Correction to: Asymmetric RF MEMS resonant switch for high speed switching applications

Microsystem Technologies - Unfortunately, the affiliation details of the authors have been published incorrectly. The correct details are given below.     

Design of MEMS switch for RF applications

Components like passive electronically scanned (sub) arrays, T/R modules, reconfigurable antennas etc., in RF applications are in need of MEMS switches for its re-configurability and polarization. This paper presents the analysis, design and simulation of a MEMS switch. The switch proposed in this paper is intended to work in the frequency range of 4–8 GHz. The proposed switch fulfills the switching characteristics concerning the five requirements loss, linearity, high switching speed, small size/power consumption, low pull down voltage following a relatively simple design, which ensures reliability, robustness and high fabrication yield. The switch implemented in this paper is based on the integration mode of operation and widely used in RF applications.     

Multiport RF MEMS switch for satellite payload applications

Microsystem Technologies - Design, fabrication and characterization of a novel RF switch is proposed in this paper. The multiport RF MEMS switch provides a single input multiple output novel...     

Compact high isolation and improved bandwidth hybrid RF MEMS SPDT switch for 5G applications

Microsystem Technologies - Fifth generation (5G) communication system enables the pathway for a higher data transfer rate. The frequency bands used for 5G communication system are distributed from...     

Design of a packaging-friendly double-topology RF MEMS switch for space applications

Microsystem Technologies - This article presents the results of the research, design and a series of manufacturing steps of an RF-MEMS switch to be used in space communication systems. Design and...     

Design and analysis of RF MEMS shunt switch for V-band applications

Microsystem Technologies - In this paper, we have designed and simulations of RF MEMS shunt switch. The electro-mechanical and electromagnetic analysis of the switch have been done using COMSOL...     

A low-voltage lateral MEMS switch with high RF performance

MEMS switches are one of the most promising future micromachined products that have attracted numerous research efforts in recent years. The majority of MEMS switches reported to date employ electrostatic actuation, which requires large actuation voltages. Few are lateral relays and those often require nonstandard post process, and none of them is intended for high-frequency applications. We have developed an electrothermally actuated lateral-contact microrelay for RF applications. It is designed and fabricated on both low-resistivity and high-resistivity silicon substrate using surface micromachining techniques. The microrelay utilizing the parallel six-beam actuator requires an actuation voltage of 2.5-3.5 V. Time response is measured to be 300 /spl mu/s and maximum operating frequency is 2.1 kHz. The RF signal line has a current handling capability of approximately 50 mA. The microrelay's power consumption is in the range of 60-100 mW. The lateral contact mechanism of the microrelay provides a high RF performance. The microrelay has an off-state isolation of -20 dB at 40 GHz and an insertion loss of -0.1 dB up to 50 GHz. The simplicity of this 4-mask fabrication process enables the possibility of integrating the microrelay with other passive RF MEMS components.     

Design of a novel step structure RF MEMS switch for K-band applications

Microsystem Technologies - In this paper, we have design a proposed step structure RF MEMS switch for K-band applications. The non-uniform meander structure is implemented for both optimized and...     

Analysis of electromagnetic interference of a capacitive RF MEMS switch during switching

Based on the dynamic model of the membrane bridge for a capacitive RF MEMS switch, the switching process may be divided into four stages: the charging of the switch capacitor, pull-down of the bridge, discharging of the switch capacitor, and the release of the bridge. A model for the electromagnetic field produced in each stage is developed by using Maxwell equations. In the charging stage and the discharging stage, the value of the magnetic field produced is invariable (6, 20.7 A/m) and the electric field increases or decreases linearly. But in the pull-down stage the electromagnetic field produced is a pulse field (maximum value is 6.05 A/m). In the release stage, the magnitude of the electromagnetic field is too small to be considered. The electromagnetic field will induce noise on the RF signal in the CPW during switching. Finally, the electromagnetic field model is verified by numerical simulations. The electromagnetic field model and analysis presented here are valuable to optimize the design in order to minimize the electromagnetic interference.     

Design and analysis of SP4T RF MEMS switch for satellite applications

Microsystem Technologies - In this paper, SP4T (Single Pole four throw) type RF MEMS Switch is designed for Satellite applications. The beam thickness of the switch is varying from...     

发展中的RF MEMS开关技术

从驱动方式和机械结构的角度介绍了不同的RF MEMS开关类型,分析了各类MEMS开关的性能及优缺点,分析了MEMS开关在制作和发展中面临的牺牲层技术、封装技术、可靠性问题等关键技术和问题,介绍了MEMS开关的发展现状及其在组件级和系统级的应用,以及对MEMS开关技术的展望。     

Low-actuation voltage RF MEMS shunt switch with cold switching lifetime of seven billion cycles

This paper investigates the performance and lifetime of a metal-to-metal shunt RF MEMS switch fabricated on an SI-GaAs substrate. The switch is a shunt bridge design that is compatible with standard microelectronic processing techniques. The RF performance of the switch includes actuation voltages of less than 15 V, isolation better than 20 dB from 0.25 to 40 GHz, and switching speeds of less than 22 /spl mu/s. Varying the geometry of the switch affects both switching voltage and reliability, and the tradeoffs are discussed. We have developed a cold switching test method to identify the root cause of sticking as a failure mechanism. The switch structure includes "separation posts" that eliminate sticking failure and has demonstrated lifetimes as high as 7/spl times/10/sup 9/ cold switching cycles. These results show that good reliability is possible with a metal-to-metal RF MEMS switch operated with a low actuation voltage.     

Design and simulation of RF MEMS shunt capacitive switch with non-uniform meanders for C-band applications

Microsystem Technologies - This paper presents, the design and simulation of RF MEMS shunt capacitive switch. The electromechanical and electromagnetic analysis of the switch has been done using...     

Performance analysis of series: shunt configuration based RF MEMS switch for satellite communication applications

Microsystem Technologies - In this paper the RF-MEMS switch with series–shunt configuration on a single quartz substrate is presented to achieve high isolation than the individual series or...     

Low temperature epoxy bonding for RF MEMS capacitive switch

Packaging is one of the most critical tasks for MEMS devices. Unlike solid state devices, MEMS structures involves moving structures which needs to be protected from outer environment ensuring free movement of the structure. In the present paper, inverted silicon cavity is used for capping the MEMS devices. However, in case of RF MEMS, silicon cavity would add parasitics and affects its electrical performance. Enclosing the MEMS structure, its mechanical response will also alter. The electrical as well as mechanical characteristics of the RF MEMS switch are analyzed using finite element method simulations. The electrical response of the fabricated switch after packaging is compared with unpackaged device.

     

一种平板式MEMSRF射频开关的设计

介绍了一种实用的平板电容式MEMSRF射频开关。研究了外加驱动电压与由此所引起的极板间距和极板受力变化之间的非线性关系,提出了一种有效的基于有限元的设计分析方法,在此基础上设计了相应的MEMS加工工艺流程,并给出了具体的MEMS工艺。     

RF MEMS悬臂梁开关的设计与仿真

利用有限元软件HFSS和ANSYS系统研究了串联MEMS开关的微波性能和力学性能与其结构参数之间的关系,并在此基础上优化出悬臂梁开关的几何结构参数,设计了RF MEMS开关,实验表明：在外施电压为10V左右时,悬臂梁的挠度可达3μm左右,5GHz时,回波损耗小于0．2dB,隔离度大于35dB。     

A comprehensive study on RF MEMS switch

This paper emphasis on state-of-the-art of the earlier until the current trend and demand, principles, design considerations, key performance and fabrication technology of RF MEMS switch devices developed over the past few years. RF MEMS switch performance and features such as actuation voltage, insertion loss, isolation and ease with cost of fabrication and applications are compared and discussed.     

A low voltage vertical comb RF MEMS switch

Design and simulations of a novel RF MEMS switch is reported as a solution to many RF wireless applications. A new comb structure for RF MEMS switch is proposed for low voltage and high frequency operations. Isolation degree and actuation voltage, both improved by the new structure. The mechanical and electromagnetic simulation results show better performance for this new switch compared to parallel plate switch. The simulation is done by the intellisuit and HFSS softwares. The Simulation results show that the actuation voltage is decreased by 13% and the linearity of the switch displacement with respect to the actuation voltage is improved by 22% compared to the parallel plate structure. The HFSS simulation results indicate an insertion loss better than 0.33 dB at 50 GHz and isolation greater than 13.4 dB at 50 GHz.     

Effect of residual stress on RF MEMS switch

Studies have been carried out on a RF MEMS shunt switch to analyze the effect of residual stress on its electromechanical characteristics. This paper presents the simulated results as well as theoretically calculated results of a shunt switch due to the presence of residual stress gradient in respect of resonant frequency, pull down voltage and switching characteristics. The effect of introduction of holes in the beam is also studied. The calculated results, corresponding to the switch (without holes) at zero residual stress, of resonant frequency, pull-down voltage and switch on and off time are 28.14 kHz, 28.2 V, 16.35 μsec and 8.6 μsec respectively. Modal analysis of the both the structures (with and without holes) are carried out for different values of residual stress gradients. Modal analysis predicted that higher values of tensile stress gradient are not favorable for switching action. The pull-down voltages and switch on and off times are simulated at different stress gradients. With the increase in compressive stress gradient, the pull-down voltage is found to increase, whereas, switch on and off times is decreased. Corresponding to −20 MPa/μm residual stress gradient, the resonant frequency, pull-down voltage and switch on and off times are found to be 74.5 kHz, 63.5 V, 7.5 μsec and 3.36 μsec respectively. Introduction holes in the structure modified these values to 63.77 kHz, 53.1 V, 8.7 μsec, 3.92 μsec respectively.