含MnO2和Sb2O3的SnO2基陶瓷烧结致密化和导电性能的研究

以粒度0.401μm、纯度为99.5%的SnO2,粒度0.6μm、纯度为99%的MnO2和粒度0.12μm、纯度为99%的Sb2O3为原料,配料后,放在尼龙行星球磨罐中加无水乙醇湿混4h,烘干后用50μm筛网筛分,取筛下料在20mm模具中以6MPa压力成型为2~3mm薄片,再将薄片做200MPa冷等静压处理。将处理后的生坯放入硅钼棒炉中于空气气氛下分别在1300℃、1350℃、1400℃、1420℃、1450℃、1470℃、1500℃均保温5h烧成,随炉冷却至常温。采用排水法测试试样密度,利用SEM和EDX分析微观结构和元素组成,采用四探针法测量电阻率。研究结果表明MnO2的加入对SnO2基陶瓷的相对密度有很大的提高,而Sb2O3的加入对SnO2陶瓷的致密化起到抑制的作用,但适量的Sb2O3可显著提高同时含有MnO2和Sb2O3的SnO2陶瓷的导电性能。同时添加MnO2和Sb2O3的试样的相对密度和电阻率与Mn-Sn-O和Sb-Sn-O分别形成的相关固溶体有很大的关系。对试样的相对密度和电阻率结果分析表明,对于SnO2基陶瓷,MnO2的最佳添加量为1.0%,Sb2O3的最佳添加量为0.5%;其烧结温度为1400℃时,其相对密度为95.63%,电阻率为78.37Ω·cm。     

氧化锌-氧化锑复合掺杂二氧化锡基陶瓷的制备与电学性能

用无压烧结技术制备氧化锌(ZnO),氧化锑(Sb2O3)及ZnO-Sb2O3掺杂的氧化锡(SnO2)基陶瓷材料.用Archimedes排水法测定样品的相对密度(ρr).用van der Pauw 法测量SnO2基陶瓷材料的电阻率(R).用扫描电镜测试研究SnO2基陶瓷材料的显微结构、晶体结构,并分析材料的结构与性能的内在联系.研究表明:ZnO作为烧结助剂能显著地提高材料的烧结性能,材料的?r随ZnO掺量的增加先升高后降低,当ZnO的掺量(摩尔分数,下同)为1.0%时,样品的ρr最佳.材料的ρr随Sb2O3的增加而逐渐降低,R随Sb2O3的增加呈现出先降低后升高再降低的变化趋势.Sb2O3的掺量为0.5%时,ρr与R均较好;1.0%ZnO-0.5%Sb2O3的复合掺杂,在1 400℃无压烧结即可得到ρr为97%、室温R为0.1099μ·cm的致密SnO2基导电陶瓷材料.     

SPS制备MgO-Y2O3复相陶瓷及其性能研究

与单相的MgO和Y2 O3陶瓷相比,MgO-Y2 O3复相陶瓷具有更高力学性能的同时兼具良好的红外透过性,可以满足在极端条件下使用红外窗口材料的要求.本文分别采用沉淀法和软模板法制备了高比表面积的MgO和Y2 O3粉体,通过球磨将两种粉体混合均匀,利用SPS制备得到了复相陶瓷.主要探索了不同烧结温度对陶瓷微观结构、致密度、力学、热学及光学性能的影响.研究结果表明,复相陶瓷的最佳烧结温度为1200℃,密度达到完全致密,透过率最高为51％(4.17μm),硬度为10.31 GPa,断裂韧性为2.54 MPa·m1/2,杨氏模量为248 GPa,MSP强度为129 MPa以及室温热导率为15.57 W/(m·K).     

La2O3掺杂对SnO2基陶瓷致密化与力学性能的影响

以La2O3作掺杂剂制得SnO2基陶瓷.运用XRD和SEM对SnO2基陶瓷的显微结构进行了表征,并测试了SnO2基陶瓷的体积密度、维式硬度、抗弯强度及断裂韧性.结果表明,在一定的掺杂范围内, La2O3的引入能明显改善SnO2基陶瓷的力学性能.同时,La2O3的加入可促进SnO2晶相的形成和生长,对SnO2基陶瓷的致密化起到了良好的作用.     

纳米Sb2O3阻燃剂的制备新工艺及应用

采用沉淀法和金属醇盐水解法制备纳米Sb2O3阻燃剂。研究了制备工艺条件对制得的纳米Sb2O3粒径的影响,得到了粒径最小的纳米Sb2O3的最佳制备工艺。X射线粉末衍射(XRD)和透射电子显微镜(TEM)结果表明：纳米Sb2O3为斜方晶形,晶粒粒径分别为40-50nm和30-40nm。并将制得的纳米Sb2O3阻燃剂用于阻燃聚乙烯泡沫塑料中,提高了阻燃聚乙烯泡沫塑料的力学性能和阻燃性能。     

偶联剂表面改性Sb2O3的研究

研究了不同偶联剂表面改性Sb2O3的改性效果和条件,结果发现钛酸酯偶联剂NDZ-101的改性效果最佳,其最佳用量为1．0％与理论计算值相当;当改性时间大于30min,改性温度大于60℃,改性效果趋于稳定。     

CaO-SiO2-B2O3系陶瓷的低温快烧制备与性能

以CaCO3,SiO2,H3BO3为原料,采用无压烧结法,分别在3个不同的烧成条件下,低温快速烧成制备了CaO-SiO2-B2O3系陶瓷样品,所得样品在室温下快速冷却.测定了该体系的烧结性能和样品的体积电阻率,并探讨了其变化规律.结果表明:按照一定比例复合添加ZnO和MgO,对CaO-SiO2-B2O3系陶瓷具有明显的助烧作用;在添加量少于6.0%(质量分数,下同),同比例复合添加ZnO,MgO时较相应单一添加ZnO(为同比例复合添加ZnO,MgO时质量的1/2)所得样品的体积电阻率大.当添加6.0%ZnO,6.0%MgO时,在3种烧成条件下,均可制得体积密度较大、吸水率较小、体积电阻率较大(>1011 Ω·cm)的致密烧结体.     

Sb掺杂SnO2增反射薄膜的制备及性能研究

为提高玻璃的保温性能,以SnCl5.HO和SbCl为主要原料,采用溶胶-凝胶法制得SnO增反射薄膜,对该样品4232的性能研究结果表明,该薄膜可见光透过率可达90%,而对红外光谱具有良好的反射性。     

Spark Plasma Sintering of High-Density Antimony-Doped Tin Oxide Ceramics from Nanoparticles

The spark plasma sintering (SPS) technique was used for the first time to fabricate antimony-doped tin oxide (ATO) ceramics from monodispersed ATO nanoparticles synthesized by the hydrothermal method. The ceramics' relative density increased from 83.7% when sintered at 750°C to the highest value of 97.4% at 850°C, and a corresponding highest conductivity of 2.2 × 10⁻⁴Ω·cm was also obtained at this temperature.     

放电等离子烧结制备AlON陶瓷

以A1N粉和A12O3为原料，用放电等离子烧结(SPS)技术制备单相A1ON陶瓷。研究表明：用SPS技术在1700℃仅保温3min就可得到99TD％的A1ON陶瓷，该技术是实现A1ON陶瓷低温快速烧结的有效途径。     

放电等离子烧结技术制备熔融石英陶瓷

以熔融石英陶瓷粉体为原料,采用放电等离子烧结(SPS)技术制备了熔融石英陶瓷材料。文章讨论了SPS方法制备熔融石英陶瓷材料的烧结行为和烧结机理,计算了熔融石英陶瓷的析晶温度并与实际测试结果进行了比较。结果表明:利用SPS方法,在短时间内其析晶温度在1150℃以上,且烧结温度为1150℃时,材料的致密度达到了99.7%,熔融石英的烧结是表层熔融烧结机制,烧结过程中压力对致密度的提高贡献很大。     

Preparation of Fluorine-Containing Indium Tin Oxide Sputtering Targets using Spark Plasma Sintering Process

Fluorine-containing indium tin oxide (F-ITO) sputtering targets were prepared using spark-plasma-sintering (SPS) process. The initial powder, which was prepared by reacting ITO with HF, was sintered to the 10 cm-disks with nearly 90% of the theoretical density by the SPS process. The resulting disks were consisted of ITO and InOF, and the fluorine content was about 4 at.%. Using the F-ITO disks as sputtering target, thin films were deposited on the glass substrates. The electrical conductivity and optical transmission of the deposited films were comparable to those of the conventional ITO films, while the surface roughness of the films was much improved.     

Spark Plasma Sintering of Bismuth Titanate Ceramics

Spark plasma sintering (SPS) was used to fabricate bismuth titanate (Bi₄Ti₃O₁₂) ceramics. The densification, microstructure development and dielectric properties were investigated. It was found that the densification process was greatly enhanced during SPS. The sintering temperature was 200°C lower and the microstructure was much finer than that of the pressureless sintered ceramics, and dense compacts with a high density of over 99% were obtained at a wide temperature range of 800°–1100°C. Dielectric property measurement indicated that the volatilization of Bi³⁺ was greatly restrained during SPS, resulting in an unprecedented low dielectric loss for pure Bi₄Ti₃O₁₂ ceramics.     

Fast Densification of Ultra-High-Temperature Ceramics by Spark Plasma Sintering

This work investigated suitability and efficacy of the sintering technique known as spark plasma sintering to produce ultra-high-temperature-based Hf and Zr borides. Ceramic–matrix composites in the systems HfB₂–SiC, ZrB₂–MoSi₂, and ZrB₂–ZrC–SiC were processed by spark plasma sintering and hot pressing. The effects of processing were evaluated comparing the materials microstructure and properties. Compared with hot-pressing technique, spark plasma sintering offers the great advantage to fabricate successfully in short time (i.e., cuts in costs) poorly sinterable powder compositions without the help of any sintering activators.     

Spark Plasma Sintering (SPS) of NASICON Ceramics

Spark plasma sintering (SPS) method was used to obtain dense NASICON ceramics with a high-electrical conductivity, which was compared with conventional solid-state sintering. The fully dense NASICON was achieved at a relatively low-sintering temperature of 1100°C, whereas the apparent density of the specimen prepared by conventional sintering was 74% of the theoretical density. The highest conductivity of 1.8 × 10⁻³ Scm⁻¹ at 25°C, which is comparable to the best value reported, was achieved using the SPS process. Considering the phase, density, and microstructure, it appears that there is more room for improved conductivity by controlling the amount of monoclinic zirconia and the resistive grain-boundary glass phase.     

PMN–PT Ceramics Prepared By Spark Plasma Sintering

(1− x )Pb(Mg_1/2Nb_2/3)O₃− x PbTiO₃ (PMN–PT) ceramics of stoichiometric composition were fabricated by conventional pressureless sintering (CS) and spark plasma sintering (SPS). The CS ceramics exhibited a change from relaxor to normal ferroelectric behavior (FE) with increasing PT content. However, low dielectric constants, frequency dispersion, and diffuse phase transition behavior typical for relaxors were obtained for all SPS ceramics. FE and piezoelectric measurements further demonstrated low remanent polarization and strain, high coercive field, and low electromechanical response from SPS materials. Normal dielectric and enhanced FE performance appeared following high-temperature heat treatment after SPS. The effects of grain size, microstructure, and chemical heterogeneity formed during fast sintering are considered.     

低温放电等离子烧结法制备氮化硅陶瓷

分别以MgO-Al2O3或MgO-AlPO4作为烧结助剂,采用放电等离子体低温快速烧结方法制备了主相为α相的Si3N4陶瓷材料.采用X射线衍射和扫描电子显微镜分析了样品的物相组成和显微结构;研究了烧结助剂及其含量、烧结温度对陶瓷样品的相对密度与力学性能的影响.结果表明:当采用4%质量分数,下同)MgO-4%Al2O3烧...     

Preparation of Textured Bismuth Titanate Ceramics Using Spark Plasma Sintering

Textured bismuth titanate ceramics were successfully produced using spark plasma sintering and platelike bismuth titanate particles prepared using a molten-salt method. The microstructure and dielectric properties of the samples were investigated. The results showed that the dielectric property of the textured bismuth titanate ceramics was anisotropic in various directions and that spark plasma sintering was an effective sintering technology to obtain textured, dense bismuth titanate ceramics at a low temperature.