validate the model.     

Complete parasitic‐capacitance‐shell extraction of high‐frequency switch‐HEMT equivalent‐circuit model

This paper presents a new solution to a particular problem of high electron‐mobility transistor (HEMT) equivalent‐circuit modeling, that is, complete parasitic‐capacitance‐shell extraction of high‐frequency single‐gate and dual‐gate switch‐based HEMTs, which is very important to the accuracy of high‐frequency HEMT switch models, but not important in the conventional common‐source HEMT modeling for amplifier‐applications. A full‐wave electromagnetic (EM) analysis based method is proposed to analytically extract the complete parasitic‐capacitance‐shell of single‐gate and dual‐gate switch‐based HEMTs. All the 6 parasitic capacitances of the single‐gate switch‐based HEMT and all the 10 parasitic capacitances of the dual‐gate switch‐based HEMT are extracted by linear equations. No resistance parameter is needed to calculate the capacitance‐to‐ground and the interelectrode‐capacitance, and for the first time, all the 10 parasitic capacitances of the dual‐gate switch‐based HEMT are completely considered and analytically extracted. Then, a consistent and systematic modeling procedure of single‐gate and dual‐gate switch‐based HEMT is verified. With the complete parasitic‐capacitance‐shells extracted, the accurate intrinsic model of the single‐gate HEMT can be directly embedded into the parasitic‐shell of the dual‐gate HEMT. The predicted scattering parameters of the single‐gate and dual‐gate series switches fit well with the measurements up to 40 GHz, and accurate linear scalability are also found.     

Space mapping optimization of waveguide filters using finite element and mode‐matching electromagnetic simulators

For the first time in design optimization of microwave circuits, the aggressive space mapping (SM) optimization technique is applied to automatically align electromagnetic (EM) models based on hybrid mode‐matching/network theory simulations with models based on finite‐element (FEM) simulations. SM optimization of an H‐plane resonator filter with rounded corners illustrates the advantages as well as the challenges of the approach. The parameter extraction phase of SM is given special attention. The impact of selecting responses and error functions on the convergence and uniqueness of parameter extraction is discussed. A statistical approach to parameter extraction involving 𝓁₁ and penalty concepts facilitates a key requirement by SM for uniqueness and consistency. A multipoint parameter extraction approach to sharpening the solution uniqueness and improving the SM convergence is also introduced. Once the mapping is established, the effects of manufacturing tolerances are rapidly estimated with the FEM accuracy. SM has also been successfully applied to optimize waveguide transformers using two hybrid mode‐matching/network theory models: a coarse model using very few modes and a fine model using many modes to represent discontinuities. ©1999 John Wiley & Sons, Inc. Int J RF and Microwave CAE 9: 54–70, 1999.     

Wideband model of on‐chip CMOS interconnects using space‐mapping technique

A new wideband model for on‐chip complementary metal–oxide–semiconductor (CMOS) interconnects is developed by virtue of a space‐mapping neural network (SMNN) technique. In this approach, two subneural networks are used for improving the reliability and generalization ability of the model. This approach also presents a new methodology for data generation and training of the two neural networks. Two different structures are used for the two subneural networks to address different physical effects. Instead of the S parameters, the admittances of sub‐block neural networks are used as optimization targets for training so that different physical effects can be addressed individually. This model is capable of featuring frequency‐variant characteristics of radio‐frequency interconnects in terms of frequency‐independent circuit components with two subneural networks. In comparison with results from rigorous electromagnetic (EM) simulations, this SMNN model can achieve good accuracy with an average error less than 2% up to 40 GHz. Moreover, it has much enhanced learning and generalization capabilities and as fast as equivalent circuit while preserves the accuracy of detailed EM simulations. © 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2011.     

Computer‐aided diagnosis of lossy microwave coupled resonators filters

A method is presented for extracting the coupling matrix (CM) and the unloaded Q from the measured (or electromagnetic simulated) scattering parameters of a lossy coupled resonators bandpass filter. The method can be used for computer‐aided tuning of a microwave filter. The method consists of two elements: 1) a three‐parameter optimization method is proposed to obtain the unloaded Q (assuming all the resonators with the same unloaded Q) and to remove the phase shift of the measured S‐parameters caused by the phase loading and the transmission lines at the input/output ports of a filter; 2) the Cauchy method is used for determining characteristic polynomial models of the S‐parameters of a microwave filter in the normalized low‐pass frequency domain. Once the characteristic polynomials of the S‐parameters without phase‐shift effects are determined, the CM of a filter with a given topology can be extracted using well‐established techniques. Three diagnosis examples illustrate the validity of the proposed method. © 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2011.     

Modeling double‐side printed meander‐line inductors on printed circuit boards

A lumped element model for a double‐side printed meander‐line inductor with closed‐ form expressions for the electrical model parameters L, C, R_l, and R_c is presented. These structures are cheaper than coils and need less area per unit of inductance than single‐side printed meander‐line inductors. The model has been validated with measurements from 30 to 1000 MHz, finding a mean error in the inductance parameter of about 1%. © 2003 Wiley Periodicals, Inc. Int J RF and Microwave CAE 13: 105–112, 2003.     

基于电阻抗谱特性与集成神经网络的天然气水合物饱和度软测量模型

含天然气水合物饱和度的计算是储层优选和资源量评估的关键参数,针对目前数据解释模型计算精度低以及模型输入参数少等问题,提出了一种基于电阻抗特性参数和集成神经网络的软测量模型建立方法。在对电阻抗谱数据进行预处理、特征参数提取以及选择的基础上形成了样本集,针对四对传感器分别设计了BP神经网络,采用平均法作为集成策略将四个BP网络作为子网络进行集成得到集成网络模型。模型测试结果表明：通过集成网络模型计算得到的含水合物饱和度值平均相对误差3.33%、平均绝对误差0.0014、均方根误差为6.56%,三项误差指标均低于各个子网络的计算误差。在宽频范围内对含水合物沉积物进行电阻抗谱测试能够获得沉积物的频率响应特性以及特性描述参数,可为神经网络模型提供大量的输入参数;利用集成神经网络能够综合应用位于不同测量方位的多个传感器的测量数据,通过采用适合的集成策略能够克服水合物空间分布不均匀对饱和度计算准确度的不利影响。     

A systematic framework for on‐line calibration of a head‐mounted projection display for augmented‐reality systems

Abstract— Augmented reality (AR) is a technology in which computer‐generated virtual images are dynamically superimposed upon a real‐world scene to enhance a user's perceptions of the physical environment. A successful AR system requires that the overlaid digital information be aligned with the user's real‐world senses — a process known as registration. An accurate registration process requires the knowledge of both the intrinsic and extrinsic parameters of the viewing device and these parameters form the viewing and projection transformations for creating the simulations of virtual images. In our previous work, an easy off‐line calibration method in which an image‐based automatic matching method was used to establish the world‐to‐image correspondences was presented, and it is able to achieve subpixel accuracy. However, this off‐line method yields accurate registration only when a user's eye placements relative to the display device coincides with locations established during the offline calibration process. A likely deviation of eye placements, for instance, due to helmet slippage or user‐dependent factors such as interpupillary distance, will lead to misregistration. In this paper, a systematic on‐line calibration framework to refine the off‐line calibration results and to account for user‐dependent factors is presented. Specifically, based on an equivalent viewing projection model, a six‐parameter on‐line calibration method to refine the user‐dependent parameters in the viewing transformations is presented. Calibration procedures and results as well as evaluation experiments are described in detail. The evaluation experiments demonstrate the improvement of the registration accuracy.     

Multifingers capacitances modeling of 65‐Nm CMOS transistor by unit cell method

The multifingers' parasitic capacitances modeling of 65‐nm CMOS transistors for millimeter‐wave application is presented. The modeling is based on simulation approach, which is done by building the devices true dimension in high‐frequency structure simulator environment. The material properties of the devices as given by the foundry are used during simulation and then full electromagnetic simulations are carried out to extract the Y‐parameters of the model. Unit‐cell parameters extraction method is carried out in order to save memory and simulation time. In this case, the multifinger transistors are divided into unit‐cells and then the parasitic capacitances of the unit‐cells are calculated from the extracted Y‐parameter. Based on linear scaling, the parasitic capacitance of the multifingers transistor can be obtained with good accuracy (less than 5% error). © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE , 2012.     

An analytic method of microwave bipolar single‐frequency and voltage‐controlled oscillator design

An analytic method of microwave bipolar oscillator design, allowing one to define explicit expressions for optimum values of feedback elements and load through bipolar transistor Z‐parameters, is developed. A negative resistance concept is utilized to design series feedback microwave bipolar oscillator with optimized feedback elements and maximum output power in terms of the transistor impedance parameters. The design of the wideband common‐base bipolar voltage controlled oscillators (VCOs) is also presented. Numerical and experimental results verify the validity of the design methods described. ©1999 John Wiley & Sons, Inc. Int J RF and Microwave CAE 9: 403–414, 1999.