Improved Buffer Amplifier for Incorporation Within a Biopotential Electrode

An amplifier for an active electrode is described which requires only a two-conductor connecting cable, is current limiting for patient safety, and has essentially unity voltage gain. In addition, the output impedance is lower and the input impedance has more adjustment latitude than is possible with a conventional source follower.     

High-gain wideband error amplifier topology for DC-DC buck converter switching at 20 MHz

A wideband error amplifier topology with increased DC-gain and reduced quiescent current consumption is presented. The reduction in quiescent current consumption is achieved by lowering the output stage current, which helps to increase the output impedance and hence the overall DC-gain of the amplifier. Simulation results show that the proposed topology has 60 dB DC gain and 540 MHz unity gain bandwidth with 450 muA quiescent current consumption. The experimental result of the loop-gain of a high-frequency (20 MHz) DC-DC buck converter that utilises the proposed topology also confirms the simulation results.     

一种带增益提高技术的高增益CMOS运算放大器的设计

给出了一种用在高速高精度流水线型模数转换器中的具有高增益和高单位增益频率的全差动CMOS运算放大器的设计,电路结构主要采用折叠式共源共栅结构,并采用增益提高技术提高放大器的增益。共模反馈电路由开关电容共模反馈电路实现。模拟结果显示,其开环直流增益可达到106 dB,在负载电容为2 pF时单位增益频率达到了167 MHz,满足了对模数转换器的高速度和高精度的要求。     

The effect of excess gate current on input impedance of a JFET amplifier

When JFET is used as an amplifier, it should be regarded that the effect of excess gate current on the input impedance is changed by gain of the amplifier. The input impedance or conductance with gain of the JFET amplifier is experimentally analyzed applying small signal equivalent circuit.     

A feedforward technique with frequency-dependent current mirrorsfor a low-voltage wideband amplifier

A feedforward technique using frequency-dependent current mirrors for a low-voltage wideband amplifier is presented. In the conventional single-stage wideband amplifiers, the folded cascode structure is used. However, the common-gate transistor requires an additional V_{DS sat} and reduces the available output voltage range. In this study the cascode structure is avoided; instead, a frequency-dependent current mirror, whose input impedance becomes higher for a higher frequency, is used to form the feedforward path from the input of the current mirror with a feedforward capacitor. This technique is effective to improve a 100 MHz-1 GHz frequency characteristic of the amplifier. The amplifier has been fabricated using the standard 0.8 μm CMOS process. The phase margin is improved from 46-66° without sacrificing the unity gain frequency of 133 MHz compared with the amplifier without this technique. The amplifier operates at 2.5 V power supply voltage and consumes 12 mW     

低压工作的轨到轨输入／输出缓冲级放大器

本文提出了一种低压工作的轨到轨输入／输出缓冲级放大器。利用电阻产生的输入共模电平移动,该放大器可以在低于传统轨到轨输入级所限制的最小电压下工作,并在整个输入共模电压范围内获得恒定的输入跨导;它的输出级由电流镜驱动,实现了轨到轨电压输出,具有较强的负载驱动能力。该放大器在CSMCO．6-μmCMOS数模混合工艺下进行了HSPICE仿真和流片测试,结果表明：当供电电压为5V,偏置电流为60uA,负载电容为10pF时,开环增益为87．7dB,功耗为579uw,单位增益带宽为3．3MHz;当该放大器作为缓冲级时,输入3VPP10kHz正弦信号,总谐波失真THD为53．2dB。     

Unity direct chain with feedback series impedance based innovative negative group delay circuit

An innovative negative group delay (NGD) circuit theory on unity direct chain (UDC) topology is developed in this paper. The NGD UDC cells are based on the operational amplifier adder with feedback series impedance. Innovative topologies of high-pass NGD UDC cell composed of RL-series network, all-pass RC-parallel network and low-pass RC-series network are identified. It is a first time that all-pass NGD original topologies are defined. NGD analyses and synthesis methods of each NGD UDC cells are provided. The UDC cell based NGD functions are validated with SPICE simulations. The proofs-of-concept (POC) of UDCs behave as all-pass and low-pass NGD functions with group delay equal to −1 ms at very low frequencies. The low-pass NGD cut-off frequency is 424 Hz. The high pass NGD circuit generates −1 µs at the optimal NGD frequency of about 5.15 kHz. Further analysis of the operational amplifier gain and bandwidth effects is performed. The operational amplifier gain affects significantly the NGD level and bandwidth for the all considered UDC cells. Nevertheless, only the RC-parallel feedback based UDC cell is particularly sensitive to the operational bandwidth.     

Comment on `Sallen and Key filter networks with amplifier gain larger than or equal to unity'

Refers to an article by G. S. Moschytz (see abstr. B6114 of 1968) that gives consideration to the realization of a second-order transfer function of specified form through utilization of RC elements plus a noninverting operational amplifier. Moschytz claims in the abstract that he has presented a suitable realization, a modified Sallen and Key network, that contains a noninverting amplifier having a gain that can always be made greater than or equal to unity. Such a gain then permits one to incorporate a noninverting operational amplifier into the design. This correspondence shows that there exists a subclass of second-order transfer functions that, when realized by Moschytz's realization procedure, results in a gain constant that is less than unity for all values of the available parameters. It is then not possible to incorporate a noninverting operational amplifier without altering the network structure. A simple modification of Moschytz's work is presented that assures the existence of a realization that includes a noninverting operational amplifier.     

The use of current amplifiers for high performance voltage applications

A current amplifier is used to realize a voltage amplifier having an improved high frequency response and slew rate capability. It is shown that the closed loop bandwidth is independent of the closed loop voltage gain. The design and application of a unity gain and a high gain current amplifier to voltage signal processing circuits are given. The results demonstrate an efficient use of the inherent frequency response capabilities of the active devices in the circuit to achieve the amplification of high frequency and large amplitude voltage signals.     

一种采用共栅频率补偿的轨到轨输入/输出放大器

提出了一种采用共栅频率补偿的轨到轨输入/输出放大器,与传统的Miller补偿相比,该放大器不仅可以消除相平面右边的低频零点,减少频率补偿所需要的电容,还可获得较高的单位增益带宽.所提出的放大器通过CSMC 0.6μm CMOS数模混合工艺进行了仿真设计和流片测试:当供电电压为5V,偏置电流为20μA,负载电容为10pF时,其功耗为1.34mW,单位增益带宽为25MHz;当该放大器作为缓冲器,供电电压为3V,负载电容为150pF,输入2.66 Vpp10kHz正弦信号时,总谐波失真THD为-51.6dB.     

High-Gain Amplifiers With Amorphous-Silicon Thin-Film Transistors

This letter demonstrates amplifier design with amorphous-hydrogenated-silicon thin-film transistors (TFTs) for high dc gain. High dc gain is achieved by using positive feedback to improve load impedance. The transfer characteristics of the amplifier are resistant to threshold voltage shift in the TFTs.     

一种基于PWM的新型误差放大器的设计

设计了一款高增益、宽带宽、输出摆幅可控制的新型误差放大器.通过新增A2、A3两个比较器器模块,误差放大器的输出摆幅可以随着控制端输入电压Vr的不同进行调整,增加了电路应用的灵活性.经过CHMC SB45工艺验证,所设计的蟛罘糯笃魇涑龅偷缙轿猇r,高电平为Vr+2v,开环增益为80 dB,单位增益带宽为11.9 MHz.该误差放大器已经应用到了蜳WM芯片中,使得PWM最大、最小占空比可调,大幅提升了芯片系统的整体性能.     

高性能折叠式共源共栅运算放大器的设计

折叠式共源共栅结构能够提供足够高的增益,并且能够增大带宽、提高共模抑制比和电源电压抑制比.基于Chartered 0.35 μm工艺,设计了一种折叠式共源共栅结构的差分输入运算放大器,给出了整个电路结构.Spectre仿真结果表明,该电路在3.3V电源电压下直流开环增益为121.5dB、单位增益带宽为12 MHz、相位裕度为61.4°、共模抑制比为130.1dB、电源电压抑制比为105 dB,达到了预期的设计目标.     

一种增益提升和摆率增强的电流镜放大器

针对低压低功耗条件下传统电流镜运算放大器电压增益和摆率严重降低的问题,提出了一种新型增益提升和摆率增强的CMOS电流镜放大器,并对其小信号增益和摆率进行了详细分析。理论分析表明,在不影响单位增益频率和相位裕度等小信号特性的同时,极大地提高了增益和摆率。仿真结果表明,与传统的CMOS电流镜放大器相比,该新型CMOS电流镜放大器的增益提高了15 dB,正、负摆率分别提高到传统放大器的146倍和187倍。     

Output Impedance Shaping for Frequency Compensation of MOS Audio Power Amplifiers

A frequency compensation technique for MOS audio power amplifiers is presented that allows the frequency compensation capacitors around the power transistors to be smaller than the circuit parasitics without power or stability penalty. Stability is analysed by inspecting the output impedance of the closed loop amplifier, instead of the traditional open-loop gain. By degenerating the gain of the penultimate stage, the output impedance is shaped such that the stability of the audio amplifier is guaranteed for complex loudspeaker loads. The realized amplifier features a THD of 0.005% @ (1 kHz, 10 W), an SNR of 110 dB(A), and stable operation for any passive load up to 50 nF.      

Biphase amplifier for precision controlled rectification and polarlogic operations

A biphase amplifier is a positive-negative controlled unity gain amplifier. Its circuit is simple but very useful in the fields of control, instrumentation, and communications. The use of a biphase amplifier for some novel applications, e.g. polar logic operations and precision controlled rectifications, is described. The circuits described were experimentally tested and found to be quite satisfactory     

A Differential CMOS Current-Mode Variable Gain Amplifier with Digital dB-Linear Gain Control

A novel CMOS variable gain amplifier operating on current signals with a dB-linear gain control is presented. The gain control is achieved by multiplying a digitally synthesized exponentially varying control current signal by a differential input signal in the current domain. A current amplifier at the output sets the gain to the desired level. Current-mode operation allows for a reduced supply voltage by minimizing the voltage swing at the low impedance nodes of the circuit. Multiple circuit realizations for various blocks are presented allowing for designs meeting different constraints. Experimental realization of the variable gain amplifier shows the validity of the presented approach.     

A NIC with Impedance Scaling Properties Using Unity Gain Cells

A novel negative impedance converter (NIC) is proposed. This configuration is based on unity gain cells (a cascade of current and voltage followers with unity gains). The proposed circuit has wide band impedance scaling property, and it is suitable for practical implementation of realizing high-negative-valued passive components.     

Millimeter-Wave Power Amplifier Based on Coaxial-Waveguide Power-Combining Circuits

A millimeter-wave power amplifier based on a coaxial-waveguide power-combining circuit is presented in this paper. A coaxial stepped impedance transformer is used to provide an impedance transition from the 50- $Omega$ input coaxial line to the oversized coaxial waveguide, and its equivalent-circuit model has also been developed. A Ka-band four-device coaxial-waveguide power amplifier is fabricated and tested. The 10-dB return loss bandwidth of the fabricated amplifier is from 27.5 to 40 GHz, and the power amplifier has 17–25.9 dB gain over a wide bandwidth from 26 to 38 GHz. The measured output power at 1-dB gain compression is about 26.6 dBm at 30 GHz, with a power-combining efficiency of about 90%.      

Distributed amplification: A new approach

A general formula is derived for gain of a distributed amplifier using nonuniform lines but with image impedance match at each connection. A study of the gain formula shows that the rise of gain can be eliminated by having different propagation functions for the sections. Thus a new method of constructing amplifiers having constant gain is obtained. The new amplifier also shows pronounced improvement in transient response. In order to verify some of the theoretical predictions, an experimental amplifier of this type was built, and its characteristics studied. It is found that the theoretical calculations and the experimental results are nearly matched.