Cs-Ar混合蒸气中6P3/2激发态的空间分布和辐射陷获

计算和测量了Cs-Ar混合蒸气中Cs(6P3/2)共振能级的有效辐射率。使用单模半导体激光器(泵浦激光)将Cs原子激发至6P3/2态,另一调谐到6P3/2→8S1/2的单模激光束(检测激光)与泵浦束反平行通过样品池,并在池的直径方向平行移动,通过对检测激光束的吸收测定了激发态原子密度及其空间分布。由于辐射陷获存在,有效辐射率是自然辐射率与透射因子(发射的光子在探测区域内没有被吸收的平均概率)的乘积。6P3/2原子密度及其空间分布结合6P3/2←6S1/2跃迁线的碰撞增宽计算了透射因子,从而得到了不同Ar气压下,Cs D2线的有效辐射率。从6P3/2→6S1/2跃迁线强度I852的测量,得到了不同Ar气压下有效辐射率的比值与理论计算得到的比值相符。     

Rb蒸汽中5S1/2→5P3/2激光激发的速度选择粒子数密度和饱和效应

利用一步激发的饱和吸收光谱技术测量了激发态Rb(5P3/2)态的原子密度,在激光线宽远小于Doppler线宽条件下。在激光功率40μW至5mW的范围内,测量了吸收系数,得到了5P3/2态的速度选择布居数密度。通过Rb空心阴极灯发出的5D→5P3/2窄谱线的吸收测量,也可以测得5P3/2态的原子密度,二种测量方法所得结果符合得很好。约2%基态原子被单模半导体激光器激发到5P3/2态。     

Rb-H_2混合蒸气中5S_(1/2)→5P_(3/2)激光激发的速度选择布居与饱和效应

利用一步激发的饱和吸收光谱技术测量了激发态Rb(5P<,3/2)态的原子密度,室温下的Rb-H<,2混合蒸气被780nm激光激发,在激光线宽远小于Doppler线宽条件下,在激光功率40μW至5mw的范围内,测量了吸收系数,得到了5P<,3/2态的速度选择布居数密度.通过Rb空心阴极灯发出的5D→5P<,3/2窄谱线的吸收测量,也可以测得5P<,3/2态的原子密度,二种测量方法所得结果符合得很好.当氢气压为100Pa时,约8%基态原子被单模半导体激光器激发到5P<,3/2态.     

Rb(5PJ)与Ne、N2碰撞诱导激发能量转移

在气体样品池条件下,研究了Rb(5PJ) (Ne、N2)碰撞能量转移过程.用调频半导体激光器激发Rb原子至Rb(5P3/2)态,在不同的Ne或N2气压下,测量了直接5P3/2→5S1/2荧光和转移5P1/2→5S1/2荧光.对于5PJ与Ne的碰撞,电子态能量仅能转移为Ne原子的平动能.在与N2的碰撞中,向分子振转态的转移是重要的.利用速率方程分析,可以得到碰撞转移速率系数,对于Ne,5P3/2→5S1/2转移速率系数为1.53×10-12cm3s-1.对于N2,测量5PJ Ne和5PJ N2二种情况下荧光的相对强度比,利用最小二乘法确定5P3/2→5S1/2转移速率系数为1.05×10-10cm3s-1,5PJ态猝灭速率系数为1.12×10-10cm3s-1.与其他实验结果进行了比较.     

Dry etching of new phase-change material Al_(1.3)Sb_3Te in CF_4/Ar plasma

正The dry etching characteristic of Al_(1.3)Sb_3Te film was investigated by using a CF_4/Ar gas mixture.The experimental control parameters were gas flow rate into the chamber,CF_4/Ar ratio,the O_2 addition,the chamber background pressure,and the incident RF power applied to the lower electrode.The total flow rate was 50 sccm and the behavior of etch rate of Al_(1.3)Sb_3Te thin films was investigated as a function of the CF_4/Ar ratio,the O_2 addition,the chamber background pressure,and the incident RF power.Then the parameters were optimized.The fast etch rate was up to 70.8 nm/min and a smooth surface was achieved using optimized etching parameters of CF_4 concentration of 4%,power of 300 W and pressure of 80 mTorr.     

Model‐Based Analysis of the ZrO2 Etching Mechanism in Inductively Coupled BCl3/Ar and BCl3/CHF3/Ar Plasmas

The etching mechanism of ZrO₂ thin films and etch selectivity over some materials in both BCl₃/Ar and BCl3/CHF3/Ar plasmas are investigated using a combination of experimental and modeling methods. To obtain the data on plasma composition and fluxes of active species, global (0‐dimensional) plasma models are developed with Langmuir probe diagnostics data. In BCl3/Ar plasma, changes in gas mixing ratio result in nonlinear changes of both densities and fluxes for Cl, BCl2, and BCl2⁺. In this work, it is shown that the nonmonotonic behavior of the ZrO2 etch rate as a function of the BCl3/Ar mixing ratio could be related to the ion‐assisted etch mechanism and the ion‐flux‐limited etch regime. The addition of up to 33% CHF₃ to the BCl₃‐rich BCl3/Ar plasma does not influence the ZrO2 etch rate, but it non‐monotonically changes the etch rates of both Si and SiO2. The last effect can probably be associated with the corresponding behavior of the F atom density.     

超薄Si3N4/SiO2（N/O）stack栅介质及器件

成功制备了EOT(equivalent oxide thickness)为2.1nm的Si3N4/SiO2(N/O) stack栅介质,并对其性质进行了研究．结果表明，同样EOT的Si3N4/SiO2 stack栅介质和纯SiO2栅介质比较，前者在栅隧穿漏电流、抗SILC性能、栅介质寿命等方面都远优于后者．在此基础上,采用Si3N4/SiO2 stack栅介质制备出性能优良的栅长为0.12μｍ的CMOS器件，器件很好地抑制了短沟道效应．在Vds=Vgs=±1.5V下，nMOSFET和pMOSFET对应的饱和电流Ion分别为584.3μA/μｍ和－281.3μA/μｍ，对应Ioff分别是8.3nA/μｍ和－1.3nA/μｍ．     

锂离子电池正极材料LiNi_(1/3)Co_(1/3)Mn_(1/3)O_2的合成及性能研究

采用辐照凝胶法制备了锂离子电池正极用LiNi1/3Co1/3Mn1/3O2粉体材料。采用XRD、SEM和电化学充放电测试对制备材料的结构和性能进行了表征。结果表明:900℃制得的样品具有较好的层状结构,结晶性适中,电化学性能优异:其首次放电容量高达184mA·h/g(2.80～4.50V,C/10),30次循环后的容量保持率为87.4%,表现出较好的充放电容量和循环性能,较之850,950℃煅烧样品具有最小的交流阻抗和直流阻抗。     

Al2(WO4)3的激光烧结合成及特性

采用激光烧结技术快速成功地将比例适当的Al2O3和WO3粉末合成了形貌良好且致密的Al2(WO4)3材料,并对该材料采用多种分析手段进行了分析。 拉曼光谱分析说明在合适工艺参数下激光烧结可避免原料挥发，使原料完全参与反应。X射线衍射(XRD)分析表明合成物主要是Al2(WO4)3，属空间群Pnca，具有正交结构，可能显示负热膨胀特性，另外还含有少量的AlxWO3(x≤1)和WO3-x(x<1)。扫描电镜(SEM)发现合成物晶粒呈球形、细小、排列致密、少有气孔、尺寸约在10 nm左右。能量散射光谱(EDS)分析显示合成物内部成分分布均匀。热分析则得出合成物中少许杂相为复杂非平衡相。     

电场激活压力辅助烧结对(Bi2Te3)0.2(Sb2Te3)0.8热电材料微观结构及热电性能的影响

采用电场激活压力辅助烧结（FAPAS）技术制备了(Bi2Te3)0.2(Sb2Te3)0.8热电材料,采用无电场、低电场强度和高电场强度三种烧结方式作为对比实验,研究了烧结过程中施加电场强度对(Bi2Te3)0.2(Sb2Te3)0.8热电材料微观结构和热电性能的影响。研究结果表明,在烧结过程中施加电场,可明显提高(Bi2Te3)0.2(Sb2Te3)0.8热电材料的电导率和Seebeck系数,从而提高其综合电功率因子;而采用大电场强度烧结则会使(Bi2Te3)0.2(Sb2Te3)0.8材料出现层状结构择优取向,在电性能相对较高的情况下亦使其热导率明显减低,从而获得较高ZT值。     

Effect of current on the microstructure and performance of (Bi_2Te_3)_(0.2)(Sb_2Te_3)_(0.8) thermoelectric material via field activated and pressure assisted sintering

(Bi_2Te_3)_(0.2)(Sb_2Te_3)_(0.8) thermoelectric material was sintered via a field activated and pressure assisted sintering(FAPAS) process.By applying different current intensity(0,60,320 A/cm~2) in the sintering process,the effects of electric current on the microstructure and thermoelectric performance were investigated.This demonstrated that the application of electric current in the sintering process could significantly improve the uniformity and density of(Bi_2Te_3)_(0.2)(Sb_2Te_3)_(0.8) samples.Whe...