正电子湮没对研究热平衡点缺陷的应用

根据有关理论,在热平衡下单、双空位浓度C_(1v)、C_(2v)之间的关系为C_(2v)=1/2+Zexp(ΔS_(2v)K)exp(H_v~B/KT)(C_(1v))~2ΔS_(2v)是双空位间的组合熵。若不考虑三空位和更多空位的成团,则晶体内总空位浓度为C_v′=C_(1v)+2C_(2v)。假定晶体内还存在点缺陷(如某种间隙),由推导可得     

Fe-Ni合金马氏体相变缺陷的正电子湮没研究

我们对含Ni量28～37wt.％的十一种合金的马氏体相变进行了研究。 加工态合金(变形量>60％)经液氮淬火后,正电子平均寿命τ和S参数值不变。因为冷加工产生的缺陷对正电子的捕获已达到饱和。     

腐蚀疲劳断裂前氢与缺陷相互作用的正电子湮没研究

用正电子湮没谱和加热释氢研究了低合金高强钢人工海水腐蚀疲劳断裂前经若干小时疲劳的样品。实验结果表明,腐蚀疲劳早期阶段产生的位错、空位团以及钢中晶界是氢的捕获位,其捕获氢量随疲劳时间增加。氢与空位相互作用使空位团尺寸增加,数目增多,氢与位错相互作用促使位错增殖且随疲劳时间增加。晶界与氢相互作用能随疲劳时间、晶界捕获氢量增加而降低。碳化物沿晶析出促进了晶界捕获氢。较低的晶界-氢结合能有利于氢沿晶运动,促使预裂缝沿晶发展。     

金属与合金的高温正电子湮没特性测量

回顾了正电子湮没热平衡测量的主要研究工作，讨论了β＾＋－γ正电子寿命谱测量装置的原理和应用，并介绍了β＾＋－γ寿命谱仪的发展过程及今后的发展趋势。     

用正电子湮没研究金属钴的磁感生各向异性

金属钴在磁场中,随着磁场回火温度的升高,单轴磁感生各向异性常数(Ku)增加,Ku的增加是否由于金属钴内部产生空位所引起?本工作对磁场中或元磁场时不同回火温度的金属钴样品进行了正电子湮没S参数和寿命测量,试图了解感生各向异性的金属钴样品的内部结构有关问题。实验结果示于表和图1、2。实验的磁场强度为5554Oe。因为处理工艺条件的差异,使得图1和2中“·”和“。”曲线不重叠。从结果看到:在不同磁场回火温度中,随着磁场回火温度的升高,磁感生各向异性常数Ku变大(见表),而湮没平均寿命τ_1和Doppler线     

金属氢化物的正电子湮没研究

采用正电子湮没方法在７７－３００Ｋ温区和ｘ为０－０．８６氢浓度范围研究了Ｐｄ０．７５Ａｇ０．２５Ｈｘ和ＮｂＨｘ两种金属氢化物，叙述了获得的实验结果。     

电镀纳米镍缺陷的正电子研究

用正电子寿命谱研究了电镀纳米镍（～２０ｎｍ）中的微观缺陷，分析了缺陷中氢对正电子寿命的影响，实验结果表明，界面存在单空位大小的自由体积，６－１０个空位大小的自由体积和微孔洞三类缺陷，纳米镍在５００℃真空退火２ｈ后，中间寿命和最长寿命的强度不受影响，表明中间寿命和最长寿命所对应的缺陷具有很好的热稳定性。     

腐蚀疲劳断裂过程中氢与缺陷相互作用的正电子湮没研究

用正电子湮没谱研究了40CrNiMo低合金高强钢海水腐蚀疲劳断裂后,低温释氢过程中正电子湮没H参数和寿命参数随温度的变化。实验表明H-T和寿命参数-T曲线有三个极点,分别对应于氢从晶界、位错和微空洞处释出。第一阶段断裂区晶界释氢和位错释氢多于第二阶段区。而微空洞释氢则第二阶段多于第一阶段。晶界与氢相互作用能较有利于氢沿晶界运动,促使氢致开裂沿晶发展。位错与氢相互作用使位错增殖并有利于氢的输运。氢与微洞作用促使微空洞尺寸和数目在几小时内达到并超过空气疲劳200多小时的水平,并促进腐蚀疲劳第二阶段快速断裂。估计了氢与晶界、位错和微空洞的结合能,并结合电镜结果进行了讨论。     

纯铁中的氢致微观缺陷和氢-缺陷系统的正电子寿命

几十年来,人们对金属的氢致损伤问题的研究主要集中于金属的宏观力学性能和半微观性能。本文用正电子湮没技术研究氢对金属中小到原子尺度的微观结构的影响。 选用纯度99.99％的铁样品八对,经840℃、1.5小时真空退火后电解充氢,充氢电流密度分别为0、2、4、8、16、32、64、256(mA/cm~2),放置19小时后在室温下测量各样品的正电子寿命谱,实验结果用Positronfit程序进行三寿命分量的自由拟合,结果发现,所有充氢样品的平均正电子寿命τ_M和第二寿命成份的相对强度I_2都大于未充氢样品,并且随着充氢电流密度的增大而增大,说明铁中的氢可以引起微观缺陷浓度的显著增大。根据第二寿命成份的寿命值I_2(230～270ps),可以推知新增加的缺陷主要是各种空位,位错和微孔洞。     

Positorn annihilation study on point defects in lead tungstate

A study on point defects in leas tungstate(PbWO4) by using positron annihilation lifetime method is presented,The measurement was carried out for the cases of untreated,vacuum-annealed,oxygen-annealed and La-doped PbWO4 crystals,It was found that the components T2,which reflect the positron annihilation in point defects ,are different from each other for each case,Some tentative models for the defects are dicussed.     

高温超导中多个正电子捕获位及其对正电子湮没参数的影响

从正电子陷阱物理图象出发，引入正电子在陷阱中湮没的竞争机制，提出了一个新的陷阱湮没模型，并采用此模型分析了高温超导材料中正电子在陷阱中湮没的特征。     

中子辐照注量对单晶硅中缺陷退火行为的影响

用正电子湮没寿命和多普勒加宽测量研究了不同注量中子辐照的氩气氛区熔单晶硅中缺陷的退火行为，发现不同中子注量辐照时，辐照致空位型缺陷的退火行为十分类似，并均在５５０℃时退火消除；但辐照致双空位浓度、二次双空位和四空位型缺陷的产生、浓度和消除温度很不相同。简单陷阱模型不适用于５００℃以下退火的离中子注量辐照的单晶硅，但能部分适用于中等注量辐照的单晶硅。     

纯铝中氢致缺陷的正电子湮没和透射电镜研究

用正电子湮没技术和透射电镜研究了退火和变形纯铝中的氢致缺陷。光学显微镜和透射电镜观察结果表明充氢可以在退火铝中引入气泡、位错等．纯度较低的样品比较容易形成氢致缺陷．说明铝中杂质是氢致缺陷的成核中心。正电子湮没结果表明．随着充氮量的增加．退火铝的平均正电子寿命无显著变化．变形铝的平均正电子湮没寿命有所缩短：这一结果从实验上证实了充入铝中的氢以质子形式填充于缺陷中。屏蔽了缺陷对正电子的吸引或使缺陷内的正电子寿命下降．从而降低了正电子寿命方法对缺陷的敏感性．     

Helium-implanted CLAM steel and evolutionary behavior of defects investigated by positron-annihilation spectroscopy

China Low Activation Martensitic (CLAM) steel has been chosen as the primary candidate structural material for the first wall/blanket for fusion reactor. The excessive helium irradiation induced damage of CLAM steel at high temperatures and the evolution of defects were investigated in this paper. The samples were homogeneously implanted with 1e + 17 ions/cm² and 100 keV of helium at room temperature, 473, 673, and 873 K. Irradiation induced damage of CLAM steel and the annealing behavior of defects were probed by slow positron beam Doppler broadening technique. Helium implantation produced a large number of vacancy-type defects which bound with helium and formed helium–vacancy complexes. Target atoms’ displacement capacity was strengthened with rising irradiation temperatures, so the S parameter increased with increasing irradiation temperatures, and helium–vacancy complexes were main defects after helium implantation at damage layers. Helium bubbles would be unstable and the desorption of helium bubbles would promote the density of defects above 673 K. By analyzing the curves of S–W and annealing tests of irradiated specimen, it suggested that there werenot only one type of defect in damage layers. Though helium–vacancy complexes were primary defects after helium implanted, introducing excessive helium might also generated other point defects or dislocation loops in the material.     

Investigation on the porosity of zeolite NU-88 by means of positron annihilation lifetime spectroscopy

Seven well characterized zeolites were investigated by positron annihilation lifetime spectroscopy. The lifetime spectra were analysed in four discrete components. The third one was associated with ortho-positronium annihilation in the channels, framed in terms of infinite cylinders. Differences between the radii determined from the positron annihilation technique and X-ray diffraction data were found and explained in terms of the physical structure of the channel. An analogous study on a high-silica NU-88 zeolite gave a value of 0.33 nm for the corresponding radius, in agreement with Ar and N₂ adsorption data as well as with the catalytic behaviour of this zeolite in several acid catalyzed reactions. The longest lifetime component in NU-88 reveals the existence of mesopores, with average radius of about 1.8 nm, which could explain the importance of hydrogen transfer reactions in this zeolite.     

Cr和Mo对Fe3Al合金中微观缺陷和电子密度的影响

测量了二元Ｆｅ３Ａｌ及含Ｃｒ或Ｍｏ的Ｆｅ３Ａｌ合金的正电子寿命谱参数,计算了合金基体和缺陷处的价电子密度。实验结果表明,Ａｌ和Ｆｅ结合形成Ｆｅ３Ａｌ合金时,Ａｌ原子提供价电子与Ｆｅ原子的３ｄ电子形成局域的共价键。Ｆｅ３Ａｌ合金中金属键和共价键共存。Ｆｅ３Ａｌ合金晶界缺陷的开空间大于Ｆｅ空位或Ａｌ空位的开空间,晶界缺陷处价电子密度比基体低,晶界的键合力较弱。在Ｆｅ３Ａｌ合金中加入Ｍｏ,降低了合金中的     

Vacancy defects induced in the track region of 132 MeV C irradiated SiC

Positron annihilation lifetime spectroscopy (PALS) and electron paramagnetic resonance (EPR) have been used in this work to investigate vacancy defects induced in the track region of 132 MeV ¹²C irradiated silicon carbide. Irradiations have been performed at room temperature at a fluence of 2.5 × 10¹⁴ cm⁻² in N-low doped 6H–SiC and 3C–SiC monocrystals. Silicon monovacancies have been detected in both polytypes using EPR. Their charge state and concentration have been determined in the track and cascade region of the C⁺ ions. PALS measurements performed as a function of temperature have shown the presence of V_Si–C divacancies in the track region for both polytypes.