Automatic frequency control in a semiconductor laser and an optical amplifier

Automatic frequency control (AFC) in an injection locked or resonant type amplifier in an AlGaAs semiconductor laser was achieved through using the terminal voltage change induced by light injection. Signal-to-noise ratio in the control signal of 10 dB was obtained when the input optical power was -47 dBm and the optical gain Was 51 dB. The AFC was maintained for 3 h with an 0.3-percent output power fluctuation for 2°C ambient temperature change and 65-MHz frequency stability. Step response showed that the system response time was 1.5 s. Sensitivity to input optical power deteriorates at -49 dBm, with a 53-dB locking gain, because of frequency deviation caused by temperature modulation. The second derivative of the induced voltage and it's relation to the optical frequency is constant at5 times 10^{-10}[V/(MHz)²] for all input power levels in a buried-heterostructure (BH)-AlGaAs laser. Terminal voltage change induced by light injection is calculated by simple rate equations with a Gaussian-Halperin-Lax (GHL) bandtail model. Good agreement with experimental results was seen.     

C波段和980 nm抽运的两段级联L波段掺铒光纤放大器

提出了由C波段和传统的 980nmLD两段级联抽运L波段信号的结构 ,C波段的功率和波长由掺铒光纤激光器控制。从实验和理论上分析了注入不同波长和功率的C波段对其增益的影响。设计的掺铒光纤放大器(EDFA)结构 ,在C波段波长为 15 2 5nm ,注入功率为 5mW时 ,功率为 - 2 0dBm ,波长为 15 80nm的信号增益提高了 7 7dB。     

An Experimental 50 Mb/s Fiber Optic PCM Repeater

An experimental repeater for amplification and regeneration of 50 Mb/s fiber-optical pulses has been built and tested. For the receiver either Si p-i-n or avalanche photodiodes are used in conjunction with a high impedance FET input amplifier. The high voltage for the avalanche photodiode is generated internally and controlled by the received signal. This AGC circuit is capable of compensating for temperature changes of the avalanche gain over the range of-40 - +60degC. The optical transmitter consists of either a GaAs light emitting diode or a GaA1As laser diode coupled to optical fibers and directly modulated by a current driver with 30 percent electrical efficiency. For 10^-9error rate, the required average optical signal power for a pseudorandom signal is p-i-n diode: -41.5 dBm; avalanche diode: -56.6 dBm. The optical output power into a fiber with 1 percent index difference is LED: -17 dBm; GaAlAs laser: 0 dBm. The repeater power requirement is about 2 W.     

Capacity of QAM SCM systems utilising optically linearisedMach-Zehnder modulator as transmitter

The limitation imposed by nonlinear distortion and Gaussian noise on the capacity of a subcarrier multiplexed system with quadrature amplitude modulated channels and an optically linearised Mach-Zehnder externally modulated laser transmitter is calculated. A typical system can support 140 6 MHz quadrature phaseshift keying channels (an aggregate bit rate of 1.4 Gbit/s) at 10^-9 bit error rate with a received power of -25 dBm or 300 64-QAM channels (8.9 Gbit/s) with a received power of -15 dBm     

1.3 mu m semiconductor laser power amplifier

The performance of a 3.4-Gb/s system using a low-power 1.318- mu m distributed-feedback (DFB) laser transmitter and a traveling-wave semiconductor laser power amplifier is studied. The -14.5-dBm, input from a directly modulated DFB laser is boosted to +10.3 dBm, of which +4.8 dBm is coupled into the transmission fiber. The penalty, caused by amplifier noise and pattern effects due to gain saturation, is less than 0.5 dB.<>     

Wavelength and power dependence of injected C-band laser on pumpconversion efficiency of L-band EDFA

The effect of wavelength and power of an injected C-band laser on the pump conversion efficiency of a L-band erbium-doped fiber amplifier was studied via numerical simulation and experiment. In the studied C-band wavelength range of 1530-1560 nm, for higher injected power with longer wavelength, the backward output amplified spontaneous emission power is compressed more; but the residual laser power is greater due to the smaller emission coefficient at longer wavelength. Thus there is a best choice for injection wavelength and power. With an injection of -2 dBm at 1550 nm, 4.3 and 2.5 dB of gain enhancement for -12 and -2.6 dBm input at 1586 nm were achieved, respectively     

Amplifier-modulator integrated with a cleaved-coupled-cavity injection laser

We have demonstrated an external amplifier-modulator integrated with a cleaved-coupled-cavity injection laser on the same 1.3 ?m InGaAsP/InP laser chip. The maximum available gain was 20 at an input power of ?19.2 dBm, and it reduced to 10 at an input power of ?10.5 dBm. High on/off extinction ratios and side-mode suppression >100:1 were achieved at about 1 Gbit/s (NRZ) modulation rate.     

Tunable electroabsorption modulated laser integrated with a bent waveguide distributed-feedback laser

The fabrication of the first 1.55-/spl mu/m wavelength tunable electroabsorption modulated laser integrated with a bent waveguide distributed-feedback laser is reported. A low-threshold and stable single-mode operation is obtained when the devices were uniformly pumped. A single-mode output power close to 10 mW from a single-mode fiber (40 mW in free space) is obtained with a 0 V bias to the modulator and an extinction ratio of up to 15 dB at 2.5 V. This single mode stability is due to the continuously distributed phase shift implemented in the structure. With a nonuniform injection, it was possible to select one particular mode out of the three neighboring modes inside the broad-reflection band of the reflector. A tuning range of 3.5 mm was obtained while maintaining an output power of more than 2 dBm from each mode.     

1.06μm注入锁定增益开关半导体激光器特性分析与功率放大研究

报道了1.06 m增益开关半导体激光器的详细特性分析和功率放大研究。用高频正弦信号调制中心波长1.06 m的F-P腔半导体激光器得到脉宽约为100 ps、平均功率约为20 mW,重频从500 MHz到2 GHz连续可调的稳定短脉冲激光输出。采用注入锁定改善增益开关半导体激光器的输出特性。研究和分析了调制信号的频率、功率和偏置电流的大小以及注入锁定的功率、温度对激光器输出特性的影响。将该激光器作为种子,用108 W的抽运光进行两级全光纤功率放大得到了82 W的高功率输出,光光转换效率达到76%。     

增益钳制掺铒光纤放大器特性研究

报道了一种新型基于环形激光腔的增益钳制掺铒光纤放大器。得到了较好的增益钳制效果和增益平坦度,利用980nm半导体激光器泵浦12m长掺铒光纤形成激光增益,观测到 30nm增益带宽。通过反馈1520nm 激光,在可变衰减器不同值测量了输入信号从- 40 ～10dBm的增益,其小信号增益被钳制在16dB。可为40个波分复用(WDM)信道波长提供增益钳制及平坦的放大功能。     

Solid-state laser pumping of 1.5-μm optical amplifiers andsources for lightwave video transmission

An optical power amplifier and a laser source are demonstrated at 1.5 μm. A diode-pumped Nd:YAG laser is used as the pumping source for an Er/Yb co-doped gain medium. The power scaling advantages of this approach are demonstrated. Up to +21 dBm of output power is obtained from the Er/Yb amplifier and up to +19 dBm is obtained from the laser source. The Er/Yb power amplifier was deployed in a 42-channel AM link with 40 km of fiber, and an optical loss budget of 18 dBm was demonstrated     

A 2.5-GHz InGaP/GaAs differential cross-coupled self-oscillating mixer (SOM) IC

This letter presents a monolithic differential cross-coupled self-oscillating mixer (SOM). The SOM chip is fabricated using an InGaP/GaAs heterojunction bipolar transistor (HBT) foundry process and operates at 2.5 GHz. The chip provides voltage controlled oscillator (VCO) operation, up- and down-conversion mixing, and injection locking functionalities. The voltage down-conversion gain and the power up-conversion gain of up to 15 and 11.5 dB, respectively, are measured for the circuit. There is a compromise between obtaining a high conversion gain, and the oscillator power (-0.3 dBm for a 5-V supply) and phase noise (-84 dBc/Hz at 100 kHz). However, phase noise improvement of 32dB is observed by injection of a -30-dBm stable reference.     

A broad-band MQW semiconductor optical amplifier with high saturation output power and low noise figure

A broad-band semiconductor optical amplifier (SOA) that achieves both a high chip saturation output power and a low chip noise figure (NF) was developed by using a thin multiquantum well with low internal loss. The SOA exhibited a high chip saturation output power of >+19.6 dBm and a low chip NF of <4.5 dB over a 3-dB gain bandwidth of 120 nm (1450-1570 nm). For the amplification of optical signals modulated at 40-Gb/s nonreturn-to-zero format, a penalty-free amplification was confirmed up to an average chip output power of +18.1 dBm.     

Injection locking of a 1.3 ?m laser diode to an LiNdP4O12 laser yields narrow linewidth emission

A multi-longitudinal-mode InGaAsP laser diode was injection-locked to a low-power LiNdP4O12 laser operating at 1.319 ?m. A net gain of 24 dB was measured with ?28 dBm of injection power. The beat spectrum between the acousto-optically frequency-shifted LiNdP4O12 laser output and the laser diode output displays a 40 dB carrier to pedestal ratio (in 300 kHz bandwidth) under these conditions.     

High power semiconductor laser injection-locking at 1.3 μm

The injection-locking properties of a high power antireflection coated 1.3-μm slave laser subjected to relatively low injection powers from a distributed feedback (DFB) laser and from a tunable external cavity laser have been investigated. Narrow linewidth operation (~40 kHz) was demonstrated and the tuning range within two slave modes (~10 GHz) and over the gain profile (~40 nm) was investigated. In addition, the tracking properties of the slave laser for both frequency and phase modulated injected light was evaluated at 1 Gb/s, in which the fidelity was judged from bit-error-rate measurements. The maximum locked power under 1 Gb/s frequency modulation was about 145 mW, limited by the available master power; approximately 300 μW was injected into the slave     

Low-power fully integrated and tunable CMOS RF wireless receiver for ISM band consumer applications

A 0.25-/spl mu/m single-chip CMOS single-conversion tunable low intermediate frequency (IF) receiver operated in the 902-928-MHz industrial, scientific, and medical band is proposed. A new 10.7-MHz IF section that contains a limiting amplifier and a frequency modulated/frequency-shift-key demodulator is designed. The frequency to voltage conversion gain of the demodulator is 15 mV/kHz and the dynamic range of the limiting amplifier is around 80 dB. The sensitivity of the IF section including the demodulator and limiting amplifier is -72 dBm. With on-chip tunable components in the low-power low-noise amplifier (LNA) and LC-tank voltage-controlled oscillator circuit, the receiver measures an RF gain of 15 dB at 915 MHz, a sensitivity of -80 dBm at 0.1% bit-error rate, an input referred third-order intercept point of -9 dBm, and a noise figure of 5 dB with a current consumption of 33 mA and a 2450 /spl mu/m/spl times/ 2450 /spl mu/m chip area.     

Towards a coherent optical free-space communication system

A coherent optical communication system based on a diode laser pumped Nd:YAG laser with 620 mW single frequency output power has been developed. Differential phase shift keying at a data rate of 565 Mbit/s has been applied. Bit-error-rates of 10/sup -9/ have been measured at a received light power of -46 dBm.<>     

Optical preamplifier using optical modulation of amplified spontaneous emission in saturated semiconductor optical amplifier

This paper demonstrates a novel optical preamplifier using optical modulation of amplified spontaneous emission (ASE) emitted from a saturated semiconductor optical amplifier (SOA). Requirements on optical alignments and antireflection coating for SOAs can be relaxed and the elimination of an optical filter gives us a large tolerance of an input light wavelength in the proposed optical preamplifier. A small-signal gain of a fabricated preamplifier was over 13.5 dB for an input power of below -20 dBm. An optical gain bandwidth was over 60 nm. We measured the small-signal response of the optically modulated ASE. The 3 dB bandwidths at SOA bias currents of 200, 300, and 400 mA were 5.8, 12.6, and 16.5 GHz, respectively. We also investigated improvements in receiver sensitivities with the proposed optical preamplifier. Our calculation shows a possibility of 10 dB improvement in receiver sensitivities by using the optical preamplifier at 10 Gb/s. The measured receiver sensitivity was -22.7 dBm at 10 Gb/s with the optical preamplifier, which is corresponding to an improvement of 2.5 dB in the receiver sensitivity. Further improvements of the receiver sensitivity can be expected by optimizing the structure of SOAs for saturating ASE.     

Gain dynamics of a saturated semiconductor laser amplifier with 1.47-/spl mu/m LD pumping

The dynamic characteristics of a gain saturated semiconductor laser amplifier with 1.47-/spl mu/m pump light are described. In addition to improving the saturation output power, the pump light injection shortens the gain response time. Bit-error-rate measurements show that signal degradation, induced for a high-bit-rate signal amplified under the gain saturated condition, becomes less with the pump light injection.     

Long-wavelength monolithic GaInNAs vertical-cavity optical amplifiers

We report on the continuous-wave amplification characteristics of an optically pumped 1.3-/spl mu/m multiple-quantum-well GaInNAs-GaAs vertical-cavity semiconductor optical amplifier (VCSOA). The VCSOA structure was monolithically grown by molecular beam epitaxy and operated in reflection mode in a fiber-coupled system. The maximum on-chip gain attained, limited by the onset of laser action, was 15.6 dB at 196 mW of 980-nm pump power. For a chip gain of 10.4 dB, the optical bandwidth was 10.8 GHz and the saturation output power was -9 dBm. By varying the pump laser power, a maximum extinction ratio of 22.3 dB was obtained. Temperature-controlled tuneable operation of the device is also presented and demonstration of 9 dB of chip gain obtained over 9.5 nm with an optical bandwidth of 12 GHz is reported.