High-current field emission of point-type carbon nanotube emitters on Ni-coated metal wires

The fabrication and field emission characteristics are reported for point-type carbon nanotube (CNT) emitters formed by transferring a CNT film onto a Ni-coated Cu wire with a diameter of 1.24 mm. A Ni layer plays a role in enhancing the adhesion of CNTs to the substrate and improving their field emission characteristics. On firing at 400 °C, CNTs appear to directly bonded to a Ni layer. With a Ni layer introduced, a turn-on electric field of CNT emitters decreases from 1.73 to 0.81 V/μm by firing. The CNT film on the Ni-coated wire produces a high emission current density of 667 mA/cm² at quite a low electric field of 2.87 V/μm. This CNT film shows no degradation of emission current over 40 h for a current density of 60 mA/cm² at electric field of 6.7 V/μm. X-ray imaging of a printed circuit board with fine features is demonstrated by using our point-type CNT emitters.     

High performance field emission of carbon nanotube film emitters with a triangular shape

We report novel two-dimensional (2D) shaped carbon nanotube (CNT) field emitters using triangular-shaped CNT films and their field emission properties. Using the 2D shaped CNT field emitters, we achieved remarkable field emission performance with a high emission current of 22 mA (equivalent to an emission current density >10⁵ A/cm²) and long-term emission stability at 1 mA for 20 h. We also discuss the field emission behavior of the 2D shaped CNT field emitter in detail.     

Long-term stability of a horizontally-aligned carbon nanotube field emission cathode coated with a metallic glass thin film

A horizontally-aligned carbon nanotube (HACNT) field emission cathode was coated with a metallic glass thin film (MGTF) to improve the stability of the field emission properties. HACNT field emission cathodes have previously been fabricated on glass substrates using composite plating and crack-formation techniques. A carbon nanotubes/nickel (CNTs/Ni) composite film is deposited onto a glass substrate at 80 °C by the composite plating technique alone. Cracks are then formed in the CNT/Ni composite film during 30 min heating at 300 °C, and HACNTs are exposed in the cracks. The field emission properties of the HACNT field emission cathode show a low turn-on electric field E_on of about 2.3 V/μm, a low threshold electric field E_th of about 4.7 V/μm at an emission current density of 1 mA/cm², and a stability time of 78 h. The degradation of the HACNT field emission cathode is prevented by using a MGTF-coating technique and superior long-term stability (i.e. >125 h, with 5 nm MGTF; >270 h, with 10 nm MGTF) for the MGTF/HACNT field emission cathode is achieved.     

Self-heating Schottky emission from a ballasted carbon nanotube array

A ballast resistor is utilized in a low density vertically aligned carbon nanotube array. Based on the nature of the ballast resistor, the uniformity of the emission improves remarkably. A highly stable field emission current is obtained under a constant voltage and a current density of 300 mA/cm² is achieved. Joule heat generated by this field emission current increases the temperature of the CNT array significantly. The high temperature changes the emission to Schottky emission regime. The Schottky emission achieves 900 mA/cm², which is three times the field emission current density. Simulation result shows the corresponding temperature is about 1700 K. A color change of the emission area is observed after the experiment. When compared to the conventional Schottky cathode, the emitter is self-heating and no extra heater is needed. This is the first report of a successful utilization of a ballast resistor in a CNT based emission array and the first observation of Schottky emission from a vertically aligned CNT array used as an electron emitter.     

Field emission of carbon-nanotube point electron source

Carbon nanotube (CNT)-based point electron emitter was fabricated using a cavity-confined dielectrophoresis. The emission current of an individual multi-walled CNT (MWCNT) was stable up to 10 μA and reached ~ 2 mA (1.7 × 10⁸ A/cm²), about three orders of magnitude higher than the threshold current of the existing single MWCNT tip. At low electric field, the current fluctuated in a stepwise manner. On the other hand, above critical field, CNT point emitter started to disintegrate so that the current fluctuated rapidly and gradually diminished. These anomalous behaviors were explained from the cap opening and field-induced unraveling of tip edges.     

Growth of a three-dimensional complex carbon nanoneedle electron emitter for fabrication of field emission device

A three-dimensional complex carbon nanoneedle electron emitter film with high emission current density at low electric field has been developed by a direct current plasma chemical vapor deposition system. Sample grown on stainless wire substrate pretreated with the mixing powders of diamond and molybdenum exhibited novel film morphology. The scanning electron microscopy image taken from this film indicated a three-dimensional complex nanostructure emitter, the center of which was a carbon nanoneedle, and many small carbon nanowalls growing from the needle. The density of unique nanostructure emitters was about 5 × 10⁷/cm². The I–V characteristic addressed an emission current density of 251 mA/cm² at the electric field of 2.2 V/μm, and the field emission current was stable, making it possibly suitable for developing field emission device.     

Long lifetime emission from screen printing carbon nanotubes over 45,000 h at 1.27 mA/cm2 with 10% duty ratio

A long time operation of field electron emission over 45,000 h was achieved using the screen printing carbon nanotube (CNT) emitter fabricated on an ITO coated glass substrate. The measurement was carried out in an ultra-high vacuum chamber at around 3 × 10^− 7 Pa in pressure with continuously applying voltage of rectangular pulses at 743 V or 730 V peak, 60 Hz frequency and 10% duty ratio. The emission current corresponding to the voltage pulse at 1.27 mA/cm² density was repeatedly and reproducibly observed for more than 5 years. Because the operated condition was 10 times higher at the current density than that of the conventionally developed field emission lamps (FELs), the expected lifetime of the presented emitter will be 450,000 h though the vacuum level of the measurement was extremely higher than that of the actual operation of FELs. By investigating the morphology of the emitter after terminating the operation, it was found that sparse bundles of agglomerated CNTs were standing in the long lifetime CNT emitter.     

Growth and electron field emission properties of ultrananocrystalline diamond on silicon nanostructures

The electron field emission (EFE) properties of Si nanostructures (SiNS), such as Si nanorods (SiNR) and Si nanowire (SiNW) bundles were investigated. Additionally, ultrananocrystalline diamond (UNCD) growth on SiNS was carried out to improve the EFE properties of SiNS via forming a combined UNCD/SiNS structure. The EFE properties of SiNS were improved after the deposition of UNCD at specific growth conditions. The EFE performance of SiNR (turn-on field, E₀ = 5.3 V/μm and current density, J_e = 0.53 mA/cm² at an applied field of 15 V/μm) was better than SiNW bundles (turn-on field, E₀ = 10.9 V/μm and current density, J_e < 0.01 mA/cm² at an applied field of 15 V/μm). The improved EFE properties with turn-on field, E₀ = 4.7 V/μm, current density, J_e = 1.1 mA/cm² at an applied field of 15 V/μm was achieved for UNCD coated (UNCD grown for 60 min at 1200 W) SiNR. The EFE property of SiNW bundles was improved to a turn-on field, E₀ = 8.0 V/μm, and current density, J_e = 0.12 mA/cm² at an applied field of 15 V/μm (UNCD grown for 30 min at 1200 W).     

Electron field emission from filtered arc deposited diamond-like carbon films using Au and Ti layers

In this work, tetrahedral diamond-like carbon (DLC) films are deposited on Si, Ti/Si and Au/Si substrates by a new plasma deposition technique — filtered arc deposition (FAD). Their electron field emission characteristics and fluorescent displays of the films are tested using a diode structure. It is shown that the substrate can markedly influence the emission behavior of DLC films. An emission current of 0.1 μA is detected at electric field E_DLC/Si=5.6 V/μm, E_DLC/Au/Si=14.3 V/μm, and E_DLC/Ti/Si=5.2 V/μm, respectively. At 14.3 V/μm, an emission current density J_DLC/Si=15.2 μA/cm², J_DLC/Au/Si=0.4 μA/cm², and J_DLC/Ti/Si=175 μA/cm² is achieved, respectively. It is believed that a thin TiC transition layer exists in the interface between the DLC film and Ti/Si substrate.     

High-performance field emission from a carbon nanotube carpet

We have created a field emitter composed of a carbon nanotube (CNT) yarn, which was prepared by direct spinning through chemical vapor deposition and then formed into a carpet structure by tying the yarn to a conductive substrate before cutting it. The structure of the carpet is arranged to induce the tips of the CNT yarn to protrude toward the anode for maximum electron emission. The turn-on field, threshold field, and field enhancement factor of the device are 0.33, 0.48 V/μm, and 19,141, respectively. Extremely low operating electric fields and a high field enhancement factor result from the high density of CNT emitters with high crystallinity, the electrically good contact between the emitters and the substrate, and the effects of the multistage structure. The emission is stable even at a high current density of 2.13 mA/cm², attributed to the strong adhesion between the emitters and the substrate. The emission performance is found to be customizable by adjusting the structure, for example, the CNT pile density. These results are relevant for practical applications, such as large-area flat-panel displays, large-area low-voltage lamps, and X-ray sources.     

Electron field emission properties on UNCD coated Si-nanowires

The electron field emission (EFE) properties of Si-nanowires (SiNW) were improved by coating a UNCD films on the SiNWs. The SiNWs were synthesized by an electroless metal deposition (EMD) process, whereas the UNCD films were deposited directly on bare SiNW templates using Ar-plasma based microwave plasma enhanced chemical vapor deposition (MPE–CVD) process. The electron field emission properties of thus made nano-emitters increase with MPE–CVD time interval for coating the UNCD films, attaining small turn-on field (E₀ = 6.4 V/μm) and large emission current density (J_e = 6.0 mA/cm² at 12.6 V/μm). This is presumably owing to the higher UNCD granulation density and better UNCD-to-Si electrical contact on SiNWs. The electron field emission behavior of these UNCD nanowires emitters is significantly better than the bare SiNW ((E₀)_SiNWs = 8.6 V/μm and (J_e)_SiNWs < 0.01 mA/cm² at the same applied field) and is comparable to those for carbon nanotubes.     

Improved field emission properties of carbon nanotubes decorated with Ta layer

The field emission (FE) properties of vertically aligned carbon nanotube (CNT) arrays having a surface decorated with Ta layer were investigated. The CNTs with 6 nm thickness of Ta decoration showed improved FE properties with a low turn-on field of 0.64 V/μm at 10 μA/cm², a threshold field of 1.06 V/μm at 1 mA/cm² and a maximum current density of 7.61 mA/cm² at 1.6 V/μm. After Ta decoration, the increased emission centres and/or defect sites on the surface of CNTs improved the field enhancement factor. The work function of CNTs with Ta decoration measured with ultraviolet photoelectron spectroscopy decreased from 4.74 to 4.15 eV with increasing Ta thickness of 0–6 nm. The decreased work function and increased field enhancement factor were responsible for the improved FE properties of the vertically aligned CNTs. Moreover, a significant hysteresis in the cycle-testing of the current density with rising and falling electric field process was observed and attributed to the adsorption/desorption effect, as confirmed by the photoelectron spectrum.     

Field emission devices for advanced electronics comprised of lateral nanodiamond or carbon nanotube emitters

Nanocarbon-derived electron emission devices, specifically, nanodiamond lateral field emission diodes and gated carbon nanotube triodes are new configurations for robust nanoelectronic devices. These novel micro/nanostructures provide an alternative and efficient means of accomplishing electronics that are impervious to temperature and radiation. Nitrogen-incorporated nanocrystalline diamond has been lithographically micropatterned to utilize the material as an electron field emitter. Arrays of laterally arranged “finger-like” nanodiamond emitters constitute the cathode in a versatile diode configuration with small interelectrode separation. Nanodiamond lateral tip conditioning techniques are employed to improve emission and the subsequent device performance discussed. A low diode turn-on voltage of 7 V and a high emission current of 90 μA at an anode voltage of 70 V (electric field of ∼ 7 V/μm) is reported for the nanodiamond lateral device. Also, the development of a field emission triode amplifier based on aligned carbon nanotubes (CNTs) with low turn-on voltage and small gate leakage current, utilizing a dual-mask microfabrication process is reported. The2 × 20 μm CNT triode array displays a gate turn-on voltage of ∼ 44 V, and low gate currents less than 3% of the anode currents. The low gate leakage currents observed confirmed the effectiveness of the convex-shaped gated CNT emitter in alleviating the cathode-gate leakage problem that compromises the operation of a field emission triode.     

High current field emission from individual non-linear resistor ballasted carbon nanotube cluster array

Field emission (FE) electron sources based on carbon nanotubes (CNTs) have the potential to serve as cold cathodes for various vacuum microelectronic and nanoelectronic devices. Emission currents are extremely sensitive to variation in emitter geometry and local surface states, both of which are difficult to synthesize uniformly when fabricating a CNT field emission array (FEA). Such non-uniformities cause unstable emission, limiting the current output. Here, we propose a method for simulating and fabricating a high performance CNT-FEA with emission units that are individually connected to a single crystalline silicon pillar (SP), which acts as an non-linear ballast resistor. Results showed that the driving field for this CNT-FEA was greatly reduced relative to CNT-FEAs on a flat silicon substrate. This improvement was due to the high aspect ratio of the CNT clusters combined with SPs. The FE behavior demonstrated that the emission current was limited by the non-linear resistors (NLRs). Emitted currents density over 1.65 A/cm² at a low extraction field of 5.8 V/μm were produced by a 1 mm² emmiting area. The proposed technology may be used to fabricate cathodes capable of reliable, uniform, and high current emission.     

Arc synthesis of double-walled carbon nanotubes in low pressure air and their superior field emission properties

Double-walled carbon nanotubes (DWCNTs) have been effectively synthesized by direct current (DC) arc discharge in low pressure air using a mixture of Fe catalyst and FeS promoter. Compared with conventional arc methods, this method is easier to implement without using expensive high purity gas sources. A tip structural DWCNT film has been successfully fabricated by a mixing process of electrophoresis, electroplating and electrocorrosion. The field emission properties of tip structural nanotube film are significantly increased compared with DWCNT film fabricated by electrophoresis. The turn-on electric field E_to decreases from 1.25 to 0.92 V/μm, the low threshold electric field E_th decreases from 1.45 to 1.13 V/μm, and the field enhancement factor β increases from about 2210 to 4450. Meanwhile, this tip structural CNT film shows remarkably stable within 2% fluctuations for several hours. The high-performance emitter material and preparation technologies are both easy to scale up to large areas.     

Time dependent growth of ZnO nanoflowers with enhanced field emission properties

Herein, we report the facile growth of ZnO nanoflowers composed of nanorods on silicon substrate by non-catalytic thermal evaporation process. The grown nanoflowers were examined in terms of their morphological, structural, optical and field emission properties. The detailed characterizations revealed that the nanoflowers are grown in high density, possessing well-crystallinity and exhibiting wurtzite hexagonal phase. The Raman-scattering spectrum shows a sharp optical-phonon E₂ mode at 437 cm⁻¹ which confirmed the wurtzite hexagonal phase for the grown nanoflowers. The room-temperature PL spectrum depict a strong ultraviolet emission at 381 nm, revealed good optical properties for the ZnO nanoflowers. The field emission studies revealed that a turn-on field for the ZnO nanoflowers based field emission device was 4.3 V/μm and the emission current density reached to 0.075 mA/cm² at an applied electric field of 7.2 V/μm and exhibit no saturation. The field enhancement factor ‘β’ for the fabricated device was estimated from the F-N plot and found to be ~2.75×10³. Finally, systematic time-dependent experiments were performed to determine the growth process for the formation of ZnO nanoflowers composed of nanorods.     

Improvement of sensitive Ni(OH)2 nonenzymatic glucose sensor based on carbon nanotube/polyimide membrane

An improved nonenzymatic glucose sensor was fabricated of Ni(OH)₂ on carbon nanotube/polyimide (PI/CNT) membrane by a simple electrochemical method. Three different morphologies of Ni(OH)₂ have been formed by changing the conditions used in synthesis process. The formation mechanism for Ni(OH)₂ nanospheres was studied to provide a deep understanding of crystal growth. The electrochemical behaviors of different Ni(OH)₂ nanostructures were investigated by cyclic voltammetry and chronoamperometry in alkaline solution. At an applied potential of +0.60 V, the sensor based on PI/CNT–Ni(OH)₂ nanospheres shows a high sensitivity of 2071.5 μA mM⁻¹ cm⁻² and a detection limit of 0.36 μM (signal/noise = 3). The proposed sensor exhibits high sensitivity, long-term stability and good reproducibility, and performs well for detection of glucose in human blood serums. Therefore, this novel fabrication method for glucose sensor is promising for the future development of nonenzymatic glucose sensors.     

Packing density control of carbon nanotube emitters in an anodic aluminum oxide nano-template on a Si wafer

Carbon nanotubes (CNTs) emitters in the AAO templates on a silicon wafer were fabricated. The packing density of CNTs was changed in the order of 1 × 10⁷ − 7 × 10⁷ tips cm^− 2 depending upon the concentration of hydrogen in the reactant gas mixture. The emission current density was strongly dependent upon the packing density of the CNT emitters. Low turn-on fields of 1.6–2.1 V/μm and field enhancement factor of 1900–4970 were observed.     

Carbon nanotubes growth in AlPO4-5 zeolites: Evidence for density dependent field emission characteristics

We report on the correlation between the concentration of Fe-catalyst, doped in the aluminum phosphate (AlPO₄-5) zeolite and the resulting density of carbon nanotubes (CNTs) to obtain the optimum electron field emission conditions from the CNTs. Initially, AlPO₄-5 crystallites were impregnated, for a period of ∼ 10–60 min, in the Fe-catalyst solution and subjected to Electron Spectroscopy for Chemical Analysis (E.S.C.A.). The analysis revealed that the concentration of Fe-catalyst, C_Fe, was increased from ∼ 1.7% to ∼ 8.6%, respectively, with increase in impregnation time, I_T. The HRTEM results showed that Fe nano-clusters, with diameter ∼ 7–10 nm, were formed in the surface region of the crystallites. These crystallites were sprayed on the conducting substrates, under identical spraying conditions. SEM study revealed that the coverage of the crystallites on the substrates was ∼ 10³–10⁴ crystallites/cm². These substrates were subjected to direct current plasma enhanced chemical vapor deposition (dc-PECVD) process, to grow CNTs. The SEM micrographs were recorded for the CNT-grown substrates and the average areal density of CNTs, (σ_T)_av, on the crystallites (t/cm²) was estimated. The analysis indicated that (σ_T)_av increased from ∼ 6.24 ± 0.19 × 10¹⁰ to 2.04 ± 0.61 × 10¹¹ t/cm² with gradual increase in C_Fe. The field emission study of the samples revealed that the optimum values of the turn-on electric field, ∼ 3.69 V/μm and the field emission current density, ρ_d, ∼ 1.78 × 10³ μA/cm² were achieved for (σ_T)_av, ∼ 6.24 ± 0.19 × 10¹⁰ t/cm², at a concentration of Fe, C_Fe, ∼ 3.0%, encapsulated in the AlPO₄-5 crystallites.     

Field emission characteristics of CNFB-CNT hybrid material grown by one-step MPCVD

A hybrid material consisting of carbon nanotubes (CNTs) and carbon nanoflake balls (CNFBs) was successfully synthesized by microwave-plasma-assisted chemical vapor deposition using a H₂/CH₄/N₂ ratio of 4:1:2 at 80 Torr for 30 min. The precursor used was a sol-gel solution containing ferric nitrate, tetrabutyl titanate, and n-propanol. The carbon hybrid material (CNFB-CNT) exhibited excellent field emission properties, with its turn-on field being 1.77 V/μm. It also showed two field enhancement factors (1536 and 7932) for different electric fields. The emission current density of the hybrid remained higher than 0.65 mA/cm² for more than 50 h and was 0.82 mA/cm² even after 50 h of continuous emission. Further, the field emission properties of the CNFB-CNT hybrid were better than those of other single-structured carbon nanomaterials (CNTs, CNFs, or CNFBs). Therefore, the CNFB-CNT hybrid material should be a promising candidate for use in high-performance field emitters.