MOS Integrated silicon pressure sensor

An MOS integrated silicon-diaphragm pressure sensor has been developed. It contains two piezoresistors in a half-bridge circuit, and a new simple signal-conditioning circuit with a single NMOS operational amplifier. The negative temperature coefficient of the pressure sensitivity at the half-bridge is compensated for by a positive coefficient of the variable-gain amplifier with a temperature-sensitive integrated feedback resistor. The sensor was fabricated using the standard IC process, except for the thin diaphragm formation using the N2H4. H2O anisotropic etchant. Tile silicon wafer was electrostatically adhered to the glass plate to minimize induced stress. The -1750 ppm/°C temperature coefficient of sensitivity at the half-bridge was compensated for to less than +190 ppm/°C at the amplifier output in the 0- 70°C range. A less than 20-mV thermal-output offset shift was also Obtained after 26-dB amplification in the same temperature range.     

A 0.003-mm2, 0.35-V, 82-pJ/conversion ultra-low power CMOS all digital temperature sensor for on-die thermal management

In this paper, a 0.35 V, 82 pJ/conversion ring oscillator based ultra-low power CMOS all digital temperature sensor is presented for on-die thermal management. We utilize subthreshold circuit operation to reduce power and adopt an all-digital architecture, consisting of only standard digital gates. Additionally, a linearization technique is proposed to correct the nonlinear characteristics of subthreshold MOSFETs. A bulk-driven 1-bit gated digitally controlled oscillator is designed for the temperature sensing node. Also, a 1-bit time-to-digital converter is employed in order to double the fine effective resolution of the sensor. The proposed digital temperature sensor has been designed in a 90-nm regular V _T CMOS process. After a two-point calibration, the sensor has a maximum error of ?0.68 to +0.61 °C over the operating temperature range from 0 to 100 °C, while the effective resolution reaches 0.069 °C/LSB. Under a supply voltage of 0.35 V, the power dissipation is only 820 nW with the conversion rate of 10K samples/s at room temperature. Also, the sensor occupies a small area of 0.003 mm².     

Monolithic pressure-flow sensor

A new silicon-based monolithic pressure-flow sensor has been developed. Its operation is based on the piezoresistive effect for pressure sensing and heat transfer for flow sensing. The sensor chip has a thermal isolation structure that is made of an oxidized porous silicon membrane. This structure thermally isolates the heating element located on the membrane from the rim of the chip. The sensor, in which the chip was mounted on a wall of an acrylate plastic pipe, was designed for biomedical applications. Measurements were made at pressures of 0-300 mmHg, water flow rates of 0-7 1/min, and fluid temperatures of 25-45°C. The temperature difference between the heating element and the fluid temperature sensing element was kept at 5°C. The sensor showed a pressure sensitivity of 1.32 µV/mmHg for 1-mA current supplied, a nonlinearity of 0.5 %F.S. for pressure sensing, an accuracy of ±10 %F.S. for flow sensing, and 90-percent response time of below 100 ms for flow sensing. The sensor was applied to the simultaneous measurements of pressure and flow rate in pulsedflow experimental systems.     

Nano Watt CMOS temperature sensor

In this paper, an ultra-low power embedded full CMOS temperature sensor based on sub-threshold MOS operation is designed in a 0.18 μm CMOS technology. It focuses on temperature measurement using the difference between the gate-source voltages of transistors operated in sub-threshold region that is proportional to absolute temperature. By using the proposed scheme the wide range supply voltage of 0.6–2.5 V with inaccuracy of +0.55 °C/V and total power consumption of merely 7 nW at 120 °C is achieved. The performance of the sensor is highly linear and the predicted temperature error is ±2 °C in the range of 10–120 °C. The sensor occupies a small area of 67 × 31 μm². Ultra-low power consumption of the sensor illustrates proper operation for low power applications such as battery powered portable devices, passive RFID tags and wireless sensor network applications.     

A batch-fabricated silicon capacitive pressure transducer with low temperature sensitivity

A batch-fabricated solid-state capacitive pressure transducer has been developed using silicon integrated-circuit technology. The fabricated devices exhibit a dynamic range of 350 mmHg and a pressure sensitivity of about 1100 ppm/mmHg. The temperature coefficient of zero-pressure offset is about +50 ppm/°C (less than 0.05 mmHg/°C) and the temperature coefficient of pressure sensitivity over the -20 to +50°C temperature span is about +275 ppm/°C (less than 0.04 mmHg/°C) when the device is used with an open or vacuum-sealed reference cavity. These temperature coefficients are substantially lower than those of previously reported monolithic devices and are low enough that expensive temperature trims can be eliminated for many applications.     

A high-precision system of fiber Bragg grating temperature sensing demodulation based on light power detection

A system of fiber Bragg grating (FBG) temperature sensing demodulation based on light power detection is proposed in this paper. Compared with the traditional demodulation method based on wavelength scanning, light power detection is more direct and avoids the use of spectrometer. Moreover, the light power in the system is converted into the electrical signal by the receiver optical subassembly (ROSA) and converted to the digital signal. The micro controller unit (MCU) processes the digital signal to realize the real-time temperature monitoring, which avoids the use of optical power meter (OPM). With the advantages of simple structure and low cost, the system is portable and practical. The experimental results show that the linearity coefficients R-square between light power and the sampling voltage are 0.999 08 and 0.998 93 in the temperature range from 10 °C to 85 °C, respectively. According to the results, the proved sensor has a repeatability error of 1%, a linearity error of 1.35%, and a hysteresis error of 0.7%, which indicates that the system is of high stability and high precision. The experimental results are consistent with the theory, which verifies the system''s feasibility.     

Wide Dynamic Range CMOS Amplifier Design for RF Signal Power Detection via Electro-Thermal Coupling

A differential temperature sensor for on-chip signal and DC power monitoring is presented for built-in testing and calibration applications. The amplifiers in the sensor are designed with class AB output stages to extend the dynamic range of the temperature/power measurements. Two high-gain amplification stages are used to achieve high sensitivity to temperature differences at points close to devices under test. Designed in 0.18 μm CMOS technology, the sensor has a simulated sensitivity that is tunable up to 210 mV/°C with a corresponding dynamic range of 13 °C. The sensor consumes 2.23 mW from a 1.8 V supply. A low-power version of the sensor was designed that consumes 1.125 mW from a 1.8 V supply, which has a peak sensitivity of 185.7 mV/°C over a 8 °C dynamic range.     

Fiber-Optic Instrument for Temperature Measurement

A practical fiber-optic measurement instrument for temperature was constructed consisting of a small sensor responding to optical absorption change in a semiconductor, and a unique signal processing system with two different-wavelength light emitting diodes (LED's). The fiber-optic sensor with a semiconductor chip is quite small, very sensitive, highly reliable, and easy to manufacture at low cost. The most outstanding feature of this system is that it is free from optical-stray-loss. The accuracy of about +-1° and the response time of about 2 s were obtained in the temperature range from -10° C to 300°C.     

Digital optical fiber point sensor for high-temperature measurement

The development and performance of a high-temperature optical fiber point sensor based on fluorescence decay time of a chromium-doped material are reported. The device exploits a novel digital signal processing scheme for decay time measurement. It is based on a modified phase-sensitive-detection technique with the phase locked to a fixed value and the modulation frequency tracking the measured decay time. The sensor was calibrated in the temperature range from -25 to 500°C with a 0.1°C resolution. Remarkable features are the system immunity to fluorescent intensity losses and the long-term stability, showing a maximum drift of 0.3°C over more than 600 h     

基于180nm COMS工艺的低功耗温度传感器电路设计

为降低温度传感器的功耗,提出一种结构简单的片上温度-频率转换器电路。该转换器能够根据与绝对温度成比例（proportional to absolute temperature, PTAT）的电流检测出温度,利用源极耦合多谐振荡器电路,将温度等效PTAT电流转换成频率。提出的电路采用标准180nm CMOS技术设计,面积约为0.061 mm2。通过多次实际测量,结果显示：当电源电压为0.8 V ±10%时,该温度传感器能够在?43 °C~+85 °C的温度范围内良好工作,并且经过单点校正之后,最大温度误差小于±1 °C。当电源电压为0.8 V时,+85 °C条件下的平均功率损耗仅为500 nW。     

Study of a high-temperature and high-pressure FBG sensor with Al2O3 thin-wall tube substrate

A fiber Bragg grating （FBG） high-temperature and high pressure sensor has been designed and fabricated by using the Al2O3 thin-wall tube as a substrate. The test results show that the sensor can withstand a pressure range of 0-45 MPa and a temperature range of-10-300 ℃, and has a pressure sensitivity of 0.0426 nm/MPa and a temperature sensitivity of 0.0112 nm/℃     

An X-band 22.5°/45° digital phase shifter based on switched filter networks

The design approach and performance of a 22.5°/45°digital phase shifter based on a switched filter network for X-band phased arrays are described. Both the MMIC phase shifters are fabricated employing a 0.25μm gate GaAs pHEMT process and share in the same chip size of 0.82×1.06 mm². The measurement results of the proposed phase shifters over the whole operating frequency range show that the phase shift error is less than 22.5°±2.5°, 45°±3.5°, which shows an excellent agreement with the simulated performance, the insertion loss is within the range of 0.9-1.2 dB for the 22.5°phase shifter and 0.9-1.4 dB for the 45°phase shifter, and the input/output return loss is better than -12.5 and -11 dB respectively. They also achieve the similar P_1dB continuous wave power handing capability of 24.8 dBm at 10 GHz. The phase shifters show a good phase shift error, insertion loss and return loss in the X-band (40%), which can be employed into the wide bandwidth multi-bit digital phase shifter.     

数码语音温度计设计

针对水银温度计不便读数、响应速度慢、在普通家庭中使用面狭窄的特点,提出了数码语音温度计的设计方案。选择不锈钢封装的DS18B20作温度传感器Ⅰ、SD1720进行语音录放、STC89C52单片机进行温度信号采集、数据处理和语音回放控制,构建了实际的电路系统。实验表明,该数码语音温度计测量范围为0～99.9℃,显示分辨率为0.1℃,误差不大于±0.5℃,测温速度快,读数方便,语音清晰,语音播报间隔时间可调,可广泛应用于家庭或需要温度语音提示的场合。     

Low-power broadband quadrature signal generator based on phase-tunable dividers

This paper presents the design and experimental results of a low-power 300–960 MHz I/Q signal generator for low-IF receivers. The circuit is based on phase-tunable dividers and uses delay-locked loops, which provide phase accuracy for the quadrature signals as well as low-sensitivity of the phase error against temperature and power supply variations. Thanks to the adopted technique, the phase error can be further reduced by trimming the reference voltage of the delay-locked loops through a calibration digital word, which can be stored in a non-volatile memory during manufacturing. The I/Q generator exhibits an absolute phase error before calibration that is lower than 1.5°. The I/Q phase drift due to temperature variations from ?40 to 85 °C and power supply variations from 1.1 to 1.3 V is 0.3° and 0.2°, respectively. By dividing the overall frequency range into four 165-MHz wide sub-bands and using only four 5-bit calibration words, the I/Q phase variation with respect to frequency, temperature, and power supply is lower than 1° in the 300–960 MHz operating band. The I/Q generator is implemented in a 90-nm CMOS technology and exhibits a current consumption as low as 0.5 mA.     

All-digital thermal distribution measurement on field programmable gate array using ring oscillators

In this paper, a digital method for transient temperature distribution measurement of field programmable gate array (FPGA)-based systems is proposed. The smart thermal sensors used rely on correspondence between the delay and temperature in a ring oscillator. The tested temperature was converted into a time signal with a thermally-sensitive width. The output frequency is read out by a counter with a scan path, and then, transited to PC by a Universal Serial Bus (USB) interface. We capture the infrared images of the FPGA chip by infrared camera. The images were compared with the thermal map of the die constructed using an array of sensors. The tested temperature error varies by less than 1.6 °C in the range from 20 °C to 90 °C, and the maximum sampling rate is 330 Hz.     

Analog ASIC for improved temperature drift compensation of a high sensitive porous silicon pressure sensor

The paper focuses on the design of a CMOS analog ASIC for temperature-drift compensation of a high sensitivity piezoresistive micro-machined porous silicon pressure sensor to avoid analog-to-digital conversion, limit chip area and reduce power consumption. For implementing the compensation circuitry, multilayered perceptron (MLP) based artificial neural network (ANN) with inverse delayed function model of neuron has been optimized. The temperature drift compensation CMOS ASIC has been implemented to make porous silicon pressure sensor an excellent SMART porous silicon pressure sensor. Using the compensation circuit, the error in temperature-drift has been minimized from 93% to about 0.5% as compared to 3% using conventional neuron model in the temperature range of 25–80°C. The entire circuit has been designed using 0.35 μm AMS technology model and simulated using mentor graphics ELDO Simulator.     

一种恒流源驱动的高精度温度测量系统设计

为提高温度测量精度,利用REF200提供的0.4mA恒定电流驱动串联的四线制温度传感器PT1000和精密电阻,在传感器和精密电阻两端分别提取电压信号并对其进行调理,通过高精度AD7712对所得到的电压信号进行放大和A/D转换,设计了一种高精度温度测量系统。为了减小高精度温度测量中铂电阻非线性所引起的误差,在上位机中对数字信号进行了最小二乘法算法处理。测试结果表明,该系统稳定可靠,其随机误差和系统误差均小于0.1℃,实现了高精度温度测量。     

高精度温度控制系统的设计及应用研究

为了获得连续可调谐高频微波信号,首先设计了一种基于单片机控制的高精度热电制冷器(TEC)温度控制系统,该控制系统的控制芯片采用MSP430F149单片机,通过温度传感器TMP112进行温度信息的采集,驱动电路产生的PWM波信号驱动TEC芯片进行温度的控制,稳态误差约为0.060C。其次,利用该温度控制器控制光纤的温度,通过调节TEC温度控制器的温度,获得了10.872-10.905GHz的高频微波信号,信号频移大小和温度的斜率为1.1MHz/0C,如果增加控制系统的温度调谐范围可以获得更宽调谐范围的微波信号。     

SNR improvement in self-heterodyne detection Brillouin optical time domain reflectometer using Golay pulse codes

The application of Golay pulse coding technique in spontaneous Brillouin-based distributed temperature sensor based on self-heterodyne detection of Rayleigh and Brillouin scattering is theoretically and experimentally analyzed. The enhancement of system signal to noise ratio (SNR) and reduction of temperature measurement error provided by coding are characterized. By using 16-bit Golay coding, SNR can be improved by about 2.77 dB, and temperature measurement error of the 100 m heated fiber is reduced from 1.4 °C to 0.5 °C with a spatial resolution of 13 m. The results are believed to be beneficial for the performance improvement of self-heterodyne detection Brillouin optical time domain reflectometer.     

X波段4bit MMIC数字移相器的设计与实现

基于WIN 0.25 μm GaAs赝配高电子迁移率晶体管(PHEMT)工艺,设计并制备了一款X波段4 bit单片微波集成电路(MMIC)数字移相器.22.5°和45°移相单元采用开关滤波型拓扑结构,90°和180°移相单元采用高低通滤波型拓扑结构.对拓扑结构工作原理进行分析,并采用ADS2014软件完成电路的电磁仿真及优化.测试结果表明,该4 bit MMIC数字移相器获得了优良的宽带性能,且与仿真结果吻合良好.在8～ 13 GHz频带内,移相器的均方根(RMS)相位精度误差小于6.5°,插入损耗优于-6.8 dB,RMS插入损耗波动低于0.5 dB,输入回波损耗优于-13 dB,输出回波损耗优于-9.5 dB.该4 bit MMIC数字移相器在相对带宽为47％的X频段内性能优良,适用于有源相控阵雷达等通信系统中.