Maximum hole concentration for Hydrogen-terminated diamond surfaces with various surface orientations obtained by exposure to highly concentrated NO2

NO₂ exposure drastically increases the hole concentration on the surface of hydrogen (H)-terminated diamond. When the NO₂ gas concentration is higher than 300 ppm, the saturated hole sheet concentration p_s stays the same. Therefore, the p_s value is regarded as the high limit of the concentration of holes on H-terminated diamond surface, p_s,max. In this work, we compared p_s,max, mobility μ, and sheet resistance R_s for (100), (110), and (111) H-terminated surfaces of chemical-vapor-deposited single-crystal diamond. On (110), (111), (100) surfaces, the p_s,max values are 1.717 × 10¹⁴ and 1.512 × 10¹⁴ cm^− 2, and 0.981 × 10¹⁴, respectively. This result supports the first-principle calculations: the hole concentration depends on the energy difference between the valence band maximum and the unoccupied orbitals of adsorbent NO₂ molecules. We have achieved R_s of 719.3 Ω/sq (p_s = 1.456 × 10¹⁴ cm^− 2 and μ = 59.6 cm² V^− 1 s^− 1), the lowest reported so far, on (111) surfaces under 20,000-ppm NO₂ atmosphere.     

Nucleation and growth surface conductivity of H-terminated diamond films prepared by DC arc jet CVD

High-quality polycrystalline diamond film has been extremely attractive to many researchers, since the maximum transition frequency (f_T) and the maximum frequency of oscillation (f_max) of polycrystalline diamond electronic devices are comparable to those of single crystalline diamond devices. Besides large deposition area, DC arc jet CVD diamond films with high deposition rate and high quality are one choice for electronic device industrialization. Four inch free-standing diamond films were obtained by DC arc jet CVD using gas recycling mode with deposition rate of 14 μm/h. After treatment in hydrogen plasma under the same conditions for both the nucleation and growth sides, the conductivity difference between them was analyzed and clarified by characterizing the grain size, surface profile, crystalline quality and impurity content. The roughness of growth surface with the grain size about 400 nm increased from 0.869 nm to 8.406 nm after hydrogen plasma etching. As for the nucleation surface, the grain size was about 100 nm and the roughness increased from 0.31 nm to 3.739 nm. The XPS results showed that H-termination had been formed and energy band bent upwards. The nucleation and growth surfaces displayed the same magnitude of square resistance (R_s). The mobility and the sheet carrier concentration of the nucleation surface were 0.898 cm/V s and 10¹³/cm² order of magnitude, respectively; while for growth surface, they were 20.2 cm/V s and 9.97 × 10¹¹/cm², respectively. The small grain size and much non-diamond carbon at grain boundary resulted in lower carrier mobility on the nucleation surface. The high concentration of impurity nitrogen may explain the low sheet carrier concentration on the growth surface. The maximum drain current density and the maximum transconductance (g_m) for MESFET with gate length L_G of 2 μm on H-terminated diamond growth surface was 22.5 mA/mm and 4 mS/mm, respectively. The device performance can be further improved by using diamond films with larger grains and optimizing device fabrication techniques.     

Diamond surface conductivity after exposure to molecular hydrogen

We report experimental evidence of a substantial reduction of the sheet resistance of a commercially available (110) oriented natural diamond surface after exposure not to atomic but to molecular hydrogen. In a conventional CVD reactor, we have merely exposed the sample to high purity molecular hydrogen fluxes at 800 °C. After exposure to air, the surface conductivity increased several orders of magnitude as measured by a professional collinear four-point probe head with tungsten carbide tips. After annealing at 900 °C in vacuum (P < 10^− 5 Pa) the conductivity dropped at least 4 orders of magnitude; repeatability tests on the measurements of the surface conductivity after thermal hydrogenation and subsequent air exposure were conducted in order to avoid systematic errors. Similar experiments were conducted at different process temperatures in order to evaluate the best process conditions. Thermal hydrogenation appears to be ineffective at increasing the surface conductivity of (100) homoepitaxial CVD diamonds.     

Homoepitaxial diamond film with an atomically flat surface over a large area

Homoepitaxial diamond films with atomically flat surface were grown using the microwave plasma chemical vapor deposition method at a low CH₄ concentration of less than 0.05% in a CH₄ and H₂ mixed gas system. In Ib (001) diamond substrates having misorientation angles of 0.5°, atomic force microscope image on the surface of film grown at 0.025% CH₄ concentration showed that the films had atomically flat surface with mean roughness of 0.04 nm in area as large as 4×4 mm² (the whole region of the substrate).     

Growth of atomically step-free surface on diamond {111} mesas

Diamond homoepitaxy by microwave plasma-enhanced chemical vapor deposition was investigated on {111} substrate. Growth at a low CH₄/H₂ ratio of 0.025% in a gas phase results in the formation of an atomically step-free surface over 10 × 10-µm² mesas of diamond {111} substrate, when there are no screw dislocations in the mesas. This was achieved through ideal lateral growth, in which two-dimensional terrace nucleation was completely suppressed. The application of the selective formation of the step-free surface and the lateral growth of diamond films will open the way for the realization of high-quality electronic devices using diamond.     

Quality of diamond wafers grown by microwave plasma CVD: effects of gas flow rate

We found a strong impact of gas flow rate on diamond growth process in a 5 kW microwave plasma chemical vapour deposition reactor operated on CH₄-H₂ gas mixtures. Diamond films of 0.1–1.2 mm thickness and 2.25 in. in diameter were produced at H₂ flow rates varied systematically from 60 sccm to 1000 sccm at 2.5% CH₄. The highest growth rate, 5 μm h⁻¹, was observed at intermediate F values (≈300 sccm). Carbon conversion coefficient (the number of C atoms going from gas to diamond) increases monotonically up to 57% with flow rate decrease, however, this is accompanied with a degradation of diamond quality revealed from Raman spectra, thermal properties and surface morphology. High flow rates were necessary to produce uniform films with thermal conductivity >18 W cm⁻¹ K⁻¹. Diamond disks with very low optical absorption (loss tangent tgδ<10⁻⁵) in millimetre wave range (170 GHz) have been grown at optimized deposition conditions for use as windows for high-power gyrotrons.     

Direct formation of graphene layers on diamond by high-temperature annealing with a Cu catalyst

The formation of high-quality graphene layers on diamond was achieved based on a high-temperature annealing method using a Cu catalyst. Typical features of monolayer graphene were observed in the Raman spectra of layers formed by annealing of Cu/diamond heterostructures at 950 °C for 90 min. The coverage ratio of these graphene layers on diamond was estimated to be on the order of 85% by Raman mapping of the 2D peak. The sheet hole concentration and mobility values of the layers were estimated to be ~ 10¹³ cm^− 2 and ~ 670 cm²/Vs, respectively. These values are comparable to those previously observed for high-quality graphene layers on SiC.     

High temperature thermal conductivity of free-standing diamond films prepared by DC arc plasma jet CVD

Free-standing diamond films with 1.68 mm in polished thickness have been prepared by DC arc plasma jet CVD. By means of simply changing the placing orientation of diamond films along the laser transmission direction while testing, the through-thickness thermal conductivity (κ_⊥) together with the in-plane (κ_//) thermal conductivity of free-standing diamond films were measured by laser flash technique over a wide temperature range. Results show that the thermal conductivity κ_⊥ and κ_// of free-standing diamond films are up to 1916 and 1739 Wm^− 1 K^− 1 at room temperature, respectively, showing small anisotropy (9%), and following the relationship κ ~ T^− n as temperature rises. The conductivity exhibits similar value compared to that of high-quality single crystal diamond above 500 K for both through-thickness and in-plane directions of CVD diamond films. The effects of impurities and grain boundaries on thermal conductivity of diamond films with increasing temperature were discussed.     

Diamond based field-effect transistors with SiNx and ZrO2 double dielectric layers

A diamond-based field-effect transistor (FET) with SiN_x and ZrO₂ double dielectric layer has been demonstrated. The SiN_x and ZrO₂ gate dielectric are deposited by plasma-enhanced chemical vapor deposition (PECVD) and radio frequency (RF) sputter methods, respectively. SiN_x layer is found to have the ability to preserve the conduction channel at the surface of hydrogen-terminated diamond film. The leakage current density (J) of SiN_x/ZrO₂ diamond metal-insulator-semiconductor FET (MISFET) keeps lower than 3.88 × 10^− 5 A·cm^− 2 when the gate bias was changed from 2 V to − 8 V. The double dielectric layer FET operates in a p-type depletion mode, whose maximum drain-source current, threshold voltage, maximum transconductance, effective mobility and sheet hole density are determined to be − 28.5 mA·mm^− 1, 2.2 V, 4.53 mS·mm^− 1, 38.9 cm²·V^− 1·s^− 1, and 2.14 × 10¹³ cm^− 2, respectively.     

Piezoresistivity of n-type conductive ultrananocrystalline diamond

Recent developments of a piezoresistive sensor prototype based on n-type conductive ultrananocrystalline diamond (UNCD) are presented. Samples were deposited using hot filament chemical vapor deposition (HFCVD) technique, with a gas mixture of H₂, CH₄ and NH₃, and were structured using multiple photolithographic and etching processes. Under controlled deposition parameters, UNCD thin films with n-type electrical conductivity at room temperature (5 × 10^− 3 – 5 × 10¹ S/cm) could be grown. Respective piezoresistive response of such films was analyzed and the gauge factor was evaluated in both transverse and longitudinal arrangements, also as a function of temperature from 25 °C up to 300 °C. Moreover, the gauge factor of piezoresistors with various sheet resistance values and test structure geometries was evaluated. The highest measured gauge factor was 9.54 ± 0.32 at room temperature for a longitudinally arranged piezoresistor with a sheet resistance of about 30 kΩ/square. This gauge factor is well comparable to that of p-type boron doped diamond; however, with a much better temperature independency at elevated temperatures compared to the boron-doped diamond and silicon. To our best knowledge, this is the first report on piezoresistive characteristics of n-type UNCD films.     

Homoepitaxial single crystal diamond growth at different gas pressures and MPACVD reactor configurations

Homoepitaxial growth of single crystal diamond by microwave plasma chemical vapor deposition in a 2.45 GHz reactor was investigated at high microwave power density varied from 80 W/cm³ to 200 W/cm³. Two methods of achieving high microwave power densities were used (1) working at relatively high gas pressures without local increase of electric field and (2) using local increase of electric field by changing the reactor geometry (substrate holder configuration) at moderate gas pressures. The CVD diamond layers with thickness of 100–300µm were deposited in H₂–CH₄ gas mixture varying methane concentration, gas pressure and substrate temperature. The (100) HPHT single crystal diamond seeds 2.5 × 2.5 × 0.3 mm (type Ib) were used as substrates. The high microwave power density conditions allowed the achievement of the growth rate of high quality single crystal diamond up to 20 µm/h. Differences in single crystal diamond growth at the same microwave power density 200 W/cm³ for two process conditions—gas pressure 210 Torr (flat holder) and 145 Torr (trapezoid holder)—were studied. For understanding of growth process measurements of the gas temperature and the concentration of atomic hydrogen in plasma were made.     

Chemical reaction of hydrogenated diamond surface with amino acids by using N-chlorosuccinimide

Various organic compounds can be immobilized on a diamond surface if a chemically active organic functional group, such as an NH₂ group, is introduced on the diamond surface. We therefore attempted to introduce an NH₂ group on a diamond surface by using chemical reaction of a hydrogenated diamond surface with an amino acid and NCS (N-chlorosuccinimide). From our previous experimental results (Diamond Relat. Mater., 15, 668 (2006)), we expected that a functional group could be introduced on the diamond surface. However, there was no peak assigned to the NH₂ group in the IR spectra for diamond powder treated with amino acids. The diamond powder treated with L-serine, L(?)-threonine, L(?)-phenylalanine, L(+)-arginine, L-histidine, or L-asparagine monohydrate had a specific peak at 2275 cm^? 1 in the IR spectra. Moreover, the diamond powder treated with L(?)-threonine had the highest intensity of the peak at 2275 cm^? 1. Therefore, the chemical reaction of a hydrogenated diamond surface with L(?)-threonine was further examined in detail. Unfortunately, the assignment of the peak at 2275 cm^? 1 was unclear. However, we speculate from the compounds in the chemical reaction process that the peak is assigned to the CN group, although the peak position is slightly different from that of the normal CN group.     

Electrical properties of ultrananocrystalline diamond/amorphous carbon nanocomposite films

The electrical surface properties of ultrananocrystalline diamond/amorphous carbon composite films have been investigated by four-point probe I/V and Hall measurements, whereas impedance spectroscopy has been used to establish the electrical bulk properties of the films. It turned out that the surface is p-type conductive with a resistivity of 0.14 Ω cm and a sheet carrier concentration of 7.6 × 10¹³ cm^?2. The bulk resistivity is higher by almost seven orders of magnitude (1.3 × 10⁶ Ω cm). The bulk conduction is thermally activated with an apparent activation energy of 0.17 eV. From Cole–Cole plots of the impedance spectra it can be concluded that there are three different contributions to the bulk conductivity. In order to try to identify these three components contributing to the electrical bulk conduction, Raman spectra have been recorded at five different wavelengths from the IR to UV region. These measurements showed that the UNCD/a-C films consist of at least three components: diamond nanocrystallites, an amorphous carbon matrix, and trans-polyacetylene-like structures probably at the interface between these two.     

Electronic surface barrier properties of boron-doped diamond oxidized by plasma treatment

The electronic surface barrier characteristics of single-crystal and nanocrystalline boron-doped diamond in electrolytes are evaluated. Two cases are compared: Oxidation by RF oxygen plasma treatment and oxidation by anodic polarization in alkaline electrolyte. It is shown that the plasma treatment reduces the surface barrier to about 1.0 eV compared to 1.7 eV when subjected to anodic oxidation. For single-crystalline diamond, the oxygen evolution reaction in 0.1 M H₂SO₄ electrolyte is almost insensitive to the oxidation method while the plasma-treated nanocrystalline diamond electrode shows an enhanced activity of grain boundary defects at anodic potentials. X-ray photoemission spectroscopy measurements reveal that the plasma oxidation induces a higher content of carbonyl surface groups than anodic oxidation as well as a small amount of non-sp³ contents.     

Growth of diamond films with high surface smoothness

Diamond films with highly smooth backside surface have been deposited by positively biasing the substrate during diamond growth in a hot-filament chemical vapor deposition (HFCVD) system. By bonding the diamond film on the glass and wet etching to remove silicon, the highly smooth diamond surface can be exposed and used directly for the fabrication of diamond devices.Silicon substrate was first treated by diamond powder of 625 nm in an ultrasonic bath. By positively biasing the substrate, electron bombardment during diamond growth increases the nucleation density from 10⁸ ∼ 10⁹ cm^− 2 to 4 × 10¹¹ cm^− 2. The surface smoothness on the backside of diamond film has thus been improved significantly, inducing root-mean-square roughness of 5 nm. Owing to the extremely high surface smoothness and the high crystalline quality on the backside of diamond film and the high diamond growth rate, the backside surface of the diamond film grown under electron bombardment is particularly suitable for device fabrication.     

Ambipolar chemical sensors based on the self-assembled film of an amphiphilic (phthalocyaninato) (porphyrinato) europium complex

An amphiphilic mixed (phthalocyaninato) (porphyrinato) europium triple-decker complex Eu₂(Pc)₂(TPyP) has been synthesized and characterized. Introducing electron-withdrawing pyridyl substituents onto the meso-position of porphyrin ring in the triple-decker to ensure the sufficient hydrophilicity and suitable HOMO and LUMO energy levels and thus successfully realize amphiphilic ambipolar organic semiconductor. Importantly, high sensitive, reproducible p-type and n-type responses towards NH₃ and NO₂ respectively, based on the self-assembled film of the Eu₂(Pc)₂(TPyP) fabricated by a simple solution-based Quasi–Langmuir–Shäfer (QLS) method, have been first revealed. The good conductivity and crystallinity for the QLS film of Eu₂(Pc)₂(TPyP) render it excellent sensing property for both electron-donating gas NH₃ in 5–30 ppm range and electron-accepting gas NO₂ in 400–900 ppb range due to the optimized molecular packing in the uniform-sized nanoparticles depending on the effective intermolecular interaction between the triple-decker molecules, among the best results of phthalocyanine-based chemical sensors for room-temperature detection of NH₃ and NO₂, respectively. Furthermore, the responses of the QLS film are all linearly correlated to both NH₃ and NO₂ with excellent sensitivity of 0.04% ppm^− 1 and 31.9% ppm^− 1, respectively, indicating the great potential of semiconducting tetrapyrrole rare earth triple-decker compounds in the field of chemical sensors.     

High resolution electron energy loss spectroscopy of hydrogenated polycrystalline diamond: Assignment of peaks through modifications induced by isotopic exchange

In this work we unambiguously determine the origin of the different peaks which appear in the High Resolution Electron Energy Loss Spectrum (HREELS) of hydrogenated polycrystalline diamond films for an incident electron energy of 5 eV and loss energies extending to 700 meV. High quality diamond films deposited by hot filament chemical vapor deposition from various isotopic gas mixtures: ¹²CH₄ + H₂, ¹²CD₄ + D₂, ¹²CH₄ + D₂, ¹²CD₄ + D₂, ¹³CH₄ + H₂ were characterized. The different vibrational modes, fundamentals and overtones, were directly identified through the modifications of the HREEL spectra induced by the isotopic exchange of H by D and ¹²C by ¹³C Three types of peaks were identified: (1) pure C–C related peaks (a diamond optical phonon at ∼ 155 meV and its overtones at 300, 450 and 600 meV), (2) pure C–H related peaks (C–H bend at ∼ 150 meV and C–H stretch of sp³ carbon at 360 meV), (3) coupling of C–H and C–C peaks (510 meV peak due to coupling of the C–H stretch at 360 meV with either the C–C stretch or the C–H bend at ∼ 155 meV). The overtones at 300, 450 and 600 meV (associated with electron scattering at diamond optical phonons) indicate a well defined hydrogenated diamond surface since they are absent in the HREEL spectrum of low energy ion beam damaged diamond surface.     

Effects of plasma treatments on the nitrogen incorporated nanocrystalline diamond films

The nitrogen incorporated nanocrystalline diamond (NCD) films were grown on n-silicon (100) substrates by microwave plasma enhanced chemical vapor deposition (MPECVD) using CH₄/Ar/N₂ gas chemistry. The effect of surface passivation on the properties of NCD films was investigated by hydrogen and nitrogen-plasma treatments. The crystallinity of the NCD films reduced due to the damage induced by the plasma treatments. From the crystallographic data, it was observed that the intensity of (111) peak of the diamond lattice reduced after the films were exposed to the nitrogen plasma. From Raman spectra, it was observed that the relative intensity of the features associated with the transpolyacetylene (TPA) states decreased after hydrogen-plasma treatment, while such change was not observed after nitrogen-plasma treatment. The hydrogen-plasma treatment has reduced the sp²/sp³ ratio due to preferential etching of the graphitic carbon, while this ratio remained same in both as-grown and nitrogen-plasma treated films. The electrical contacts of the as-grown films changed from ohmic to near Schottky after the plasma treatment. The electrical conductivity reduced from ~ 84 ohm^– 1 cm^− 1 (as-grown) to ~ 10 ohm^– 1 cm^− 1 after hydrogen-plasma treatment, while the change in the conductivity was insignificant after nitrogen-plasma treatment.     

A carbonaceous chemical filter for the selective detection of NO2 in the environment

In order to achieve the selective detection of NO₂ in the environment, a chemical filter is added to a semiconductor gas sensor that is very sensitive to oxidizing gases in the gas flow. The aim is to remove ozone (O₃), the main interfering oxidizing gas for NO₂ detection before its measurement by a phthalocyanine sensor. The first parameter for the carbon material as a filter is the specific surface area (SSA), which should be high enough to ensure interaction with O₃ and low enough to avoid interaction with NO₂. The key role of surface oxygenated groups and dangling bonds was underlined by NEXAFS and EPR, respectively. A mixture of nanocones/nanodiscs (20/70% w/w) with SSA of 30 m² g⁻¹ with both structural and electronic defects is found to be the most efficient filter and was used upstream of a phthalocyanine sensor. The lifetime of the chemical filter was investigated and a strategy to increase it is described. Raman spectroscopy, EPR and NEXAFS allow the reactivity of the carbon with NO₂ and O₃ in the 10–1000 ppb concentration range to be studied.     

Effect of total reaction pressure on electrical properties of boron doped homoepitaxial (100) diamond films formed by microwave plasma-assisted chemical vapor deposition using trimethylboron

Boron was doped into diamond films which were synthesized homoepitaxially on polished (100) diamond substrates by means of microwave plasma-assisted chemical vapor deposition (MPCVD) using trimethylboron as the dopant at a constant substrate temperature of 1073 K. The morphologies and electrical properties of the synthesized diamond films were dependent on the total reaction pressure. A maximum Hall mobility, 760 cm² V⁻¹ s⁻¹, was obtained for the film synthesized at 10.7 kPa. The values of Hall mobility were comparable with those obtained for B₂H₆-doped films at corresponding hole concentrations.