GaInP2/Ge异质结外延材料特性分析

研制了一种基于Ge衬底的异质结热光伏(TPV)电池 ,并且在Ge衬底上用金属有机化学气相沉积(MOCVD)法外延单晶材料GaInP₂和GaAs,对GaInP₂/Ge异质结界面进行了断面扫描电镜(SEM)、X射线衍射(XRD)、电化学电 容电压(ECV)和光致荧光(PL)谱的测试分析,研究了基于 Ge衬底的异质结n-GaInP₂/p-Ge界面的结构、光学和电学特性,得到了高质量、宽禁带 的单晶外延层,与Ge衬底晶格匹配良好,利于更多光子进入到吸收层,为制备高效率TPV电 池打下良好基础。     

RF-PECVD法制备高Ge含量微晶Si-Ge薄膜及太阳电池

采用射频等离子体增强化学气相沉积 (RF-PECVD) 技术,研究了衬底温度对高Ge 含量(≈50%)微晶Si-Ge(μc-SiGe:H)薄膜结构特性 和电学特性的影响。结 果表明:较低的衬底温度会抑制 μc-SiGe:H薄膜(220)晶向的择优生长;而当衬底温度过高 时,μc-SiGe:H薄膜的O含量和微 结构因子较大。在衬底温度为200℃时,获得了光电特性和结构特性 较优的高Ge含 量μc-SiGe:H薄膜。将优化好的μc-SiGe:H薄膜应用到电池中,在本征层 为600nm的情况下, 获得了转换效率为3.31%(J_sc=22.5mA/cm²,V_oc=0.32V,FF=0.46)的单结μc-Si Ge:H电池,电池在1100nm处的光谱响应 达5.49%。     

修饰银纳米粒子的石墨烯泡沫镍衬底制备及其SERS活性研究

为了解决表面增强拉曼散射(SERS)衬底的吸附性差、稳定性低以及灵敏度不高的问题,设计了一种沉积银纳米粒子的石墨烯泡沫镍SERS衬底,并进行了实验研究.利用化学气相沉积法在泡沫镍衬底上生长石墨烯,并通过溶液沉积的方法将合成的银纳米粒子沉积在石墨烯泡沫镍衬底表面,烘干后制备成石墨烯泡沫镍修饰银纳米粒子的新型SERS衬底.采用罗丹明6G(R6G)对SERS衬底进行拉曼实验研究,结果表明石墨烯能够较好地淬灭SERS衬底的背景荧光;泡沫镍的独特三维结构能够增大衬底对检测分子的吸附;同时,银纳米粒子也可大幅增强衬底的SERS活性.而修饰了银纳米粒子的石墨烯泡沫镍新型衬底同时具有以上优异特性,是一种具有很大应用潜力的新型SERS衬底.     

生长温度对于Ge衬底上分子束外延生长的InGaAs/GaAs量子阱结构质量的影响

本文研究了斜切割（100）Ge衬底上InxGa1-xAs/GaAs量子阱结构的分子束外延生长（In组分为0.17或者0.3）。所生长的样品用原子力显微镜、光致发光光谱和高分辨率透射电子显微镜进行了测量和表征。结果发现,为了生长没有反相畴的GaAs缓冲层,必须对Ge衬底进行高温退火。在GaAs外延层和InxGa1-xAs/GaAs量子阱结构的生长过程中,生长温度是一个至关重要的参数。文中讨论了温度对于外延材料质量的影响机理。通过优化生长温度,Ge衬底上的InxGa1-xAs/GaAs量子阱结构的光致发光谱具有很高的强度、很窄的线宽,样品的表面光滑平整。这些研究表面Ge 衬底上的III-V族化合物半导体材料有很大的器件应用前景。     

Co/a-GeSi/Ti/Si多层薄膜固相反应外延生长CoSi_2薄膜

研究了在 Co/Ti/Si结构中加入非晶 Ge Si层对 Co Si2 /Si异质固相外延的影响 ,用离子束溅射方法在Si衬底上制备 Co/Ge Si/Ti/Si结构多层薄膜 ,通过快速热退火使多层薄膜发生固相反应。采用四探针电阻仪、AES、XRD、RBS等方法进行测试。实验表明 ,利用 Co/Ge Si/Ti/Si固相反应形成的 Co Si2 薄膜具有良好的外延特性和电学特性 ,Ti中间层和非晶 Ge Si中间层具有促进和改善 Co Si2 外延质量 ,减少衬底耗硅量的作用。Ge原子的存在能够改善外延 Co Si2 薄膜的晶格失配率     

射频功率和衬底温度对碳化锗膜中sp3杂化碳原子的影响

利用磁控溅射方法以CH4和Ar的混合放电气体溅射单晶Ge靶制备碳化锗(Ge1-xCx)薄膜,通过XPS、Raman和Nanoindentation等表征手段系统地研究了射频功率和衬底温度对所获薄膜成分、键合结构及力学性质的影响。研究发现:射频功率和衬底温度的增加均能提高膜中的Ge含量,这分别归因于Ge溅射产额的增加以及含碳基团在衬底上脱附作用的增强。Ge含量的增加促进了sp2C-C键转变为sp3Ge-C键,进而显著提高了膜中sp3杂化碳原子的相对含量并改善了Ge1-xCx薄膜的硬度。这些结果表明:提高射频功率和衬底温度是制备富含sp3C的硬质碳化锗薄膜的有效途径。     

太阳电池用Ge抛光片清洗技术的研究进展

Ge抛光片作为化合物太阳电池的衬底材料已引起人们的广泛关注。制备工艺要求衬底材料的表面具有稳定的化学特性和高的清洁度,因此,Ge抛光片的清洗技术显得尤为重要。Ge在常温下既不与浓碱发生反应,也不与单一的强酸反应,其清洗机理与Si、GaAs等材料相差较大。在实验和查阅文献的基础上,阐述了Ge抛光片的清洗机理,介绍了太阳电池用Ge抛光片表面的宏观沾污和微观沾污的清洗方法和过程、同时对Ge抛光片表面的氧化状态进行了分析。另外,还对目前国内外Ge抛光片清洗技术的研究现状及技术水平做了介绍,指出了Ge抛光片清洗技术存在的问题,并对其发展趋势进行了展望。     

空间太阳电池用超薄Ge单晶片的CMP技术

以Ge单晶抛光片为衬底的空间太阳电池在我国的应用已越来越多。目前,抛光后Ge单晶片的几何参数,尤其是表面状态常不能满足使用要求。介绍了超薄Ge衬底片抛光的工艺技术,开展了抛光压力、抛光盘转速与抛光去除速率的关系实验,对影响Ge单晶抛光片几何参数和表面质量的原因进行了分析和实验研究。工艺优化后抛光的产品完全满足了空间高效太阳电池的衬底的使用要求。     

应变Si1-xGex沟道PMOSFET空穴局域化研究

为充分利用应变 Si Ge材料相对于 Si较高的空穴迁移率 ,研究了 Si/Si Ge/Si PMOSFET中垂直结构和参数同沟道开启及空穴分布之间的依赖关系。在理论分析的基础上 ,以数值模拟为手段 ,研究了栅氧化层厚度、Si帽层厚度、Si Ge层 Ge组分及厚度、缓冲层厚度及衬底掺杂浓度对阈值电压、交越电压和空穴分布的影响与作用 ,特别强调了 δ掺杂的意义。模拟和分析表明 ,栅氧化层厚度、Si帽层厚度、Si Ge层 Ge组分、衬底掺杂浓度及 δ掺杂剂量是决定空穴分布的主要因素 ,而 Si Ge层厚度、缓冲层厚度和隔离层厚度对空穴分布并不敏感。最后总结了沟道反型及空穴分布随垂直结构及参数变化的一般规律 ,为优化器件设计提供了参考。     

氧化对SOI基SiGe薄膜残余应变弛豫的影响

研究了氧化对外延在SOI衬底上的SiGe薄膜的残余应变弛豫过程的影响.通过对SiGe薄膜采用不同工艺的氧化,从而了解不同氧化条件对SOI基SiGe薄膜的应变弛豫过程的影响.氧化将会促使SiGe薄膜中的Ge原子扩散到SOI材料的顶层硅中.而SiGe薄膜的残余应变弛豫过程将会与Ge原子的扩散过程同时进行,通过对SiGe薄膜和SOI顶层硅中位错分布的分析发现:在氧化过程中,SiGe薄膜和SOI衬底之间存在一个应力传递的过程.     

多层陶瓷电容器银电极电镀锡铅失效原因分析

针对多层陶瓷电容器在电镀过程电镀锡铅效果差的问题,利用扫描电子显微镜和能谱仪分析了正常和变差样品银层的微观结构,其结果表明:电镀效果差的样品端电极银层表面出现较大面积的缺损,部分内部介质裸露,影响了后期电镀时银层的导电性,导致电镀效果变差.找出变差的原因.     

多层陶瓷电容器银电极电镀锡铅失效原因分析

针对多层陶瓷电容器在电镀过程电镀锡铅效果差的问题,利用扫描电子显微镜和能谱仪分析了正常和变差样品银层的微观结构,其结果表明：电镀效果差的样品端电极银层表面出现较大面积的缺损,部分内部介质裸露,影响了后期电镀时银层的导电性,导致电镀效果变差。     

复杂铝合金零件镀银工艺改进

介绍了复杂铝合金零件镀银工艺,分析了影响铝合金电镀层质量的因素,通过试验改进了铝合金电镀工艺,在常规二次浸锌工艺中增加了电镀锌,采用浸锌电镀锌联合处理法提高了复杂铝合金零件镀银的结合力。给出了工艺流程及各工序溶液配方和相关参数,并提出了相应的操作要点。介绍了生产过程中易出现的问题及解决办法。利用划格法和热震法检验了镀层的结合强度。测试结果表明:采用新工艺加工的零件达到了结合力的要求。     

Post metallization annealing study in La2O3/Ge MOS structure

The study on post metallization annealing (PMA) in electrical characteristics and interfacial properties of La₂O₃/Ge structures has been conducted. The PMA treatment in N₂ ambient induces the growth of interfacial Ge oxide layer accompanied with decrease of capacitance value and interface trap density. The interface-layer growth is caused by the oxidation of Ge substrate due to the hydroxyl group absorbed in La₂O₃ from the ambient. The metal electrode capping might prevent the hydroxyl from evaporating during annealing, which enhances the interface reaction. On the other hand, leakage current increment has been observed for the sample with PMA in case of using Pt gate electrode. It is due to the diffusion of Pt and/or Ge and a Pt-germanide formation in La₂O₃ film during PMA. This leakage current increment can be suppressed by using Ta or W electrode which has less reactivity with Ge than Pt at high temperature.     

Conjugated polyelectrolyte-assisted vacuum-free transfer-printing of silver nanowire network for top electrode of polymer light-emitting diodes

We report vacuum-free transfer-printing of silver nanowire (AgNW) network film as a top electrode of polymer light-emitting diodes (PLEDs) using conjugated polyelectrolyte (CPE) interfacial layer. AgNW network is delivered from a donor substrate to the desired area of the devices through an elastomeric polydimethylsiloxane (PDMS) mold stamp. The application of CPE layer with an appropriate thickness on the surface of AgNW and light-emitting polymer (LEP) films provides not only good adhesion between the organic and metal layers but also lowering of the work-function of AgNW electrode for better electron injection at LEP/AgNW interface. PLEDs with laminated AgNW top electrode at the optimized condition show the maximum device efficiencies of 3.81 cd A⁻¹ and 2.99 lm W⁻¹ at 4 V, which are comparable to those of PLEDs with Al cathode.     

Flow Field Simulation and Experimental Study of Friction Aided Jet-Electro-Deposition Based on the Wireless Information Networks

By analysing the system of friction aided jet-electro-deposition, this research developed a simulate model of the flow field to simulate the velocity of the electroplating solution and investigate the influence of flow field on electro-deposition at different electrode gaps. Simulate Results indicated that velocity of the electroplating solution was high in areas affected by jet-electro-deposition. With increased electrode gap, the velocity of the electroplating solution on the cathode surface decreased gradually, but its velocity distribution became uneven. Analyses using scanning electron microscopy and transmission electron microscopy demonstrated that choosing an appropriate electrode gap could result in both a high, and a well-distributed, velocity profile conducive to the production of nickel films with fewer defects.     

Diffusion Soldering of Pb-Doped GeTe Thermoelectric Modules with Cu Electrodes Using a Thin-Film Sn Interlayer

Directly coating a GeTe(Pb) thermoelectric device with a Ni barrier layer and an Ag reaction layer and then diffusion soldering with a Cu electrode coated with Ag and Sn leads to breakage at the GeTe(Pb)/Ni interface and low bonding strengths of about 6 MPa. An improved process, precoating with 1 μm Sn film and heating at 250°C for 3 min before electroplating with Ni and Ag layers, results in satisfactory bonding strengths ranging from 12.6 MPa to 19.1 MPa. The precoated Sn film leads to the formation of a (Ni,Ge)₃Sn₄ layer between the GeTe(Pb) thermoelectric material and Ni barrier layer, reducing the thermal stress at the GeTe(Pb)/Ni interface.     

Process development and adhesion behavior of electroless copper on liquid crystal polymer (LCP) for electronic packaging application

Liquid crystal polymer (LCP) has potentially a very wide application as substrate material in electronic packaging applications because of its unique advantages. The work in this paper was performed to realize the metallization of LCP for the purpose of board fabrication, and to study the adhesion between deposited copper and LCP. A homogenous electroless plated copper layer on LCP with 4 to 5 /spl mu/m thickness was achieved, while it increased up to 40 /spl mu/m with the subsequent electroplating. The timescale of etching, deposit ion rate, and pH value were gradually changing during the plating process and the influences on copper layer quality were investigated. The adhesion force of the copper-LCP layer system was measured by a shear-off-method. Scanning electron microscopy (SEM) was used to check the surface morphology after etching and the interface after shearing on both the backside of the copper layer and the LCP side. The relationship between the shear-off adhesion of copper and the time of chemical etching before plating was examined, and the optimal etching time is discussed. Heat treatment after plating was used, and it was shown that this significantly improved the adhesion strength.     

Electron Mobility of Doped Strained Si1-x Gex Alloys Grown on Si(100) Substrate^①②

The electron mobility for strained Si1-xGex alloy layer grown on Si(100) substrate has been calculated for doping rage of 10^17 cm^-3 to 10^20 cm^-3with Ge contents of 0.0≤x≤1.0.The results show a decrease in the mobility with increasing of Ge content and doping concentration.The electron mobility in-plane is foud to be smaller than the perpendicular component.     

Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor deposition

We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied, the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates.