Amorphous carbonated apatite formation on diamond-like carbon containing titanium oxide

Thin films of diamond-like carbon (DLC) containing titanium oxide (DLC-TiO_x, x ≤ 2) were synthesized using a pulsed DC metal–organic plasma activated chemical vapor deposition (MOCVD) technique. X-ray photoelectron spectroscopy (XPS) results confirmed the presence of TiO₂ on the surface of the films. The compressive stress, elastic modulus and hardness of the films decreased with increasing Ti content. The water contact angle reduced from 62° for DLC to 45° for DLC-TiO_x films containing 13.3 at.% of Ti. The biomimetic growth of amorphous carbonated apatite on the DLC-TiO_x in simulated body fluid (SBF) was found and dependent on the Ti content of the film. UV light exposure prior to immersion in SBF increased the growth rate of apatite formation significantly as a result of increased hydrophilicity of the surface.     

Microwave dielectric properties of the (BaxSr1−x)TiO3 thin films on alumina substrate

Barium strontium titanate, (Ba_xSr_1?x)TiO₃ (BST) thin films have been prepared on alumina substrate by sol–gel technique. The X-ray patterns analysis indicated that the thin films are perovskite and polycrystalline structure. The interdigital electrode with 140 nm thickness Au/Ti was fabricated on the film with the finger length of 80 μm, width of 10 μm and gaps of 5 μm. The temperature dependence of dielectric constant of the BST thin films in the range from ?50 °C to 50 °C was measured at 1 MHz. The dielectric properties of the BST thin films were measured by HP 8510C vector network analyzer from 50 MHz to 20 GHz.     

Molecular structure of SiOx-incorporated diamond-like carbon films; evidence for phase segregation

Silicon-oxide incorporated amorphous hydrogenated diamond-like carbon films (SiO_x–DLC, 1 ≤ x ≤ 1.5) containing up to 24 at.% of Si (H is excluded from the atomic percentage calculations reported here) were prepared using pulsed direct current plasma-enhanced chemical vapour deposition (DC-PECVD). Molecular structure, optical properties and mechanical properties of these films were assessed as a function of Si concentration. The spectroscopic results indicated two structural regimes. First, for Si contents up to ~ 13 at.%, SiO_x–DLC is formed as a single phase with siloxane, O–Si–C₂, bonding networks. Second, for films with Si concentrations greater than 13 at.%, SiO_x–DLC with siloxane bonding and SiO_x deposit simultaneously as segregated phases. The variations in mechanical properties and optical properties as a function of Si content are consistent with the above changes in the film composition.     

Effects of oxidation cross-linking and sintering additives (TiN,B) on the formation and heat-resistant performance of polymer-derived SiC(Ti,B) films

Effects of oxidation cross-linking and sintering additives (TiN, B) on the microstructure formation and heat-resistant performance of freestanding SiC(Ti, B) films synthesized from Ti, B-containing polycarbosilane (TiB-PCS) precursor were investigated. TiB-PCS green films were first cross-linked for 1 h, 2 h, 3 h and 4 h, respectively, and then pre-sintered at 950 °C. Finally, they were sintered at 1800 °C to complete the conversion from organic films to inorganic SiC(Ti, B) films. The results reveal that curing time has a great impact on the uniformity and density of SiC(Ti, B) films. TiB-PCS films cured for 3 h yield the best quality SiC(Ti, B) films, which are composed of β-SiC crystals, C clusters, α-SiC nano-crystals, a small amount of TiB₂ and B₄C. TiB₂ and B₄C are both steady phases which can inhibit abnormal growth of β-SiC, effectively reduce sintering temperature and help consume excess C from decomposition of amorphous SiOxCy. After high temperature annealing at 1500 °C, 1600 °C and 1700 °C in argon, SiC(Ti, B) films still keep excellent mechanical properties, which makes them attractive candidate materials for microelectromechanical systems (MEMS) used at ultra-high temperatures (exceeding 1500 °C).     

Electron field emission from filtered arc deposited diamond-like carbon films using Au and Ti layers

In this work, tetrahedral diamond-like carbon (DLC) films are deposited on Si, Ti/Si and Au/Si substrates by a new plasma deposition technique — filtered arc deposition (FAD). Their electron field emission characteristics and fluorescent displays of the films are tested using a diode structure. It is shown that the substrate can markedly influence the emission behavior of DLC films. An emission current of 0.1 μA is detected at electric field E_DLC/Si=5.6 V/μm, E_DLC/Au/Si=14.3 V/μm, and E_DLC/Ti/Si=5.2 V/μm, respectively. At 14.3 V/μm, an emission current density J_DLC/Si=15.2 μA/cm², J_DLC/Au/Si=0.4 μA/cm², and J_DLC/Ti/Si=175 μA/cm² is achieved, respectively. It is believed that a thin TiC transition layer exists in the interface between the DLC film and Ti/Si substrate.     

Lead zirconium titanate thin films prepared by thermal annealing of multilayer structures composed of PbO,ZrO2 and TiO2

Lead zirconium titanate [Pb(Zr_xTi_1?x)O₃ or PZT] thin films were prepared by the thermal annealing of multilayer films composed of binary oxide layers of PbO, ZrO₂ and TiO₂. The binary oxides were deposited by metal organic chemical vapor deposition. An interdiffusion reaction for perovskite PZT thin films was initiated at approximately 550 °C and nearly completed at 750 °C for 1 h under O₂ annealing atmosphere. The composition of Pb/Zr/Ti in perovskite PZT could be controlled by the thickness ratio of PbO/ZrO₂/TiO₂ where the contribution of each binary oxide at the same thickness was 1:0.55:0.94. The electrical properties of PZT (Zr/Ti = 40/60, 300 nm) prepared on a Pt-coated substrate included a dielectric constant ?_r of 475, a coercive field E_c of 320 kV/cm, and remnant polarization P_r of 11 μC/cm² at an applied voltage of 18 V.     

Substrate temperature dependent bolometric properties of TiO2−x films for infrared image sensor applications

In this study, we investigated the substrate temperature (T_S) dependent bolometric properties on TiO_2−x films for infrared image sensor applications. The film crystallinity was changed from amorphous to rutile phase with increasing the T_S. The decrement of resistivity with temperature in TiO_2−x test-devices confirms the typical semiconducting property. All the test pattern devices have linear I-V characteristic performance which infers that the ohmic contact was well formed at the interface between the TiO_2−x and the Ti electrode. The resistivity, activation energy (E_a) and the temperature coefficient of resistance (TCR) values of the device samples were decreased up to 200 °C of T_S. The sample deposited at 200 °C had a significantly low 1/f noise parameter and a high universal bolometric parameter (β). However, at the substrate temperature of 250 °C, the E_a, TCR and the 1/f noise values were increased due to increase of the resistivity. The TCR and the 1/f noise values are proportional to the resistivity of TiO_2−x films. As a result, the low resistivity of TiO_2−x sample deposited at 200 °C is a viable bolometric material for uncooled IR image sensors.     

The effects of deposition temperature on structure and dielectric properties of Ba0.6Sr0.4TiO3 thin films produced by pulsed laser deposition

The effects of deposition temperature on orientation, surface morphology and dielectric properties of the thin films for Ba_0.6Sr_0.4TiO₃ thin films deposited on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition were investigated. X-ray diffraction patterns revealed a (2 1 0) preferred orientation for all the films. With rising substrate temperature from 650 °C to 700 °C, the crystallinity and crystal grain size of the films increase, the relative dielectric constant increases, but the dielectric losses have not obvious difference. The film deposited at 350 °C and annealed at 700 °C has strongly improved roughness and dielectric permittivity compared with the film only deposited directly at 700 °C. Three distinct relaxation processes within tan(δ) were found for the Ba_xSr_1?xTiO₃ film: a broadened process of the film relaxation, an intermediate peak which originates from Maxwell–Wagner–Sillars polarization, and an extremely slow process ascribed to leak current. The complex dielectric permittivity and loss can be fitted by an improved Cole–Cole model corresponding to a stretched relaxation function.     

Temperature stability and high-Qf of low temperature firing Mg2SiO4–Li2TiO3 microwave dielectric ceramics

In this work, a series of low-temperature-firing (1−x)Mg₂SiO₄–xLi₂TiO₃–8 wt% LiF (x = 35–85 wt%) microwave dielectric ceramics was prepared through conventional solid state reaction. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses showed that the Li₂TiO₃ phase was transformed into cubic phase LiTiO₂ phase and secondary phase Li₂TiSiO₅. Partial substitution of Mg²⁺ ions for Ti³⁺ ions or Li⁺Ti³⁺ ions increased the cell volume of the LiTiO₂ phase. The dense microstructures were obtained in low Li₂TiO₃ content (x ≤ 65 wt%) samples sintered at 900 °C, whereas the small quantity of pores presented in high Li₂TiO₃ content (x ≥ 75 wt%) samples sintered at 900 °C and low Li₂TiO₃ content (x = 45 wt%) sintered at 850 and 950 °C. Samples at x = 45 wt% under sintering at 900 °C for 4 h showed excellent microwave dielectric properties of ε_r = 10.7, high Q × f = 237,400 GHz and near-zero τ_f = − 3.0 ppm/°C. The ceramic also exhibited excellent chemical compatibility with Ag. Thus, the fabricated material could be a possible candidate for low temperature co-fired ceramic (LTCC) applications.     

Densification and mechanical properties of hot-pressed ZrN ceramics doped with Zr or Ti

The densification of hot-pressed ZrN ceramics doped with Zr or Ti have been investigated at 1500–1700 °C. It is shown that either Zr or Ti additive can facilitate the densification process. ZrN with 20 mol% Zr or Ti (named ZNZ and ZNT) sintered at 1700 °C can achieve above 98% relative densities whereas densification temperature up to 2000 °C is necessary for pure ZrN. The densification improvements are attributed to solid solution of Zr or Ti into ZrN to form non-stoichiometric ZrN_1?x or (Zr, Ti)N_1?x. The microstructures and mechanical properties of ZNZ and ZNT samples have been examined. Large grain size and flat fracture surface existed in ZNT sample sintered at 1700 °C, which lead to poor toughness as low as 2.3 MPa m^1/2. On the contrary, the fracture toughness of ZNZ sample sintered at 1700 °C was up to 5.9 MPa m^1/2, attributed to fine and uniform grain size distribution.     

Low temperature sintering of ZnTiO3/TiO2 based dielectric with controlled temperature coefficient

Structure, microstructure and dielectric properties of ZnTiO₃ and rutile TiO₂ mixtures (ZnTiO₃ + xTiO₂ with x = 0, 0.02, 0.05, 0.1, 0.15 and 0.2) sintered using ZnO–B₂O₃ glass phase (5 wt.% added) as sintering aid have been investigated. For all compounds, the sintering temperature achieves 900 °C. The X-ray diffraction patterns indicate for x = 0.1 that the material is composed by three phases identified as ZnTiO₃ hexagonal, TiO₂ rutile and ZnO. The presence of ZnO is explained by the introduction of Ti into Zn site to form the (Zn_1−xTi_x)TiO_3+x solid solution in resulting the departure of ZnO from the ZnTiO₃ structure. The ZnTiO₃ + 0.15TiO₂ composition sintered at 900 °C with glass addition exhibits attractive dielectrics properties (ɛ_r = 23, tan(δ) < 10⁻³ and a temperature coefficient of the dielectric constant near zero (τ_ɛ = 0 ppm/°C)) at 1 MHz. It is also shown that the introduction of TiO₂ allows to tune the temperature coefficient of the permittivity. All these properties lead this system compatible to manufacture silver based electrodes multilayer dielectrics devices.     

Control of refractive index by annealing to achieve high figure of merit for TiO2/Ag/TiO2 multilayer films

We modified the refractive index (n) of TiO₂ by annealing at various temperatures to obtain a high figure of merit (FOM) for TiO₂/Ag/TiO₂ (45 nm/17 nm/45 nm) multilayer films deposited on glass substrates. Unlike the as-deposited and 300 °C-annealed TiO₂ films, the 600 °C-annealed sample was crystallized in the anatase phase. The as-deposited TiO₂/Ag/as-deposited TiO₂ multilayer film exhibited a transmittance of 94.6% at 550 nm, whereas that of the as-deposited TiO₂/Ag/600 °C-annealed TiO₂ (lower) multilayer film was 96.6%. At 550 nm, n increased from 2.293 to 2.336 with increasing temperature. The carrier concentration, mobility, and sheet resistance varied with increasing annealing temperature. The samples exhibited smooth surfaces with a root-mean-square roughness of 0.37–1.09 nm. The 600 °C-annealed multilayer yielded the highest Haacke's FOM of 193.9×10⁻³ Ω⁻¹.     

Raman spectra and extended X-ray absorption fine structure characterization of La(2−x)/3NaxTiO3 and Nd(2−x)/3LixTiO3 microwave ceramics

A-site deficient perovskite compounds, La_(2?x)/3Na_xTiO₃ (0.02 ≤ x ≤ 0.5) and Nd_(2?x)/3Li_xTiO₃ (0.1 ≤ x ≤ 0.5) microwave ceramics, were investigated by Raman scattering. Nd_(2?x)/3Li_xTiO₃ (0.1 ≤ x ≤ 0.5) was also investigated by extended X-ray absorption fine structure (EXAFS) measurement. The Raman shifts of the E (239 cm^?1) and A₁ (322 cm^?1) modes of La_(2?x)/3Na_xTiO₃ were found to decrease with x. However, the E (254 cm^?1) and A₁ (338 cm^?1) of Nd_(2?x)/3Li_xTiO₃ were found to blueshift with x, which was caused by Li substitution. The redshift of the A₁ (471 cm^?1) phonon of Nd_(2?x)/3Li_xTiO₃ (0.1 ≤ x ≤ 0.3) indicates that O–Ti–O bonding forces lessen with Li concentration, which is consistent with the EXAFS result that Ti–O bond lengths increase for 0.1 ≤ x ≤ 0.3. For x > 0.3, the EXAFS result shows that Ti–O bond lengths decrease. Moreover, Ti–O bond lengths show strong correlation with the microwave dielectric constants of Nd_(2?x)/3Li_xTiO₃.     

Microstructure,ferroelectric and piezoelectric properties of Bi0.5K0.5TiO3-modified BiFeO3–BaTiO3 lead-free ceramics with high Curie temperature

The effects of composition, sintering temperature and dwell time on the microstructure and electrical properties of (0.75 ? x)BiFeO₃–0.25BaTiO₃–xBi_0.5K_0.5TiO₃ + 1 mol% MnO₂ ceramics were studied. The ceramics sintered at 1000 °C for 2 h possess a pure perovskite structure and a morphotropic phase boundary of rhombohedral and pseudocubic phases is formed at x = 0.025. The addition of Bi_0.5K_0.5TiO₃ retards the grain growth and induces two dielectric anomalies at high temperatures (T₁ ～ 450–550 °C and T₂ ～ 700 °C, respectively). After the addition of 2.5 mol% Bi_0.5K_0.5TiO₃, the ferroelectric and piezoelectric properties of the ceramics are improved and very high Curie temperature of 708 °C is obtained. Sintering temperature has an important influence on the microstructure and electrical properties of the ceramics. Critical sintering temperature is 970 °C. For the ceramic with x = 0.025 sintered at/above 970 °C, large grains, good densification, high resistivity and enhanced electrical properties are obtained. The weak dependences of microstructure and electrical properties on dwell time are observed for the ceramic with x = 0.025.     

Bi1/2Na1/2TiO3–BaTiO3 based thick-film capacitors for high-temperature applications

Thick films with compositions (1 − x)(0.94Bi_1/2Na_1/2TiO₃–0.06BaTiO₃)–x(K_0.5Na_0.5NbO₃) (x = 0, 0.03, 0.09 and 0.18) have been prepared and their structural and electrical properties have been investigated. Dielectric properties show that these films are well suited for high-temperature applications due to their low variance in permittivity (<15%) over large temperature ranges. The thick film with x = 0.18 offers an operational temperature range from room temperature to 350 °C. Films with x = 0.03 and 0.09 also possess a stabile permittivity up to 400 °C. The improvement in the thermal stability of the permittivity is attributed to the addition of K_0.5Na_0.5NbO₃ which leads to breaking of the long-range order in the materials. However, the polarizability of the materials was found to decrease possibly due to the clamping effect of the substrate. The characteristics of each film are discussed based on dielectric and electrical properties.     

Microstructural design of BaTiO3-based ceramics for temperature-stable multilayer ceramic capacitors

In order to satisfy EIA X8R specification, a new type of BaTiO₃-based ceramic with hierarchical structure in a formula scheme “a ferroelectric ABO₃ + another ferroelectric ABO₃”, was designed. There were (Ba, Bi)TiO₃ and Ba(Ti, Zr)O₃ phases with different Curie temperatures coexisting in the grains from inside to outside, prepared by wet chemical method under 100 °C. The hierarchical structure of the ceramic grains was proved by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). The dielectric constant of (Ba, Bi)TiO₃–Ba(Ti, Zr)O₃ ceramic was ～6000, the ΔC/C_20 °C was ?12.0%, 14.1%, and ?8.3% at ?55 °C, 130 °C, and 160 °C, respectively, and the dielectric loss is less than 0.1, which is obviously superior to (Ba, Bi)TiO₃ and Ba(Ti, Zr)O₃. The results of this work showed that the formula scheme “a ferroelectric ABO₃ + another ferroelectric ABO₃” for solid solutions is a promising approach to prepare high performance temperature-stable capacitor materials.     

Effect of Zn2+ substitution on the microwave dielectric properties of LiMgPO4 and the development of a new temperature stable glass free LTCC

The LiMg_(1?x)Zn_xPO₄ ceramics have been prepared by the solid state ceramic route. The LiMg_(1?x)Zn_xPO₄ ceramic retains the orthorhombic structure up to x = 0.2. The compositions with 0.3 ≤ x ≤ 0.8 exist as a mixture of orthorhombic and monoclinic phases. When Mg²⁺ is fully replaced with Zn²⁺ (x = 1.0) complete transition to monoclinic phase occurs. The ceramic with x = 0.1 (LiMg_0.9Zn_0.1PO₄) sintered at 925 °C exhibits low relative permittivity (?_r) of 6.7, high quality factor (Q_u × f) of 99,700 GHz with a temperature coefficient of resonant frequency (τ_f) of ?62 ppm/°C. The slightly large τ_f is adjusted nearly to zero with the addition of TiO₂. LiMg_0.9Zn_0.1PO₄–TiO₂ composite with 0.12 volume fraction TiO₂ sintered at 950 °C shows good microwave dielectric properties: ?_r = 10.1, Q_u × f = 52,900 GHz and τ_f = ?5 ppm/°C. The ceramic is found to be chemically compatible with silver.     

Low-temperature continuous wet oxidation of trichloroethylene over CoOx/TiO2 catalysts

TiO₂-supported metal oxides such as CoO_x, CuO_x, NiO_x and FeO_x have been used for catalytic wet oxidation of trichloroethylene (TCE) in a continuous flow type fixed-bed reactor system, and the most promising catalyst for this wet catalysis has been characterized using XPS and XRD techniques. All the supported catalysts gave relatively low conversions for the wet oxidation at 36 °C, except for 5 wt% CoO_x/TiO₂ which exhibited a steady-state conversion of 45% via a transient activity behavior up to 1 h on stream. XPS measurements yielded that a Co 2p_3/2 main peak at 779.8 eV appeared with the 5 wt% CoO_x/TiO₂ catalyst after the continuous wet TCE oxidation at 36 °C for ca. 6 h (spent catalyst) and this binding energy value was equal to that of Co₃O₄ among reference Co compounds used here, while the catalyst calcined at 570 °C (fresh catalyst) possessed a main peak at 781.3 eV, very similar to that for CoTiO_x species such as CoTiO₃ and Co₂TiO₄. Only characteristic reflections for Co₃O₄ were indicated upon XRD measurements even with the fresh catalyst sample. The simplest model, based on these XPS and XRD results, for nanosized Co₃O₄ particles existing with the fresh catalyst could reasonably explain the transient activity behavior observed upon the wet TCE oxidation.     

Synthesis and characterization of Ba1−xSrxTiO3 nanopowders by citric acid gel method

Stoichiometric and monophasic Ba_1−xSr_xTiO₃ (x = 0.3) nanopowders were successfully prepared by the citric acid gel method using barium nitrate, strontium nitrate and tetra-n-butyl titanate as Ba, Sr, Ti sources and citric acid as complexing reagent. Thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), infrared (IR) spectroscopy, X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to characterize the thermal decomposition behavior, the crystallization process and the particle size and morphology of the calcined powders. The results indicated that single-phase and well-crystallized Ba_1−xSr_xTiO₃ (x = 0.3) nanopowders with particle size around 80 nm could be obtained after calcining the dried gel at 950 °C for 2 h.     

Mixture behavior and microwave dielectric properties of (1 − x)Ca2P2O7–xTiO2

(1 − x)β-Ca₂P₂O₇–xTiO₂ were prepared by solid-state reaction. The mixture behavior and microwave dielectric properties were investigated using X-ray powder diffraction and a network analyzer, respectively. X-ray powder diffraction patterns showed that β-Ca₂P₂O₇ and TiO₂ existed in a mixture form, which was also confirmed by SEM analysis. It was shown that TiO₂, which has positive temperature coefficient of the resonant frequency (τ_f), compensated the negative τ_f of β-Ca₂P₂O₇ (−53 ppm/°C) through mixture formation. The variation of dielectric properties with a function of TiO₂ contents could be explained using mixture rule. In the 0.3 < x < 0.4 regions, τ_f value could be successfully reduced almost zero. In particular, at x = 0.3, good microwave dielectric properties was obtained: Q × f = 44,000, ɛ_r = 10.9, and τ_f = −11 ppm/°C.