工艺参数对真空紫外光直接光CVD SiO2／Si界面特性的影响

采用高频（１ＭＨｚ）Ｃ－Ｖ测试和红外谱，研究了工艺参数对Ｘｅ激发真空紫外光（ＶＵＶ）直接光ＣＶＤ ＳｉＯ２的ＳｉＯ２／Ｓｉ界面特性的影响。结果表明：衬底温度Ｔｓ对固定氧化物电荷密度ΔＮｏｔ、慢界面态密度ΔＮｓｔ的影响比反应室总气压Ｐｃ和ＳｉＨ２／Ｏ２分压比显著。ΔＮｏｔ和ΔＮｓｔ在１１０℃附近有极小值，大小为１０＾１０ｃｍ＾－２量级。Ｔｓ〉１２０℃，ΔＮｏｔ呈正电荷性，Ｔｓ〈１１０℃，ΔＮｏｔ呈负     

CVD金刚石膜制备方法及其应用

介绍了金刚石膜的应用和低压下化学汽相沉积金刚石膜的主要方法及其最新进展,并对各种方法的优缺点作了简要评述。     

直接光CVDSiO_2膜的沉积动力学

讨论了SiH4 +O2 混合气体在真空紫外光辐照下的光化学反应和SiO2 膜的沉积过程。根据光吸收定律和附面层理论推导出了直接光CVDSiO2 膜的沉积速率方程 ,这个方程与大量实验结果符合较好。     

掺氮类金刚石薄膜的电化学C-V研究

采用射频等离子体增强化学气相沉积(RF-PECVD)法携带N2或NH3制备掺氮的类金刚石(DLC∶N)薄膜,对不同掺杂方法得到DLC∶N薄膜进行电化学C-V测量.I-V和C-V曲线表明,不论是采用N2或是NH3进行掺杂都得到n型的DLC薄膜,掺NH3的样品载流子浓度能达到更高.根据样品的电化学C-V测量结果并结合X射线光电子能谱,详细研究了DLC∶N薄膜载流子浓度的纵向分布,发现在靠近薄膜与衬底界面处附近即生长初期N的掺杂浓度分布较高.     

掺氮类金刚石薄膜的电化学C-V研究

采用射频等离子体增强化学气相沉积(RF- PECVD)法携带N2 或NH3制备掺氮的类金刚石(DL C∶N)薄膜,对不同掺杂方法得到DL C∶N薄膜进行电化学C- V测量.I- V和C- V曲线表明,不论是采用N2 或是NH3进行掺杂都得到n型的DL C薄膜,掺NH3的样品载流子浓度能达到更高.根据样品的电化学C- V测量结果并结合X射线光电子能谱,详细研究了DL C∶N薄膜载流子浓度的纵向分布,发现在靠近薄膜与衬底界面处附近即生长初期N的掺杂浓度分布较高     

紫外光能量辅助CVD的反应机制

以二氧化硅，氮化硅薄膜为例论述了紫外光能量辅助化学汽相淀积的反应机制。二氧化硅薄膜的组成为纯ＳｉＯ２；氮化硅薄膜中含有氧元素，组成氮氧化硅。     

光化学气相淀积氮化硅的工艺及其应用研究——Ⅱ光化学气相淀积氮化硅膜的性质

采用红外吸收光谱(TR)，俄歇能谱(AES)、X射线光电子能谱(XPS)，二次离子质谱(SIMS)及气相色谱等方法对光化学气相淀积(光CVD)氮化硅薄膜进行了分析。     

金刚石膜MEMS及其应用

由于金刚石膜优异的力学、电学、热学及化学性质,使其成为MEMS中的微型传感器和微型结构的重要的首选材料。利用金刚石膜作为MEMS材料和各种微型机械的技术正在引起极大的兴趣。本文主要综述了金刚石MEMS器件的技术和应用。     

新型UV—CVD工艺系统的研制

由于一些半导体器件要求在低温条件下进行薄膜淀积，近年来出现了一些新的低温薄膜淀积设备。介绍新近研制的一种利用紫外光能量辅助ＣＶＤ工艺系统     

用于ULSI的低K氟化非晶碳膜研究

综述了用于超大规模集成电路中互连介质的氟化非晶碳膜（a-C:F)的制备,化学键结构,介电常数与热稳定,填隙能力,粘附性,热导率等性能,为开发具有新型功能的低介电常数材料提供了指导。     

Epitaxial garnet films by organometallic chemical vapor deposition

Epitaxial films of Y₃Fe₅O₁₂, Eu₃Fe₅O₁₂, (Eu, Y)₃Fe₅O₁₂, and Er₃Fe₅O₁₂ l-2μm thick have been chemically vapor deposited on <111> GGG and <100> SmGG garnet substrates from 1000°C to 1200°C in an oxygen atmosphere from metal organic source compounds. These source compounds which are used here for the first time in chemical vapor deposition are tris 2, 2, 6, 6, tetramethyl 3, 5 heptanedionate complexes, (thd or M(thd)₃) of the metals used. In the reactor, the individual compounds are volatilized in a helium carrier in separate source containers. The vapors are then combined, and premixed without reaction at about 300°C with a large excess of 0₂ and passed with high velocity, ∿500 cm/sec, onto an r.f. heated substrate. The growth rate under these conditions is 0.4 - 0.8μm/hr. X-ray double diffraction, glancing angle X-ray and microprobe analyses were employed to characterize the crystallinity and stoichiometry, respectively, of the resulting garnet films. They were single crystal and exhibited a lattice constant dependent upon the rare earth to Fe ratio. The Eu containing films were not pseudomorphic probably due to the large lattice mismatch between substrate and film in most cases. The erbium iron garnet films were apparently close to pseudomorphic as determined by measured film and substrate lattice constants.     

Realization of intrinsic p-type ZnO thin films by metal organic chemical vapor deposition

P-type ZnO thin films were grown on sapphire substrates with and without nitrous oxide (N₂O) by metal organic chemical vapor deposition (MOCVD). The intrinsic p-type ZnO films were achieved by controlling the Zn:O ratio in the range of 0.05–0.2 without N₂O flow. Secondary ion mass spectroscopy (SIMS) showed that the films contained little or no nitrogen (N) impurities for all samples. The p-type behavior of the samples should be due to the intrinsic acceptor-like defects V_Zn, for ZnO film grown without nitrous oxide, and N, occupying O sites as acceptors for ZnO film grown with nitrous oxide. The best p-type ZnO film has low resistivity of 0.369 Ω-cm, high carrier density of 1.62×10¹⁹ cm⁻³, and mobility of 3.14 cm²/V-s. The obtained p-type ZnO films possess a transmittance of nearly 100% in the visible region and strong near-band-edge emission.     

Ultralow-k silicon containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

Low dielectric constant materials as interlayer dielectrics (ILDs) offer a way to reduce the RC time delay in high-performance ultra-large-scale integration (ULSI) circuits. Fluorocarbon films containing silicon have been developed for interlayer applications below 50-nm linewidth technology. The preparation of the films was carried out by plasma-enhanced chemical vapor deposition (PECVD) using gas precursors of tetrafluorocarbon as the source of active species and disilane (5 vol.% in helium) as a reducing agent to control the ratio of F/C in the films. The basic properties of the low dielectric constant (low-k) interlayer dielectric films are studied as a function of the fabrication process parameters. The electrical, mechanical, chemical, and thermal properties were evaluated including dielectric constant, surface planarity, hardness, residual stress, chemical bond structure, and shrinkage upon heat treatments. The deposition process conditions were optimized for film thermal stability while maintaining a relative dielectric value as low as 2.0. The average breakdown field strength was 4.74 MV/cm. The optical energy gap was in the range 2.2–2.4 eV. The hardness and residual stress in the optimized processed SiCF films were, respectively, measured to be in the range 1.4–1.78 GPa and in the range 11.6–23.2 MPa of compressive stress.     

Effect of oxygen partial pressure on conductivity type of MgZnO nanocrystalline thin films prepared by metal-organic chemical vapor deposition

The properties of the MgZnO nanocrystalline thin films deposited on c-Al₂O₃ substrates by metal-organic chemical vapor deposition (MOCVD) at various oxygen partial pressures (Po₂) were thoroughly studied. It was found that the nanocrystalline films grown in the oxygen partial pressure range from 38 to 56 Pa were all c-axis oriented. From the atomic force microscope (AFM) images and photoluminescence (PL) spectra, we could also find that both the surface morphologies and the optical properties of the MgZnO nanocrystalline thin films depended on the oxygen partial pressure greatly. Hall effect measurements confirmed the conversion of conduction type of MgZnO under a certain range of oxygen partial pressure. With the increase of oxygen content, the crystallinity of MgZnO nanocrystalline thin films was degraded to polycrystalline and the p-type MgZnO was produced when the oxygen partial pressure was larger than 50 Pa. The hole concentration and mobility could reach to 9.71×10¹⁷ cm⁻³ and 2.44 cm² V⁻¹ s⁻¹, and the resistivity was 2.87 Ω cm while the oxygen partial pressure was 56 Pa.     

High-Quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition

In this paper, we describe the growth and characterization of high-quality GaN heteroepitaxial films grown on basal-plane sapphire substrates using metalorganic chemical vapor deposition. The quality of these films is analyzed by a variety of methods, including high-resolution x-ray diffraction, optical transmission spectroscopy, transmission electron microscopy (TEM), room temperature photoluminescence, and room-temperature Hall measurements. The x-ray diffraction full width at half maximum value of ΔΘ ～37 arc s is the narrowest reported to date for any III-V nitride film on any substrate. The x-ray rocking curves for ～0.48 μm thick GaN/Al₂O₃ heteroepitaxial layers exhibit Pendellösung fringes, indicating that even relatively thin films can be of high quality. High-resolution TEM lattice images further attest to the excellent structural quality, showing the films to be completely free of stacking faults. Furthermore, no evidence of columnar growth is observed.     

Growth of GaxIn1−xAs1−ySby alloys by metalorganic chemical vapor deposition

The quaternary GaInAsSb alloy system with direct band gaps adjustable in wavelength from 1.7 to 4.3 μm, which may provide the basis for emitters and detectors over this entire region, was studied. Alloys of GaInAsSb were grown lattice-matched on GaSb substrates by metalorganic chemical vapor deposition using a conventional atmospheric pressure horizontal reactor. The properties of the GalnAsSb alloys were characterized by single crystal x-ray rocking curves, the double crystal x-ray rocking curves, the photoluminescence and infrared absorption. A preliminary study of the capabilities of scanning electron acoustic microscopy in the characterization of GaInAsSb alloy has been made, some observations are briefly compared with scanning electron microscopy.     

Properties of low-k SiCOH films prepared by plasma-enhanced chemical vapor deposition using trimethylsilane

The properties of low-k SiCOH film deposited by plasma-enhanced chemical vapor deposition using trimethylsilane are reported here. The deposition process was performed at different temperatures from 200 to 400 °C. The influence of deposition temperature on the films were characterized using Fourier transform infrared spectroscopy (FTIR) to understand its impact on the studied properties. The films were annealed at ∼450 °C in an inert ambient after deposition in all the cases. The deposition rate decreases with increase in deposition temperature. The refractive index of the films increases as a function of deposition temperature. From FTIR spectra, OH-related bonds were not detected in films even when deposited at 200 °C. The Si-CH₃ bonds were detected in all the films and decreased monotonically from 200 to 400 °C. All deposition conditions studied resulted in films with dielectric constant less than 3, the lowest being ∼2.7 when deposited at 200 °C. All films exhibited good thermal stability.     

Chemical vapor deposition of AlxOyNz films

A chemical vapor deposition process for depositing dielectric films of aluminum oxynitride is described. AlCl₃, CO₂ and NH₃ were employed as the reactive gases in a nitrogen carrier. Films were grown from the mixed gases at 770 and 900°C in a resistively heated fused silica enclosure. The composition of the films could be varied over the entire range of the pseudobinary AlN-Al₂O₃ system by controlling the NH₃/CO₂ gas ratio with an appropriate flow of gaseous AlCl₃. Growth rate and index of refraction for the films were obtained using ellipsometric techniques. The film compositions reported were determined by electron microprobe analysis. Film structure, evaluated using transmission electron microscopy, and the electrical properties of the dielectric films have been correlated and are discussed separately in a companion paper entitled, “Some Properties of CVD Films of Al_xO_yN_z on Silicon”.     

Thermal stability of Hfl'aON films prepared by physical vapor deposition

We investigate the thermal stability of HfTaON films prepared by physical vapor deposition using high resolution transmission electronic microscope (HRTEM) and X-ray photoelectron spectroscopy (XPS). The results indicate that the magnetron-sputtered HtTaON films on Si substrate are not stable during the post-deposition an-healing (PDA). HfTaON will react with Si and form the interfacial layer at the interface between HfTaON and Si substrate. Hf-N bonds are not stale at high temperature and easily replaced by oxygen, resulting in significant loss of nitrogen from the bulk film. SiO2 buffer layer introduction at the interface of HfTaON and Si substrate may effec-tively suppress their reaction and control the formation of thicker interfacial layer. But SiO2 is a low k gate dielectric and too thicker SiO2 buffer layer will increase the gate dielectric's equivalent oxide thickness. SiON prepared by oxidation of N-implanted Si substrate has thinner physical thickness than SiO2 and is helpful to reduce the gate dielectric's equivalent oxide thickness.     

利用物理气相淀积工艺制备的HfTaON薄膜热力学稳定性研究

We investigate the thermal stability of HfTaON films prepared by physical vapor deposition using high resolution transmission electronic microscope （HRTEM） and X-ray photoelectron spectroscopy （XPS）. The results indicate that the magnetron-sputtered HfTaON films on Si substrate are not stable during the post-deposition annealing （PDA）. HfTaON will react with Si and form the interfacial layer at the interface between HfTaON and Si substrate. Hf-N bonds are not stale at high temperature and easily replaced by oxygen, resulting in significant loss of nitrogen from the bulk film. SiO2 buffer layer introduction at the interface of HfraON and Si substrate may effectively suppress their reaction and control the formation of thicker interfacial layer. But SiO2 is a low k gate dielectric and too thicker SiO2 buffer layer will increase the gate dielectric＇s equivalent oxide thickness. SiON prepared by oxidation of N-implanted Si substrate has thinner physical thickness than SiO2 and is helpful to reduce the gate dielectric＇s equivalent oxide thickness.