一种实现雷达料位仪LFMCW新方法的研究

直接数字频率合成技术（DDS）是近年来迅速发展起来的新的频率合成技术,在很多领域都得到了广泛应用。根据DDS原理及应用现状,利用Altera公司的FPGA来实现雷达料位仪的线性调频信号,重点介绍了DDS的基本原理和雷达料位仪的线性调频信号设计方案,并给出了雷达料位仪的线性调频信号的设计仿真和实验结果,结果表明该设计是行之有效的,在雷达料位仪和其他雷达系统中具有一定的实用价值。     

基于“低慢小”目标雷达信号源设计

“低慢小”目标雷达信号源的稳定直接决定了雷达系统性能的优劣,线性调频（LFM）信号是目前比较常用的雷达信号源。对于雷达信号源的实现方法有很多,但是考虑到信号稳定性、灵活性以及信号衰减程度等多方面因素,采用DDS直接频率合成更加适合。采用FPGA+AD9910的结构进行雷达信号源设计,AD9910作为频率合成器件,FPGA驱动AD9910芯片实现数字斜坡（DRG）模式完成线性调频信号的生成。最终系统测试产生了一个中频信号,完成频率、幅度、占空比都可以调节的一个线性调频信号源,稳定可靠,符合“低慢小”目标雷达信号源的要求。     

微波光子四倍频复合雷达信号生成及目标多维度探测

在雷达系统中,为了实现对目标的高精度、多维度测量,产生雷达信号是一个基本而又重要的环节.本文提出了一种微波光子四倍频复合雷达信号产生方法,该复合雷达信号包括单啁啾线性调频信号和单音微波信号.利用单音微波信号和单啁啾线性调频信号实现目标径向速度的测量,使用单啁啾线性调频信号实现目标距离测量和高分辨率微波成像.在发射端,使...     

LFMCW雷达中频接收机的设计与实现

针对一种线性调频连续波(LFMCW)雷达系统结构,提出一种中频接收机硬件平台的设计方案。该方案采用AD8347正交解调器做I/Q下变频,AD9248模数转换器做采样,EP3C80 FPGA做数字信号处理,PCI9054做PCI接口,并给出了系统软件的设计方法。实现了对线性调频连续波雷达中频信号的接收、处理和存储。通过测试,该接收机能够准确测量出目标信号的频率信息,可为雷达成像提供原始数据。     

基于AD9910雷达信号发生器设计

介绍了AD9910的功能特点,论述了利用FPGA控制DDS模拟线性调频雷达信号的设计方案,并对该方案的仿真结果进行了分析。实验结果表明,基于该方案产生的雷达信号频谱纯净稳定,可以满足雷达系统的要求。     

线性调频与相位编码混合雷达信号处理仿真

为了保证雷达系统能够在复杂的电磁环境中有效地工作,雷达信号的选择尤为重要。本文采用线性调频信号与相位编码信号相结合的码内线性调频信号作为雷达信号,针对这个信号进行了整个雷达信号处理的仿真。仿真结果表明,码内线性调频信号具有较好的抗干扰的特性。     

Chirped AM激光雷达中线性调频信号的产生

线性调频强度调制(Chirped AM)激光雷达将微波雷达中调频测距原理巧妙地应用于激光雷达,用一个线性调频的射频副载波调制激光输出强度.介绍了FM测距的基本数学原理,及激光雷达系统的基本构成和工作原理.在分析对比本体制激光雷达中一项关键技术一一线性调频信号产生几种实现方法的基础上,依据直接数字频率合成和正交调制技术,提出了一种宽带线性调频信号产生方案.介绍了信号发生系统的基本结构以及工作原理,探讨了系统实现的关键技术、技术难点及改进办法.     

噪声调频干扰技术研究及FPGA实现

针对线性调频信号,分析了噪声调频信号的波形、频谱及其对脉冲压缩雷达的干扰效果。在此基础上,介绍了噪声调频信号的FPGA实现方法,并对产生的噪声调频信号进行了时频分析,直观地展现了噪声调频信号的时频特性,为相关雷达干扰机硬件实现提供了参考。     

雷达频域脉压处理中特殊旁瓣的抑制

现代雷达系统的线性调频、非线性调频和相位编码信号是应用最为广泛的几种脉冲压缩信号,当回波信号出现在某特定时刻时,采用传统频域方法来进行脉冲压缩处理会使脉冲压缩输出有一个较大的特殊旁瓣,此旁瓣将影响雷达信号检测。文中主要以线性调频信号为例分析了产生这种特殊旁瓣的原因,提出了两种抑制方法,并已应用于实际雷达系统中。     

一种基于FPGA技术的雷达线性调频信号的实现方法

线性调频信号作为一种常用的脉冲压缩信号,在雷达系统中有着广泛的应用。介绍了基于FPGA(现场可编程门阵列)的DDS(直接数字频率合成)软件编程技术实现线性调频信号的基本原理和具体方法,采用VHDL语言编程,给出了部分主要源程序,并与DDS专用芯片的方法进行了比较。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.