A theoretical analysis of C.C.D. operation with square clock pulses

Currently published analyses of C.C.D. operation have dealt with the case where a fixed voltage is maintained on the gate above the emptying well during the charge transfer process. However, in contrast to this, most C.C.D.'s appear to be operated with square or trapezoidal clock pulses. The consequences of rapidly falling gate voltages are discussed and a simple mathematical model is developed to illustrate the situation. It is shown that if the falling edges of the clock pulses are too steep the operation of the C.C.D. will be degraded in that carriers may be lost by recombination and the overall transfer process will be slowed down due to the smaller electrostatic fields which are developed.     

1.3-μm GaInAsP/InP transverse-mode stabilized buried-crescentlasers by a new fabrication technique using a reactive ion beam etching

Transverse-mode-stabilized, 1.3-μm, GaInAsP/InP, buried-crescent (BC) lasers fabricated using a reactive ion beam etching (RIBE) technique are presented. Yields of single-transverse-mode operation as high as 95% are achieved with low threshold currents of 11-25 mA. Transverse-mode stability under both high-power and long-term operation (50°C, 20 mW, 1000 h) is demonstrated. A coupling efficiency into a single-mode fiber of 63% and a coupled power of 40 mW at 160 mA are achieved. Stable continuous-wave operation is also confirmed under a constant power of 5 mW (50 and 70°C) and 20 mW (50°C) in an aging test     

基于远程监控的测控设备深度自动化系统设计

随着自动化运行的测控设备不断增多和长管任务的日益繁重,目前远程监控中心的测控设备自动化运行方式已渐渐不能满足任务的需求。针对远程监控中心测控设备自动化运行现状,分析了其存在的问题,提出了远程监控中心测控设备深度自动化运行需求,给出了深度自动化系统建设方案,为远程监控中心测控设备深度自动化建设提供了理论依据。     

建立适应未来联合作战需要的电子战C4ISR系统

分析未来联合信息作战对电子战指挥自动化系统的要求以及目前指挥自动化系统发展与建设中存在的问题 ,提出适应未来联合信息作战需要的电子战指挥自动化系统方案构想     

基于嵌入式Linux的CAN总线驱动设计与实现

CAN（控制器局域网）总线技术在嵌入式系统开发中有着广泛应用,虽然CAN总线通信控制芯片众多,但是要在嵌入式操作系统下扩展CAN总线设备需要设计相应的驱动程序。文中针对CAN总线的技术特点,并结合嵌入式Linux操作系统的优点和嵌入式处理器S3C2410丰富的片内资源,实现了在S3C2410上CAN总线设备的硬件扩展设计,介绍了嵌入式Linux系统上的CAN设备驱动程序的开发流程以及设计方法和技巧,并描述了CAN设备驱动程序的具体实现。     

A high-density dual-port memory cell operation and arrayarchitecture for ULSI DRAMs

A high-density dual-port DRAM architecture is proposed. It realizes a two-transistor/one-capacitor (2Tr-1C) dual-port memory cell array with immunity against the array noise caused by the dual-port operation. This architecture, called a truly dual-port (TDP) DRAM, adopts the previously proposed divided/shared bit-line (DSB) sensing scheme in a dual-port 2Tr-1C DRAM array. A 2Tr-1C dual-port memory cell array with folded bit-line sensing operation, which does not increase the number of bit lines of the 1Tr-1C folded bit-line memory array, is realized, thus reducing the memory cell size. This architecture offers a solution to the fundamental limitations in the 2Tr-1C dual-port memory cell, and it is easily applicable to dual-port memory cores in ASIC environments. An analysis of the memory array noise in various dual-port architectures shows a significant improvement with this architecture. Applications to the complete pipelining operation of a DRAM array and a refresh-free DRAM core are also discussed     

基于一种NAND闪存页缓存器设计的C/F读取算法研究

为减小共源线噪声对NAND闪存读可靠性的影响,设计了一种可实现C/F（Coarse/Fine）读取操作的页缓存器电路,并设计实现了适用于此电路的C/F读取算法,显著减小了共源线噪声.该算法通过两次子读感应读取存储单元,在第一次子读感应中分辨出阈值电压较低的存储单元并标记在页缓存器中,使其不再进行第二次子读感应,从而减小共源线噪声引起的阈值偏移.电路仿真计算表明,该支持C/F读取算法的页缓存器结构能够减小阈值偏移至少495.6mV,有效提高了NAND闪存读操作的精确性.     

V-grooved substrate buried heterostructure InGaAsP/InP laser emitting at 1.3 µm wavelength

Details of the fabrication, optimization of the dimensions of the active region, characteristics, and the aging results of theV- grooved substrate buried heterostructure (VSB) InGaAsP/InP laser are described. It is shown that the VSB laser can be fabricated in one-step epitaxy as well as two-step epitaxy. The active region width below 2.5 μm and the thickness of0.15-0.2 mum are shown to give stable fundamental mode operation and good temperature characteristics. The fundamental mode operation up to the optical output of 20 mW/facet at 25°C and the CW operation above 100°C are obtained. The pulse response showed the strongly damped relaxation oscillation with a frequency as high as 4.5 GHz. The spectral width under the modulation of 400 Mbit/s RZ single is as narrow as 25 Å in full width at half maximum. Highly stable aging characteristics at an elevated temperature of 50°C are obtained in both two-step epitaxy lasers and one-step epitaxy lasers.     

Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers

Room-temperature pulsed operation of InGaAsP (1.3 mu m)/InP vertical cavity surface emitting lasers has been achieved with threshold current as low as 50 mA using a constricted-mesa structure with dielectric mirrors. Above-room-temperature operation has also been realized with a maximum operation temperature of 66 degrees C. Pulsed and continuous-wave threshold currents at 77 K are 1.5 and 3.9 mA, respectively.<>     

利用I~2C总线实现DSP对增强型视频输入处理器SAA7111A EVIP的配置

介绍了TMS320VC5509A的I2C模块的内部结构和工作原理、I2C总线数据特点以及增强型视频输入处理器SAA7111A EVIP(Enhanced Video Input Processor)的I2C接口的特点及其内部控制寄存器.在此基础上详细阐述了如何利用CCS提供的片上支持库(CSL)对DSP内部的I2C模块进行初始化,并通过I2C总线对SAA7111A EVIP进行配置的过程.     

Low-threshold-current distributed-feedback InGaAsP/InP CW lasers

Distributed-feedback buried-heterostructure InGaAsP/InP lasers with room temperature CW threshold current as low as 50 mA, corresponding to a current density of 2.3 kA/cm2, are presented. CW operation in the temperature range from ?20°C to 58°C was confirmed.     

Recent Advances in Gallium Phosphide Junction Devices for High-Temperature Electronic Applications

Recent advances in gallium phosphide technology are reviewed as they relate to high-temperature (T > 300°C) device applications. The electronic properties and materials aspects of GaP are summarized and compared to silicon and gallium arsenide. Minority-carrier unction devices are discussed as one area where this technology could have wide application. In this light, the high-temperature operation of two junction devices, a diode and a bipolar junction transistor (BJT), are displayed. The GaP diode is observed to provide excellent rectification properties with very low leakage over the full temperature range from 20°C to 400°C (< 3x10 -3A/cm2 at VR = 3 V, T = 400°C) and has demonstrated stable operation under bias for over 1000 h at 300°. The bipolar transistor has demonstrated constant current gain (6 < ? B < 10) and very low collector-base leakage for temperatures up to 450°C (ICO 80 μA at VCB = 3 V, T = 450°C). The contacting technology to GaP is identified as one area where additional work is necessary.     

Low temperature continuous operation of vertical-cavitysurface-emitting lasers with wavelength below 700 nm

Low-temperature continuous operation of vertical-cavity surface-emitting lasers with wavelength below 700 nm is discussed. For heat sink temperatures below -25°C, threshold currents less than 4 mA and optical power of several milliwatts are obtained. The possibility of achieving efficient room temperature continuous operation is discussed     

基于C8051F020的触摸屏驱动控制

C8051F020单片机通过SPI接口驱动四线电阻式触摸屏控制器TSC2046,利用中断方式驱动TSC2046设计软件。介绍了触摸屏的工作原理、TSC2046工作方式以及典型应用电路。     

Monolithically integrated 780-nm-band high-power and 650-nm-bandlaser diodes with real refractive index guided self-aligned structure

780-nm-band high-power and 650-nm-band laser diodes (LDs) with real refractive index guided self-aligned (RISA) structures are monolithically integrated for the first time. High-power and fundamental transverse mode operation at an output power of 100-mW continuous wave (CW) up to 80°C is attained for the 780-nm-band LD. For the 650-nm-band LD, high temperature and fundamental transverse mode operation at an output power of 10-mW CW up to 80°C is obtained     

InGaAsP/InP buried crescent laser diode emitting at 1.3 µm wavelength

The fabrication procedure, designing of an active region and a p-n-p-n current blocking structure, characteristics and the aging results of an InGaAsP/InP buried crescent (BC) laser diode are described. The BC laser diodes exhibit high laser performances, such as a low-threshold current, a fundamental transverse mode oscillation with linear light output-current characteristics. CW operation at as high as 100°C is achieved with a junction up configuration as a result of the improvement in the current blocking structure. A stable CW operation at 80°C has been realized with a constant optical output power of 5 mW.     

一体化空调在3G基站的应用

随着C网运营承接,如何在确保C网安全运行的前提下,稳妥推进基站节能技术应用,是当前面临的新问题。文中通过对3G基站空调的配置要求及使用现状的介绍,阐述了基站一体化空调的工作原理和特点,提出了基站节能、防盗的解决方案,论证了一体化空调在基站使用的实用性。     

综合电子信息系统（C^4ISR）运用对作战行动的影响

综合电子信息系统对于作战行动的影响是关系到未来战争成败的关键。文章从四个方面对综合电子信息系统对作战行动的影响进行了研究，重点阐述了综合电予信息系统对于战斗进程、作战样式、指挥体制、作战结果等方面的影响。     

On the design of neodymium miniature lasers

A general approach to an optimum design of miniature Nd lasers is described. Operation at 1.05 as well as 1.32 μm is considered. Maximum power output is the main criterion, and the consequences on the choice of material, neodymium concentration, laser dimensions, and pumping scheme are deduced. As an illustration, the design procedure and functioning of an Nd-pentaphosphate laser side-pumped by LED arrays are described. Pulsed operation is obtained with the laser crystal held at -13.5°C, and CW operation is possible below -49°C, the planar LED arrays being held at room temperature.     

InGaAsP InP current confinement mesa substrate buried heterostructure laser diode fabricated by one-step liquid-phase epitaxy

New InGaAsP/InP buried heterostructure laser diodes fabricated by one-step liquid-phase epitaxy are described, in which the InGaAsP active region completely embedded in InP is grown on the top of the mesa stripe formed on the InP substrate while, simultaneously, current confinement structure is automatically formed on both sides of the mesa stripe. These current confinement mesa substrate buried heterostructure laser diodes (CCM-LD's) have current confinement structure which very effectively blocks unwanted leakage current bypassing the light emitting region which has enabled laser operation with a threshold current as low as 20 mA, 70-mW maximum CW output at room temperature, and 125°C maximum CW operation temperature. Life tests over 6000-h CW operation at 70°C and 5 mW/facet have confirmed good reliability of these devices.