PZT压电薄膜在微传感器中的应用

锆钛酸铅压电材料(PZT)因具有优良的压电性能、热释电性能、铁电性能和介电性能而被广泛地应用在微电子机械系统(MEMS)中。基于微传感器,介绍了PZT薄膜,重点介绍了PZT薄膜在微传感器中的应用,并介绍了PZT薄膜微传感器的发展状况。     

压电微悬臂梁气体传感器静态弯曲模型的研究

压电微悬臂梁是一种灵敏度高、尺寸小的生化传感器.分子或原子在压电微悬臂梁功能化表面的吸附会引起悬臂梁的静态弯曲,通过静态变形可以得到微悬臂梁的表面应力.将表面应力引起的微悬臂梁中性层位置的变化引入建模过程,并与能量法相结合,建立了压电微悬臂梁在单分子层吸附稳定后的静态弯曲理论模型.结果发现在相同吸附表面积和吸附量条件下...     

梯形变截面悬臂梁式微质量传感器设计与分析

针对微小集中质量测量问题,提出并制备了一种梯形变截面悬臂梁式微质量传感器,建立了梯形变截面悬臂梁式微质量传感器的振动分析模型。采用有限元方法求解其振动控制方程,获得了微质量传感器的灵敏度。仿真分析结果表明,相对于等截面矩形悬臂梁式微质量传感器,单层压电和双层压电结构的变截面悬臂梁传感器的灵敏度分别提高了127.00%和263.00%。采用线切割工艺,加工制备了单压电层梯形变截面结构的微质量传感器并对传感器进行了实验测试,在误差允许范围内,仿真结果与实验结果基本一致,验证了采用梯形变截面悬臂梁式结构可以有效的提高传感器的灵敏度。     

硅基压电多层膜悬臂梁的偏转模型和优化设计

利用压电多层膜悬臂梁的形变曲率半径,导出了简洁的压电悬臂梁型微执行器的偏转模型.采用此模型,对硅基PZT压电悬臂梁型微执行器进行了模拟和分析.分析获得了各层薄膜结构参数与微执行器偏转位移的关系.根据此分析结果,进一步优化了压电悬臂梁型微执行器的设计,并给出了优化的方法.     

一种基于高压静电纺丝工艺制备的P(VDF-TrFE)/PZT压电传感器及其在睡眠监测中的应用

针对日常睡眠监测的需求,提出一种基于高压静电纺丝工艺制备的P(VDF-TrFE)/锆钛酸铅(PZT)压电传感器并对其性能进行了研究。首先,介绍了P(VDF-TrFE)/PZT压电传感器的制作及封装流程。其次对其灵敏度,频率响应特性,瞬时响应和稳定性等进行了测试。结果表明,该传感器不仅具有良好的微观外貌形态,且相比于纯P(VDF-TrFE)压电传感器0.73 V/N的灵敏度,制备的含30%PZT的P(VDF-TrFE)/PZT压电传感器灵敏度是纯P(VDF-TrFE)压电传感器的2.5倍,达到了1.78 V/N。此外在低频下能够保持稳定压电输出且具备2 ms较快的响应时间。最后采用自制的P(VDF-TrFE)/PZT压电传感器测量人体心冲击信号,并通过支持向量机(SVM)训练睡眠分期模型实现了对睡眠质量的监测,四分类模型平均准确率达到72.5%,为可穿戴睡眠监测传感器的选择提供了参考。     

溶胶-电雾化法在光纤表面制备PZT薄膜

首次提出了使用溶胶-电雾化法在光纤表面制备PZT压电陶瓷薄膜,分析了光纤表面PZT压电陶瓷薄膜的成膜机理与特点,系统的研究了溶胶-电雾化法制备PZT压电陶瓷薄膜的特点,并分析了前驱液浓度、电雾化条件、PZT压电陶瓷薄膜沉积过程温度等因素对于PZT压电陶瓷薄膜的表面质量的影响.针对整个工艺过程进行了优化,最终得到了表面质量较好的PZT压电陶瓷薄膜.     

GaAs基PHEMT加速度传感器的研究

PHEMT结构一种高电子迁移率晶体管,以其高频和低噪声等方面的优越性,成为当今微电子领域中最活跃的研究主题之一。将其良好的力敏特性应用在加速度计方面更是成为前沿的研究方向。基于GaAs基PHEMT结构压阻效应,设计加工出一种悬臂梁式微加速度传感器,通过力作用在加速度计上,改变PHEMT结构漏极电流的输出,并通过外围测试电路来检测该电流变化,从而实现力电转换。文中,对其基本原理和结构设计进行阐述,并进行力学特性的研究。结果表明,在动态测试下,PHEMT结构的漏极输出电流与栅压、漏压之间的关系与静态测试I-V特性曲线保持一致。该加速度计具有良好的线性特性,经过测试在饱和区灵敏度为0.177 mV/gn。     

ZnO压电薄膜声传感器的有限元分析

阐述了ZnO压电薄膜声传感器的结构和工作原理,并用ANSYS 9.0对压电薄膜声传感器进行了静态分析、模态分析和谐响应分析。通过静态分析,得到压电薄膜声传感器的灵敏度为16.4 mV/Pa;模态分析得出了传感器的第一阶固有频率为12.379 kHz;谐响应分析则获得感应电压与动态外力频率之间的关系。这些分析为此类声传感器的设计提供了理论依据。     

一种用于高密度信息存储中数据读取的新方法的 理论和实验研究

通过测量压电悬臂梁的等效电容来检测悬臂梁的振动信息,以应用于基于扫描探针技术的高密度信息存储中进行数据读取.在压电悬臂梁的PZT压电层上施加交流电场使其工作在共振状态,并使其自由端与存储介质进行周期性的接触.当悬臂梁的自由端扫描到数据点时,其自由端的振幅和所受到的外力将发生变化,进而引起PZT压电层的介电常数发生变化.因此,通过检测悬臂梁上压电层的等效电容变化,便可以得到悬臂梁的振幅改变量,从而实现了对存储介质上数据的读取.实验结果表明,该可以实现1nm的位移检测分辨率.     

直流偏置对PZT微传感器的谐振频率的影响

在直流偏置电压对PZT压电微悬臂梁谐振频率的影响研究中,建立了理论方程,并通过激光干涉测试实验对所建方程进行了验证。理论方程和实验均表明:直流偏置电压对PZT微悬臂梁的谐振基频的影响是二阶函数。在直流偏置电场小于1×107 V/m时,直流偏置电压和谐振基频存在线性变化区。此结论可以用于改善谐振式PZT微悬臂梁传感器的信号检测系统,即利用扫描直流偏置电压取代频谱分析。     

溅射PZT薄膜微驱动器的工艺研究

采用磁控溅射法制备的具有PZT结构驱动薄膜,结合微机械电子(MEMS)工艺制作以PZT薄膜为驱动的无阀型微驱动器。探讨了PZT薄膜微驱动器的制备工艺方法,解决了制备工艺中存在的关键问题。     

Finite element analysis and experiments on a silicon membrane actuated by an epitaxial PZT thin film for localized-mass sensing applications

In this paper, we investigate the performance of a piezoelectric membrane actuated by an epitaxial piezoelectric Pb(Zr_0.2Ti_0.8)O₃ (PZT) thin film for localized-mass sensing applications. The fabrication and characterization of piezoelectric circular membranes based on epitaxial thin films prepared on a silicon wafer are presented. The dynamic behavior and mass sensing performance of the proposed structure are experimentally investigated and compared to numerical analyses. A 1500 μm diameter silicon membrane actuated by a 150 nm thick epitaxial PZT film exhibits a strong harmonic oscillation response with a high quality factor of 110-144 depending on the resonant mode at atmospheric pressure. Different aspects related to the effect of the mass position and of the resonant mode on the mass sensitivity as well as the minimum detectable mass are evaluated. The operation of the epitaxial PZT membrane as a mass sensor is determined by loading polystyrene microspheres. The mass sensitivity is a function of the mass position, which is the highest at the antinodal points. The epitaxial PZT membrane exhibits a mass sensitivity in the order of 10⁻¹² g/Hz with a minimum detectable mass of 5 ng. The results reveal that the mass sensor realized with the epitaxial PZT thin film, which is capable of generating a high actuating force, is a promising candidate for the development of high performance mass sensors. Such devices can be applied for various biological and chemical sensing applications.     

无线数据采集在环境监控系统中应用

随着嵌入式技术、网络技术和监控技术的发展,基于嵌入式技术的远程环境监控系统在安防领域将得到越来越广泛的应用。该文介绍了基于嵌入式技术的远程环境监控系统前端无线数据采集系统中PT2262/PT2272工作原理。     

基于NAT/PT技术的小型路由器的设计探讨

面对日益紧缺的IP地址需求，NAT／PT不愧为解决这个问题的好办法。特别是对于小公司，家庭办公室（SOHO）用户来说意义更加重大。本文以NAT／PT原理以及在路由器上的实现为线索进行阐述，探讨一个基于NAT／PT技术的小型路由器的设计方法。     

Electric and ferroelectric properties of PZT/SBT multilayer films prepared by photochemical metal-organic deposition

The electric and ferroelectric properties of lead zirconate titanate and strontium bismuth tantalate multilayer films prepared using photosensitive starting precursors were characterized. The electric and ferroelectric properties were investigated by characterization of the effect of stacking order of four ferroelectric layers of PZT or SBT in the multilayer films of 4-PZT, PZT/2-SBT/PZT, SBT/2-PZT/SBT, and 4-SBT. The P_r value of the 4-SBT multilayer film was relatively small (6 μC/cm²) and a two times higher value (12 μC/cm²) was obtained with the SBT/2-PZT/SBT multilayer film. The films with SBT layers at the top and bottom showed improved leakage current and fatigue resistance compared to the films with PZT layers at the top and bottom. It was revealed that the defect dipole was reduced at the SBT/Pt interface due to a self-regulation layer such as (Bi₂O₂)²⁺ in the SBT film. Also, the bottom layer on the Pt substrate showed a significant influence on the growth orientation of the entire ferroelectric films.     

Wafer mapping of the transverse piezoelectric coefficient, e31,f, using the wafer flexure technique with sputter deposited Pt strain gauges

Measurement of the transverse piezoelectric coefficient (e_31,f) in thin films is crucial for the development of microfabricated sensors, actuators, and transducers. Here, a method is described such that lithographically defined strain gauges enable non-destructive, position-dependent characterization of e_31,f in conjunction with the wafer flexure technique. Measurements of 100 nm thick Pt gauges deposited on 1 μm thick PbZr_0.52Ti_0.48O₃ thin films yield gauge factors of 6.24, with a gauge-to-gauge variation that is 5% of this value. The system allows for simultaneous measurement of the charge and strain, improving the overall accuracy of measurement. The small footprint of the combined strain gauge array/electrode pattern used for determining e_31,f, allows for a non-destructive mapping of the transverse piezoelectric coefficient across large-area wafers. Due to the clamping configuration used in wafer flexure experiments, e_31,f values can accurately be obtained within the central ∼2/3 of a full wafer. Measurements performed on a 1.3 μm thick randomly oriented polycrystalline PbZr_0.52Ti_0.48O₃ film made deposited on a 4 in. platinized silicon wafer by the sol-gel process show a high degree of uniformity, with e_31,f of −6.37 ± 0.60 C/m² for points measured within r = 3 cm.     

Integration of displacement sensor into bulk PZT thick film actuator for MEMS deformable mirror

Bulk PZT thick film actuator integrated with displacement sensor, the so-called self-sensing actuator, is presented in this paper. The PZT film is used as not only an actuating layer but also a displacement sensor, which is achieved by dividing the electrode on the top surface of the PZT film into two parts: central top electrode for actuating and outer annular sensor electrode for piezoelectric displacement detection. When the actuator moves, the piezoelectric charge is induced in the outer annular PZT due to the piezoelectric effect. The total amount of accumulated charge is proportional to the stress acting on the PZT, which is in turn proportional to the actuator displacement. By collecting the piezoelectric charge, the actuator displacement can be detected. A theoretical model is proposed to determine the structure parameters of the sensor and predict the sensor sensitivity. Experiments were performed on the micro-fabricated sensor integrated PZT thick film actuator, and the measured piezoelectric charge is close to the theoretical predictions. The integrated piezoelectric sensor has a displacement sensitivity of approximately 4 pC/nm. In addition, the integration of displacement sensor into the actuator needs no additional fabrication process and has no influence on the actuator performances.     

用于油库安全监测的气体传感器研究与设计

研究并设计了一种用于油库安全监测的气体传感器.传感器中气体敏感元件是利用直流磁控溅射法制备的Al掺杂ZnO薄膜.此薄膜对汽油等有机蒸汽有较高的敏感性和较短的响应(恢复)时间.当油气浓度较大时(大于1%),输出信号的变化仍较大.本传感器采用MAX197芯片,可以同时采集多个气敏元件的模拟信号并进行12位高精度A/D转换,利用无线收发模块F05C、J04E进行数据的无线传输.传感器拥有ACM12864液晶显示模块,方便数据显示.