适于长距离,离速率光纤通信系统的Ti：LiNbO3M—Z型强度调制器

本文报道了１．５μｍ波长高速Ｔｉ：ＬｉＮｂＯ３Ｍ－Ｚ型强度调制器的设计，制作，封装和检测，所得包装式器件原性能指标为；插入损耗６．７ｄＢ，开关电压７．３Ｖ，３ｄＢ调制带宽８ＧＨｚ，消光比－２１ｄＢ。     

微波波段带通光调制器的优化设计

本文对具有极性反转电极结构的行波皮导电光调制器的调制特性进行了理论分析，对共平面波导电极和非对称微带电极用于极性反转电极结构下的有关特征参量进行了数值计算，对使用这两种电极制成的调制器，我们用带宽－长度积、电压－长度积和带宽－电压比这三个品质因子对其性质进行了比较，本文还给出了调制器的设计实例，对结果的分析讨论表明，非对称微带电极用于极性反转电极结构对在高频波段实现低动功率光调制是十分有效的。     

锁相环MSK调制器的性能研究

本文研究一种锁相环MSK调制器的性能。文中详细分析了AFC环路非线性产生相位拖尾的机理及对系统性能的影响。计算机模拟结果表明,这种相位拖尾引入的系统信噪比恶化量,在用相干解调时最大,鉴频解调时居中,而差分解调时最小。最后给出了一个工作于1.5 GHz频段的锁相环MSK调制器的硬件设计及实现。     

RF calibration of on-chip DfT chain by DC stimuli and statistical multivariate regression technique

The problem of parameter variability in RF and analog circuits is escalating with CMOS scaling. Consequently every RF chip produced in nano-meter CMOS technologies needs to be tested. On-chip Design for Testability (DfT) features, which are meant to reduce test time and cost also suffer from parameter variability. Therefore, RF calibration of all on-chip test structures is mandatory. In this paper, Artificial Neural Networks (ANN) are employed as a multivariate regression technique to architect a RF calibration scheme for DfT chain using DC- instead of RF (GHz) stimuli. The use of DC stimuli relaxes the package design and on-chip routing that results in test cost reduction. A DfT circuit (RF detector, Test-ADC, Test-DAC and multiplexers) designed in 65 nm CMOS is used to demonstrate the proposed calibration scheme. The simulation results show that the cumulative variation in a DfT circuit due to process and mismatch can be estimated and successfully calibrated, i.e. 25% error due to process variation in DfT circuit can be reduced to 2.5% provided the input test stimuli is large in magnitude. This reduction in error makes parametric tests feasible to classify the bad and good dies especially before expensive RF packaging.     

基于SoC测试系统的RF圆晶片测试技术

以手机为代表的无线通信应用技术已向SiP化发展，因此对构成SiP芯片的各个单元（chip）进行圆晶片级别的测试就必不可少。爱德万测试（ADVANTEST）开发了基于SoC测试系统的RF圆晶片测试解决方案，提供了一系列新技术来解决串扰、电源阻抗和等长布线等课题，从而实现低成本的圆晶片测试。本文将就RF圆晶片级别测试技术及SoC测试系统来介绍该RF圆晶片测试方案。     

将射频放大器噪声系数减至最小的基本技术与方法

低噪声微波晶体管通常要求具有最小的噪声系数及相应的增益(一般O.5～1.5分贝,小于晶体管的最大有效增益).这可通过调节放大器,牺牲一点噪声系数来获得最佳的性能.     

Ne原子射频放电光电流效应及其高激发态能级的测量

1.本文采用射频耦合放电方法,研究了 Ne原子光电流信号的极性     

声表面波谐振器传播状态的ANSYS仿真

为描述声表面波的传播状态,利用ANSYS软件对声表面波(SAW)谐振器进行了仿真。在对声表面波产生机理和SAW谐振器工作原理分析的基础上,建立了SAW谐振器仿真模型,讨论了网格划分不同对仿真结果精度的影响,得出了在每个SAW波长尺寸内划分30～40个网格可以得到较精确的仿真结果。对不同长度声孔径的声表面波谐振器进行了仿真分析,得出了声表面波只在固体表面1～2个波长深度范围内传播的仿真效果图,与理论分析有很好的一致性。最后对IDT/ZnO/金刚石/Si结构的声表面波器件进行了仿真,得出该结构声表面波器件SAW传播速度与ZnO的厚度成反比,其大小是IDT/ZnO结构器件SAW传播速度的2～3倍。     

一种X波段RF MEMS开关的设计与制作研究

设计并制作了一种X波段的电容式RF MEMS开关。该开关在共面波导上的悬空金属膜桥的支撑梁呈螺旋结构,其等效电感值高达134pH．有效降低了“关”态的谐振频率。结合开关的等效电路模型．使用Agilent ADS软件以及理论公式计算对该开关进行了设计和优化。与传统桥膜电容式开关相比,所介绍的开关”关”态隔离性能得到了很大提高。利用表面微机械工艺,在高阻硅衬底上制备了开关样品。X波段MEMS开关的在片测试结果表明：驱动电压为9V,“开”态的插入损耗约0．69dB@11．6GHz;“关”态的隔离度约27．7dB@11．6GHz。     

Predictive test strategy for CMOS RF mixers

In this paper, we present two built-in self-test strategies for the down-converter stage in a GSM receiver. These strategies are based on the prediction of its performance parameters from measurements in test mode. By reusing some receiver blocks as part of the test set-up, the circuitry overhead is kept small. The first strategy uses the local oscillator (LO) signal as the only test stimuli. The second strategy uses additional test circuitry, a generator, and an auxiliary mixer. Prediction accuracies are similar in both strategies, but the test observables in the second one are easier to be obtained.     

一种新型情报科目 --浅谈国外射频测量与特征信号情报

测量与特征信号情报（Measurement And Signature Intelligence，MASINT）现已成为美国最重要的国家及国防信息资源，并将成为2010年美国“未来部队”获得战场控制权，对“全频谱”威胁作出反应的关键措施。其中，射频测量与特征信号情报（RFMASINT）的侦收和利用是MASINT的一项重要内容。一种精细的战术RF接收机将和其他MASINT传感器一起工作，但这种战术EW接收机主要侦收“雷达泄漏出的其他蜘丝马迹”。MASINT将使无源系统也暴露无遗。     

利用RF ID技术实现电信智能配线管理

本文首先介绍了电信网中配线调度的现状和存在的问题,然后分析了RF ID的技术特点及在电信网络配线中的应用,最后简要介绍了上海某公司利用RF ID技术开发出的电信配线管理系统及其应用情况。     

A current based self-test methodology for RF front-end circuits

This paper presents a critical step in the realization of a robust, low overhead, current-based Built-In Self-Test (BIST) scheme for RF front-end circuits. The proposed approach involves sampling the high frequency supply current drawn by the circuit under test (CUT) and using it to extract information about various performance metrics of the RF CUT. The technique has inherently high fault coverage and can handle soft faults, hard faults as well as concurrent faults because it shifts the emphasis from detecting individual faults, to quantifying all the significant performance specifications of the CUT. This work also presents the realization of an HF current monitor which is a critical component in the proposed architecture. The current monitor has then been interfaced with three standard RF front-end circuits; a Low noise amplifier, a Single Balanced Mixer and a Voltage controlled oscillator, while minimally impacting their performance. The extracted information has then been used to create a mapping between variations in CUT performance and the sensed current spectrum. The monitor circuit has been fabricated in the IBM 6 metal, RF CMOS process, with a gain of 24 db and bandwidth of 3.9 GHz.