The effect of annealing on the physical properties of thermally evaporated CuIn2n+1S3n+2 thin films (n=0, 1, 2 and 3)

In this study, the annealing effect on structural, electrical and optical properties of CuIn_2n+1S_3n+2 thin films (n=0, 1, 2 and 3) are investigated. CuIn_2n+1S_3n+2 films were elaborated by vacuum thermal evaporation and annealed at 150 and 250 °C during 2 h in air atmosphere. XRD data analysis shows that CuInS₂ and CuIn₃S₅ (n=0 and 1) crystallize in the chalcopyrite structure according to a preferential direction (112), CuIn₅S₈ and CuIn₇S₁₁ (n=2 and 3) crystallize in the cubic spinel structure with a preferential direction (311). The optical characterization allowed us to determine the optical constants (refractive indexes 2.2–3.1, optical thicknesses 250–500 nm, coefficients of absorption 10⁵ cm^?1, coefficients of extinction <1, and the values of the optical transitions 1.80–2.22 eV) of the samples of all materials. We exploited the models of Cauchy, Wemple–DiDomenico and Spitzer–Fan for the analysis of the dispersion of the refractive index and the determination of the optical and dielectric constants.     

Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (1 1 1)

We have studied the experimental linear relationship between barrier heights and ideality factors for palladium (Pd) on bulk-grown (1 1 1) Sb-doped n-type germanium (Ge) metal-semiconductor structures with a doping density of about 2.5×10¹⁵ cm^?3. The Pd Schottky contacts were fabricated by vacuum resistive evaporation. The electrical analysis of the contacts was investigated by means of current–voltage (I–V) and capacitance–voltage (C–V) measurements at a temperature of 296 K. The effective barrier heights from I–V characteristics varied from 0.492 to 0.550 eV, the ideality factor n varied from 1.140 to 1.950, and from reverse bias capacitance–voltage (C^?2–V) characteristics the barrier height varied from 0.427 to 0.509 eV. The lateral homogenous barrier height value of 0.558 eV for the contacts was obtained from the linear relationship between experimental barrier heights and ideality factors. Furthermore the experimental barrier height distribution obtained from I–V and (C^?2?V) characteristics were fitted by Gaussian distribution function, and their mean values were found to be 0.529 and 0.463 eV, respectively.     

Electrochemical growth of tin(II) oxide films: Application in photocatalytic degradation of methylene blue

We have investigated the semiconducting and photoelectrochemical properties of SnO films grown potentiostatically on tin substrate. The oxide is characterized by X-ray diffraction, scanning electron microscopy and Raman spectroscopy. The anodic process corresponds to the formation of SnO·nH₂O pre-passive layer that is removed upon increasing potential due to surface etching at the metal/oxide interface. SnO films deposited for long durations (>50 mn) are uniform and well adhered; they thicken up to ~50 nm by diffusion-controlled process and the growth follows a direct logarithmic law. The thickness is determined by coulometry and the X-ray diffraction indicates the tetragonal SnO phase (SG: P4/mmm) with a crystallite size of 32 nm. The Mott–Schottky plot is characteristic of n type conductivity with an electrons density of 5.72×10¹⁸ cm⁻³, a flat band potential of −0.09 V_SCE and a depletion width of ~10 nm. The valence band, located at 5.91 eV below, vacuum is made up of hybridized O²⁻:2p Sn²⁺:5s while the conduction band (4.45 eV) derives from Sn²⁺:5p orbital. The electrochemical impedance spectroscopy (EIS) measured in the range (10⁻²–10⁵ Hz) shows the contribution of the bulk and grain boundaries. The energy band diagram predicts the photodegradation of methylene blue on SnO films. 67% of the initial concentration (10 mg L⁻¹) disappears after 3 h of exposure to visible light (9 mW cm⁻²) with a quantum yield of 0.072.     

Determination of structural and optical properties of gold phthalocyanine thin films using density functional theory

We determined some optical and electrical properties of thin gold phthalocyanine films. Calculations were performed in the framework of density functional theory using the full potential linear augmented plane wave method. Studies on the density of states and band structure yielded a bandgap energy (E_g) of approximately 2 eV. Two trap energy levels were observed at 0.9 and 1.3 eV. Analysis of the dielectric function and electric loss function revealed a plasmon oscillation at 1.8 eV. In addition, we determined static refractive index values in the x, y and z directions of n_0xx = 2.16, n_0yy = 1.66 and n_0zz = 2.07. The optical bandgap of gold phthalocyanine was estimated to be 0.97 eV. Calculations revealed strong absorption at 400–700 nm, which compares favorably with experimental results.     

A new p- and n-dopable selenophene derivative and its electrochromic properties

A novel electrically conducting polymer, poly(2-dodecyl-4,7-di(selenophen-2-yl)benzotriazole) (PSBT), containing selenophene as the strong donor and benzotriazole as the strong acceptor groups was synthesized by electrochemical polymerization. Homopolymerization and copolymerization (in the presence of 3,4-ethylenedioxythiophene (EDOT)) were achieved in acetonitrile/dichloromethane(95/5 v/v) with 0.1 M tetrabutylammonium hexafluorophosphate (TBAPF₆). The electrochemical and optical properties of homopolymer and copolymer were investigated by cyclic voltammetry, UV–Vis, near IR Spectroscopy. Cyclic voltammetry and spectroelectrochemistry studies demonstrated that homopolymer can be reversibly reduced and oxidized (both n- and p-doped) between ?1.9 V and +1.4 V, at a scan rate of 100 mV/s. The homopolymer revealed a transmissive light blue color in the oxidized state, and a red-purple color in the neutral state. A transmissive light blue color was also observed in the reduced state. Homopolymer films could be fully switched between their reduced and oxidized forms in 2.4 s and 0.4 s with a percent transmittance of 32% and 56% at 511 and 1200 nm, respectively. Poly(SBT) exhibits a λ_max value of 511 nm and a band gap of 1.67 eV which is quite low among the selenophene-containing polymers reported so far except for poly(1,2-bis(2-seleninyl)ethane).     

Characteristics of RF reactive sputter-deposited Pt/SiO2/n-InGaN MOS Schottky diodes

All RF sputtering-deposited Pt/SiO₂/n-type indium gallium nitride (n-InGaN) metal–oxide–semiconductor (MOS) diodes were investigated before and after annealing at 400 °C. By scanning electron microscopy (SEM), the thickness of Pt, SiO_2, n-InGaN layer was measured to be ~250, 70, and 800 nm, respectively. AFM results also show that the grains become a little bigger after annealing, the surface topography of the as-deposited film was smoother with the rms roughness of 1.67 nm and had the slight increase of 1.92 nm for annealed sample. Electrical properties of MOS diodes have been determined by using the current–voltage (I–V) and capacitance–voltage (C–V) measurements. The results showed that Schottky barrier height (SBH) increased slightly to 0.69 eV (I–V) and 0.82 eV (C–V) after annealing at 400 °C for 15 min in N₂ ambient, compared to that of 0.67 eV (I–V) and 0.79 eV (C–V) for the as-deposited sample. There was the considerable improvement in the leakage current, dropped from 6.5×10⁻⁷ A for the as-deposited to 1.4×10⁻⁷ A for the 400 °C-annealed one. The annealed MOS Schottky diode had shown the higher SBH, lower leakage current, smaller ideality factor (n), and denser microstructure. In addition to the SBH, n, and series resistance (R_s) determined by Cheungs׳ and Norde methods, other parameters for MOS diodes tested at room temperature were also calculated by C–V measurement.     

Region-dependent behavior of I–V characteristics in n-ZnO:Al/p-Si contacts

The discrepancy of rectifying characteristics in n-ZnO:Al/p-Si heterojunctions from diode to diode was demonstrated by region dependent dark I–V characteristics, where the junction is laterally cut to sequentially decrease the area. Further investigation shows that the junction (2.1×2.1 cm²) with the barrier height Φ=0.693 eV consists of one part (2.1×1.4 cm²) with Φ=0.695 eV and the other part (2.1×0.7 cm²) with Φ=0.686 eV. It is found that reverse currents saturate with different values of 3.6×10^?3, 2.5×10^?3 and 1.58×10^?3 A for the light I–V curves of the three junctions with the same areas. To explain this peculiarity, the probable reason is discussed in terms of carrier transportation through the spatially fluctuating barrier.     

Determination of contact parameters of Ni/n-GaP Schottky contacts

The electrical analysis of Ni/n-GaP structure has been investigated by means of current–voltage (I–V), capacitance–voltage (C–V) and capacitance–frequency (C–f) measurements in the temperature range of 120–320 K in dark conditions. The forward bias I–V characteristics have been analyzed on the basis of standard thermionic emission (TE) theory and the characteristic parameters of the Schottky contacts (SCs) such as Schottky barrier height (SBH), ideality factor (n) and series resistance (R_s) have been determined from the I–V measurements. The experimental values of SBH and n for the device ranged from 1.01 eV and 1.27 (at 320 K) to 0.38 eV and 5.93 (at 120 K) for Ni/n-GaP diode, respectively. The interface states in the semiconductor bandgap and their relaxation time have been determined from the C–f characteristics. The interface state density N_ss has ranged from 2.08 × 10¹⁵ (eV^?1 m^?2) at 120 K to 2.7 × 10¹⁵ (eV^?1 m^?2) at 320 K. C_ss has increased with increasing temperature. The relaxation time has ranged from 4.7 × 10^?7 s at 120 K to 5.15 × 10^?7 s at 320 K.     

A detailed comparative study on the main electrical parameters of Au/n-Si and Au/PVA:Zn/n-Si Schottky barrier diodes

We have fabricated Au/n-Si and Au/PVA:Zn/n-Si Schottky barrier diodes (SBDs) to investigate the effect of organic interfacial layer on the main electrical characteristics. Zn doped poly(vinyl alcohol) (PVA:Zn) was successfully deposited on n-Si substrate by using the electrospinning system and surface morphology of PVA:Zn was presented by SEM images. The current–voltage (I–V) characteristics of these SBDs have been investigated at room temperature. The experimental results show that interfacial layer enhances the device performance in terms of ideality factor (n), zero-bias barrier height (Φ_B0), series resistance (R_s), and shunt resistance (R_sh) with values of 1.38, 0.75 eV, 97.64 Ω, and 203 MΩ whereas those of Au/n-Si SBD are found as 1.65, 0.62 eV, 164.15 Ω and 0.597 MΩ, respectively. Also, this interfacial layer at metal/semiconductor (M/S) interface leads to a decrease in the magnitude of leakage current and density of interface states (N_ss). The values of N_ss range from 1.36×10¹² at E_c—0.569 eV to 1.35×10¹³ eV^?1 cm^?2 at E_c—0.387 eV for Au/PVA:Zn/n-Si SBD and 3.34×10¹² at E_c—0.560 eV to 1.35×10¹³ eV^?1 cm^?2 at E_c—0.424 eV for Au/n-Si SBD. The analysis of experimental results reveals that the existence of PVA:Zn interfacial layer improves the performance of such devices.     

Anisotropic optical properties of single crystalline PTCDA studied by spectroscopic ellipsometry

We report anisotropic spectra of 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) in the optical energy range 1.5–3.7 eV, measured at room temperature by spectroscopic ellipsometry. The results were obtained on single crystals of α-PTCDA grown by temperature gradient sublimation. Spectra were measured at highly symmetric positions of the plane of incidence relative to the sample crystallographic axes and are presented as pseudo-values of refractive index 〈n〉 and extinction coefficient 〈k〉, which reflect a very large anisotropy of these optical functions. The spectroscopic properties of the excited states in the molecular plane (1 0 2) are analyzed; in particular, we identify clear Davydov splittings proving the formation of coherent excitons in the crystal. Out-of-plane, we observe a relatively narrow absorption peak at ∼2.9 eV that is ascribed to a charge-transfer transition.     

Optical characterization of mechanically alloyed PbSnS3 nanocrystals

The present study explains the preparation of PbSnS₃ nanocrystals using mechanical alloying as the processing technique and elemental powders as the starting material. The elemental powders of Pb, Sn and sublimed sulphur (S) were mechanically alloyed for 40 h. Phases evolved during mechanical alloying are explored by X-ray diffraction (XRD). The morphology and microstructural features have been investigated using High-resolution Transmission Electron Microscopy (HRTEM). UV–Vis–NIR spectroscopy has been used to measure the optical absorption characteristics. The mechanically alloyed powders show particle sizes in the range of 3–12 nm. The absorption edge extends from 503 nm to the visible region to 1360 nm near infrared region with a sudden change in slope at 860 nm, indicating the feature of indirect band gap semiconductors. The intersection point with the x-axis of extrapolating (αE)² line as a function of E gives a direct band gap of 1.33 eV and an indirect gap of 0.59 eV.     

Pulse electrodeposited copper indium sulpho selenide films and their properties

Copper indium sulpho selenide films of different composition were deposited by the pulse plating technique at 50% duty cycle (15 s ON and 15 s OFF). X-ray diffraction studies indicated the formation of single phase chalcopyrite copper indium sulpho selenide films. Transmission Electron Microscope studies indicated that the grain size increased from 10 nm–40 nm as the selenium content increased. The band gap of the films was in the range of 0.95 eV–1.44 eV. Room temperature resistivity of the films is in the range of 16.0 Ω cm–33.0 Ω cm. Films of different composition used in photoelectrochemical cells have exhibited photo output. Films of composition, CuInS_0.9Se_0.1 have exhibited maximum output, a V_OC of 0.74 V, J_SC of 18.50 mA cm^?2, ff of 0.75 and efficiency of 11.40% for 60 mW cm^?2 illumination.     

Carbazole-based hole transporting material for solid state dye-sensitized solar cells: Influence of the purification methods

The synthesis and properties of a glass-forming carbazole compound 9-(ethyl)-3,6-bis(4,4′-dimethoxydiphenylaminyl)-carbazole are reported. The thermal, optical and electrochemical properties of the hole-transporting molecule were studied by differential scanning calorimetry, thermogravimetric analysis, UV/Vis spectroscopy and cyclic voltammetry. The molecular glass exhibits a thermal stability as high as 370 °C and a glass transition temperature of 68 °C. The synthesized coumpound absorbs in the 250–400 nm range and possesses an optical band gap of 2.76 eV, avoiding any screening effect with the dye. The solid state ionization potential (IPss) of the molecule, estimated by cyclic voltammetry is around 4.77 eV, higher than the standard spiro-OMeTAD hole-transporting material. The compound was finally assessed as hole-transporting material in the solid state dye-sensitized solar cells with (5-(1,2,3,3 a,4,8b-hexahydro-4-[4-(2,2-diphenylvinyl)phenyl]-cyclopenta[b]indole-7-ylmethylene)-4-oxo-2-thioxo-thiazolidin-3-yl)acetic acid (D102) as sensitizer. The effect of the purity of the glassy molecule on photovoltaic performances is discussed and showed a two-fold increase of the power conversion efficiency after purification by sublimation, going from 0.82% to 1.62% under standard AM 1.5 G solar irradiation (100 mW/cm²).     

Fabrication of ZnO-NiO nanocomposite thin films and experimental study of the effect of the NiO,ZnO concentration on its physical properties

ZnO-NiO nanocomposites thin films were elaborated at different mixing concentrations using sol gel and spin coating methods. Their structural and morphological evolutions as well as the optical and electrical properties were investigated. XRD diffraction and Raman spectra allowed phase identifications of ZnO (zinc oxide) and NiO (nickel oxide) with no appearance of secondary phases and the crystallinity of elaborated nanocomposite films improved with doping concentration increase. The grain sizes of obtained ZnO-NiO nanocomposites are investigated by AFM (Atomic force microscopy); they increase in the range (10–65 nm) and they are observed to affect the optical and electrical properties. In fact, ZnO-NiO nanocomposites thin films optical reflectivity decreased in the range (10–5%) with the increasing of mixing proportion and their resistivity decreased up to 1.4 10² Ω cm. The optical band gaps were in the range (3.3–4 eV). The values obtained by UV–Vis spectroscopy and ellipsometry are quite similar. We remarked also that the NiO concentration increase on to the nanocomposite induced a red shift of the gap value while the ZnO increase led toward a blue shift     

A unique and facile preparation of lanthanum ferrite nanoparticles in emulsion nanoreactors: Morphology,structure, and efficient photocatalysis

Lanthanum ferrite nanoparticles (LaFeO₃ NPs) with light absorption properties in the visible region were successfully synthesized in CTAB (cetyltrimethyl ammonium bromide) emulsion nanoreactors at room temperature. The morphology, size, structure, elemental composition, and optical properties of these particles were characterized by field emission scanning electron microscope (FE-SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), fourier transform infrared spectroscopy (FT-IR), X-ray fluorescence (XRF), and ultraviolet–visible absorption (UV–Vis) spectroscopy. Through this method, highly crystalline and well-dispersed perovskite LaFeO₃ NPs with a phase-pure were successfully obtained. The band gap energy (E_g) of the LaFeO₃ NPs was calculated by UV-Vis spectroscopy at the wavelength of about 517 nm and is observed to have a value of 2.43 eV. The photocatalytic activities of LaFeO₃ NPs were evaluated by the degradation of toluidine blue O (TBO, used as a probe) dye under visible light irradiation, which exhibits a high photocatalytic TBO dye degradation activity as compared to the commercial P-25 titania powder. This phenomenon is due to smaller band gap energy and changing from bulk to nanostructure. The higher photocatalytic activity is also related to the photo absorption.     

Functionalized terfluorene for solution-processed high efficiency blue fluorescence OLED and electrophosphorescent devices

A new multifunctional blue-emitting terfluorene derivative (TFDPA) featured with triphenylamine groups for hole-transportation and long alkyl chains for solution processability on the conjugation inert bridge centers was reported. TFDPA can give homogeneous thin film by solution process and exhibits high hole mobility (μ_h ≈ 10^?3 cm² V^?1 s^?1) and suitable HOMO for hole injection. Particularly, TFDPA performs efficient deep-blue emission with high quantum yield (～100% in solution, 43% in thin film) and suitable triplet energy (E_T = 2.28 eV), making solution-processed OLED devices of using TFDPA as blue emitter and as host for iridium-containing phosphorescent dopants feasible. The solution-processed nondoped blue OLED device gives saturated deep-blue electroluminescence [CIE = (0.17, 0.07)] with EQE of 2.7%. TFDPA-hosted electrophosphorescent devices performed with EQE of 6.5% for yellow [(Bt)₂Ir(acac)], 9.3% of orange [Ir(2–phq)₃], and 6.9% of red [(Mpq)₂Ir(acac)], respectively. In addition, with careful control on the doping concentration of [(Bt)₂Ir(acac)], a solution-processed fluorescence–phosphorescence hybrided two-color-based WOLED with EQE of 3.6% and CIE coordinate of (0.38, 0.33) was successfully achieved.     

Investigation of deep level defects in copper irradiated bipolar junction transistor

Commercial bipolar junction transistor (2N 2219A, npn) irradiated with 150 MeV Cu¹¹⁺-ions with fluence of the order 10¹² ions cm^?2, is studied for radiation induced gain degradation and deep level defects. I–V measurements are made to study the gain degradation as a function of ion fluence. The properties such as activation energy, trap concentration and capture cross-section of deep levels are studied by deep level transient spectroscopy (DLTS). Minority carrier trap levels with energies ranging from E_C ? 0.164 eV to E_C ? 0.695 eV are observed in the base–collector junction of the transistor. Majority carrier trap levels are also observed with energies ranging from E_V + 0.203 eV to E_V + 0.526 eV. The irradiated transistor is subjected to isothermal and isochronal annealing. The defects are seen to anneal above 350 °C. The defects generated in the base region of the transistor by displacement damage appear to be responsible for transistor gain degradation.     

Photo-electrochemical characterization of porous material Fe-FSM-16. Application for hydrogen production

We describe in the present work the photo-electrochemical characterization of iron/folded-sheets mesoporous materials (Fe-FSM-16, Si/Fe=60) synthesized by microwave-assisted hydrothermal (M-H) method and its application for the hydrogen evolution upon visible light. The mesoporous catalyst consists of small Fe₂O₃ particles (～2 nm) spread on SiO₂ with specific surface area of ～800 m² g^?1. The capacitance measurements reveal an iron deficiency and the oxide exhibit p type conductivity with activation energy of 0.07 eV. The optical gap of the hematite (α-Fe₂O₃) is evaluated at 3.24 eV from the diffuse reflectance spectrum. The flat band potential V_fb (?0.54 V_SCE) and the holes density N_D (9.56×10¹⁴ cm^?3) of the hematite are obtained respectively by extrapolating the linear part to C^?2=0 and the slope of the Mott Schottky plot. At pH=7, the conduction band (?0.47 V_SCE) is suitably positioned with respect to the H₂O/H₂ level (?0.59 V_SCE) leading to a spontaneous water reduction. The oxide is stabilized by hole consumption involving SO₃^2? and S₂O₃^2? species and spectacular improvement of the hydrogen evolution is reported with evolution rates of ～461 and 163 μ mol respectively.     

Electric conduction of PbBr-based layered perovskite organic–inorganic superlattice having carbazole chromophore-linked ammonium molecule as an organic layer

We have successfully prepared thin films of PbBr-based layered perovskite having hole-transporting carbazole chromophore-linked ammonium molecules as an organic layer by a simple spin-coating from the N,N-dimethylformamide solution in which the stoichiometric amount of lead bromide and carbazole-linked ammonium bromides was dissolved. Their X-ray diffraction profiles exhibited that their layer structure formed (0 0 n)-orientation, where c-axis is perpendicular to the substrate plane. Their layer structure depended on the alkyl chain length of ammonium molecules. When methylene length of C₅H₁₀ was employed in the carbazole-linked ammonium molecules, highest orderliness of the layer structure was attained; higher-order X-ray diffraction peaks were observed in the layered perovskite films. In the layered pervskite film, in-plane conduction, namely conduction in the direction of the stacking of carbazole chromophore, was measured. For comparison, conductivity of poly(N-vinylcarbazole) (PVCBz) thin film was also measured. The conductivity of the layered perovskite thin film (1.8 × 10^?10 Scm^?1 at 303 K) was about three order of magnitude larger than that of the PVCBz thin film (5.3 × 10^?14 Scm^?1 at 303 K). Despite the much higher conductivity of the layered peroskite thin film, the activation energy of the conductivity of the layered perovskite thin film (1.44 eV) was about 2.4 times larger than that of the PVCBz thin film (0.61 eV). This phenomenon is probably due to difference in film morphology through considering the results of AFM observation.     

Tailoring chromatic dispersion in chalcogenide–tellurite microstructured optical fiber

We report fabrication of a highly nonlinear hybrid microstructured optical fiber composed of chalcogenide glass core and tellurite glass cladding. The flattened chromatic dispersion can be achieved in such an optical fiber with near zero dispersion wavelength at telecommunication wavelengths λ = 1.35–1.7 μm, which cannot be achieved in chalcogenide glass optical fibers due to their high refractive index, i.e. n > 2.1. We demonstrate a hybrid 4-air hole chalcogenide–tellurite optical fiber (Δn = 0.25) with flattened chromatic dispersion around λ = 1.55 μm. In optimized 12-air hole optical fiber composed of the same glasses, the chromatic dispersion values were achieved between −20 and 32 ps/nm/km in a broad wavelength range of 1.5–3.8 μm providing the fiber with extremely high nonlinear coefficient 86,000 km⁻¹W⁻¹. Hybrid chalcogenide/tellurite fibers pumped with the near infrared lasers give good promise for broadband optical amplification, wavelength conversion, and supercontinuum generation in the near- to mid-infrared region.