共查询到20条相似文献,搜索用时 31 毫秒
1.
Chen H. R. Hsu M. K. Chiu S. Y. Chen W. T. Chen G. H. Chang Y. C. Lour W. S. 《Electron Device Letters, IEEE》2006,27(12):948-950
Depositing gate metal across a step undercut between the Schottky barrier layer and the insulator-like layer is employed to obtain a reduced gate length of 0.4 mum with an additional 0.6-mum field plate from a 1-mum gate window. Most dc and ac characteristics including current density (IDSS=451mA/mm), transconductance (gm,max=225mS/mm), breakdown voltages (VBD(DS)/V BD(GD)=22/-25.5V), gate-voltage swing (GVS=2.24V), cutoff, and maximum oscillation frequencies (ft/fmax=17.2/32GHz) are improved as compared to those of a 1-mum gate device without field plate. At a VDS of 4.0 V, a maximum power added efficiency of 36% with an output power of 13.9 dBm and a power gain of 8.7 dB are obtained at a frequency of 1.8 GHz. The saturated output power and the linear power gain are 316 mW/mm and 13 dB, respectively 相似文献
2.
Su K.-H. Hsu W.-C. Lee C.-S. Wu T.-Y. Wu Y.-H. Chang L. Hsiao R.-S. Chen J.-F. Chi T.-W. 《Electron Device Letters, IEEE》2007,28(2):96-99
This letter reports, for the first time, a high-electron mobility transistor (HEMT) using a dilute antimony In0.2Ga0.8 AsSb channel, which is grown by a molecular-beam epitaxy system. The interfacial quality within the InGaAsSb/GaAs quantum well of the HEMT device was effectively improved by introducing the surfactantlike Sb atoms during the growth of the InGaAs layer. The improved heterostructural quality and electron transport properties have also been verified by various surface characterization techniques. In comparison, the proposed HEMT with (without) the incorporation of Sb atoms has demonstrated the maximum extrinsic transconductance gm,max of 227 (180) mS/mm, a drain saturation current density IDSS of 218 (170) mA/mm, a gate-voltage swing of 1.215 (1.15) V, a cutoff frequency fT of 25 (20.6) GHz, and the maximum oscillation frequency fmax of 28.3 (25.6) GHz at 300 K with gate dimensions of 1.2times200 mum2 相似文献
3.
Weitzel C.E. Palmour J.W. Carter C.H. Nordquist K.J. 《Electron Device Letters, IEEE》1994,15(10):406-408
MESFET's were fabricated using 4H-SiC substrates and epitaxy. The D.C., S-parameter, and output power characteristics of the 0.7 μm gate length, 332 μm gate width MESFET's were measured. At νds =25 V the current density was about 300 mA/mm and the maximum transconductance was in the range of 38-42 mS/mm. The device had 9.3 dB gain at 5 GHz and fmax=12.9 GHz. At Vds=54 V the power density was 2.8 W/mm with a power added efficiency=12.7% 相似文献
4.
Zaknoune M. Bonte B. Gaquiere C. Cordier Y. Druelle Y. Theron D. Crosnier Y. 《Electron Device Letters, IEEE》1998,19(9):345-347
An In0.3Al0.7As/In0.3Ga0.7 As metamorphic power high electron mobility transistor (HEMT) grown on GaAs has been developed. This structure with 30% indium content presents several advantages over P-HEMT on GaAs and LM-HEMT on InP. A 0.15-μm gate length device with a single δ doping exhibits a state-of-the-art current gain cut-off frequency Ft value of 125 GHz at Vds=1.5 V, an extrinsic transconductance of 650 mS/mm and a current density of 750 mA/mm associated to a high breakdown voltage of -13 V, power measurements performed at 60 GHz demonstrate a maximum output power of 240 mW/mm with 6.4-dB power gain and a power added efficiency (PAE) of 25%. These are the first power results ever reported for any metamorphic HEMT 相似文献
5.
Trapping effects and microwave power performance in AlGaN/GaN HEMTs 总被引:14,自引:0,他引:14
Binari S.C. Ikossi K. Roussos J.A. Kruppa W. Doewon Park Dietrich H.B. Koleske D.D. Wickenden A.E. Henry R.L. 《Electron Devices, IEEE Transactions on》2001,48(3):465-471
The dc small-signal, and microwave power output characteristics of AlGaN/GaN HEMTs are presented. A maximum drain current greater than 1 A/mm and a gate-drain breakdown voltage over 80 V have been attained. For a 0.4 μm gate length, an fT of 30 GHz and an fmax of 70 GHz have been demonstrated. Trapping effects, attributed to surface and buffer layers, and their relationship to microwave power performance are discussed. It is demonstrated that gate lag is related to surface trapping and drain current collapse is associated with the properties of the GaN buffer layer. Through a reduction of these trapping effects, a CW power density of 3.3 W/mm and a pulsed power density of 6.7 W/mm have been achieved at 3.8 GHz 相似文献
6.
Si/SiGe power heterojunction bipolar transistors (HBTs) grown by MBE were dynamically characterised in the common-base configuration. At an emitter current density of 1.1×105 A/cm2, a maximum frequency of oscillation of 49 GHz was observed. At 10 GHz a maximum unilateral gain of 14 dB is available, and a CW output power of 1.3 W/mm for a device with 10 parallel emitter-fingers of 1×10 μm2 each was predicted, from CW measurements 相似文献
7.
《半导体学报》2010,31(2)
This Daper describes the first domestic Ku-band power AlGaN/GaN HEMT fabricated on a sapphire substrate.The device with a gate width of 0.5 mm and a gate length of 0.35 μm has exhibited an extrinsic current gain cutoff frequency of 20 GHz and an extrinsic maximum frequency of oscillation of 75 GHz.Under V_(DS)=30 V, CW operating conditions at 14 GHz,the device exhibits a linear gain of 10.4 dB and a 3-dB-gain-compressed output power of 1.4 W with a Dower added efficiency of 41%.Under pulse operating conditions,the linear gain is 12.8 dB and the 3-dB-compressed output power is 1.7 W The power density reaches 3.4 W/mm. 相似文献
8.
High-current 0.15-mum-gate enhancement-mode high-electron mobility transistors utilizing Ir/Ti/Pt/Au gate metallization were fabricated using a new process including a high-temperature gate anneal that is required for Schottky-barrier height enhancement for the Ir-based gate contact. SiNx encapsulation was employed to prevent thermal degradation of device layer during the high-temperature gate anneal. Excellent enhancement-mode operation, with a threshold voltage of 0.1 V and IDSS of 2.1 mA/mm, was realized. Both the annealed and unannealed devices exhibited high gm,max and ID,max of 800 mS/mm and 430 mA/mm, respectively. A unity current-gain cutoff frequency fT of 151 GHz and a maximum oscillation frequency fMAX of 172 GHz were achieved. From the dc and RF characteristics, it can be deduced that there was no degradation of the gate contact and the heterostructure due to gate annealing. Furthermore, it was found that the gate diffusion during gate annealing was negligible since no increase in gm,max was observed 相似文献
9.
Yue-Ming Hsin Hung-Tsao Hsu Chang-Cheng Chuo Jen-Inn Chyi 《Electron Device Letters, IEEE》2001,22(11):501-503
First dc, small signal, and RF power characteristics of GaN/InGaN doped-channel heterojunction field effect transistors (HFETs) are reported. HFETs with a 1-μm gate length have demonstrated a maximum drain current of 272 mA/mm, a flat Gm around 65 mS/mm in a V GS between -0.65 V and +2.0 V, and an on-state breakdown voltage over 50 V. Complete pinchoff was observed for a -3.5 V gate bias. Devices with a 1-μm gate length have exhibited an fT of 8 GHz and fmax of 20 GHz. A saturated output power of 26 dBm was obtained at 1.9 GHz for a 1 μm×1 mm device 相似文献
10.
The authors report the fabrication and characterisation of an Al 0.43Ga0.57As/In0.2Ga0.8 As/GaAs pseudomorphic HEMT (PHEMT) with high channel conductivity grown by solid source MBE. The high conductivity of the channel is a direct consequence of the high sheet charge and high mobility that has recently been obtained by using tellurium as the n-type dopant in 43% AlGaAs. The device characteristics reflect the resulting reduction in the parasitic resistances of the high channel conductivity. Microwave measurements yield a short-circuit current gain cutoff frequency fT of 11 GHz and maximum oscillation frequency fmax of 25 GHz. A high gate-drain breakdown voltage of 26 V along with a maximum drain current density of 400 mA/mm obtained in the device illustrate the applicability of this technology in microwave power field effect transistors 相似文献
11.
Wong M.M. Chowdhury U. Sicault D. Becher D.T. Denyszyn J.C. Zhu T.G. Feng M. Dupuis R.D. 《Electronics letters》2002,38(9):428-429
The performance of an innovative delta-doped AlGaN/AlN/GaN heterojunction field-effect transistor (HFET) structure is reported. The epitaxial heterostructures were grown on semi-insulating SiC substrates by low-pressure metalorganic chemical vapour deposition. These structures exhibit a maximum carrier mobility of 1058 cm2/V s and a sheet carrier density of 2.35×1013 cm-2 at room temperature, corresponding to a large ns μn product of 2.49×1016 V s. HFET devices with 0.25 μm gate length were fabricated and exhibited a maximum current density as high as 1.5 A/mm (at VG=+1 V) and a peak transconductance of gm=240 mS/mm. High-frequency device measurements yielded a cutoff frequency of ft≃50 GHz and maximum oscillation frequency fmax≃130 GHz 相似文献
12.
GaN microwave electronics 总被引:7,自引:0,他引:7
Mishra U.K. Yi-Feng Wu Keller B.P. Keller S. Denbaars S.P. 《Microwave Theory and Techniques》1998,46(6):756-761
In this paper, recent progress of AlGaN/GaN-based power high-electron-mobility transistors (HEMT's) is reviewed. Remarkable improvement in performances was obtained through adoption of high Al contents in the AlGaN layer. The mobility in these modulation-doped structures is about 1200 cm2.V-1.s-1 at 300 K with sheet densities of over 1×1013 cm-2 . The current density is over 1 A/mm with gate-drain breakdown voltages up to 280 V. Ft values up to 52 GHz have been demonstrated. Continuous wave (CW) power densities greater than 3 W/mm at 18 GHz have been achieved 相似文献
13.
Wu Y.-F. Keller B.P. Keller S. Nguyen N.X. Le M. Nguyen C. Jenkins T.J. Kehias L.T. Denbaars S.P. Mishra U.K. 《Electron Device Letters, IEEE》1997,18(9):438-440
A thin barrier-donor layer of 200 Å was used to increase the active input capacitance and improve the extrinsic current-gain cutoff frequency (ft) of short-gate-length AlGaN/GaN MODFETs. 0.2-μm gate-length devices fabricated on such an epi-structure with sheet carrier density of ~8×1012 cm-2 and mobility of 1200 cm2/Vs showed a record ft of 50 GHz for GaN based FETs. High channel saturation current and transconductance of 800 mA/mm and 240 mS/mm respectively were also achieved along with breakdown voltages of 80 V per μm gate-drain spacing. These excellent characteristics translated into a CW output power density of 1.7 W/mm at 10 GHz, exceeding previous record for a solid-state HEMT 相似文献
14.
Ge-channel modulation-doped field-effect transistors (MODFET's) with extremely high transconductance are reported. The devices were fabricated on a compressive-strained Ge/Si0.4Ge0.6 heterostructure with a Hall mobility of 1750 cm2/Vs (30,900 cm2/Vs) at room temperature (77 K). Self-aligned, T-gate p-MODFET's with Lg=0.1 μm displayed an average peak extrinsic transconductance (g(mext)) of 439 mS/mm, at a drain-to-source bias voltage (Vds) of -0.6 V, with the best device having a value of g(mext)=488 mS/mm. At 77 K, values as high as g(mext)=687 mS/mm were obtained at a bias voltage of only Vds=-0.2 V. These devices also displayed a unity current gain cutoff frequency (fT) of 42 GHz and maximum frequency of oscillation (fmax) of 86 GHz at Vds=-0.6 V and -1.0 V, respectively 相似文献
15.
16.
X.L. Wang T.S. Chen H.L. Xiao C.M. Wang G.X. Hu W.J. Luo J. Tang L.C. Guo J.M. Li 《Solid-state electronics》2008,52(6):926-929
Optimized AlGaN/AlN/GaN high electron mobility transistors (HEMTs) structures were grown on 2-in. semi-insulating (SI) 6H-SiC substrate by metal–organic chemical vapor deposition (MOCVD). The 2-in. HEMT wafer exhibited a low average sheet resistance of 305.3 Ω/sq with a uniformity of 3.85%. The fabricated large periphery device with a dimension of 0.35 μm × 2 mm demonstrated high performance, with a maximum DC current density of 1360 mA/mm, a transconductance of 460 mS/mm, a breakdown voltage larger than 80 V, a current gain cut-off frequency of 24 GHz and a maximum oscillation frequency of 34 GHz. Under the condition of continuous-wave (CW) at 8 GHz, the device achieved 18.1 W output power with a power density of 9.05 W/mm and power-added-efficiency (PAE) of 36.4%. While the corresponding results of pulse condition at 8 GHz are 22.4 W output power with 11.2 W/mm power density and 45.3% PAE. These are the state-of-the-art power performance ever reported for this physical dimension of GaN HEMTs based on SiC substrate at 8 GHz. 相似文献
17.
Sawdai D. Yang K. Hsu S.S.-H. Pavlidis D. Haddad G.I. 《Microwave Theory and Techniques》1999,47(8):1449-1456
The microwave and power performance of fabricated InP-based single and double heterojunction bipolar transistors (HBTs) is presented. The single heterojunction bipolar transistors (SHBTs), which had a 5000 Å InGaAs collector, had BVCEO of 7.2 V and JCmax of 2×105 A/cm2. The resulting HBTs with 2×10 μm2 emitters produced up to 1.1 mW/μm2 at 8 GHz with efficiencies over 30%. Double heterojunction bipolar transistors (DHBTs) with a 3000-Å InP collector had a BVCEO of 9 V and Jc max of 1.1×105 A/cm2, resulting in power densities up to 1.9 mW/μm2 at 8 GHz and a peak efficiency of 46%. Similar DHBTs with a 6000 Å InP collector had a higher BVCEO of 18 V, but the J c max decreased to 0.4×105 A/cm2 due to current blocking at the base-collector junction. Although the 6000 Å InP collector provided higher fmax and gain than the 3000 Å collector, the lower Jc max reduced its maximum power density below that of the SHBT wafer. The impact on power performance of various device characteristics, such as knee voltage, breakdown voltage, and maximum current density, are analyzed and discussed 相似文献
18.
Scherrer D. Kruse J. Laskar J. Feng M. Wada M. Takano C. Kasahara J. 《Electron Device Letters, IEEE》1993,14(9):428-430
The low-power microwave performance of an enhancement-mode ion-implanted GaAs JFET is reported. A 0.5-μm×100-μm E-JFET with a threshold voltage of V th=0.3 V achieved a maximum DC transconductance of g m=489 mS/mm at V ds=1.5 V and I ds=18 mA. Operating at 0.5 mW of power with V ds=0.5 V and I ds =1 mA, the best device on a 3-in wafer achieved a noise figure of 0.8 dB with an associated gain of 9.6 dB measured at 4 GHz. Across a 3-in wafer the average noise figure was F min=1.2 dB and the average associated gain was G a=9.8 dB for 15 devices measured. These results demonstrate that the E-JFET is an excellent choice for low-power personal communication applications 相似文献
19.
The millimeter-wave power performance of a 75-μm×0.3-μm InP MISFET with SiO2 insulator is presented. The combination of high intrinsic transconductance (120 mS/mm), current density (1 A/mm), and gate-source and gate-drain breakdown voltages (35 V) led to a record power density of 1.8 W/mm and 20% power-added efficiency at 30 GHz. This power density is the highest ever reported for any three-terminal device at this frequency 相似文献
20.
Olsson J. Rorsman N. Vestling L. Fager C. Ankarcrona J. Zirath H. Eklund K.-H. 《Electron Device Letters, IEEE》2002,23(4):206-208
In this letter, we present state-of-the-art performance, in terms of output power density, for an RF-power LDMOS transistor. The novel device structure has a dual-layer RESURF of the drift region, which allows for a sub-μm channel length and a high breakdown voltage of 110 V. The output power density is more than 2 W/mm at 1 GHz and a VDS=70 V, with a stable gain of 23 dB at VDS=50 V. At 3.2 GHz the power density is over 1 W/mm at VDS=50 V and 0.6 W/mm at VDS=28 V. These results are to our knowledge the best ever for silicon power MOSFETs 相似文献