基板温度对SnO2:Sb薄膜结构和性能的影响

以单丁基三氯化锡(MBTC)和 SbCl3 为反应原料,采用常压化学气相沉积法(APCVD 法)在不同的基板温度下制备 Sb 掺杂 SnO2 薄膜,用 XRD、SEM表征了薄膜的结构和形貌,通过测量薄膜的方块电阻、载流子浓度、霍尔(Hall)系数、紫外可见光谱等性质,详细研究了基板温度对薄膜结构和光电性能的影响。实验表明 550℃以上制备的样品为多晶薄膜,并保持四方相金红石型结构;在 650℃下沉积的薄膜具有最低的方块电阻值,为 72Ω/□;在可见光区域薄膜透射率和反射率随着基板温度的提高均有所下降。     

衬底温度对磁控溅射制备外延ZnO薄膜结构特性的影响

在不同的衬底温度下,采用磁控溅射方法在蓝宝石(0001)衬底上制备了外延生长的ZnO薄膜.采用原子力显微镜(AFM)、X射线衍射仪(XRD)、可见-紫外分光光度计系统研究了衬底温度对ZnO薄膜微观结构和光学特性的影响.AFM结果表明在不同村底温度制备的ZnO薄膜具有较为均匀的ZnO晶粒,且晶粒的尺寸随衬底温度的增加逐渐增大.XRD结果显示不同温度生长的ZnO薄膜均为外延生长,400℃生长的薄膜具有最好的结晶质量;光学透射谱显示在370nm附近均出现一个较陡的吸收边,表明制备的ZnO薄膜具有较高的质量,其光学能带隙随着衬底温度的增加而减小.     

Influence of SHI irradiation on the structure and surface topography of CdTe thin films on flexible substrate

Impact of ion irradiation on thin films is an emerging area for materials modification. CdTe thin films grown by thermal evaporation on flexible molybdenum (Mo) substrate were irradiated with Swift (100 MeV) Ag⁺⁷ ions for various ion fluence in the range 10¹²–10¹³ ions/cm². The modifications in the composition, structure and surface morphology have been studied as a function of ion fluence. The Energy Dispersive X-ray Analysis (EDS) shows slightly Te-rich composition for both as-grown and irradiated films with no significant change after irradiation. X-ray diffraction (XRD) analysis indicates a consistent shift in the (111) peak position towards higher diffraction angle and an increase in the full width at half maximum (FWHM) with increase in ion fluence. The change in the residual stress during irradiation has been evaluated and is related to the corresponding microstructural changes in the films. The initial tensile stress is found to be relaxed after irradiation. Atomic Force Microscopy (AFM) studies revealed significant grain splitting after irradiation and formation of hillocks at higher ion fluence. The surface roughness was significantly increased at higher ion fluence.     

Effects of substrate temperature and substrate material on the structure of reactively sputtered TiN films

Stoichiometric TiN films were reactively magnetron sputtered in an Ar-N₂ atmosphere. The films were deposited at various substrate temperatures in the range 200–650°C onto two types of substrate material, high speed steel and stainless steel. The microstructure of the films obtained was investigated by the use of a transmission electron microscope and the morphology was studied in a scanning electron microscope. Measurements of the hardness were also performed. The analysis of the microstructure shows that the growth of the film is markedly influenced by the substrate material. In particular, the high speed steel substrates were found to have a considerable influence on the microstructure. The vanadium carbide particles in these steels, which have a good lattice match to TiN, stimulate a localized epitaxial growth to occur on these carbide particles. This results in a microstructure consisting of large grains surrounded by small grains. The shape of the large grains is influenced by the temperature. In the development of these large grains cracks and/or voids occur in and around the grains at substrate temperatures above 400°C and the hardness drops by about 20%. No large grains were found on films deposited onto stainless steel and their hardness increases slightly with temperature. High hardness for films deposited onto the high speed steel substrate at temperatures above 400°C can also be obtained if a substrate bias is used. Ion bombardment during film growth suppresses the formation of the large grains with voided or cracked boundaries because of a continuous renucleation process. The formation of the different microstructures is discussed in terms of surface energy minimization and thermally activated processes as surface and grain boundary migration.     

Influence of deposition conditions and substrate structure on the structure of sputtered tellurium films

A study has been made of the growth of tellurium films sputtered onto four substrate materials (cover glass, spinel, quartz and alumina), unheated as well as heated to 100°, 150°, 200° and 250°C. It was found that the structure of the substrate exerted no measurable influence on the structure of the films. However, sputtering conditions do influence the preferred orientation. Tellurium films sputtered onto unheated substrates have a preferred orientation of the (100) type (i.e. with the (100) planes parallel to the substrate). Those on heated substrates show a preferred orientation of the (101) type. Furthermore, thickness is an important factor. Tellurium films with thickness less than 6000 Å have a (100)-type preferred orientation, but thicker films have a (101) orientation. All the observations can be explained in terms of recrystallization taking place during deposition due to heating of the film.     

Influence of substrate temperature and film thickness on the structure of reactively evaporated In2O3 films

Indium oxide films 25–550 Å thick were reactively evaporated at an oxygen pressure of about 0.27 Pa and at a substrate temperature between room temperature and 400°C. The dependence of the structure of the films on the substrate temperature and on the film thickness was studied using transmission electron microscopy and electron diffraction. It was found that thick films (about 550 Å) were amorphous at room temperature, partially crystallized at 50–125°C and crystalline at 150–400°C. The crystallinity of the films deposited at 150–250°C also depended markedly on the film thickness. Very thin films about 25 Å thick were quasi-amorphous, but with increasing film thickness the amorphous phase transformed into a crystalline phase.The thermal transformation of the amorphous films after deposition was also studied. Amorphous films about 550 Å thick deposited at room temperature and 100°C crystallized at 230°C and 210°C respectively.     

基片表面粗糙度对坡莫合金AMR以及磁性能的影响

利用霍尔离子源轰击Si基片获得了不同表面粗糙度的基片,然后利用磁控溅射方法制备了一系列Ta(5nm)/Ni 80Fe 20(12nm)/Ta(2nm)薄膜样品,重点研究了基片表面粗糙度对薄膜结构和各向异性磁阻效应的影响。采用AFM测量基片的表面粗糙度,采用四探针法测量薄膜的各向异性磁阻效应。研究结果表明,随着基片表面粗糙度的增加,坡莫合金的AMR值显著降低,且ΔH显著增加。     

Electrical properties of polycrystalline Sb2Te3 films

Single-phase polycrystalline stoichiometric films of Sb₂Te₃ with different thicknesses were prepared on glass substrates by a flash evaporation technique at constant substrate temperature of 423 K. The electrical properties of these films, such as resistivity, Hall mobility, carrier concentration and activation energy, were determined for different film thicknesses. The optical absorption of these films was also studied. The implications are discussed.     

Preparation and properties of CdSb thin films

CdSb films with various composition were prepared by the two-source vacuum deposition method. Crystallization of the films was investigated for the various evaporating conditions, and electrical properties such as conductivity, Hall mobility and Seebeck coefficient were measured using as-deposited and annealed films with various Cd contents. The films with 10–25% Cd content (weight %) were amorphous of a low conductivity and large Seebeck coefficient. Crystalline state of CdSb appeared at the Cd content of above 30%. Annealing of amorphous films had a remarkable effect on those properties, while crystalline films had little effect.     

Influence of the substrate temperature on the properties of MoSi2 thin films

Investigations of the microcrystalline structure of sputtered MoSi₂ thin films deposited at temperatures in the range 60–500 °C are described. At low temperatures the films are amorphous, and in the higher range of temperature hexagonal MoSi₂ is detected. Annealing the films at 960 °C to form the low resistivity tetragonal MoSi₂ phase results in different grain sizes depending on the substrate temperature during deposition.     

退火温度对Bi0.5Sb1.5Te3薄膜的微结构及热电性能的影响

采用瞬间蒸发技术沉积了厚度为800 nm的P型Bi0.5Sb1.5Te3热电薄膜,并在373 K-573 K进行1小时的真空退火处理.利用X射线衍射(XRD)、场发射扫描电子显微镜(FESEM)和能量散射谱(EDS)分别对薄膜的物相结构、表面形貌以及化学计量比进行表征.研究了退火温度对Bi0.5Sb1.5Te3薄膜的电...     

Influence of substrate temperature on phase formation in Al-Cr thin films

Thin films (of the order of nm) of Al-Cr alloys were prepared by successive depositions by an electron gun in a vacuum chamber. Three Al and two Cr layers, of thicknesses as to yield the final composition, were deposited on both hot (350 °C and 440 °C) and cold (70 °C and 108 °C) substrates and the phases formed were characterized in each case by X-ray diffraction and TEM observations, both in bright and in dark field conditions. The results show that on the hot substrates, Bragg peaks that do not correspond to any reported crystalline or quasi-crystalline phase appear. Both the samples on cold substrates and those heated afterwards showed an amorphous structure by X-ray diffractomery but TEM demonstrated the presence of tiny faulted crystallites, with the same Bragg reflections than those deposited on hot substrates. The results show that, for the composition range studied, a new phase not reported before appears and the substrate temperature only produces crystallite growth, not the formation of new phases. Received: 26 May 2000 / Reviewed and accepted: 31 May 2000     

Influence of the surface roughness on the properties of Au films measured by surface plasmon resonance and X-ray reflectometry

Thickness and refractive index of Au films thermally evaporated onto glass substrates and with an underlayer of Cr are determined from surface plasmon resonance. The results for the thickness are found to agree very well with those from X-ray reflectivity when a simple model of layers with flat interfaces is used. Plasmon propagation along thin films is influenced by radiative damping due to scattering from surface roughness. To study this influence the surface roughness of the glass substrate, Cr an Au layers are measured by X-ray reflectometry and the results used to introduce three intermediate layers with effective refractive indices and thicknesses corresponding to the roughness. Then Fresnel's equations are used to fit the reflectivity and to deduce the layer properties. It is found that the roughness affects to a great extent the optical parameters of the Au films even when it is smaller than 1 nm. In particular, the absolute value of real part of the dielectric constant decreases while its imaginary part increases when those effects are not taken into account.     

Influence of substrate temperature and bias voltage on the optical transmittance of TiN films

Titanium nitride (TiN) thin films were prepared by means of reactive DC sputtering on quartz and sapphire substrates. Structural, electrical and optical effects of deposition parameters such as thickness, substrate temperature, substrate bias voltage were studied. The effect of substrate temperature variations in the 100-300°C range and substrate bias voltage variations in the 0-200 V DC range for 45-180 nm thick TiN films were investigated. Temperature-dependent electrical resistivity in the 100-350 K range and optical transmission in the 300-1500 nm range were measured for the samples. In addition, structural and morphological properties were studied by means of XRD and STM techniques.The smoothest surface and the lowest electrical resistivity was recorded for the optimal samples that were biased at about V_s=−120 V DC. Unbiased films exhibited a narrow optical transmission window between 300 and 600 nm. However, the transmission became much greater with increasing bias voltage for the same substrate temperature. Furthermore, it was found that lower substrate temperatures produced optically more transparent films.Application of single layers of MgF₂ antireflecting coating on optimally prepared TiN films helped increase the optical transmission in the visible region to more than 40% for 45 nm thick samples.     

Influence of substrate temperature on the electrical and optical properties of amorphous germanium films

The influence of substrate temperature on electrical and optical properties of the amorphous germanium films deposited under well-defined conditions has been investigated. DC electrical conductivity in the temperature range of 80–573°K has been measured. In the low temperature region Mott’sT ^−1/4 law of conductivity is obeyed. The estimated values ofT ₀ andN show significant decrease with change inT _s in steps of 50°K. Similar results are seen in annealed films. The values of activation energy and optical energy increase withT _s.     

Thickness and temperature effects on electrical resistivity of (Bi0.5Sb0.5)2Te3 thin films

Thin films of (Bi_0.5Sb_0.5)₂Te₃ of different thickness were deposited on glass substrate by the flash evaporation method in a vacuum of 1 × 10^− 5 Torr. X-ray diffraction and transmission electron microscope analysis indicates that these films are polycrystalline even in the as-deposited state and the post-deposition annealing leads to grain growth. Electrical resistivity studies were carried out on these films as a function of temperature (300– 450 K) and film thickness (450–2000 Å). Temperature dependence of electrical resistivity shows that (Bi_0.5Sb_0.5)₂Te₃ films are semiconducting. It is found that electrical conduction activation energy decreases with increase of film thickness and this observation is explained based on the Slater model. Thickness dependence of electrical resistivity is analyzed using the effective mean free path model of size effect with perfect diffuse scattering. This analysis leads to the evaluation of the important physical parameters i.e., mean free path and bulk resistivity of hypothetical bulk.