Design of a new low-phase-noise millimetre-wave quadrature voltage-controlled oscillator

This paper presents a new circuit topology of millimetre-wave quadrature voltage-controlled oscillator (QVCO) using an improved Colpitts oscillator without tail bias. By employing an extra capacitance between the drain and source terminations of the transistors and optimising circuit values, a low-power and low-phase-noise (PN) oscillator is designed. For generating the output signals with 90° phase difference, a self-injection coupling network between two identical cores is used. The proposed QVCO dissipates no extra dc power for coupling, since there is no dc-path to ground for the coupled transistors and no extra noise is added to circuit. The best figure-of-merit is ?188.5, the power consumption is 14.98–15.45 mW, in a standard 180-nm CMOS technology, for 58.2 GHz center frequency from 59.3 to 59.6 GHz. The PN is ?104.86 dBc/Hz at 1-MHz offset.     

三级Colpitts微波混沌振荡器的仿真研究

提出一种具有3级结构的微波Colpitts混沌振荡器,这种新的结构通过增加共基极组态的三极管抑制了电路中三极管寄生电容的负面影响,以提高微波Colpitts混沌振荡器的基本振荡频率和频带宽度。借助Matlab和HSPICE软件对新结构的理想非线性动力学模型和电路进行了时域和频域分析。选用截止频率为9 GHz的三极管时,模型的电路仿真结果表明,新结构的基本振荡频率可达到4.9 GHz;信号的频谱分布更为均匀平坦,10 dB带宽可以达到4.9 GHz。     

A 20MHz Low Phase-Noise 0.35μm CMOS Crystal Oscillator

The design procedure of a CMOS process integrating Colpitts cr(ystal oscillator is described in detail by using the tools of Matlab and advanced design system (ADS). The small-signal analysis is performed both in the viewpoint of negative resistance and positive feedback. The analysis of condition for reliable start-up of oscillation and design guides for low phase noise is introduced. The measured phase noise is (172dBc/Hz@10 kHz and the power dissipation is 0.36 mW at power supply 3V.     

A 20MHz Low Phase-Noise 0.35μm CMOS Crystal Oscillator

The design procedure of a CMOS process integrating Colpitts crystal oscillator is described in detail by using the tools of Matlab and advanced design system (ADS). The small-signal analysis is performed both in the viewpoint of negative resistance and positive feedback. The analysis of condition for reliable start-up of oscillation and design guides for low phase noise is introduced The measured phase noise is -172dBc/Hz@10 kHz and the power dissipation is 0.36 mW at power supply 3 V.     

53-GHz平衡式考毕兹振荡器的设计与测试

A 53 GHz Colpitts oscillator implemented in a SiGe：C BiCMOS technology is presented. Limited by a 26.5 GHz frequency analyzer, the oscillator was measured indirectly through an on-chip mixer. The mixer downconverted the oscillating frequency to an intermediate frequency （IF） below 26.5 GHz. By adjusting the local oscillating （LO） frequency and recording the changes of IF frequency, the oscillator＇s output frequency （RF） was determined. Additionally, using phase noise theory of mixers, the oscillator＇s phase noise was estimated as -58 dBc/Hz at 1 MHz offset and the output power was about -21 dBm. The chip is 270 ×480μm in size.     

不同阶混沌Colpitts电路系统的同步

针对四阶和三阶混沌Colpitts电路系统,利用Active方法对系统的同步进行了研究,实现了不同阶Colpitts电路系统在超高频域内的主从混沌同步。同时对系统在存在内部参数扰动和外部干扰的情况下,分析了控制器的鲁棒性。最后通过数值示例进行仿真,对文中论述进行了强有力的验证。     

Colpitts混沌电路的研究

对典型Colpitts振荡电路进行分析,并进行了Pspice仿真,观察状态变量随参数变化的动力学行为及频谱分布情况.对改进型Colpitts电路进行仿真,对比仿真结果可知正是寄生电容CCB影响了典型Colpitts电路产生高频混沌信号.     

RC相移式振荡器的负阻法分析

利用负阻法推出了RC相移式振荡器的振荡条件和振荡频率公式，其结果与传统法推出的完全一致，且其物理概念更为清晰。     

一种高性能时钟晶体振荡器电路设计

设计了一种用于时钟芯片的Pierce晶体振荡器,通过对传统结构的改进,增加了振幅控制结构和输出频率校准电路,提高了输出频率、振幅的稳定性和输出频率的精度,降低了功耗。同时对电路的工作原理进行了理论分析,电路采用CSMC 0.5 μm-5 V CMOS工艺实现,通过仿真结果验证,显示该设计达到了技术指标要求。     

高频正弦波振荡器教学方法的一些探索

本文阐述了通过多媒体手段,在"通信电子线路"课程正弦波振荡器章节的教学中导入演示实验的方法,加深了学生对课本知识的理解。学生在经历课程实验时可以有机地联结新旧知识,理论联系实际,以及在工程上经历发现问题、分析问题和解决问题的过程。视觉教学素材信息量大,也可提高课堂教学效率。     

微波Colpitts混沌电路实验研究

本文首先介绍了Colpitts电路的数学模型，给出了基于预设定频谱分布的Colpitts混沌电路中主要电路参数的设计方法；然后对工作在微波频段的Colpitts混沌电路进行了实验研究，验证了给出的电路参数设计方案；最后对实验过程中的电路调试方法，电路频谱宽度的瓶颈问题，电路功耗问题以及进一步的工作进行了讨论。     

宇称时间对称光电振荡器技术研究进展

随着微波技术的不断进步,提升本振信号源的频率稳定度及相位噪声指标的需求尤为迫切.光电振荡器技术因具备极低的相位噪声以及良好的频率拓展性吸引了研究人员的广泛关注.但光电振荡器内部的长距离光纤大量增加了输出信号的边带,如何解决单模输出与相位噪声之间的矛盾成了光电振荡器领域研究的热点.宇称-时间对称方法在保证输出信号相位噪声的前提下可极大地优化输出信号的边带抑制,受到国内外研究团队的广泛关注.文章在对宇称-时间对称光电振荡器的工作原理和特性进行阐述和分析的基础上,对国内外研究团队设计的宇称-时间对称光电振荡器结构和方案进行了总结,分析比较了各种方案的基本原理及性能指标,讨论了宇称-时间对称光电振荡器技术的未来发展方向.     

宽带连续混沌波形信号的研究与设计

针对现代战场对信息信号低截获概率的要求,分析研究了宽带连续混沌信号的低截获性,并对失谐耦合型考必兹宽带混沌电路进行研究,并分析比较了不同耦合方式的Colpitts振荡器电路,同时对该混沌电路产生的连续混沌波形信号做出分析,最后仿真出了该混沌信号的模糊函数图。仿真结果显示该混沌信号基底分布均匀,近似于理想的"图钉型",具有良好的距离和速度分辨率的同时,也具有更强的杂波抑制能力。     

Barkhausen criterion for pulse oscillators

This work presents the study of the conditions for forming periodic oscillations of non-sinusoidal pulse waveforms in oscillatory systems consisting of a linear frequency-dependent circuit and an active nonlinear element. Based on Barkhausen stability criterion, an application under the frequencies of all harmonics of output oscillations is discussed.     

4阶Colpitts MOS管混沌电路设计

仅增加一个线性电容并联于单电感两端,使3阶Colpitts MOS管电路成为4阶混沌电路。该电容与电感形成选频谐振子电路,便于产生混沌信号,可扩展存在混沌的参数取值范围。结合新电路归一化状态方程,分别计算电感电流和三只电容端压的4个李指数,探讨关键参数对该混沌电路的影响。对比MATLAB仿真数据与实测单MOS管电路的输出,一致性地显示4阶混沌特有的混沌吸引子已经实现。     

负阻提升的微波混沌振荡器的设计

将负阻提升技术引入到混沌振荡器的设计中,通过理论推导、数值计算和测试验证来优化电路结构,提供参数选取规则,从理论和实验两方面验证,在双电感的比值达到最优值时振荡器负阻能够得到大幅提升。并基于负阻提升技术提出了双电感结构的微波Colpitts 混沌振荡器。新结构电路的最高混沌振荡基频为1.78 GHz,较经典电路提升了39%;带宽达到4.60GHz(0.80～5.40 GHz),较经典电路提升了119%。测试结果表明,优化的双电感结构能有效提升混沌振荡基频和带宽。