Ge/Si超导型和Ge_xSi_(1-x)/Si合金型超晶格的分子束外延生长和特性研究

用分子束外延(MBE)技术生长了Ge/Si超薄型超晶格和Ge_xSi_(1-x)/Si合金型超晶格。用RHEED强度振荡技术生长出了非常陡峭和平整的Si/Ge异质结界面。在Si(001)上生长的一个单原子层Ge和一个单原子层Si的多层结构是可以得到的最薄的超晶格。合金型超晶格的厚度可满足器件制造的要求并避免了失配位错的产生。用XTEM、RBS及X射线衍射对外延晶体质量作了签定,用Raman谱和电调制反射谱对超晶格的光学特性进行了研究。     

Ge纳米点/Si纳米线复合结构制备及微结构特征分析

结合金属纳米颗粒辅助化学刻蚀法制备Si纳米线和低压化学气相外延自组织生长Ge纳米点制备了Ge纳米点/Si纳米线复合结构,采用电子显微镜、微区原子力/拉曼联合测试系统进行了微结构表征。Ge纳米点基本均匀地分布于Si纳米线上,通过改变生长参数可有效控制Ge纳米点的尺寸和密度。在非常扁薄的无支撑的纳米点/线复合结构中,由于应力和热效应的作用使Si和Ge的拉曼散射特征峰发生了较大的红移。     

NiSi_x/Si/Ge核壳纳米棒阵列作为锂离子电池负极材料的电化学性能

硅是目前已知的理论比容量最高的锂离子电池负极材料,但是循环性能较差。本文通过射频磁控溅射的方法,成功合成出了NiSix/Si/Ge核壳纳米棒阵列,并通过扫描电子显微镜(SEM)和能量色散X射线光谱仪(EDX)对其形貌和成分进行了表征。将原位生长的NiSix/Si/Ge核壳纳米棒阵列直接作为工作电极,组装成纽扣半电池进行电化学和循环性能测试,NiSix/Si/Ge核壳纳米棒阵列的首次放电容量达到了2000mAhg-1左右,首次效率在70%左右,并且在100个循环以后仍保有初始可逆容量的30%以上。相比NiSix/Si纳米棒阵列,NiSix/Si/Ge核壳纳米棒阵列的循环性能明显得到了提升,说明锗的包覆对硅的锂离子电池性能改进起到了非常重要的作用。     

水热法制备Ge/SiOx纳米电缆

以混合的氧化锗粉和硅粉为原料,采用水热法在高温高压下制备出具有核-壳同轴结构的Ge／SiOx纳米电缆。扫描和透射电镜研究表明这种Ge／SiOx纳米同轴电缆的产量高,直径分布均匀,长度可达微米级,并证实其为非晶态SiOx包裹Ge内核的核-壳结构。Ge芯线沿着[211]方向生长。Ge／SiOx纳米同轴电缆的生长过程遵循气-液-固和氧化物辅助生长机制,与原料中GeO2与Si的比率有关。     

锗/石墨/硅薄膜结构的制备及其性质分析

利用磁控溅射技术在单晶硅衬底上制备出具有Ge/石墨/Si结构的薄膜样品,然后把其放入快速热退火(RTA)炉中退火。扫描电子显微镜(SEM)测试表明,石墨过渡层的引入缓解了Si、Ge之间的晶格失配和热失配。X射线衍射(XRD)分析表明450℃是Ge薄膜晶化的临界衬底温度,750℃是使Ge薄膜RTA晶化程度明显提高的临界退火温度,30s是最佳退火时间。     

硅、锗材料在Si(100)表面的生长研究

利用扫描隧道显微镜和超高真空实验装置系统进行了Si(10 0 )表面生长Si,Ge的实验研究。分析了所生成表面的形貌、结构等物理性质。研究表明 :Si在Si(10 0 )表面的同质生长可以形成纳米结构薄膜。Ge在Si(10 0 )表面生长形成规则的三维小岛。而在Si/Ge/Si(10 0 )多层膜上生长则形成大小二种三维岛。研究表明大岛具有Ge/Si/Ge的壳层结构     

热蒸发法制备第Ⅳ族半导体纳米线的研究进展

系统地分析了压强和温度在热蒸发法生长中对Si纳米线的产量和形貌结构的影响,并全面解析了用热蒸发法制备Ⅳ族纳米线的氧化物辅助生长机理。同时,对国内外采用热蒸发法制备第Ⅳ族半导体(Si、Ge、SiGe)纳米线的研究现状进行了详细介绍,并展望了其应用前景。     

快淬低纯Gd5Si2Ge2合金的结构和磁熵变

采用纯度为99%的低纯稀土金属Gd经电弧炉熔炼获得Gd5Si2Ge2 母合金,然后通过快淬研究快淬工艺对低纯Gd5Si2Ge2 合金结构与磁熵变的影响。粉末衍射结构分析表明,铸态Gd5Si2Ge2 合金由Gd5Si2Ge2 相、Gd5 (Si、Ge)3 相和Gd(Si、Ge)相所组成;而甩带速度为25、40m/s的合金均为Gd5Si4 型正交相。用最小二乘法计算得两种不同快淬速度合金的晶格常数没有明显差异。甩带速度为40m/s 的Gd5Si2Ge2 合金的居里温度(Tc=305K)在室温区间,等温磁熵变为7.25J/kg·K(0~5T)。     

硅、锗材料在Si（100）表面的生长研究

利用扫描隧道显微镜和超高真空实验装置系统进行了Si（100）表面生长Si，Ge的实验研究。分析了所生成表面的形貌、结构等物理性质。研究表明：Si在Si（100）表面的同质生长可以形成纳米结构薄膜。Ge在Si（100）表面生长形成规则的三维小岛，而在Si/Ge/Si（100）多层膜上生长则形成大小二种三维岛，研究表明大岛具有Ge/Si/Ge的壳层结构。     

a-Si∶H/a-Ge∶H超晶格的界面特性研究

本文用红外(IR)和拉曼(Raman)谱研究了反应溅射 a-Si∶H/a-Ge∶H 超晶格的界面特性.定量分析发现,界面处没有因应力释放引起的 H 富集,不存在由超晶格结构引起的界面结构无序,界面处存在着～(5±2)(?)的 Si、Ge 组分混合层.我们对结果进行了初步分析.     

Significant reduction of thermal conductivity in Si/Ge core-shell nanowires

We report on the effect of germanium (Ge) coatings on the thermal transport properties of silicon (Si) nanowires using nonequilibrium molecular dynamics simulations. Our results show that a simple deposition of a Ge shell of only 1 to 2 unit cells in thickness on a single crystalline Si nanowire can lead to a dramatic 75% decrease in thermal conductivity at room temperature compared to an uncoated Si nanowire. By analyzing the vibrational density states of phonons and the participation ratio of each specific mode, we demonstrate that the reduction in the thermal conductivity of Si/Ge core-shell nanowire stems from the depression and localization of long-wavelength phonon modes at the Si/Ge interface and of high frequency nonpropagating diffusive modes.     

Thermal and tensile properties of Si/Ge core-shell and superlattice nanowires

The Stillinger-Weber potential-based MD (Molecular dynamics) method is used to simulate the heating-up and axial tension of Si/Ge core-shell and superlattice nanowires; according to the simulative results, the differences in their thermal and mechanical properties are discussed. The results show the following: (1) The Si/Ge superlattice nanowire is more thermally stable than the core-shell one, and their melting points are 1160 and 1320 K, respectively. (2) The Si/Ge core-shell nanowire has higher elastic module than the super-lattice one. (3) Under tension, the super-lattice nanowire has better antideformation capability than the core-shell one but has comparative antiloading capability.     

Thermal and tensile properties of Si/Ge core-shell and superlattice nanowires

The Stillinger-Weber potential-based MD (Molecular dynamics) method is used to simulate the heating-up and axial tension of Si/Ge core-shell and superlattice nanowires; according to the simulative results, the differences in their thermal and mechanical properties are discussed. The results show the following: (1) The Si/Ge superlattice nanowire is more thermally stable than the core-shell one, and their melting points are 1160 and 1320 K, respectively. (2) The Si/Ge core-shell nanowire has higher elastic module than the super-lattice one. (3) Under tension, the super-lattice nanowire has better antideformation capability than the core-shell one but has comparative antiloading capability.     

Sn(78)Ge(22)@carbon core-shell nanowires as fast and high-capacity lithium storage media

Branched Sn78Ge22@carbon core-shell nanowires were prepared by thermal annealing of butyl-capped Sn78Ge22 clusters at 600 degrees C in a vacuum. The first discharge and charge capacities are 1250 and 1107 mA h/g, showing a Coulombic efficiency of 88%. Such a one-dimensional core-shell design exploits the benefits of the Sn78Ge22 nanowire to produce an exceptional high rate lithium reactivity (93% Coulombic efficiency at 8C (=6400 mA/g) rate) as well as excellent capacity retention after extended cycles (capacity retention of 94%).     

Diffusion in Si(x)Ge(1-x)/Si nanowire heterostructures

Si0.48Ge0.52/Si tip/nanowire heterostructures were grown by pulsed laser vaporization (PLV) at a growth temperature of 1100 degrees C. Ge diffusion in [111]-growth Si nanowires was studied for different post-synthesis annealing temperatures from 200 degrees C to 800 degrees C. Ge composition profiles were quantified by energy-dispersive X-ray spectroscopy in a transmission electron microscope. The compositional profiles were modeled by a limited-source diffusion model to extract temperature-dependent diffusion coefficients. The Ge diffusion coefficients followed an Arrhenius relationship with an activation energy of 0.622 +/- 0.050 eV. This rather low activation energy barrier is similar to the previously reported activation energy barrier of 0.67 eV for Ge surface diffusion on Si, suggesting that surface diffusion may dominate in nanowires at this length scale.     

Thermal conductivity of ge and ge-si core-shell nanowires in the phonon confinement regime

Heterostructure core-shell semiconductor nanowires (NWs) have attracted tremendous interest recently due to their remarkable properties and potential applications as building blocks for nanodevices. Among their unique traits, thermal properties would play a significant role in thermal management of future heterostructure NW-based nanoelectronics, nanophotonics, and energy conversion devices, yet have been explored much less than others. Similar to their electronic counterparts, phonon spectrum and thermal transport properties could be modified by confinement effects and the acoustic mismatch at the core-shell interface in small diameter NWs (<20 nm). However, fundamental thermal measurement on thin core shell NWs has been challenging due to their small size and their expected low thermal conductivity (κ). Herein, we have developed an experimental technique with drastically improved sensitivity capable of measuring thermal conductance values down to ～10 pW/K. Thermal conductivities of Ge and Ge-Si core-shell NWs with diameters less than 20 nm have been measured. Comparing the experimental data with Boltzmann transport models reveals that thermal conductivities of the sub-20 nm diameter NWs are further suppressed by the phonon confinement effect beyond the diffusive boundary scattering limit. Interestingly, core-shell NWs exhibit different temperature dependence in κ and show a lower κ from 300 to 388 K compared to Ge NWs, indicating the important effect of the core-shell interface on phonon transport, consistent with recent molecular dynamics studies. Our results could open up applications of Ge-Si core shell NWs for nanostructured thermoelectrics, as well as a new realm of tuning thermal conductivity by "phononic engineering".     

Transport modulation in Ge/Si core/shell nanowires through controlled synthesis of doped Si shells

Appropriately controlling the properties of the Si shell in Ge/Si core/shell nanowires permits not only passivation of the Ge surface states, but also introduces new interface phenomena, thereby enabling novel nanoelectronics concepts. Here, we report a rational synthesis of Ge/Si core/shell nanowires with doped Si shells. We demonstrate that the morphology and thickness of Si shells can be controlled for different dopant types by tuning the growth parameters during synthesis. We also present distinctly different electrical characteristics that arise from nanowire field-effect transistors fabricated using the synthesized Ge/Si core/shell nanowires with different shell morphologies. Furthermore, a clear transition in the modification of device characteristics is observed for crystalline shell nanowires following removal of the shell using a unique trimming process of successive native oxide formation/etching. Our results demonstrate that the preferred transport path through the nanowire structure can be modulated by appropriately tuning the growth conditions.     

Role of confinement on carrier transport in Ge-Si(x)Ge(1-x) core-shell nanowires

We examine the impact of shell content and the associated hole confinement on carrier transport in Ge-Si(x)Ge(1-x) core-shell nanowires (NWs). Using NWs with different Si(x)Ge(1-x) shell compositions (x = 0.5 and 0.7), we fabricate NW field-effect transistors (FETs) with highly doped source/drain and examine their characteristics dependence on shell content. The results demonstrate a 2-fold higher mobility at room temperature, and a 3-fold higher mobility at 77K in the NW FETs with higher (x = 0.7) Si shell content by comparison to those with lower (x = 0.5) Si shell content. Moreover, the carrier mobility shows a stronger temperature dependence in Ge-Si(x)Ge(1-x) core-shell NWs with high Si content, indicating a reduced charge impurity scattering. The results establish that carrier confinement plays a key role in realizing high mobility core-shell NW FETs.     

Diameter-dependent composition of vapor-liquid-solid grown Si(1-x)Ge(x) nanowires

Diameter-dependent compositions of Si(1-x)Ge(x) nanowires grown by a vapor-liquid-solid mechanism using SiH(4) and GeH(4) precursors are studied by transmission electron microscopy and X-ray energy dispersive spectroscopy. For the growth conditions studied, the Ge concentration in Si(1-x)Ge(x) nanowires shows a strong dependence on nanowire diameter, with the Ge concentration decreasing with decreasing nanowire diameter below approximately 50 nm. The size-dependent nature of Ge concentration in Si(1-x)Ge(x) NWs is strongly suggestive of Gibbs-Thomson effects and highlights another important phenomenon in nanowire growth.     

Band-offset driven efficiency of the doping of SiGe core-shell nanowires

Impurity doping of semiconducting nanowires has been predicted to become increasingly inefficient as the wire diameter is reduced, because impurity states get deeper due to quantum and dielectric confinement. We show that efficient n- and p-type doping can be achieved in SiGe core-shell nanowires as thin as 2 nm, taking advantage of the band offset at the Si/Ge interface. A one-dimensional electron (hole) gas is created at the band-edge and the carrier density is uniquely controlled by the impurity concentration with no need of thermal activation. Additionally, SiGe core-shell nanowires provide naturally the separation between the different types of carriers, electron and holes, and are ideally suited for photovoltaic applications.