Dual and tri-band bandpass filters based on novel Π-shaped resonator

A novel Π-shaped resonator is proposed, and compact dual-band and tri-band bandpass filters that meet IEEE 802.11 application requirements by using the new resonator are designed. The dual-band bandpass filter centres at 2.45 and 5.6 GHz with a simulated passband insertion loss of no more than 0.8 dB, and the tri-band bandpass filter which is got by two-path coupling achieves simulated passband insertion loss of no more than 1.1 dB. The new designs are demonstrated by experiment. The new filters have advantages of simple and compact structures, low passband insertion losses, good frequency selectivity and miniature circuit sizes. All these have prospect to be applied in future wireless communication systems.     

CMOS CCII– based on modified dual output-OTA for high frequency applications

A negative CMOS second generation current conveyor (CMOS CCII–) based on modified dual output CMOS folded cascode operational transconductance amplifier (CMOS DO-OTA) is presented. The proposed folded cascode CMOS DO-OTA with attractive features for high frequency operation such as high output impedance, wide bandwidth, high slew rate, with low power consumption is used in the realisation. The proposed CMOS DO-OTA and CMOS CCII– with high performance parameters can be used in many high frequency applications. The proposed CMOS CCII– achieves 1.37 GHz (?3 dB BW), 1.8 ns settling time, 48 V/μs slew rate, and low power consumption around 3.25 mW for ±2.5 V supply. P-Spice simulation results are included for 0.5 μm MIETEC CMOS technology.     

Novel CCII — based single-element controlled oscillators employing grounded resistors and capacitors

Novel single-element controlled oscillator circuits using two negative second-generation current-conveyors (CCII — ), four (or three) grounded capacitors and three (or four) grounded resistors are presented. The proposed circuits enjoy independent oscillation control through a single grounded passive element and independent frequency control through another single grounded passive element. Simulation and experimental results are included.     

Estimation of autoregressive fading channels based on two cross-coupled H ∞ filters

This paper deals with the on-line estimation of time-varying frequency-flat Rayleigh fading channels based on training sequences and using H _∞ filtering. When the fading channel is approximated by an autoregressive (AR) process, the AR model parameters must be estimated. As their direct estimations from the available noisy observations at the receiver may yield biased values, the joint estimation of both the channel and its AR parameters must be addressed. Among the existing solutions to this joint estimation issue, Expectation Maximization (EM) algorithm or cross-coupled filter based approaches can be considered. They usually require Kalman filtering which is optimal in the H ₂ sense provided that the initial state, the driving process and measurement noise are independent, white and Gaussian. However, in real cases, these assumptions may not be satisfied. In addition, the state-space matrices and the noise variances are not necessarily accurately estimated. To take into account the above problem, we propose to use two cross-coupled H _∞ filters. This method makes it possible to provide robust estimation of the fading channel and its AR parameters.     

Long-wavelength photodiodes based on Ga1−x InxAsySb1−y wit composition near the miscibility boundary

The possibility of using liquid-phase epitaxy to obtain Ga_1−x In_xAs_ySb_1−y solid solutions isoperiodic with GaSb near the miscibility boundary is investigated. The effect of crystallographic orientation of the substrate on the composition of the solid solutions grown in this way is examined, and the indium concentration is observed to grow from 0.215 to 0.238 in the Ga_1−x In_xAs_ySb_1−y solid phase in the series of substrate orientations (100), (111)A, (111)B. A change in the composition of the solid solution leads to a shift of the long-wavelength edge of the spectral distribution of the photosensitivity. The use of a GaSb (111)B substrate made it possible, without lowering the epitaxy temperature, to increase the indium content in the solid phase to 23.8% and to create long-wavelength photodiodes with spectral photosensitivity threshold λ _th=2.55 μm. The primary characteristics of such photodiodes are described, along with aspects of their fabrication. The proposed fabrication technique shows potential for building optoelectronic devices (lasers, LED’s, photodiodes) based on Ga_1−x In_xAs_ySb_1−y solid solutions with red boundary as high as 2.7 μm. Fiz. Tekh. Poluprovodn. 33, 249–253 (February 1999)     

Structure and optical properties of heterostructures based on MOCVD (Al x Ga1 − x As1 − y P y )1 − z Si z alloys

Epitaxial heterostructures produced by MOCVD on the basis of Al _x Ga_{1 ? x} As ternary alloys with the composition parameter x ≈ 0.20–0.50 and doped to a high Si and P atomic content are studied. Using the high-resolution X-ray diffraction technique, scanning electron microscopy, X-ray microanalysis, Raman spectroscopy, and photoluminescence spectroscopy, it is shown that the epitaxial films grown by MOCVD are formed of five-component (Al _x Ga_{1 ? x} As_{1 ? y} P _y )_{1 ? z} Si _z alloys.     

Human–robot interaction based on gesture and movement recognition

Human–robot interaction (HRI) has become a research hotspot in computer vision and robotics due to its wide application in human–computer interaction (HCI) domain. Based on the explored algorithms of gesture recognition and limb movement recognition in somatosensory interaction, an HRI model of a robotic arm is proposed for robot arm manipulation. More specifically, 3D SSD architecture is used for the location and identification of gesture and arm movement. Then, DTW template matching algorithm is adopted to trace the dynamic gestures. The interactive scenarios and interactive modes are designed for experiment and implementation. Virtual interactive experimental results have demonstrated the usefulness of our method.     

Design and analysis of firewall-penetrated scheme based on trusted host

On the basis of various firewall-penetrated technologies, a novel firewall-penetrated technology based on trusted host, which can realize the communication between penetrating host and protected host, is proposed in this paper. Meanwhile, the firewall-penetrated evaluating model and its formalized statement is also proposed by quantizing penetrated level, penetrated quality, and penetrated hiding. Finally, the firewall-penetrated technology based on trusted host is analyzed under the firewall-penetrated evaluating model, and the experimental results show that this technology has obvious penetrating effect and high penetrating quality.     

New semi-conducting rotaxane based on β-cyclodextrin and anthracene moieties

A new rotaxane (BPAAn/β-CD), consisting of an anthracene-based semi-conducting material (BPAAn) encapsulated into β-cyclodextrin (β-CD), has been synthesized via the Williamson reaction in solvent-free conditions. The supramolecular structure of the compound was confirmed by NMR and FT-IR spectroscopies. The optical and morphological properties of this organic material were investigated by UV–visible absorption, photoluminescence spectroscopy and atomic force microscopy. BPAAn/β-CD film has an optical gap of 2.9 eV and exhibits green photoluminescence. An optical gap of 2.9 eV was estimated from the absorption edge of the rotaxane thin film. The BPAAn/β-CD exhibits a blue photoluminescence in dilute solution; whereas, a green emission was observed in the solid state, due to the π–π interaction in the anthracene moieties. The rotaxane shows a significantly enhanced PL quantum yield and improved film quality in comparison with the free BPAAn. The HOMO and LUMO levels were estimated using cyclic voltammetry analysis, and show enhanced electron affinity of the BPAAn in its complexed form. A single-layer device with the configuration [ITO/rotaxane/Aluminum] has been elaborated and showed low turn-on voltage of 5 V.     

New CCII and ICCII Based Realizations of L-C and L-R Mutators

New realizations of Chua L-C and L-R mutators using current conveyors (CCII) and inverting current conveyors (CCII) are introduced. Two realizations are available in the literature using CCII for each of the types of L-C and L-R mutators. For the type 1a L-R mutator three new realizations using CCII and ICCII are introduced to complete a family of four realizations. For the type 1b L-R mutator three new realizations using CCII and ICCII are introduced to complete a family of four realizations. For the type 2a L-C mutator fifteen new realizations using CCII and ICCII are introduced to complete a family of sixteen realizations. For the type 2b L-C mutator fifteen new realizations using CCII and ICCII are introduced to complete a family of sixteen realizations. For the type 2c L-C mutator eight new realizations using CCII and ICCII are introduced to complete a family of sixteen realizations. Finally for the types 2a and 2b L-R mutator fifteen new realizations using CCII and ICCII are given for each type to complete a family of sixteen realizations. Although this is a review paper and is partially tutorial it includes many new realizations of L-C and L-R mutators.     

Luminescence of multilayer structures based on InAsSb at λ = 6−9 μm

Multilayer gradient InAs_1?xSb_x/…/InAs_1?x?ySb_xP_y/n-InAs structures emitting in a wavelength range of 6 to 9 μm during injection, extraction, and optical pumping were studied.     

A New Current-Mode Current-Controlled Universal Filter Based on CCCII(±)

This paper proposes a new current-mode current-controlled single-input multiple-output type universal filter using non-inverting and inverting second generation current-controlled conveyors (CCCII(±)s). The proposed circuit employs four CCCII(±)s and two grounded capacitors, and it can simultaneously realize lowpass, bandpass, highpass, bandstop and allpass filter outputs. The circuit offers an independent electronic control of the natural angular frequency (ω ₀) and quality factor (Q) by means of adjusting the bias current of the CCCII(±)s. The parameter sensitivities are all very low. Moreover, a high Q-value filter can be easily obtained by adjusting the ratio of two bias currents. PSPICE simulation results at the natural frequency of 1.27 MHz are given to demonstrate the advantages of the proposed circuit. This work was supported by National Natural Science Foundation of China under No.60676021.     

Research and design of wap service system based on MISC platform

1 Introduction With the introduction of high mobile handsets with increasingly powerful functions and the applications of WAP2.0 with considerably novel technologies, a series of diverse hot WAP services have come into being and have been successfully lau…     

Modeling and analysis of self-similar traffic source based on fractal-binomial-noise-driven Poisson process

~~Modeling and analysis of self-similar traffic source based on fractal-binomial-noise-driven Poisson process1. Will E L, Murad S T, Walter W, et al. On the self-similarity nature of Ethernet traffic (extended version). IEEE/ACM Transactions on Networking…     

Design and implementation of high-speed real-time data acquisition system based on FPGA

1 Introduction Electromagnetic radiation will be generated when an electric device, especially video display unit, works, and can give rise to electromagnetic leakage. When the electromagnetic leakage is recognized, the available information can be recove…     

Photoelectric and optical properties of Schottky-barrier photodiodes based on IrSi–Si

The basic properties in the Schottky-barrier photodiodes (SBPDs) can be reduced to photon absorption in the silicide layer and internal photoemission of charge carriers from a metal to a semiconductor. Therefore, the quantum efficiency and photoresponse of these photodiodes (PDs) are primarily determined by electronic and optical processes in the metal silicide rather than in the semiconductor. This implies that, to a first approximation, the SBPD photoresponse is independent of semiconductor parameters such as the doping level, degree of compensation of impurities, and minority-carrier lifetime. The main reasons for photoresponse nonuniformity in multielement detector arrays are thereby ruled out.     

Visible–infrared person re-identification based on key-point feature extraction and optimization

Feature extraction for visible–infrared person re-identification (VI-ReID) is challenging because of the cross-modality discrepancy in the images taken by different spectral cameras. Most of the existing VI-ReID methods often ignore the potential relationship between features. In this paper, we intend to transform low-order person features into high-order graph features, and make full use of the hidden information between person features. Therefore, we propose a multi-hop attention graph convolution network (MAGC) to extract robust person joint feature information using residual attention mechanism while reducing the impact of environmental noise. The transfer of higher order graph features within MAGC enables the network to learn the hidden relationship between features. We also introduce the self-attention semantic perception layer (SSPL) which can adaptively select more discriminant features to further promote the transmission of useful information. The experiments on VI-ReID datasets demonstrate its effectiveness.     

Photocatalytic Coupling of CH4 and CO2 to Ethanol on Asymmetric Ce−O−Zn Sites

Partial oxidation of methane (CH₄) to value-added products is significantly challenging due to the highly inert chemical property of CH₄ at ambient conditions and easy over-oxidation into carbon dioxide (CO₂) or carbon monoxide (CO) at elevated temperatures and pressures. Targeting this challenge, the efficient photocatalytic coupling of CO₂ and CH₄ into ethanol is demonstrated, using a cerium (Ce)-doped zinc oxide (ZnO) photocatalyst with abundant Ce─O─Zn units. Under light illumination, CO₂ is adsorbed on the Ce atoms and photo-reduced to CO, and CH₄ is captured by the Zn atoms and photo-oxidized to hydroperoxymethane (CH₃OOH). The close proximity of Ce and Zn atoms on the Ce─O─Zn units allowed to further efficiently couple the as-formed CO and CH₃OOH into ethanol. Without additional Oxygen (O₂) oxidant or sacrificial regent, the ethanol production rate reached 580 µmol g⁻¹ h⁻¹, substantially exceeding previously reports on photocatalytic CH₄ oxidation. This work features to convert two greenhouse gases into value-added chemicals with adjacent and asymmetric reaction sites, suggesting attractive potentials for CH₄ and CO₂ utilization.     

Electrical and structural properties of PHEMT heterostructures based on AlGaAs/InGaAs/AlGaAs and δ-doped on two sides

The pseudomorphic AlGaAs/InGaAs/AlGaAs heterostructure δ-doped with silicon on both sides and used for fabrication of high-power transistors is optimized to obtain a high concentration n _s and mobility of two-dimensional electron gas in the quantum well (n _s ≈ 3 × 10¹² cm^?2). Electrical and structural characteristics of the samples grown by molecular-beam epitaxy with various doping levels are studied. It is shown that the mobility and concentration of electrons varies as doping level is increased and the subbands of dimensional quantization are sequentially filled. In order to analyze the distribution of electrons in subbands of the heterostructure, the Shubnikov-de Haas oscillations at the liquid helium temperature were studied. The quality of the heterostructure layers was assessed using the method of X-ray diffraction. The data of photoluminescence spectroscopy are in good agreement with the results of calculations of the band structure.