数据库的开发和应用模式探究

在当今社会企业竞争越来越激励的大环境下,企业需要打造一个业务流程完整的一体化信息系统,数据库的C/S和B/S单一开发模式已经不能满足复杂的业务需求。本文针对这种状况,通过分析数据库在开发全过程中根据角色所需要实现的工作,表明了一个全面系统实现的复杂性。又通过研究C/S和B/S单一模式的应用局限性,提出了C/S和B/S混合模型,它能够结合C/S和B/S的优点,避免了它们自身的缺点,使数据库更好的被应用。     

CAD/PDM基于三层C/S模式的集成技术研究

本文分析了三维CAD与PDM的双向集成架构,以及基于COM组件技术的三层C/S模式在UG/Open开发中的应用方法。通过集成系统中产品模型文件管理模块的开发实例,实现了UG/Open,COM,三层C/S模式和MFC相结合的应用开发。此外,为其他CAD系统的二次开发提供参考。     

C/S模式基层装备信息管理系统的研究与设计

本文根据基层部队的实际情况,结合MIS开发原则和网络数据库技术,基于客户机/服务器(C/S)模式,以SQL Server 2000数据库系统为平台,设计了基层装备信息管理系统。通过对该系统的实际应用,提高了装备管理人员的工作效率以及装备信息的准确性。     

基于Web Service的分布式网络教学平台系统的设计

本文针对当前网络教学平台应用系统普遍采用的C/S、B/S应用架构的不足,基于Web Service的分布式设计架构的优势,设计并开发了一种新的面向服务的三层分布式网络教学Web平台系统,同时论述了该架构下相应Web服务的具体实现方法。     

MPLS VPN跨域技术在电力数据通信网中的深化应用

随着企业网的不断发展及MPLS VPN部署的推广实施,在提供服务的骨干网络中,跨越不同服务提供商管理边界的跨域部署成为必然的要求.跨域VPN的建立过程经过近几年的实践和快速发展,业界提出了几种VPN跨域方法,即OPTION A/B/C三种.MPLS VPN可以分为MPLS/BGP三层VPN和MPLS L2VPN,两种VPN都支持上述的三种跨域方法,采用相同的跨域理念.MPLS L3VPN跨域技术突破单个服务提供商管理域的限制,扩展了MPLS VPN架构的灵活性,使得部署方式满足了不断扩展的网络部署要求,成为一种非常成熟的VPN业务部署架构.本文以MPLS/BGP三层VPN及Option C跨域方式为例,阐述了电力数据通信网的VPN跨域实现方式.     

系统开发及开发工具

0103033实现文件上载[刊]/金文德//电脑开发与应用.—2000,13(8).—44,46(K)0103034JDBC 与 ODBC 在网络数据库开发中的应用研究[刊]/夏雨佳//计算机工程与应用.—2000,36(10).—105～107,157(C)该文研究了 ODBC 和 JDBC 的技术支持和应用方法,提出了利用 Java 语言的体系结构无关性和动态性设计 Browser/Server 模式系统,实现跨平台、兼容多种数据库的网络信息系统开发思想。参4     

基于动态多网段的数据链网络监视与管理系统的设计与实现

提出了一种可动态配置 IP 跨网段的数据链网络监视管理系统的设计与实现方法， 该系统应用层采用 B/S 与 C/S 的混合架构，网络层通过软件定义网络(SDN)集群实现数据链网内成员间的跨网段交互的动态可配置。系统功能涉及平台身份控制、方案管理、跨网段参数控制、 多网段内节点状态监视等技术。所设计方法的应用结果表明，该系统可以为数据链网络提供可靠的监视与管理服务，任意节点间路由关系动态可配置，提高数据链各节点的灵活性，满足项目应用要求。     

数据库管理系统的C／S体系结构

随着广电系统数字电视等增值、扩展业务的开展,数据库在数字信源管理、用户管理等多方面得到了越来越广泛的应用。同时,不断提升的信息承载量也对数据库系统提出了越来越高的要求。为提高系统的扩展性、安全性及整体运行性能,数据库管理系统的体系结构正由传统的二层客户机/服务器(Client/Server,C/S)模式向采用中间件技术的三层C/S模式转变。     

ASP技术下的网络办公自动化系统

当前,以传统客户/服务器模型(C/S)设计的办公自动化系统,已不能很好满足网络办公的需求,难以充分融合新技术的特点,进而无法充分发挥新管理模式的优势。而基于 Web 的网络办公自动化系统是建立在浏览器/服务器/数据库(browser/server/database)三层构架之上管理模式。ASP 技术是开发动态网络应用程序的有效工具。     

基于三层C／S体系结构数据库软件的设计

提出了三层C／S结构,并阐述了三层C／S结构各层的功能及该结构的优点,给出了基于Delphi的三层C／S体系结构的数据库设计方法。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.