On the local conductivity of individual diamond seeds and their impact on the interfacial resistance of boron-doped diamond films

In many electroanalytical and bio-electrochemical applications conductive diamond films act as contact layers. These films are grown starting from a Si-surface seeded with undoped diamond particles. In this study, the impact of the seeds and their electrical properties on the interfacial resistance through the diamond film − substrate is determined on the nanometer-scale by probing the nucleation side of the conductive diamond films using scanning spreading resistance microscopy. We evidence that, although the diamond film is grown in a B-rich ambient, no significant B incorporation occurs into the particles and they remain non-conductive after growth. We demonstrate that they impact strongly on the interfacial resistance, increasing it by more than one order of magnitude depending on the seed layer coverage. We further establish a model linking the seed size and density to this interfacial resistance, with excellent agreement to our experimental results. Based on this model, we predict that it is necessary to limit the undoped particle density to less than 5 × 1010 cm−2, for 20 nm particle size, in order to eliminate the contribution of the undoped seeds to the interfacial resistance. Our model also indicates that the fundamental solution to this problem lies in the use of B-doped seeds.     

Investigation of the nucleation and growth mechanisms of nanocrystalline diamond/amorphous carbon nanocomposite films

Nucleation and growth, but especially the development of the morphology of nanocrystalline diamond/amorphous carbon (NCD/a-C) nanocomposite films have been investigated by systematic variation of three important parameters, namely the deposition time, the growth rate, and the substrate pre-treatment used to enhance the nucleation density. The films have been characterized, among others, by scanning electron microscopy, atomic force microscopy, and Fourier transform infrared spectroscopy. It is shown that, by successive addition of ultradispersive diamond powder to the suspension of nanocrystalline diamond powder in n-pentane used for the ultrasonic pre-treatment, the nucleation density can be enhanced by two orders of magnitude from 1 · 10⁸ cm^− 2 to > 1 · 10¹⁰ cm^− 2. This reduces the thickness required to achieve closed films from 1 µm to 100 nm. However, once coalescence of the individual nodules emerging from the nucleation sites has taken place the films loose “memory” of the nucleation step and start to develop the typical NCD morphology consisting of larger features with diameters of some hundreds of nm which are in turn composed of much smaller features. Irrespective of the feature size and of the parameters used, the films of this investigation possess AFM rms roughnesses of 9–13 nm, indicating that rms values are not sufficient to characterize NCD surfaces.     

The production of large scale ultrathin aligned CNT films by combining AC electric field with liquid flow

We report a simple and versatile technique combining the use of an AC electric field with a liquid shear force to prepare ultrathin aligned CNT films on solid substrates. Multiwalled carbon nanotubes (MWCNTs), which were synthesized by a template method and acid-treated single walled carbon nanotubes (SWCNTs) were dispersed in water and used for the ultrathin film fabrication. A solid substrate was immersed in the CNT dispersions and withdrawn at constant speed under AC electric field. SEM images of the substrate showed that CNTs were aligned with the AC electric field and the withdrawal direction and formed uniform films with a thickness around 10 nm for SWCNTs and 90 nm for MWCNTs. Repeating the deposition process increases the density and size of the film while also maintaining nanometer-scale thickness. Unidirectional alignment of CNTs was also confirmed by Raman spectra and electric conductivity measurements. It was found that ultrathin films of aligned SWCNTs exhibited very high anisotropic electrical conductivity with conductivity measured parallel to the alignment direction 3.3 × 10⁵ times higher than that measured in the perpendicular direction. We demonstrate that use of the aligned ultrathin SWCNT film for a unidirectional alignment of liquid crystal.     

Studies of heteroepitaxial growth of diamond

Large-scale heteroepitaxial growth of diamond depends critically on the development of a suitable lattice-matched substrate system. Oxide substrates, notably MgO and SrTiO₃, on which thin epitaxial films of iridium serve as a nucleation layer for diamond have already shown considerable promise. We describe here improvements in the growth of single crystal diamond by low-pressure microwave plasma-enhanced CVD. Oxide substrates with flat, low-index surfaces form the initial basis for the process. Iridium was deposited on heated substrates in a UHV electron-beam evaporation system resulting in epitaxial films, typically 150–300 nm thick, with Ir (1 0 0) parallel to the surface of all substrates as confirmed by X-ray and electron backscattering diffraction. Following Ir deposition, the samples were transferred to a CVD reactor where a bias-enhanced nucleation step induced a dense condensate that completely covered the Ir surface. Uniform nucleation densities of order 10¹² cm⁻² were observed. Interrupted growth studies, carried out at intervals from seconds to minutes subsequent to terminating the nucleation step, revealed a rapid coalescence of grains. One hour of growth resulted in a smooth, nearly featureless, (0 0 1) diamond film. For extended growth runs, slabs of diamond were grown with thickness as great as 38 μm and lateral dimensions near 4 mm. The crystals were transparent in visible light and cleaved on (1 1 1) planes along 〈1 1 0〉 directions, similar to natural diamond. Of particular significance is the successful use of sapphire as an underlying substrate. Its high crystalline perfection results in epitaxial Ir films with X-ray linewidths comparable to those grown on SrTiO₃. However, Al₂O₃ possesses superior interfacial stability at high temperatures in vacuum or in a hydrogen plasma with a better thermal expansivity match to diamond. Since sapphire is available as relatively inexpensive large diameter substrates, these results suggest that wafer-scale growth of heteroepitaxial diamond should be feasible in the near future.     

Photoactivity enhancement of zinc sulfide ceramics thin films through ultrathin buffering engineering

Zinc-sulfide (ZnS) thin films 200 nm-thick with various crystal features were fabricated using RF sputtering onto patterned sapphire substrates with and without ultrathin homo-ZnS and hetero-zinc oxide (ZnO) ultrathin buffer layers (approximately 45 nm in thickness). Microstructural analyses revealed that the crystalline ZnS thin films with a columnar grain feature were deposited on the various ultrathin buffer layers-coated substrates through RF sputtering. The surface morphology of the ZnS thin films became rough and the crystal defect density of the ZnS thin films increased when the ZnS thin films were grown on the buffer layers. Comparatively, the rugged and island-like ZnO buffer layer engendered the crystal growth of the ZnS thin film with a higher degree of structural disorder than that of the crystal growth on the ZnS buffer layer. An increased crystal defect number together with the highly rugged film surface of the ZnS thin film buffered with ultrathin ZnO layers efficiently enhanced the photoactivity of the 200 nm-thick ZnS thin film in this study.     

Silicon carbide films from polycarbosilane and their usage as buffer layers for diamond deposition

Thin films of polycarbosilane (PCS) were coated on a Si (100) wafer and converted to silicon carbide (SiC) by pyrolyzing them between 800 and 1150 °C. Granular SiC films were derived between 900 and 1100 °C whereas smooth SiC films were developed at 800 and 1150 °C. Enhancement of diamond nucleation was exhibited on the Si (100) wafer with the smooth SiC layer generated at 1150 °C, and a nucleation density of 2 × 10¹¹ cm^− 2 was obtained. Nucleation density reduced to 3 × 10¹⁰ cm^− 2 when a bias voltage of − 100 V was applied on the SiC-coated Si substrate. A uniform diamond film with random orientations was deposited to the PCS-derived SiC layer. Selective growth of diamond film on top of the SiC buffer layer was demonstrated.     

Growth of diamond films with high surface smoothness

Diamond films with highly smooth backside surface have been deposited by positively biasing the substrate during diamond growth in a hot-filament chemical vapor deposition (HFCVD) system. By bonding the diamond film on the glass and wet etching to remove silicon, the highly smooth diamond surface can be exposed and used directly for the fabrication of diamond devices.Silicon substrate was first treated by diamond powder of 625 nm in an ultrasonic bath. By positively biasing the substrate, electron bombardment during diamond growth increases the nucleation density from 10⁸ ∼ 10⁹ cm^− 2 to 4 × 10¹¹ cm^− 2. The surface smoothness on the backside of diamond film has thus been improved significantly, inducing root-mean-square roughness of 5 nm. Owing to the extremely high surface smoothness and the high crystalline quality on the backside of diamond film and the high diamond growth rate, the backside surface of the diamond film grown under electron bombardment is particularly suitable for device fabrication.     

Fretting wear and electrochemical corrosion of well-adhered CVD diamond films deposited on steel substrates with a WC–Co interlayer

Diamond films have been grown on carbon steel substrates by hot-filament chemical vapour deposition methods. A Co-containing tungsten-carbide (WC–Co) coating prepared by high velocity oxy-fuel spraying was used as an intermediate layer on the steel substrates to minimize the early formation of graphite (and thus growth of low quality diamond films) and to enhance the diamond film adhesion. The effects of the WC–Co interlayer on nucleation, quality, adhesion, tribological behaviour and electrochemical corrosion of the diamond film were investigated. The diamond films exhibit excellent adhesion under Rockwell indentation testing (1500 N load) and when subjected to high-speed, high-load, long-time reciprocating dry sliding ball-on-flat wear tests against a Si₃N₄ counterface in ambient air (500 rpm, 200 N, 300,000 cycles). A WC–Co interlayer with appropriate chemical pretreatment is shown to play an important role in improving the nucleation, quality and adhesion of the diamond film, relative to that shown by substrates without such pretreatment.     

Synthesis of diamond using ultra-nanocrystalline diamonds as seeding layer and their electron field emission properties

A modified nucleation and growth process was adopted so as to improve the electron field emission (EFE) properties of diamonds films. In this process, a thin layer of ultra-nanocrystalline diamonds (UNCD), instead of bias-enhanced-nuclei, were used as nucleation layer for growing diamond films in H₂-plasma. The morphology of the grains changes profoundly due to such a modified CVD process. The geometry of the grains transform from faceted to roundish and the surface of grains changes from clear to spotty. The Raman spectroscopies and SEM micrographs imply that such a modified diamond films consist of UNCD clusters (~ 10–20 nm in size) on top of sp³-bonded diamond grains (~ 100 nm in size). Increasing the total pressure in CVD chamber deteriorated the Raman structure and hence degraded the EFE properties of the films, whereas either increasing the methane content in the H₂-based plasma or prolonged the growth time improved markedly the Raman structure and thereafter enhanced the EFE properties of diamond films. The EFE properties for the modified diamond films can be turned on at E₀ = 11.1 V/μm, achieving EFE current density as large as (J_e) = 0.7 mA/cm² at 25 V/μm applied field.     

Nucleation and growth surface conductivity of H-terminated diamond films prepared by DC arc jet CVD

High-quality polycrystalline diamond film has been extremely attractive to many researchers, since the maximum transition frequency (f_T) and the maximum frequency of oscillation (f_max) of polycrystalline diamond electronic devices are comparable to those of single crystalline diamond devices. Besides large deposition area, DC arc jet CVD diamond films with high deposition rate and high quality are one choice for electronic device industrialization. Four inch free-standing diamond films were obtained by DC arc jet CVD using gas recycling mode with deposition rate of 14 μm/h. After treatment in hydrogen plasma under the same conditions for both the nucleation and growth sides, the conductivity difference between them was analyzed and clarified by characterizing the grain size, surface profile, crystalline quality and impurity content. The roughness of growth surface with the grain size about 400 nm increased from 0.869 nm to 8.406 nm after hydrogen plasma etching. As for the nucleation surface, the grain size was about 100 nm and the roughness increased from 0.31 nm to 3.739 nm. The XPS results showed that H-termination had been formed and energy band bent upwards. The nucleation and growth surfaces displayed the same magnitude of square resistance (R_s). The mobility and the sheet carrier concentration of the nucleation surface were 0.898 cm/V s and 10¹³/cm² order of magnitude, respectively; while for growth surface, they were 20.2 cm/V s and 9.97 × 10¹¹/cm², respectively. The small grain size and much non-diamond carbon at grain boundary resulted in lower carrier mobility on the nucleation surface. The high concentration of impurity nitrogen may explain the low sheet carrier concentration on the growth surface. The maximum drain current density and the maximum transconductance (g_m) for MESFET with gate length L_G of 2 μm on H-terminated diamond growth surface was 22.5 mA/mm and 4 mS/mm, respectively. The device performance can be further improved by using diamond films with larger grains and optimizing device fabrication techniques.     

Some novel aspects of nanocrystalline diamond nucleation and growth by direct current plasma assisted chemical vapor deposition

Some novel aspects of nanocrystalline diamond (NCD) film nucleation and growth by DC-PACVD were investigated, which focused on the effect of methane injection timing at ramp stage (see discussion in the text) and cathode temperature as well. NCD films were deposited for 4 h on a 4 in. Si wafer which was ultrasonically seeded in a methanol slurry of diamond powder with a 5 nm average diameter. The H₂/CH₄/N₂ gas mixture with a composition of 96.7%/3%/0.3% was used as precursor gas. The total gas flow rate and chamber pressure were 150 sccm and 150 Torr, respectively. Discharge voltage and current of 500 V and 45 A were used respectively at a substrate temperature of 800 °C. The nucleation density, microstructure, growth rate and crystallinity of the obtained NCD films were characterized by SEM, XRD, NEXAFS and Raman spectroscopy. The nucleation density was found to be sensitive to methane injection timing in the ramp stage. In addition, the cathode temperature greatly affected the nucleation density, grain size and growth rate.     

Surface composition,bonding, and morphology in the nucleation and growth of ultra-thin,high quality nanocrystalline diamond films

The morphology, composition, and bonding character (carbon hybridization state) of continuous, ultra-thin (thickness ∼ 60 nm) nanocrystalline diamond (NCD) membranes are reported. NCD films were deposited on a silicon substrate that was pretreated using an optimized, two-step seeding process. The surface after each of the two steps, the as-grown NCD topside and the NCD underside (revealed by etching away the silicon substrate) is examined by X-ray PhotoElectron Emission spectroMicroscopy (X-PEEM) combined with X-ray absorption near edge structure (XANES) spectroscopy, X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). The first step in the seeding process, a short exposure to a hydrocarbon plasma, induces the formation of SiC at the diamond/Si interface along with a thin, uniform layer of hydrogenated, amorphous carbon on top. This amorphous carbon layer allows for a uniform, dense layer of nanodiamond seed particles to be spread over the substrate in the second step. This facilitates the growth of a homogeneous, continuous, smooth, and highly sp³-bonded NCD film. We show for the first time that the underside of this film possesses atomic-scale smoothness (RMS roughness: 0.3 nm) and > 98% diamond content, demonstrating the effectiveness of the two-step seeding method for diamond film nucleation.     

Silicon-On-Diamond layer integration by wafer bonding technology

In this study, Silicon-On-Diamond (SOD) micro-structures have been fabricated using either Smart Cut? or bonded and Etched-Back Silicon On Insulator (BESOI) technology. Thanks to the development of an innovative smoothening process, polycrystalline diamond layers (C*) can be integrated as a buried oxide layer offering new opportunities in terms of thermal management.We describe different technological process flow investigations leading to SOD by bonding C* layer in the stack. As starting material we used poly-crystalline thin diamond films in the 200 nm to 7000 nm range of thickness. The C* is deposited by Chemical Vapour Deposition assisted by Microwave Plasma (MPCVD) onto various 50 mm wafers such as Si, SOI and polycrystalline silicon carbide (pSiC). As the roughness of the diamond layer is not directly compatible with a wafer bonding integration, an innovative smoothening process in 3 steps has been developed and named “DPE” for Deposition, Planarization and Etching. Using the DPE process, the roughness of 5 µm thick diamond layer could be reduced from 50 to 3 nm RMS and down to 1.5 nm RMS for a thin 200 nm layer.In order to demonstrate the feasibility of a GaN on SOD micro-structure design for HEMT applications, layer transfers have been carried out by a bonding and thinning process from C*/Si bulk using oxide bonding layers. From thermal spreading efficiency consideration, new processes of fabrication of SOD/poly-SiC substrate are in progress involving BESOI or Si Smart Cut? technologies and poly-Si bonding layer starting from C*/poly-SiC.Pure SOD substrate were also fabricated by using C*/SOI and poly-Si bonding layer in a BESOI technology. A thin active silicon layer (70 nm) of 50 mm diameter onto a 140 nm thick diamond BOX layer has been transferred on 200 mm diameter Si substrate for future MOSFET's devices demonstrations. Significant progress has been done in diamond layer integration by wafer bonding.     

Synthesis of large area carbon nanosheets for energy storage applications

We report the large area growth of highly conductive carbon nanosheets (CNS) composed of few layer graphene on 200 mm diameter Si substrates using conventional radio frequency plasma-enhanced chemical vapour deposition. Raman spectroscopy is used to characterise the evolution of the CNS nucleation and growth with time in conjunction with TEM revealing the nano-sized graphene-like nature of these films and the intimate contact to the substrate. An individual sheet can have edges as thin as 3 graphene layers. The influence of the growth support layer is also discussed as film growth is compared on titanium nitride (TiN) and directly on Si. Electrochemical cyclic voltammogram (CV) measurements reveal these layers to form an excellent electrical contact to the underlying substrate with excellent stability towards oxidation whilst having a large electrochemical surface area. The resistance of a 150 nm film was measured to be as low as 20 μohm cm. The high percentage of narrow few layer graphene edge sites exposed allows for faster electrochemical reaction rates compared to carbon nanotubes (CNTs) and other electrode materials (glassy carbon and Pt).     

Free-standing diamond films prepared by a dc-plasma method above the ethylene glycol solution

Free-standing diamond films were prepared using a plasma chemical vapor deposition method above the liquid surface through two routes. Diamond was deposited on the surface of a tungsten anode under a dc-plasma regime. The electric field near the anode surface was flattened by placing a sub-electrode and it brought uniform film deposition. The growth rate was 5 μm h^− 1 and the thickness increased with the deposition time up to 12 μm. A free-standing film removed from the tungsten anode showed translucency. A glassy carbon layer with a thickness of 100 nm existed between the diamond film and the anode surface, and it partly remained on the back side of the removed diamond film. Under a plasma-jet regime, diamond was deposited on a silicon substrate brown with a plasma jet expelled from a nozzle exit. A high growth rate of 100 μm h^− 1 was attained at the maximum with increasing discharge power and carbon concentration, but the thickness profile was quite uneven. The removed film was elliptical and was larger than the nozzle size. A 3C–SiC layer was formed on the back side of the removed film.     

Preparation of 4-inch Ir/YSZ/Si(001) substrates for the large-area deposition of single-crystal diamond

Diamond/Ir/YSZ/Si(001) is currently the most promising multilayer structure for the future realisation of large-area diamond single crystals. A decisive key is the preparation of the iridium layers on silicon. It is shown in this work that high quality iridium films with mosaic spread below 0.2° can be grown on oxide buffer layers with a mosaic spread higher than 1°. An averaging process during the coalescence of the iridium islands provides a plausible mechanism for this phenomenon. The oxide buffer and the iridium overlayers can be grown homogeneously on 4-inch wafers in a similar quality as for 1 × 1 cm² samples. Bias enhanced nucleation followed by 40 h growth on the large-area Ir/YSZ/Si(001) wafers yields diamond films with a mosaicity of 0.16° (tilt) and 0.34° (twist). For a further increase of the area of heteroepitaxial diamond nucleation the homogeneity of the plasma discharge has to be improved.     

Nucleation and growth of diamond films on single crystal and polycrystalline tungsten substrates

Silicon has been the most widely studied substrate for the nucleation and growth of CVD diamond films. However, other substrates are of interest, and in this paper, we present the results of a study of the biased nucleation and growth of diamond films on bulk single and polycrystalline tungsten. Diamond films were nucleated and grown, using a range of bias and reactor conditions, and characterized by Raman spectroscopy and scanning electron microscopy (SEM). High-quality (100) textured films (Raman FWHM<4 cm⁻¹) could be grown on both single and polycrystalline forms of the tungsten substrate. On carefully prepared substrates, by varying the bias treatment, it was possible to determine the nucleation density over a 4–5 order range, up to ∼10⁹ cm⁻². Raman measurements indicated that the diamond films grown on bulk tungsten exhibited considerable thermal stress (∼1.1 GPa), which, together with a thin carbide layer, resulted in film delamination on cooling. The results of the study show that nucleation and growth conditions can be used to control the grain size, nucleation density, morphology and quality of CVD diamond films grown on tungsten.     

Ferroelectric and dielectric properties of manganese-doped Na0.5Bi0.5TiO3 nanocrystalline thin films prepared by metal organic decomposition: A single-layer thickness-dependent study

2 at% Manganese-doped Na_0.5Bi_0.5TiO₃ (NBTMn) thin films with single-layer thicknesses ranging from 15 to 45 nm/l were deposited on the indium tin oxide/glass substrates by a metal organic decomposition process and spin coating technique. The influence of single-layer thickness on the crystal structure, surface morphology, insulating ability, ferroelectric and dielectric properties was mainly investigated. Compared with the other films, NBTMn film with a single-layer thickness of 30 nm/l exhibits the (110)-preferred orientation and dense structure. Also, it shows the enhanced ferroelectricity with a large remanent polarization (P_r) of 38 μC/cm² due to the preferred orientation and low leakage current density. Meanwhile, a high dielectric tunability of 39% for NBTMn with 30 nm/l can be observed by varying the measuring applied voltage and frequency. These results indicate that the suitable layer thickness is beneficial to improve the electrical performances of NBTMn thin film.     

Transparent and high infrared reflection film having sandwich structure of SiO2/Al:ZnO/SiO2

New transparent and high infrared reflection films having the sandwich structure of SiO₂/Al:ZnO(AZO)/SiO₂ were deposited on the soda-lime silicate glass at room temperature by radio frequency (R.F.) magnetron sputtering. The optical and electrical properties of SiO₂ (110 nm)/AZO (860 nm)/SiO₂ (110 nm) sandwich films were compared with those of single layer AZO (860 nm) films and double layer SiO₂ (110 nm)/AZO (860 nm) films. The results show that these sandwich films exhibit high transmittance of over 85% in the visible light range (380–760 nm), and low reflection rate of below 4.5% in the wavelength range of 350–525 nm, which is not shown in the conventional single layer AZO (860 nm) films and double layer SiO₂ (110 nm)/AZO (860 nm) films. Further these sandwich films display a low sheet resistance of 20 Ω/sq by sheet resistance formula and high infrared reflection rate of above 80% in the wavelength range of 15–25 μm. In addition, the infrared reflection property of these sandwich films is determined mainly by the AZO film. The outer SiO₂ film can diminish the interference coloring and increase transparency; the inner SiO₂ film improves the adhesion of the coating to the glass substrate and prevents Ca²⁺ and Na⁺ in the glass substrate from entering the AZO film.     

X-ray reflectivity analysis on initial stage of diamond-like carbon film deposition on Si substrate by RF plasma CVD and on removal of the sub-surface layer by oxygen plasma etching

The multi-layered structure of thin diamond-like carbon (DLC) films was investigated by X-ray reflectivity (XRR) analysis. Thin DLC films were deposited on Si substrate by RF plasma chemical vapor deposition (CVD) from acetylene source gas with short duration of plasma operation from 0.08 to 4.99 s. It was confirmed from XRR analysis that the thin DLC film on Si substrate had 3 layers consisting of a subsurface layer on the grown surface, a mixing layer at the interface to Si substrate, and a bulk-DLC layer sandwiched between the 2 layers. The 3 layers had been formed in 0.08 s at beginning of deposition with distinctive bulk-DLC layer of 1.7 nm thick already appeared due to extremely higher deposition rate only at the initial stage of CVD. The thickness of bulk-DLC layer increased with increasing CVD duration while both the mixing layer of higher density and the sub-surface layer of extremely low density continuously existed. By oxygen plasma etching, it was confirmed by XRR analysis that the sub-surface layer was clearly removed and another layer of lower density than the bulk DLC appeared.