LC-tank divide-by-4 injection-locked frequency divider using the second-order harmonic feedback

A low voltage, wide locking range and operation range divide-by-4 injection-locked frequency divider (ILFD) is proposed in the paper and the ILFD was fabricated in the TSMC 90 nm RF-CMOS process. The divide-by-4 ILFD uses a cross-coupled voltage-controlled oscillator (VCO) with a parallel-tuned LC resonator and a three-transistor composite that acts as a linear and nonlinear mixer. At a drain-source bias of 0.6 V and at an incident power of 0 dBm, the operation range of the divide-by-4 ILFD is 5.3 GHz, from the incident frequency 21.1 GHz to 26.4 GHz, and the percentage of operation range is 22.31%. The locking range of the divide-by-4 ILFD is 1.4 GHz, from the incident frequency 21.1 GHz to 22.5 GHz, and the percentage of locking range is 6.42%. The core power consumption is 2.58 mW. The die area is 0.86 × 0.75 mm².     

A wide-locking range 6-phase divide-by-3 injection-locked frequency divider

A 6-phase divide-by-3 CMOS injection locked frequency dividers (ILFDs) have been proposed and implemented in a 0.35 μm CMOS process. The ILFD circuits are realised with a 3-stage double cross-coupled CMOS ring oscillator. The self-oscillating voltage controlled oscillator (VCO) is injection-locked by 3th-harmonic input to obtain the division factor of 3. Measurement results show that as the supply voltage varies from 1.2 to 3.5 V, the free-running frequency is from 0.136 to 0.7 GHz. At the incident power of ?5 dBm, the locking range in the divide-by-3 mode is from the incident frequency 0.38–2.31 GHz.     

功耗低、结构紧凑的吞吐脉冲式分频器

本文设计了一个功耗低、结构紧凑的吞吐脉冲式多模分频器电路。为了节省功耗,除2/3双模预分频器中的一个D触发器受模式控制信号MC的控制,在特定模式下能自动关闭。可编程计数器和吞吐脉冲计数器中的D触发器共享以构成紧凑的结构进一步减小功耗。所设计的多模分频器采用标准65nmCMOS工艺实现,面积为28umX22um.当工作频率为988MHz时,1.2V电源电压下的分频器功耗为0.6mW。     

Wide locking range divide-by-4 LC-tank injection-locked frequency divider using series-mixers

A novel wide locking range divide-by-4 injection-locked frequency divider (ILFD) is proposed in this paper and was implemented in the TSMC 0.18 μm 1P6 M CMOS process. The divide-by-4 ILFD uses a cross-coupled voltage-controlled oscillator with a parallel-tuned LC resonator and two mixers in series to serve as an injection device. At the drain-source bias of 0.8 V and at the incident power of 0 dBm, the locking range of the divide-by-4 is 1.7 GHz, from the incident frequency 10.3–12.0 GHz, and the percentage of locking range is 15.25 %. The core power consumption is 11.98 mW. At drain-source voltage of 0.9 V, the locking range of the divide-by-4 is 2 GHz, from the incident frequency 10.1–12.1 GHz, and the percentage is 18.0 %. At drain-source voltage of 1.0 V, the locking range is 2.2 GHz (20.0 %) from 9.9 to 12.1 GHz. The die area is 0.492 × 0.819 mm².     

10～37GHzCMoS四分频器的设计

给出基于0．13μmCMOS工艺、采用单时钟动态负载锁存器设计的四分频器。该四分频器由两级二分频器级联而成。级间采用缓冲电路实现隔离和电平匹配。后仿真结果表明其最高工作频率达37GHz,分频范围为27GHz。当电源电压为1．2V、工作频率为37GHz时,其功耗小于30mW,芯片面积为0．33-0．28mm2。     

7-27GHz 动态源极耦合逻辑二分频器

本文介绍了一款高速宽带二分频器的设计与分析。设计采用动态源极耦合逻辑结构,由两级动态负载主从D触发器构成,工作频率高,功耗低。这款分频器工作范围为7~27GHz,在1.2V工作电压下最低功耗仅为1.22mW。整个频带内输入灵敏度仅为25.4dBm。设计采用90nm CMOS工艺,使用了两个片上螺旋电感,芯片面积为685um*430um。     

Ka波段具有宽锁定范围高注入灵敏度的分频器*

This paper proposes a direct injection-locked frequency divider（ILFD） with a wide locking range in the Ka-band. A complementary cross-coupled architecture is used to enhance the overdriving voltage of the switch transistor so that the divider locking range is extended efficiently. New insights into the locking range and output power are proposed. A new method to analyze and optimize the injection sensitivity is presented and a layout technique to reduce the parasitics of the cross-coupled transistors is applied to decrease the frequency shift and the locking range degradation. The circuit is designed in a standard 90-nm CMOS process. The total locking range of the ILFD is 43.8% at 34.5 GHz with an incident power of –3.5 dBm. The divider IC consumes 3.6 mW of power at the supply voltage of 1.2 V. The chip area including the pads is 0.50.5 mm2.     

应用于K波段的宽锁定范围低功耗注入锁定三倍频器

This paper presents a wide locking range and low DC power injection-locked frequency tripler for Kband frequency synthesizers application. The proposed ILFT employs a variable current source to decouple the injection signal path and the bias current so that the third harmonic of the injection signal can be maximized to enlarge the locking range. Meanwhile, a 2-bit digital control capacity array is used to further increase the output frequency locking range. It is implemented in a 130-nm CMOS process and occupies a chip area of 0.7 0.8 mm2 without pads. The measured results show that the proposed ILFT can achieve a whole locking range from 18 to21 GHz under the input signal of 4 d Bm and the core circuit dissipates only 4 m W of DC power from a 0.8 V supply voltage. The measured phase noise degradation from that of the injection signal is only 10 d B at 1 MHz offset.     

A low power, low noise figure quadrature demodulator for a 60 GHz receiver in 65-nm CMOS technology

This paper presents the design of a low power (LP) and a low noise figure (NF) quadrature demodulator with an on-chip frequency divider for quadrature local oscillator (LO) signal generation. The transconductance stage of the mixer is implemented by an AC-coupled self-bias current reuse topology. On-chip series inductors are employed at the gate terminals of the differential input transconductance stage to improve the voltage gain by enhancing the effective transconductance. The chip is implemented in 65-nm LP CMOS technology. The demodulator is designed for an input radio frequency (RF) band ranging from 10.25 to 13.75 GHz. A fixed LO frequency of 12 GHz down-converts the RF band to an intermediate frequency (IF) band ranging from DC to 1.75 GHz. From 10 MHz to 1.75 GHz the demodulator achieves a voltage conversion gain (VCG) ranging from 14.2 to 13.2 dB, and a minimum single-sideband NF (SSB-NF) of 9 dB. The measured third-order input intercept point (IIP₃) is -3.3 dBm for a two-tone test frequency spacing of 1 MHz. The mixer alone draws a current of only 2.5 mA, whereas the complete demodulator draws a current of 7.18 mA from a 1.2 V supply. The measurement results for a frequency divider, which was fabricated individually, prior to being integrated with the quadrature demodulator, in 65-nm LP CMOS technology, are also presented in this paper.     

一种新型的宽带低相位噪声2分频器

通过对各种2分频器结构的研究,提出一种新结构的D触发器。由此触发器组成的2分频器具有宽带低相位噪声的特点。与传统的动态SCL结构的D触发器相比,通过在D触发器的输入对管的耦合端口和时钟端口之间加一个开关管,扩展了工作带宽并同时保持了低的相位噪声。此芯片采用IBM 的90nm CMOS工艺。测试结果表明,此2分频器工作的频率范围为：0.05-10GHz。工作频率为10GHz时,输出信号的相位噪声在频偏1MHz处为-159.8 dBc/Hz 。工作电压为1.2V,功耗为9.12mW。核心芯片面积仅为0.008mm2。     

A novel wideband low phase noise 2:1 frequency divider

This paper describes a novel low-power wideband low-phase noise divide-by-two frequency divider.Hereby,a new D-latch topology is introduced.By means of conventional dynamic source-coupled logic techniques,the divider demonstrates a wideband with low phase noise by adding a switch transistor between the clock port and the couple node of the input NMOS pair in the D latch.The chip was fabricated in the 90-nm CMOS process of IBM.The measurement results show that the frequency divider has an input frequency range from 0.05 to 10 GHz and the phase noise is-159.8 dBc/Hz at 1 MHz offset from the carrier.Working at 10 GHz,the frequency divider dissipates a total power of 9.12 mW from a 1.2 V supply while occupying only 0.008 mm2 of the core die area.     

应用于60-GHz无线通信的全差分锁相环频率综合器

A 40-GHz phase-locked loop(PLL) frequency synthesizer for 60-GHz wireless communication applications is presented. The electrical characteristics of the passive components in the VCO and LO buffers are accurately extracted with an electromagnetic simulator HFSS. A differential tuning technique is utilized in the voltage controlled oscillator(VCO) to achieve higher common-mode noise rejection and better phase noise performance. The VCO and the divider chain are powered by a 1.0 V supply while the phase-frequency detector(PFD)and the charge pump(CP) are powered by a 2.5 V supply to improve the linearity. The measurement results show that the total frequency locking range of the frequency synthesizer is from 37 to 41 GHz, and the phase noise from a 40 GHz carrier is –97.2 d Bc/Hz at 1 MHz offset. Implemented in 65 nm CMOS, the synthesizer consumes a DC power of 62 m W, including all the buffers.     

Hybrid current conveyoroperational amplifier circuit

A high-performance hybrid transconductance amplifier circuit implemented in both inverting and non-inverting configurations is described. The circuit is based on an operational amplifier–current conveyor arrangement that produces greater accuracy than other circuit configurations.     

一种9.8-mW 1.2-GHz CMOS 低噪声正交输出频率综合器

实现了一种基于标准0.18µm CMOS工艺的应用于北斗导航射频接收机的1.2GHz频率综合器。在频率综合器中采用了一种基于分布式偏置技术实现的低噪声高线性LC压控振荡器和一种基于源极耦合逻辑的高速低开关噪声正交输出二分频器,集成了基于与非触发器结构的高速8/9双模预分频器、无死区效应的延迟可编程的鉴频鉴相器和电流可编程的电荷泵。该频率综合器的输出频率范围从1.05到1.30GHz。当输出频率为1.21GHz 时,在100-kHz和1-MHz的频偏处相位噪声分别为-98.53dBc/Hz和-121.92dBc/Hz。工作电压为1.8V时,不包括输出Buffer的核心电路功耗为9.8mW。北斗射频接收机整体芯片面积为2.41.6 mm2。     

一种新颖的双频不等分威尔金森功率分配器

给出了设计双频不等分威尔金森功分器的一种方法。该功率分配器在任意两个频点上实现任意功率分配比的同时,兼顾传统功率分配器的各项特性。给出了该功率分配器的结构以及各项设计参数的解析公式。仿真与实验结果证明了本文设计方法的有效性。     

A production insensitive compact power divider

Power dividers are inevitable components in most microwave systems. Well known topologies like Wilkinson power divider are widely studied in the literature. An “all 50 ohm power divider” is another topology presented in the some works. In this study, an all 50 ohm structure is taken as the basis and a compact-easy to implement modification the power divider is proposed. A sample structure is designed, implemented and measured to prove the topology. The decreased sensitivity to production tolerances is demonstrated by various design modifications. Comparisons with well-known topologies are given for reference.     

一个含宽带VCO 和多模正交分频器的可输出220MHz-1100MHz 频率的低噪声频率综合器

This paper presents a low phase-noise fractional-N frequency synthesizer which provides an inphase/quadrature-phase(I/Q) signal over a frequency range of 220–1100 MHz for wireless networks of industrial automation(WIA) applications. Two techniques are proposed to achieve the wide range. First, a 1.4–2.2 GHz ultralow gain voltage-controlled oscillator(VCO) is adopted by using 128 tuning curves. Second, a selectable I/Q divider is employed to divide the VCO frequency by 2 or 3 or 4 or 6. Besides, a phase-switching prescaler is proposed to lower PLL phase noise, a self-calibrated charge pump is used to suppress spur, and a detect-boosting phase frequency detector is adopted to shorten settling time. With a 200 k Hz loop bandwidth, lowest measured phase noise is 106 d Bc/Hz at a 10 k Hz offset and 131 d Bc/Hz at a 1 MHz offset. Fabricated in the TSMC 0.18 m CMOS process, the synthesizer occupies a chip area of 1.2 mm2, consumes only 15 m W from the 1.8 V power supply,and settles within 13.2 s. The synthesizer is optimized for the WIA applications, but can also be used for other short-range wireless communications, such as 433, 868, 916 MHz ISM band applications.     

83GHz InP DHBT静态分频器

A static frequency divider is presented using 0.7μm lnP DHBTs with 280 GHz ft/fmax. The divider is based on ECL master-slave D-flip-flop topology with 30 HBTs and 20 resistors with a chip size 0.62 ×0.65 mm^2. The circuits use peaking inductance as a part of the loads to maximize the highest clock rate. Momentum simulation is used to accurately characterize the effect of the clock feedback lines at the W band. Test results show that the divider can operate from 1 GHz up to 83 GHz. Its phase noise is 139 dBc/Hz with 100 kHz offset. The power dissipation of divider core is 350 mW.     

A high-efficiency low-voltage class-E PA for IoT applications in sub-1 GHz frequency range

We present and propose a complete and iterative integrated-circuit and electro-magnetic (EM) co-design methodology and procedure for a low-voltage sub-1 GHz class-E PA. The presented class-E PA consists of the on-chip power transistor, the on-chip gate driving circuits, the off-chip tunable LC load network and the off-chip LC ladder low pass filter. The design methodology includes an explicit design equation based circuit components values'' analysis and numerical derivation, output power targeted transistor size and low pass filter design, and power efficiency oriented design optimization. The proposed design procedure includes the power efficiency oriented LC network tuning, the detailed circuit/EM co-simulation plan on integrated circuit level, package level and PCB level to ensure an accurate simulation to measurement match and first pass design success. The proposed PA is targeted to achieve more than 15 dBm output power delivery and 40% power efficiency at 433 MHz frequency band with 1.5 V low voltage supply. The LC load network is designed to be off-chip for the purpose of easy tuning and optimization. The same circuit can be extended to all sub-1 GHz applications with the same tuning and optimization on the load network at different frequencies. The amplifier is implemented in 0.13 μm CMOS technology with a core area occupation of 400 μm by 300 μm. Measurement results showed that it provided power delivery of 16.42 dBm at antenna with efficiency of 40.6%. A harmonics suppression of 44 dBc is achieved, making it suitable for massive deployment of IoT devices.     

一个微波小型化超宽带高功率分配网络

为了实现微波功率分配领域对超宽带和高功率的双重应用需求,本文呈现了一个小型化超宽带高功率的悬置带线四路功率分配网络。它采用了一种超宽带功率分配结构,避免了传统Wilkinson电路带宽限制,并结合了低阻抗集成传输线的高功率容量的特点,具有小型化、超宽带、高功率、低插损的特点。仿真设计结果表明：在2-18GHz频段内,该结构的插入损耗小于0.6dB,回波损耗优于9.5dB（在2.75-18GHz内回波损耗优于15dB）,端口幅度差小于0.1dB,相位差小于1度。