类石墨碳膜的制备及其与类金刚石碳膜的区分

类金刚石碳膜的碳键结构一般以sp3为主,用离子束辅助磁控溅射制备了以sp2为主的非晶碳膜,即类石墨碳膜。分析类石墨碳膜的成分、组织结构,并通过这些结果区分类石墨碳膜与类金刚石碳膜。采用卢瑟福背散射谱(RBS)、x射线衍射(XRD)、透射电镜(TEM)、x射线光电子谱(XPS)、四点探针法(FPM)分析了成分、组织结构及电阻率,结果表明:制备碳膜的晶体结构是非晶,碳键结构以sp2为主,电阻率在10-4~10-2??m之间。证明这种非晶碳膜不同于类金刚石碳膜(sp3为主)。     

高功率脉冲磁控溅射制备非晶碳薄膜研究进展

非晶碳薄膜主要由sp3碳原子和sp2碳原子相互混杂的三维网络构成,具有高硬度、低摩擦系数、耐磨损、耐腐蚀以及化学稳定性等优异性能。然而传统制备方法难以实现薄膜结构及其性能的综合调控,高功率脉冲磁控溅射因其离子沉积特性受到领域内专家学者的关注。总结了近年来关于高功率脉冲磁控溅射制备非晶碳薄膜材料的研究进展。重点介绍了高功率脉冲磁控溅射石墨靶的放电特性,指出了其在沉积非晶碳薄膜过程中获得高碳原子离化率的条件。针对离化率和沉积速率低,主要从提高碳原子离化率和碳离子传输效率等角度,介绍了几种改进的高功率脉冲磁控溅射方法。并对比了不同高功率脉冲磁控溅射方法中的碳原子离化特征、薄膜沉积速率、结构和力学性能。进一步地,探讨了高功率脉冲磁控溅射在制备含氢非晶碳薄膜和金属掺杂非晶碳薄膜中的优势及其在燃料电池、生物、传感等前沿领域的应用。最后,对高功率脉冲磁控溅射石墨靶的离子沉积特性、非晶碳薄膜制备及其应用研究趋势进行了展望。     

不锈钢表面脉冲激光镀类金刚石碳膜

介绍了利用脉冲激光在不锈钢表面镀制类金刚石碳酸的表面加工新方法，经加工后的材料表面微细硬度可达７０～１００ＧＰａ，表面摩擦系数低于０．１，可广泛用于作超硬耐磨保护涂层和表面减摩擦涂层。     

不锈钢表面脉冲激光镀类金刚石碳膜

介绍了利用脉冲激光在不锈钢表面镀制类金刚石碳膜的表面加工新方法。经加工后的材料表面微硬度可达70～100GPa，表面摩擦系数低于0．1，可广泛用作超硬耐磨保护涂层和表面减摩擦涂层。     

用离子源技术制备类金刚石膜研究

采用无灯丝离子源结合非平衡磁控溅射的方法,大面积地在不同基体上制备了光滑、均匀的类金刚石(DLC)膜层,用SEM、Raman、XPS、硬度计、划痕仪等手段分析和研究了膜层的形貌、结构及部分性能。结果表明:钛的掺入,有利于减少内应力、提高膜/基结合力,膜层的综合性能好,更适合于精密器件的表面改性。     

类金刚石碳膜的摩擦学性能及摩擦机制

类金刚石碳膜作为低摩擦系数的固体润滑耐磨层越来越受到重视,但其摩擦学行为强烈地依赖于试验条件和膜的本质,而膜的本质又依赖于制备工艺。本文概述了不同工艺方法制备的类金刚石碳膜的摩擦学性能,介绍了气氛、湿度、载荷及滑动速度等试验条件对其摩擦学行为的影响,对提出的不同摩擦机理进行了总结和讨论。     

透明类金刚石碳膜（DEC）

日本名古屋大学的高井治教授新近研制成功在树脂板之类制件上涂镀透明的类金刚石碳膜（DLC）的新技术。这一新技术特点在于运用了等离子化学气相沉积（CVD）并且在所用原料中添加了添加物。所获得的沉积涂层具有最高达80％的可见光透光率,     

中频磁控溅射制备类金刚石薄膜的功率因素研究

采用SP0806AS中频磁控溅射镀膜机,在硅(100)和高速钢基体上,采用双石墨靶在不同功率下沉积了类金刚石薄膜.研究表明,在功率为5～7 kW下薄膜具有较低的ID/IG比;所得薄膜表面平整,粗糙度Ra值在1.5～2.8 nm之间,薄膜厚度随功率增加而增大;在100～200 nm Ti膜作为过渡层条件下,薄膜纳米硬度和弹性模量随功率增加呈先增大后减小趋势,硬度/杨氏模量比值先增大后减小,当功率为7 kW时具有较高值;划痕实验临界载荷随功率增加先增大后减小,最大可大于50 N;薄膜的摩擦系数较小,平均摩擦系数可小于0.15;在50 g载荷下,薄膜磨穿的时间超过300 min.确定SP0806AS中频磁控溅射镀膜机沉积类金刚石薄膜的最佳功率范围是5～7 kW.     

基于高功率脉冲磁控溅射的Cr膜层研究进展

Cr膜层因其优异的耐高温、耐腐蚀和耐磨损性能,在航空航天、武器装备和核电能源等领域得到广泛应用。由于传统电镀硬铬技术具有一定的污染,人们一直致力于寻找一种无污染的高性能Cr膜层制备方式。具备清洁特性的物理气相沉积技术,尤其是具有高离化率和高结合力特点的高功率脉冲磁控溅射(HiPIMS)技术现已成为膜层研究领域的热点。介绍HiPIMS-Cr靶的放电特性,指出在Cr膜沉积过程中获得高Cr离化率的条件;对比HiPIMS-Cr膜层与传统工艺(电镀硬铬、直流磁控沉积溅射、电弧混合溅射等)制备的Cr膜层在表面形貌、微观组织和力学性能等方面的差异,概述不同工艺组合对Cr膜层沉积速率的影响,探讨不同影响因素对HiPIMS-Cr膜层的微观组织、力学性能的影响及相关研究进展。最后对HiPIMS-Cr膜层制备及其应用研究的趋势进行展望。     

类金刚石碳膜在生物医学上的应用前景

通过巨噬细胞、纤维原细胞、造骨细胞与DLC的相互作用以及动物实验,结果表明,DLC具有良好的组织相容性.从粘附的清蛋白/纤维蛋白原的量之比、动态凝血时间、血小板粘附试验的结果,得出了DLC具有优良的血液相容性的结论.最后,展望了其在微创介入治疗方面的应用前景.     

Annealing effects in Ag-doped amorphous carbon films deposited by dc magnetron sputtering

Thin carbon films containing about 11 at.% Ag were deposited by dc magnetron sputtering of composite graphite/silver target. The stability of film microstructure upon annealing at 600 °C in a vacuum has been studied by transmission electron microscopy and electron diffraction. The as-deposited C/Ag films consisted of silver nanoparticles distributed in an amorphous carbon matrix. Upon annealing, the tendency was revealed towards coalescence within the set of particles, i.e. increase in the particle average diameter and decrease in the density of particles with time. The above changes occurred faster than it is predicted by the theories for three-dimensional and two-dimensional diffusion coalescence. The direct collisions and fusion of particles along with the diffusion transport of Ag atoms is suggested to cause the above effect.     

Structure and properties of amorphous diamond-like carbon films produced by ion beam assisted plasma deposition

The microstructure and tribological properties of carbon film produced by ion beam assisted plasma deposition in a plasma source ion implantation (PSII) chamber with energies varied from 0 to 30 keV are examined. The process is illustrated schematically, and Raman spectra as well as TEM images and corre-sponding diffraction patterns of carbon films are shown.     

Ti-Si-N films prepared by magnetron sputtering

A film growth mechanism, expressed in terms of depositing hard films onto the soft substrate, was proposed. Multicomponent thin films of Ti-Si-N were deposited onto Al substrate with a double-target magnetron sputtering system in an Ar-N2 gas mixture. The Ti-Si-N films were investigated by characterization techniques such as X-ray diffraction (XRD), atomic force microscope (AFM), electron probe microanalyzer (EPMA), scratch test and nanoindentation. The as-deposited films have a good adhesion to Al substrate and appear with smooth and lustrous surface. The films show nanocomposite structure with nano TiN grains embedded in an amorphous SiNx matrix. The maximum hardness of the films was achieved as high as 27 Gpa. The influences of the N2 flow rate and substrate temperature on the growth rate and quality of the films were also discussed. For all samples, the Ar flow rate was maintained constant at 10 ml. min-1, while the flow rate of N2 was varied to analyze the structural changes related to chemical composition and friction coefficient. The low temperature in the deposited Ti-Si-N films favors the formation of crystalline TiN, and it leads to a lower hardness at low N2 flow rate. At the same time, the thin films deposited are all crystallized well and bonded firmly to Al substrate, with smooth and lustrous appearance and high hardness provided. The results indicate that magnetron sputtering is a promising method to deposit hard films onto soft substrate.     

非平衡磁控溅射Ti掺杂类金刚石薄膜的基本特性

利用非平衡磁控溅射技术在镜面抛光的SCM415渗碳淬火钢基片上沉积了无掺杂类金刚石(DIE)薄膜和不同含量Ti掺杂类金刚石(Ti-DIE)薄膜.利用AFM、SEM、TEM对薄膜的微观结构与形貌进行了观察,利用纳米硬度计、摩擦磨损试验仪及纳米划痕仪测试了薄膜的显微硬度、摩擦系数及薄基结合强度.结果表明:随着Ti的掺杂,薄膜硬度先迅速降低,然后保持不变,在Ti含量为25at%时薄膜硬度出现回升,膜基结合强度随Ti的掺杂呈单调增强趋势.与无掺杂类金刚石薄膜相比,掺杂Ti后薄膜表面微观凸凹增多,摩擦系数增大.对于Ti-DIE薄膜来说,随着Ti掺杂量的增加,摩擦系数出现减小的趋势.其原因在于Ti掺杂量的增加使Ti-DLC薄膜变得更加致密,同时Ti的掺杂还有利于弥补基体表面的凸凹缺陷,使薄膜变得更平滑.     

Exploring the potential of high power impulse magnetron sputtering for growth of diamond-like carbon films

Amorphous carbon films are deposited employing high power impulse magnetron sputtering (HiPIMS) at pulsing frequencies of 250 Hz and 1 kHz. Films are also deposited by direct current magnetron sputtering (dcMS), for reference. In both HiPIMS and dcMS cases, unipolar pulsed negative bias voltages up to 150 V are applied to the substrate to tune the energy of the positively charged ions that bombard the growing film. Plasma analysis reveals that HiPIMS leads to generation of a larger number of ions with larger average energies, as compared to dcMS. At the same time, the plasma composition is not affected, with Ar⁺ ions being the dominant ionized species at all deposition conditions. Analysis of the film properties shows that HiPIMS allows for growth of amorphous carbon films with sp³ bond fraction up to 45% and density up to 2.2 g cm^− 3. The corresponding values achieved by dcMS are 30% and 2.05 g cm^− 3, respectively. The larger fraction of sp³ bonds and mass density found in films grown by HiPIMS are explained in light of the more intense ion irradiation provided by the HiPIMS discharge as compared to the dcMS one.     

Effect of bias voltage on microstructure and properties of Ti-doped graphite-like carbon films synthesized by magnetron sputtering

Ti-doped graphite-like carbon (GLC) films with different microstructures and compositions were fabricated using magnetron sputtering technique. The influence of bias voltages on microstructure, hardness, internal stress, adhesion strength and tribological properties of the as-deposited GLC films were systemically investigated. The results showed that with increasing bias voltage, the graphite-like structure component (sp² bond) in the GLC films increased, and the films gradually became much smoother and denser. The nanohardness and compressive internal stress increased significantly with the increase of bias voltage up to −300 V and were constant after −400 V. GLC films deposited with bias voltages in the range of -300--400 V exhibited optimum adhesion strength with the substrates. Both the friction coefficients and the wear rates of GLC films in ambient air and water decreased with increasing voltages in the lower bias range (0--300 V), however, they were constant for higher bias values (beyond −300 V) . In addition, the wear rate of GLC films under water-lubricated condition was significantly higher for voltages below −300 V but lower at high voltage than that under dry friction condition. The excellent tribological performance of Ti-doped GLC films prepared at higher bias voltages of −300--400 V are attributed to their high hardness, tribo-induced lubricating top-layers and planar (2D) graphite-like structure.     

Influence of bias on properties of carbon films deposited by MCECR plasma sputtering method

The mirror-confinement-type electron cyclotron resonance(MCECR) plasma source has high plasma density and high electron temperature. It is quite useful in many plasma processing, and has been used for etching and thin-film deposition. The carbon films with 40 nm thickness were deposited by MCECR plasma sputtering method on Si, and the influence of substrate bias on the properties of carbon films was studied. The bonding structure of the film was analyzed by the X-ray photoelectron spectroscopy(XPS), the tribological properties were measured by the pin-on-disk(POD) tribometer, the nanohardness of the films was measured by the nanoindenter, and the deposition speed and the refractive index were measured by the ellipse meter. The better substrate bias was obtained, and the better properties of carbon films were obtained.     

Transparent conductive Sb-doped SnO2/Ag multilayer films fabricated by magnetron sputtering for flexible electronics

The effects of an embedded silver layer and substrate temperature on the electrical and optical properties of Sb-doped SnO₂ (ATO)/silver (Ag) layered composite structures on polyethylene naphthalate substrates have been investigated. The highest conductivity of ATO/Ag multilayer films was obtained with a carrier concentration of 1.5 × 10²² cm^?3 and a resistivity of 2.4 × 10^?5 Ω cm at the optimum Ag layer thickness and substrate temperature. The photopic averaged transmittance and Haacke figure of merit are 81.7%, and 21.7 × 10^?3 Ω^?1, respectively. In addition, a conduction mechanism is proposed to elucidate the mobility variation with increased Ag thickness. We also describe the influence of substrate temperature on the structural, electrical and optical properties of the ATO/Ag multilayer films, and propose a mechanism for the changes in electrical and optical properties at different substrate temperatures.     

Growth and properties of hydrogenated microcrystalline silicon thin films prepared by magnetron sputtering with different substrate temperatures

Hydrogenated microcrystalline silicon(μc-Si∶H)thin films were deposited by an radio frequency(RF)(13.56 MHz)magnetron sputtering at different substrate temperat...     

Diamond-like carbon films synthesized on bearing steel surface by plasma immersion ion implantation and deposition

Diamond-like carbon (DLC) films were synthesized by plasma immersion ion implantation and deposition (PIIID) on 9Cr18 bearing steel surface. Influences of working gas pressure and pulse width of the bias voltage on properties of the thin film were investigated. The chemical compositions of the as-deposited films were characterized by Raman spectroscopy. The micro-hardness, friction and wear behavior, corrosion resistance of the samples were evaluated, respectively. Compared with uncoated substrates, micro-hardness results reveal that the maximum is increased by 88.7%. In addition, the friction coefficient decreases to about 0.1, and the corrosion resistance of treated coupons surface are improved significantly.