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CMOS SnO2气体传感器模型与热仿真 总被引:1,自引:0,他引:1
为了分析CMOS SnO2气体传感器的工作,有必要建立合适的模型,采用晶粒边界的肖特基势垒模型和固体表面对气体的Freundlich等温吸附很好地解释了SnO2的电导与检测气体体积分数工作温度之间的关系,利用ANSYS7.0对实际设计的传感器进行了热仿真,这便于在CMOS后加工工艺中很好地对其控制。 相似文献
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电子鼻—智能气体传感器 总被引:6,自引:0,他引:6
论述了应用模式识别技术和气体传感器阵列所研制的模拟嗅觉系统。气体传感器阵列由8个金属氧化物气敏器件组成,它们对不同的气味和气体有不同的响应;传感器阵列输出的信号经过微机处理和识别。作者对实验过程进行了详细的讨论,实验结果表明该系统可成功地识别多种不同的气体。 相似文献
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MISiC氢敏传感器物理模型及特性模拟 总被引:2,自引:1,他引:2
分析了金属-绝缘体-SiC(MISiC)肖特基势垒二极管(SBD)气体传感器的响应机理,将SBD热电子发射理论和氢吸附-解吸理论相结合,通过考虑势垒高度调制效应以及理想因子随外界条件的变化,建立了MISiC SBD气体传感器物理模型,模拟结果与实验十分吻合.采用此模型,分析了器件特性与绝缘层厚度的关系,并在灵敏度、可靠性和工作电流/电流分辨率诸因素之间其进行了优化设计,对于300 ℃左右的高温应用,确定出最佳绝缘层厚度为2~2.3 nm. 相似文献
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对于气体传感器获得的样本数据,常规的处理方法是基于样本的表象来提取特征进行分类,具有固有的局限性.基于热电子发射理论和等温吸附理论,对气体传感器的电压响应值与温度、样本浓度等参数建立数学方程,将方程简化,构造了简易的响应动力学模型.通过主成分分析,降低样本维数.将模型向降维后的样本数据拟合,可得到模型的一组系数,作为样本的特征值.将特征值集合运用模式识别方法进行训练,测试分类性能.实验结果显示:分类预测的准确率较高. 相似文献
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The growing need for reliable, efficient, high temperature hydrogen and hydrocarbon monitoring has fueled research into novel structures for gas sensing. Metal oxide semiconductor (MOS) devices employing a catalytic metal layer have emerged as one of the leading sensing platforms for such applications, owing to their high sensitivity and inherent capability for signal amplification. The limited operating temperature of such devices employing silicon as the semiconductor has led research efforts to focus on replacing them with devices based on silicon carbide (SiC). More recently, MOS devices having different oxide layers exhibiting improved sensing performance have emerged. Considering the amount of research that has been carried out in this area in recent times, it is important to elucidate the new findings and the gas interaction mechanisms that have been ascribed to such devices, and bring together several theories proposed by different research groups. In this paper we first highlight the needs which have driven research into SiC based field effect hydrogen and hydrocarbon sensors, illustrate the various structures being investigated, and describe the device evolution and current status. We provide several sensing examples of devices that make use of different oxide layers and demonstrate how their electrical properties change in the presence of the gases, as well as presenting the hydrogen gas interaction mechanisms of these sensors. 相似文献
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J. YuAuthor Vitae G. ChenAuthor VitaeC.X. LiAuthor Vitae M. ShafieiAuthor VitaeJ.Z. OuAuthor Vitae J. du PlessisAuthor VitaeK. Kalantar-zadehAuthor Vitae P.T. LaiAuthor VitaeW. WlodarskiAuthor Vitae 《Sensors and actuators. A, Physical》2011,172(1):9-14
We developed Pt/tantalum oxide (Ta2O5) Schottky diodes for hydrogen sensing applications. Thin layer (4 nm) of Ta2O5 was deposited on silicon (Si) and silicon carbide (SiC) substrates using the radio frequency sputtering technique. We compared the performance of these sensors at different temperatures of 100 °C and 150 °C. At these operating temperatures, the sensor based on SiC exhibited a larger sensitivity, whilst the sensor based on Si exhibited a faster response toward hydrogen gas. We discussed herein, the experimental results obtained for these Pt/Ta2O5 based Schottky diodes exhibited that they are promising candidates for hydrogen sensing applications. 相似文献
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酞箐气体传感器发展趋势 总被引:1,自引:0,他引:1
酞箐作为一种重要的气体敏感材料,有着良好的应用前景。根据实用的要求,采用了各种方法来改善传感器的气体敏感特性。介绍了酞箐气体传感器发展的趋势,包括加速响应、便于检测和应用、消除基线漂移的影响、提高选择性及微型化和多传感器集成化等方面。 相似文献
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基于反馈振荡器的工作原理,采用对振荡电路的开环增益和相位进行检测和调节的方法,设计制作了用于声表面波(SAW)气体传感器的振荡电路。根据开环测量的结果,通过改变匹配电感值来使得0°相位在增益峰值附近,以获得稳定的振荡和提高振荡器可承受的最大传感器插损。在印制电路板(PCB)版图设计中,采用50Ω特性阻抗和保证最短RF回流电流路径等措施以实现稳定的振荡。基于上述方法,分别制作了频率为315,433.92 MHz的振荡电路。后者的噪声幅度在20 Hz以内,标准方差约为3.92。该实验结果表明:此设计方法具有快速、便捷、可靠的优点,设计的振荡电路具有较高的稳定性,可广泛用于SAW传感器设计。 相似文献