Synthesis of (Ba<Subscript>1−x</Subscript>Sr<Subscript>x</Subscript>)(Ti<Subscript>0.5</Subscript>Zr<Subscript>0.5</Subscript>)O<Subscript>3</Subscript> ceramics and effect of Sr content on room temperature dielectric properties

The compositions in the system (Ba_1−x Sr _x )(Ti_0.5Zr_0.5)O₃ with different Sr (x) content, were synthesized through solid oxide reaction route. The phase formation behaviors in the system were investigated by XRD. The room temperature dielectric properties of the compositions were investigated in the frequency range 10 Hz to 13 MHz. The solid solution system Ba_1−x Sr _x Ti_0.5Zr_0.5O₃ remains as cubic perovskite up to x < 0.6 and transforms into the tetragonal structure above x > 0.6. Composition with x = 0.6 contains a mixture of cubic and tetragonal phases with broadened diffraction pattern. It is observed that the increasing of Sr substitution results in the decreasing of bulk density, average grain size and dielectric constants etc. in the composition system. The AC dielectric conductivity of the ceramics also decreases with the increase in Sr-substitution due to decrease in loss as well as grain size with that substitution.     

Dielectric properties and defect mechanisms of (1-<Emphasis Type="Italic">x</Emphasis>)Ba(Fe<Subscript>0.5</Subscript>Nb<Subscript>0.5</Subscript>)O<Subscript>3</Subscript> -<Emphasis Type="Italic">x</Emphasis>BiYbO<Subscript>3</Subscript> ceramics

(1-x)Ba(Fe_0.5Nb_0.5)O₃ -xBiYbO₃ (BFN-xBY) ceramics were prepared by a conventional solid-state reaction method. The dielectric properties and relaxation behavior of BFN-xBY ceramics were analyzed according to dielectric and impedance spectroscopy. Dielectric permittivity of the ceramics increases with increasing temperature below 500 K then remains unchanged up to 700 K, while corresponding loss factor decreases with the increase of temperature below 500 K then increase slowly. Defect compensation mechanism of this system was analyzed in detail. The giant dielectric behavior of the ceramics arises from the internal barrier layer capacitor (IBLC) effect. Polarization effect at insulating grain boundaries between semiconducting grains accompanied by a strong Maxwell-Wagner (MW) relaxation mode. The characteristic of grain boundaries was revealed using impedance spectroscope and the universal dielectric response law.     

Microwave dielectric properties of Na<Superscript>+</Superscript> and M<Superscript>3+</Superscript>-doped Ba(Mg<Subscript>0.5</Subscript>W<Subscript>0.5</Subscript>)O<Subscript>3</Subscript> ceramics

In this study, phase evolution, microstructure, and microwave dielectric properties of (Ba_0.98Na_0.02)(Mg_0.48M³⁺_0.02W_0.5)O₃ (M³⁺?=?Al, Ga, Sc, In, Yb, Y, Dy, Gd, and Sm) ceramics sintered at 1700 °C for 1 h were investigated. All the compounds exhibited an ordered cubic perovskite structure. Regardless of the ionic radius of the doped M³⁺ ions, BaWO₄ was detected as the secondary phase in all the compounds. The field emission scanning electron microscopy (FE-SEM) images revealed a dense microstructure in all the compounds, except in the Al-doped compound, which exhibited an insufficient grain growth. The large and irregularly shaped grains indicated that the liquid phase sintering occurred. Splitting of the A_1g(O) mode was observed in the Raman spectra of large M³⁺ ion-doped compounds. Splitting of the F_2g modes did not occur and the bands were sharp, indicating that the cubic symmetry was retained. As the ionic radius of the doped M³⁺ ions increased, the dielectric constant (ε_r) increased slightly. The compounds doped with M³⁺?=?Sc, In, Yb, and Y exhibited a very high quality factor (Q?×?f₀) in the range of 250,000 ~ 280,000 GHz. In the case of the compounds doped with M³⁺?=?Al, Ga, Sc, In, Yb, Y, and Dy, the value of the temperature coefficient of resonant frequency (τ_f) was in the range of ?24 ~ ?19 ppm/°C, while the Gd and Sm-doped compounds exhibited positive values of 2.8 and 31.2 ppm/°C, respectively. The dielectric constant, quality factor, and temperature coefficient of resonant frequency of the In-doped compound, i.e., (Ba_0.98Na_0.02)(Mg_0.48In_0.02W_0.5)O₃, were 18.7, 286,557 GHz, and???24.4 ppm/°C, respectively.     

Studies of structural,dielectric and impedance properties of Bi<Subscript>9</Subscript>Fe<Subscript>5</Subscript>Ti<Subscript>3</Subscript>O<Subscript>27</Subscript> ceramics

Bi₉Fe₅Ti₃O₂₇ is an eight-layered material belonging to the family of bismuth layered structured ferroelectromagnets. The polycrystalline sample of this compound was prepared by a standard solid-state reaction technique. The formation of the compound in an orthorhombic crystal structure was confirmed by an X-ray diffraction (XRD) technique (lattice parameters: a?=?5.5045[27] Å, b?=?5.6104[27] Å, c?=?76.3727[27] Å). Detailed studies of surface morphology of the compound using scanning electron microscopy (SEM) exhibit that the compound has domains of plate shaped grains. Studies of dielectric and electric properties in a wide temperature range (30–500 °C) at different frequencies (100 Hz–1 MHz) exhibit an anomaly at 291?±?2 °C, which is related to ferroelectric to paraelectric phase transition as suggested by hysteresis loop at room temperature. The values and nature of temperature variation of dc conductivity exhibit the NTCR behavior of the compound.     

Tunable Dielectric Characteristics of 0.9Pb(Fe<Subscript>1/2</Subscript>Nb<Subscript>1/2</Subscript>)O<Subscript>3</Subscript>/0.1CaTiO<Subscript>3</Subscript>

Tunable dielectric characteristics of 0.9Pb(Fe_1/2Nb_1/2)O₃/0.1CaTiO₃ relaxor ferroelectric ceramics were investigated as the function of DC bias field and temperature. High tunability (more than 20%) was obtained in the present ceramics under a relatively weak DC bias field (1.4 kV/cm). The value of tunability changed from negative to positive with increasing DC field. For the simulation of the dielectric constant under DC bias field, modified model needs to be constructed for the relaxor ferroelectrics. The dielectric constant curve as a function of temperature without and under DC field was well fitted using the equation of diffuse phase transition. The lower ε_max, higher T_max and higher diffuseness parameter under DC field were observed and only the lower ε_max contributed to positive tunability.     

Structure and properties of Bi<Subscript>2</Subscript>O<Subscript>3</Subscript> doped Bi(Mg<Subscript>1/2</Subscript>Ti<Subscript>1/2</Subscript>)O<Subscript>3</Subscript>-0.38PbTiO<Subscript>3</Subscript> ceramics with MPB composition

0.62Bi(Mg_1/2Ti_1/2)O₃-0.38PbTiO₃-xwt%Bi₂O₃ (BMT-0.38PT-xBi₂O₃) ceramics were prepared by conventional powder-processing method. It indicated that the morphotropic phase boundary (MPB) region located in 0.0?≤?x?≤?0.3. For x?=?0.3, it exhibited good piezoelectric properties, d₃₃ ~245pC/N and k_p ~40 %. With the increase of Bi₂O₃ content, the Curie temperature (T_c) was found to increase, and the dielectric loss was found to decrease above 200 °C compared with BMT-0.38PT sample. Finally, it can be found that depolarization temperature was around 350 °C by thermal depoling method.     

Lead-free (K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>)<Subscript>0.95</Subscript>(LiSb)<Subscript>0.05</Subscript>Nb<Subscript>0.95</Subscript>O<Subscript>3</Subscript>-BaTiO<Subscript>3</Subscript> piezoceramics

Lead-free (1-x)(K_0.5Na_0.5)_0.95(LiSb)_0.05Nb_0.95O₃-xBaTiO₃ (abbreviated as (1-x)KNNLS-xBT) piezoceramics were synthesized by conventional solid state sintering and the effect of BaTiO₃ on the microstructure, dielectric and piezoelectric properties was investigated. It was found that both orthorhombic-tetragonal (T _O-T) and tetragonal-cubic (T _C) phase transition temperatures decreased obviously with increasing BaTiO₃ content. Although proper amount of BaTiO₃ facilitated the sintering of (1-x)KNNLS-xBT ceramics, the addition of BaTiO₃ affected the relaxor behavior slightly and it was not beneficial to improve piezoelectric strain coefficient d ₃₃, remnant polarization P _r and piezoelectric coupling constant k _p.     

Influence of the processing rates and sintering temperatures on the dielectric properties of CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript> ceramics

The stoichiometric CaCu₃Ti₄O₁₂ pellets were prepared by the solid state synthesis. X-ray diffraction data revealed the tenorite CuO and cuprite Cu₂O secondary phases on the unpolished CaCu₃Ti₄O₁₂ samples regardless of the heating rates. Also, the dielectric constant marked the highest for the CaCu₃Ti₄O₁₂ sample sintered at the lowest heating rate (1°C/min), which was explained by the increased grain conductivity due to the cation reactions. On the other hand, Cu₂O phase was found only on the unpolished CaCu₃Ti₄O₁₂ sample sintered over 1100°C and those are considered as the remains reduced from the CuO phase. The higher sintering temperature showed the increased dielectric constant and the loss tangent of the CaCu₃Ti₄O₁₂ samples, and this result could be interpreted by the impedance measurement data. The relationship between the processing condition and the dielectric properties was discussed in terms of the cation non-stoichiometry and the defect chemistry in CaCu₃Ti₄O₁₂.     

Phase transition,microstructure and properties of (Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>)<Subscript>1-x</Subscript>Ba<Subscript>x</Subscript>TiO<Subscript>3</Subscript> lead-free piezoelectric ceramics

In this article, (Na_0.5Bi_0.5)_1-xBa_xTiO₃ lead-free piezoelectric ceramics were prepared by solid-state reaction. The influence of Ba contents on phase structures, compositional distribution and electrical properties of (Na_0.5Bi_0.5)_1-xBa_xTiO₃ ceramics were systematically investigated to further understand the nature of phase transition. It was found that the phase structure of (Na_0.5Bi_0.5)_1-xBa_xTiO₃ transforms from rhombohedral to tetragonal symmetry at x = 0.06 ~ 0.07 and Ba²⁺ segregation forms the coexistence of Ba-rich tetragonal and Ba-deficient rhombohedral phases close to MPB. The electrical properties of prepared samples regularly changed with Ba content, which is closely related to the distribution of rhombohedral and tetragonal phases. The prepared sample near MPB exhibited the largest dielectric constant and the excellent piezoelectric properties (the maximal measuring field reached 78 kV/cm and the piezoelectric constant d ₃₃ = 151pC/N).     

Site Preference of La in Bi<Subscript>3.75</Subscript>La<Subscript>0.25</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> Using Neutron Powder Diffraction and Raman Scattering

Both structural refinement using neutron powder diffraction data and Raman scattering were carried out to determine the site preference of La atoms and the cation distribution in Bi_3.75La_0.25Ti₃O₁₂ compound. Of three possible cation-disorder models, the best structural refinement result was obtained from a model that La atoms substitute only for Bi atoms outside of the TiO₆ octahedra in the Bi₂Ti₃O₁₀ unit. The model proposed by the structural refinement was corroborated by the Raman spectroscopic study. The final weighted R-factor, R_wp, and the goodness-of-fit indicator, S (= R_wp/R_e), based on the neutron diffraction and the Raman scattering were 4.12% and 1.43, respectively. The occupancy of La atoms for two Bi sites in the perovskite-like unit was 0.082 and 0.074, respectively. The refined model described a structure in monoclinic space group B1a1 with Z = 4, a = 5.4387(1) Å, b = 5.4129(1) Å, c = 32.8441(1) Å and = 90.03(1).     

Dielectric properties of pure and Mn-doped CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript> ceramics over a wide temperature range

The effect of manganese doping on the dielectric properties of CaCu₃Ti_4-xMn_xO₁₂ (x?=?0, 0.02, 0.04) were investigated over a broad temperature range (93–723 K) in the frequency range from 100 Hz to 10 MHz. Two dielectric relaxations and two dielectric anomalies were observed. The low-temperature relaxation appearing in the temperature range below 200 K is the characteristic relaxation for CaCu₃Ti₄O₁₂. This relaxation was attributed to the polaron relaxation due to electron hopping between Ti³⁺ and Ti⁴⁺ states. Due to the negative factors of notable decreases in the Ti³⁺/Ti⁴⁺ and Cu³⁺/Cu²⁺ ratios and the concentration of oxygen vacancies as revealed by X-ray photoemission spectroscopy, Mn-doping was found to gradually destroy rather than move this relaxation to a higher temperature. The high-temperature relaxation occurring around room temperature was found to be a Maxwell-Wagner relaxation caused by grain boundaries. Our results confirm that the colossal dielectric behavior in the tested samples results from both polaron and Maxwell-Wagner relaxations, but is predominated by the latter relaxation. The low-temperature anomaly behaves as a phase-transition-like behavior. It was argued to be created by oxygen vacancies transition from static disorder to dynamic disorder. The high-temperature anomaly is an artificial effect caused by negative capacitance.     

Effects of MnO<Subscript>2</Subscript> addition on microstructure and electrical properties of (Bi<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>) <Subscript>0.94</Subscript>Ba<Subscript>0.06</Subscript>TiO<Subscript>3</Subscript> ceramics

In this letter, MnO₂-doped (Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ (BNBT-6) lead-free piezoelectric ceramics were synthesized by solid state reaction, and the microstructure and electrical properties of the ceramics were investigated. X-ray diffraction (XRD) reveals that all specimens take on single perovskite type structure, and the diffraction peaks shift to a large angle as the MnO₂ addition increases. Scanning electron microscopy shows that the grain sizes increases, and then decreases with increasing the MnO₂ content. The experiment results indicate that the electrical properties of ceramics are significantly influenced by the MnO₂ content, and the ceramics with homogeneous microstructure and excellent electrical properties are obtained with addition of 0.3 wt% MnO₂ and sintered at 1160°C. The piezoelectric constant (d₃₃), the electromechanical coupling factor (k _p ), the dissipation factor (tan δ) and the dielectric constant (ɛ _r ) reach 160 pC/N, 0.29, 0.026 and 879, respectively. These excellent properties indicate that the MnO₂-doped BNBT-6 ceramics can be used for actuators.     

Raman and infrared spectroscopy of Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript> - BaTiO<Subscript>3</Subscript> ceramics

Lead-free Na_0.5Bi_0.5TiO₃ -BaTiO₃ ceramics have been prepared in the whole range of concentrations and studied at room-temperature by means of X-ray, Raman scattering and infrared techniques. X-ray measurements revealed rhombohedral, rhombohedral-tetragonal boundaries and tetragonal modifacations depending on the contents of BaTiO₃. The distinct changes of the Raman and infrared spectra with increasing of BaTiO₃ content, which were correlated with X-ray results, were observed. The broad phonon spectra indicated the disorder in the A site of Na_0.5Bi_0.5TiO₃ -BaTiO₃ system.     

Structural,dielectric and magnetic properties of particulate composites of relaxor (BaTi<Subscript>0.85</Subscript>Sn<Subscript>0.15</Subscript>O<Subscript>3</Subscript>) and ferrite (NiFe<Subscript>2</Subscript>O<Subscript>4</Subscript>) synthesized by gel-combustion method

Particulate composites of (1-x) BaTi_0.85Sn_0.15O₃ – x NiFe₂O₄ (with x?=?5, 10,15 and 20 wt%) were synthesized using the solid-state reaction method by sintering at 1350 °C for 4 h. Formation of the diphase composites was confirmed by X-ray diffraction (XRD) and Fourier Transform Infra-red (FTIR) techniques. Temperature (RT-200 °C) and frequency (20 Hz- 1 MHz) dependent of AC conductivity, dielectric constant and dissipation have been studied. The dielectric constant exhibits strong frequency dispersion in the range 20 Hz-1 kHz which is attributed to Maxwell-Wagner interfacial polarization occurring at grain-grain-boundaries interface/interface of grains of BTS-NF. The M-H curve of all the composites exhibited a hysteresis loops typical charcateistic of a ferromagnetic material. The ferromagnetic ordering in the composites on account of NiFe₂O₄ as a constituent is explained using bound magnetic polarons (BMPs) model. The experimental magnetic data have been fitted to BMP model. Value of M_s is smaller, whereas of H_c and M_r are higher of the composites compared to value for NiFe₂O₄. The temperature at which divergence in the M vs. T plot in ZFC and FC starts is higher for the composites than for NiFe₂O₄.     

Influence of substitution on dielectric diffuseness in Ba<Subscript>(1-x)</Subscript>Bi<Subscript>(2+2x/3)</Subscript>Nb<Subscript>2</Subscript>O<Subscript>9</Subscript> ceramics prepared by chemical precursor decomposition method

Barium bismuth niobate, Ba_(1-x)Bi_(2+2x/3)Nb₂O₉ (BBN with x = 0.0, 0.1, 0.2, 0.3, 0.4) ceramic powders in the nanometer range were prepared by chemical precursor decomposition method (CPD). The single phase layered perovskite was prepared throughout the composition range studied. No intermediate phase was found during heat treatment at and above 600°C. The crystallite size and the particle size, obtained from XRD and TEM respectively, were in the range of 15–30 nm. The addition of Bi₂O₃ substantially improved the sinterability associated with high density (96%) which was otherwise difficult in the case of pure BaBi₂Nb₂O₉ (BBN x = 0.0). The sintering was done at 900°C for 4 h. The relative permittivity of BBN ceramics at both room temperature and in the vicinity of the temperature of maximum permittivity (T_m) has increased significantly with increase in bismuth content and loss is also decreased to a certain level of bismuth doping. T_m increased with increase in Bi₂O₃. The diffuseness (γ) in the phase transition was found to increase from 1.54 to 1.98 with the increase in Ba²⁺ substitution level from x = 0.0 to x = 0.3.     

Defects and Transport in Langasite II: Donor-doped (La<Subscript>3</Subscript>Ga<Subscript>4.75</Subscript>Nb<Subscript>0.25</Subscript>SiO<Subscript>14</Subscript>)

The electrical conductivity of Nb doped langasite (La₃Ga_4.75Nb_0.25SiO₁₄) was examined as a function of temperature and oxygen partial pressure by complex impedance spectroscopy. A pO₂-independent regime was found at high pO₂ followed by a pO₂^{− 1/6} dependent regime at low pO₂. A defect model consistent with these results was derived in which the electron density n is fixed by the density of ionized Nb donors at high pO₂ and by the generation of oxygen vacancies at low pO₂. The temperature and oxygen partial pressure dependence of the electron density was obtained independently by thermoelectric power measurements. The Nb donor ionization energy was determined to be 1.52 ± 0.06 eV, confirming Nb to be a deep donor in langasite. By combining conductivity and thermoelectric power data, an expression for the electron mobility given by μ_e = 1.1× 10^{− 2}exp( ) was obtained. After evaluating the temperature dependent conductivity data under reducing conditions, in light of the defect model, a value for the reduction enthalpy (E_r = 6.57 ± 0.24 eV) was derived.     

Effect of Ca substitution on microwave dielectric properties of BaV<Subscript>2</Subscript>O<Subscript>6</Subscript> ceramics

Effects of Ca substitution for Ba on the phase composition, microstructure, sintering behavior and microwave dielectric properties of nominal ceramics Ba_1-xCa_xV₂O₆ (0.2?≤?x?≤?0.5) were investigated. The XRD, Raman and SEM results revealed that BaV₂O₆ and CaV₂O₆ composite ceramics were formed. Nominal ceramics Ba_1-xCa_xV₂O₆ could be well densified at about 550 °C via a solid-state reaction method. The microwave dielectric properties exhibited strong dependence on the composition and microstructure. Typically, the Ba_0.7Ca_0.3V₂O₆ ceramics sintered at 550 °C exhibited excellent microwave dielectric properties: ε_r?=?10.9, Qxf?=?17,100 GHz (at 9.9 GHz), and τ_f?=?4 ppm/°C. Meanwhile, Ba_0.7Ca_0.3V₂O₆ ceramics also showed good chemical compatibility with Al electrode. These results indicated that the Ba_0.7Ca_0.3V₂O₆ ceramics could be a promising candidate for the ULTCC technology.     

Effects of Processing Conditions on the Dielectric Properties of CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript>

There have been a number of recent reports of anomalously large permittivities (ε _r ≈ 10⁴) in the material CaCu₃Ti₄O₁₂. The dielectric spectra is characterized by a large, relatively temperature independent permittivity near room temperature which exhibits a dielectric relaxation above 100 K. The crystal structure of CaCu₃Ti₄O₁₂ can be described as pseudo-perovskite with a cubic unit cell with a lattice constant of 7.391 Å. The ubiquitous occurrence of this dielectric behavior in ceramics, single crystals, and thin films suggests that the polarization is not related to a simple conducting grain/insulating grain boundary-type system. While the precise origin of the dielectric response is not entirely clear, in this work it is shown that processing conditions have a significant influence on the room temperature dielectric properties. Specifically, the permittivity and loss exhibit a strong dependence on the oxygen partial pressure and sintering time. In fact, studies of the effects of sintering time and supporting evidence from capacitance-voltage measurements conclusively show that there is no direct relationship between the permittivity and grain size, as is the case in classical boundary layer systems. Lastly, with aliovalent doping the room temperature dielectric properties can be optimized to provide a high permittivity (ε _r ～ 8,000) dielectric with relatively low loss (tan δ < 0.05 at 1 kHz).     

Mechanical and electrical properties of Bi<Subscript>1.5-x</Subscript>La<Subscript>x</Subscript>Zn<Subscript>0.92</Subscript>Nb<Subscript>1.5</Subscript>O<Subscript>6.92</Subscript> pyrochlore ceramics

BiFeO₃-Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃ (BF-PMN-PT) ternary ceramics with pure perovskite phase were prepared through a two-step solid reaction method. Based on structural analysis, the ternary phase diagram of BF-PMN-PT solid solution at room temperature has been established. The Curie temperature T_C, remnant polarization P_r and piezoelectric constant d₃₃ vary in the range of 138 to 225 °C, 15.12 to 23.65 μC/cm² and 129 to 276 pC/N, respectively. The coercive field Ec increases gradually from 5.77 to 29.56 kV/cm upon PT content increasing. The magnetic study suggests that the magnetism turns from diamagnetism for PMN-PT to paramagnetism for BF-PMN-PT by adding BiFeO₃ into PMN-PT and adding more content of BF does not change the paramagnetism further.     

Ionic conduction and crystal structure of aluminum doped NASICON-type LiGe<Subscript>2</Subscript>(PO<Subscript>4</Subscript>)<Subscript>3</Subscript> glass-ceramic crystallized at different times and temperatures

In this communication, NASICON-type glass-ceramic (lithium germanium phosphate, LiGe₂(PO₄)₃) was prepared as lithium super ionic conductor using aluminum as dopant for ionic conduction improvement. The solid solution was Li_1?+?xAl_xGe_2-x(PO₄)₃ (x?=?0.5) that Ge⁴⁺ ions were partially substituted by Al³⁺ ions in crystal structure. Initial glasses were converted to glass-ceramics at different times and temperatures for maximum ionic conduction achievement. The crystals were characterized by X-ray Diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), Energy-Dispersive X-ray spectroscopy (EDX), Differential Scanning Calorimetry (DSC) and Complex Impedance Spectroscopy (CIS) methods. The maximum lithium ion conductivity for glass-ceramic, 5.32?×?10^?3 S/cm at 26 °C was obtained for specimen crystallized at 850 °C for 8 h with minimum activation energy of 0.286 eV. Increasing the crystallization temperature results in secondary phase formation in grain boundary and increasing in crystallization time results in microcracks formation in specimen. Both phenomena decreased the ionic conductivity.